Simulation Program with Integrated Circuit Emphasismdker/courses/DIC2005/SPICE.pdf · –Simulation Program with Integrated Circuit Emphasis – Developed by University of California

1Nanoelectronics and Gigascale Systems Laboratory, NCTU

SPICESimulation Program with Integrated Circuit Emphasis

Sep. 25, 2004

References: [1] CIC SPICE training manual[3] SPICE manual[2] DIC textbook


Introduction

• SPICE: – Simulation Program with Integrated Circuit Emphasis– Developed by University of California at Berkeley

• A CAD tools to simulate circuits in steady-state, transient, and frequency domains.

• SBTSPICE, HSPICE, TSPICE, PSIPCE


HSPICE Simulation Flow

Reference: CIC SPICE training manual


MOS SPICE Model• LEVEL 1:

– Based on square law– Long-Channel devices

• LEVEL 2:– Velocity saturation– Mobility degradation – Drain-induced barrier lowering (DIBL)

• LEVEL 3:– Semi-empirical model


MOS SPICE Model (cont.)• BSIM3V3:

– Berkeley Short-Channel IGFET Model– LEVEL 49– Over 200 parameters to model the 2nd-order

effect


Netlist Structure

Depend on spice model

Circuit structure


Instance and Element NamesCDE, F, G, HIJKLMQRO, T, UVX

CapacitorDiodeDependent Current and Voltage control sourceCurrent SourceJFET or MESFETMutual InductorInductorMOSFETBJTResistorTransmission LineVoltage SourceSubcircuit Call

Scale Factors

f 1e-15 k 1e3

p 1e-12 meg 1e6

n 1e-9 g 1e9

u 1e-6 T 1e12

m 1e-3


Device DescriptionR1 A B 1k

C1 C D 1p

M1 D G S B nch l=1u w=3u+AD=3p PD=5u AS=3p PS=5u+ NRS=1 NRD=1


Subcircuit Description and Recall

• Description (Ex: a inverter).subckt inv in outmp1 out in vdd vdd pch l=1u w=3umn1 out in 0 0 nch l=1u w=1u.ends inv

• Recallx1 a b invx2 c d inv


DC Analysis TypeDC sweep & DC small signal anysis

.dc sweep for power supply, temp., param…..

.op specify time (s) at which operating point is to be calculated.

.tf calculate DC small-signal transfer function.

.pz performs pole/zero analysis

Example:.dc vin 0 5 0.25


AC Analysis TypeAC sweep & small signal analysis.ac calculate frequency-domain response.noise noise analysis

Example:.ac dec 10 1k 100meg sweep Rl dec 2 5k 15k


Transient Analysis Type

.tran calculate time-domain response

.four fourier analysis

.fft fast fourier transform

Example:. tran 1n 100n


Voltage and Current Source

• PulseVin in 0 pulse (0V 5V 10ns 10ns 10ns 40ns 100ns)

• SinusoidalVin in 0 sin (0V 1V 100Meg 2ns 5e7)

• Piecewise Linear SourceVin in 0 pwl (60n 0V, 120n 0V, 130n 5V, 170n 5V +180n 0V, R 0)


Input control Statements.data

.tran 1 n 100n sweep data=D1

.data D1 width Length VDD Cap

10u 100u 2V 5p

50u 600u 10V 10p

50u 600u 10V 10p

…..

.enddata

.alter

.del lib “XXX.lib” TT

.lib “XXX.lib” FF

.alter

.temp -50 0 50

Rl 1 2 1k

.param Wval=100u

.end


Output Format.option list produces an element summary listing of

the data to be printed.

.option node prints a node connection table.

.option acct reports job accounting and run-time statistics at the end of output listing.

.option opts prints the current settings of all control options.

.option nomod suppress the printout of model parameters.


Output Statement.print print numeric analysis results.probe allows save output variables only into

the graph data files.meas print numeric results of measured

specificationsExample:.print Vdb(vout) V(node) par(‘V(out)/V(in)’).meas tran tprop trig V(in) val=2.5 rise=1 targ V(out) val=2.5 fall=1

xxx.ms# xxx.ma# xxx.mt#


Simulation step


AvanWaves (1)


AvanWaves (2)


AvanWaves (3)


AvanWaves (4)


AvanWaves (5)


AvanWaves (6)


Output buffer (inverter)

Supply voltage 2.5 V

Output load 10 pF

Operation frequency 500 MHz

Rise time and fall time < 0.2 nsec

Used the 1.2 µm CMOS process

Design Example

Vin Vout

VDD

CL


Design Example (cont.)

72

02

0

1.75 10

0.74

656 sec1 2 sec

500

2.2 0.1 0.1 sec2

0.04545 sec

OX

th

f

on L

FC cmV V

cmV

T nMHz

Tt n

R C n

µ

τ

τ

−= ×

=

= −

= =

= = × =

= =

NMOS

34.54454

412.6

2320.5556

27851.2

onDsat

Dsat

nmos

nmos

VDDRI

I mAWLWL

µµ

= ≈

=

⎛ ⎞ =⎜ ⎟⎝ ⎠

⎛ ⎞ =⎜ ⎟⎝ ⎠



***** IO *****

.MODEL NMOS NMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=0.74 KP=8.0E-05+ NSUB=5.37E+15 GAMMA=0.54 PHI=0.6 U0=656 UEXP=0.157 UCRIT=31444+ DELTA=2.34 VMAX=55261 XJ=0.25U LAMBDA=0.037 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=1.0 RSH=70.00 PB=0.58+ CGDO=3.4E-10 CGSO=4.3E-10 CJ=0.0003 MJ=0.66 CJSW=8.0E-10 MJSW=0.24

.MODEL PMOS PMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=-0.74 KP=2.70E-05+ NSUB=4.33E+15 GAMMA=0.58 PHI=0.6 U0=262 UEXP=0.324 UCRIT=65720+ DELTA=1.79 VMAX=25694 XJ=0.25U LAMBDA=0.061 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=-1.0 RSH=121 PB=0.64+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0005 MJ=0.51 CJSW=1.35E-10 MJSW=0.24


Design Example (cont.).temp 25M0 Vout Vin VDD VDD pmos w=94u L=1.2u m=90M1 Vout Vin 0 0 nmos W=94u L=1.2u m=30Cl vout 0 10pF

VDD VDD 0 2.5VVin Vin 0 pulse(0 2.5 1n 0.1n 0.1n 0.9n 2n)

.op

.option post

.tran 1n 30n

.probe V(vout)

.meas tran tr trig V(vout) val=0.25 rise=2 targ V(vout) val=2.25 rise=2.meas tran tf trig V(vout) val=2.25 fall=2 targ V(vout) val=0.25 fall=2.meas tran rms_power RMS power.end



Clock feedthrough

Documents

Simulation Program with Integrated Circuit Emphasismdker/courses/DIC2005/SPICE.pdf · –Simulation Program with Integrated Circuit Emphasis – Developed by University of California