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Solid StateElectrical Conductivity & Reactivity
Edward A. Mottel
Department of Chemistry
Rose-Hulman Institute of Technology
Solid State Electrical Conductivity
Solid ionic compounds are poor electrical conductors.
Mobile charges (ions or electrons) are needed for electrical conductivity.
The difference in energy of bonding and antibonding orbitals in a solid can explain many electrical properties.
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BondingBand Theory
directionallocalized bonds
Si 4 Si atoms
Si
Si
SiSi
Si
silicon(diamond structure)
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BondingBand Theory
band gap
valence band
conduction band
for siliconthe valence band is full
the conduction band is emptydirectional
localized bonds
Si 4 Si atoms
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Band Gap
carbon(diamond)
silicon germanium tin
Smaller gap for heavier elements
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Band Gap
Smaller gap for heavier elements
C
Si
Ge
Sn
diamond - insulator
semimetal, semiconductor
grey tin - metallic, conductor
graphite has a differentstructure than diamond
and is a conductor
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BondingCovalent and Metallic Bonding
directionallocalized bonds
C 4 C atoms
no band gap
valence band
conduction band
Insulator Metallic Conductor
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Density of States
valence band
conduction band
Insulator MetalSemiconductor
overlapping mo’s inextended structure
levels arenot uniformly spaced
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Conductivity
metal
semiconductorinsulator
T
e-
Band Gap
T2 > T1
average
Energy
num
ber
of
ele
ctro
ns
free electrons or holes move charge
higher temperature puts more e- in conduction band
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Conductivity
metal
semiconductorinsulator
T
e-
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Elements in Semiconductors
N
P
As
Sb
O
S
Se
Te
B
Al
Ga
In
C
Si
Ge
Sn
Zn
Cd
Alloys: GaP, GaAs, ZnS, CdS, CdSe, SiC
Intrinsic: Si, Ge, Fe3O4
Cu
Ag
F
Cl
Br
I
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Doped Semiconductors
valence band
conduction band
n-typesemiconductor
1% As in Ge
excess mobileelectrons
p-typesemiconductor1% Ga in Ge
excess mobileholes
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Diodea combination of an
n-type semiconductorand a
p-type semiconductorthat allows current flowin a preferred direction
n-type p-type
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Diodee- flow can occurwith e- moving to
more stableenergy levels
- +
Both conductbecause there are
mobile electrons or holesand locations to move to.
n-type p-type
e- e- Battery provides e- on one side and
drain on the other side.
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Diode
-+
n-type p-type
e- e-
Current flow in thereverse direction requires e- move to higher energy levels,
and occurs only withlarge applied potentials(breakdown voltage).
The semiconductors arecharge neutral,
and additional chargewill build up in the valence band
preventing significantcurrent flow.
Diode
Curr
en
t
Reverse Bias Forward Bias Applied Voltage
Light Emitting Diodes
= Eh =
c
h = 6.62 x 10-34 J·s·molecule-1
c = 3.00 x 108 m·s-1
band gap
wavelength(color)
Solid State Photoreactions
Ag+ Br- Ag+ Br- Ag+ Br-
Br- Ag+ Br- Ag+ Br- Ag+
Ag+ Br- Ag+ Br- Ag+ Br-
Br- Ag+ Br- Ag+ Br- Ag+
Ag+ Br- Ag+ Br- Ag+ Br-
Br- Ag+ Br- Ag+ Br- Ag+
h
Solid State Photoreactions
Ag+ Br- Ag+ Br- Ag+ Br-
Br- Ag+ Br- Ag+ Br- Ag+
Ag+ Br- Ag+ Br Ag Br-
Br- Ag+ Br- Ag+ Br- Ag+
Ag+ Br- Ag+ Br- Ag+ Br-
Br- Ag+ Br- Ag+ Br- Ag+
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AgBr(s) Ag(s) + ½ Br2(l)
Ag(s) + Br2(l)
Ag(l)
Ag(g)
½ Br2(g)
AgBr(s)
Ag+(g)Br-(g)
325 kJ·mol-1
100 kJ·mol-1
major energy requirement is reverse of EA of Br-
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AgBr(s) Ag(s) + ½ Br2(l)
E = 325,000 J·mol-1
= Eh =
c
= hcE
= 3.68 x 10-7 m = 3680 Å
h = 6.62 x 10-34 J·s·molecule-1
c = 3.00 x 108 m·s-1
mol = 6.02 x 1023 molecules
(near uv)
1-2-3 SuperconductorYBa2Cu3O7
barium
yttrium
copper
oxygen
Resistivityresistivity
temperatureresistivity
temperature
metal superconductor
Tc
Superconductivity
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Heavier Members of a Familytend to form single bonds
C OO
carbon dioxide Si
O O
Si
O
Si
O
OSi
O
O
Si
O
O
silicon dioxidequartz, glass, sand
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Si
Si
SiSi
Si
silicon