SOPHIAS for the X-ray Free-Electron Laser Experiments

1

Takaki Hatsui

on behalf of SOPHIAS collab.

RIKEN

FEE2016June 2, 2016

T. Hatsui, RIKEN

Collaborators

FEE2016 2

RIKEN, JASRIAll members of SACLA members, especially, T. Kudo, K. Ozaki, M. Omodani, S. Ono, N. Teranishi, T. Tosue, K.

Kobayashi, T. Kameshima, Y. Kirihara Univ. of Hyogo

Takeo Watanabe, Hiroo Kinoshita SOIPIX collaboration

esp. Yasuo Arai (KEK), Ikuo Kurachi (KEK), Jiro Ida (Kanazawa Inst. of Technology), Takeshi Tsuru (Kyoto Univ.) , Kazuhiko Hara (Unv. of Tsukuba)

Private Sector Lapis Semiconductor, A-R-Tec Corp., Brookman Technology, Kyocera

Corp.

SACLA Detector Advisory Committee Peter Denes (chair, LBNL), Andrew Holland (The Open Univ.),

Grzegorz Deputch (Fermilab), Yasuo Arai (KEK), Bernd Schmitt (PSI)

June 2, 2016

T. Hatsui, RIKEN

SACLA (SPring-8 Angstrom Compact Free Electron Laser)Coherent femto-second X-ray Laser

3

• Operation for users from March 20127000 hours/year

T. Ishikawa et.al., Nature Photonics(2012)• Currently operating at 30 Hz. • Now moving to operate at 60 Hz this year.

SPring-8 (8 GeV SR)

SACLA (8 GeV XFEL)

injector

Experimental Hall

FEE2016June 2, 2016

T. Hatsui, RIKEN

XFEL Sources for X-ray Diffraction

FEE2016 4June 2, 2016

Peter Schmüser, Martin Dohlus, Jörg Rossbach, Christopher Behrens“Free-Electron Lasers in the Ultraviolet and X-Ray Regime Physical Principles, Experimental Results, Technical Realization” Springer Tracts in Modern Physics, Vol. 258 (2014) 2nd Eds.

> 8 order

T. Hatsui, RIKEN

Outline

5

Motivation: Why Higher Peak Signal X-ray Diffraction X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary Demonstration at SACLA Charge Division

Principle Implementation

Pixel-by-Pixel Calibration Single-Photon Detection X-ray Dose hardness Future possibilities

Summary

FEE2016June 2, 2016

T. Hatsui, RIKEN

X-ray Matter Interaction

6

• AbsorptionA= - log (I/Io)

Wide Dynamic RangeImager

• Compton ScatteringVector MeasurementPhoton Energy Measurement

• X-ray FluorescenceIF ∝ A

Energy Resolving Detector

Incident X-rays

Diffraction Limited Storage Ring (DLSR) Workshop12 March 2016

This talk

• Elastic ScatteringIes∝ q-4 (uniform material)Ies∝ Eph

-2

Wide Dynamic Range Imager

T. Hatsui, RIKEN

XFEL Sources for X-ray Diffraction

FEE2016 7June 2, 2016

～4Ph

oto

n E

ner

gy (

keV

)

8

20

Frequency

30 60 120 3k (5M burst) 1M

SACLA2012- LCLS

since 2009-

Schematic illustration

Wavelength that offer atomistic information

T. Hatsui, RIKEN

XFEL Sources for X-ray Diffraction

FEE2016 8June 2, 2016

～4Ph

oto

n E

ner

gy (

keV

)

8

20

Eu-XFEL

Frequency

30 60 120 3k (5M burst) 1M

SACLA

LCLSSACLA

Schematic illustration

Wavelength that offer atomistic information

T. Hatsui, RIKEN

XFEL Sources for X-ray Diffraction

FEE2016 9June 2, 2016

～4Ph

oto

n E

ner

gy (

keV

)

8

20

Eu-XFEL

Frequency

30 60 120 3k (5M burst) 1M

SACLA

LCLS

PAL/PSI

LCLS-II

LCLS-II

Schematic illustration

Cover wider photon energy

To higher photon energy

Source development

“Diffraction limited” SR

ESRF Upgrade Phase II,

APS upgrade,SPring-8-II,

PETRA upgrade..

500M

T. Hatsui, RIKEN

Requirements and Technology Options

FEE2016 10June 2, 2016

～4Ph

oto

n E

ner

gy (

keV

)

8

20

Schematic illustration

10 krad

Silicon

Stacked Silicon

High-Z

> 100 Mradfor incident

photon

100 Mrad

At Circuit

Multi-port CCD

SOPHIAS

In any case, diffraction experiments demands high-peak signal pixel, because Ies∝ q-4 (uniform material)Ies∝ Eph

-2

This work provides a new scheme to implement high-peak-signal density pixel.

T. Hatsui, RIKEN

Outline

11

Motivation: Why Higher Peak Signal X-ray Diffraction X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary Demonstration at SACLA Charge Division

Principle Implementation

Pixel-by-Pixel Calibration Single-Photon Detection X-ray Dose hardness

Summary

FEE2016June 2, 2016

T. Hatsui, RIKEN

SOPHIAS: Sensor Performance

FEE2016 12

Parameters Value

Process 5M 0.2 um FD-SOI

with 500 um FZ(n-type)

Photodiode P+ in n with laser annealing

on the back side.

Pixel Size 30 µm

Pixel Number 1.9 M

Format 891 x 2157

Effective

Readout Noise

Typ. 140 e-rms with a droplet

algorithm

Peak Signal1 11400 phs.@6 keV

Frame Rate 60 Hz

Thickness 500 μm

Rad. Hardness 10 MGy @ 7 keV

Bad Pixels Typ. 140 ( < 0.001%)

1) Max. signal satisfying analog raw linearity of 3 %

June 2, 2016

Imaging Area: 64.77 x 26.73 mm

Largest Sensor as monolithic active pixel

sensor (MAPS) for radiation detection.

1) T. Hatsui, et.al, Proc. of Int. Image Sensor

Workshop, 2013 Art. 3.05.

2) M. Okihara, et.al., Proc. IEEE NSS, 2012 p. 471.

T. Hatsui, RIKEN

SOPHIAS: Dual-sensor Camera

FEE2016 13June 2, 2016

Parameters Value

On-sensor

power

dissipation

pixel

0.5 μW/pixel

0.95 W/sensor

Column Amp. 3.4 W/sensor

Others 0.35 W/sensor

Total 4.7 W/sensor

Camera

Sensors 2

Pixel Number 3.8 M

Format 1782 x 2157Pixel-by-pixel

calibration On-the-fly

Data Rate 7.4 Gbps

T. Hatsui, RIKEN

Sensor Floor plan

FEE2016 14June 2, 2016

65.60 mm

30.5

8mm

Pixel size :30um×30um

64.77 mm

719pix=21.57mm

891p

ix=2

6.73

mm

Sensitive area Sensitive area Sensitive area

30um:A column without

circuitry30um0.

55m

m2.

7mm

Power supply & GND PADs

Signal PADs

Peripheral circuits

Outer ring (200V)

Inner ring (0V)

HV PAD(200V)

GND PAD (0V)

0.41mm 0.41mm

Stitched by 5 regions (2 mask regions within a mask set)

Output: High-gain port 12

Low-gain port 12

Total 24 (each port consists of a quasi-differential output pair)

T. Hatsui, RIKEN

X-ray Image

Lapis Meeting 15

X-ray Tube Cu Target 22kV 400uA5000 frames accumulated (total exposure: 500 s)

Sensor-detector: 2m

2016/6/2

Low contract image is successfully taken.

Enlarge view gives an example of cosmetic defects.

Its effect to the image quality Is minimized by a PID temperature control.

T. Hatsui, RIKEN

Higher Peak Signal: SOPHIAS

FEE2016 16

T. Kudo et.al., in preparation

Beam Stop

Attenuator

CoO: dia. 22 nm; t=1mm

Sensor is operated at the 60 Hz frame/second mode

SACLA BL3 6keV (1.5×1011phtons/pls)

June 2, 2016

T. Hatsui, RIKEN

X-ray Diffraction with Synchrotron Radiation

Lapis Meeting 172016/6/2

at BL01B1, Nov. 26, 2015

T. Kudo, T. Hatsui, T. Uruga (JASRI） et.al.,

Fe3O4 powder @ 10 keV

(hkl)=(311)

Sample to detector distance 95mm

Beam Intensity 3*109 photons/sec(@10keV30 fps 25ms exposure 9000 shot accumulation with

threshold analysis for each frame.

800

700

600

500

400

300

200

100

0

2100200019001800170016001500140013001200110010009008007006005004003002001000

Linear

800

700

600

500

400

300

200

100

0

2100200019001800170016001500140013001200110010009008007006005004003002001000

10-4

10-3

10-2

10-1

100

Inte

nsity (

ph

oto

n/f

ram

e/p

ixe

l)

Log

T. Hatsui, RIKEN

Peak Signal vs. Pixel Area

FEE2016 18

• Peak Signal, 𝑵𝒑𝒉,𝒎𝒂𝒙

𝑁𝑝ℎ,𝑚𝑎𝑥 =𝑄𝑚𝑎𝑥

(𝐸𝑝ℎ𝑜𝑡𝑜𝑛/𝑊)

𝑄𝑚𝑎𝑥 = 𝐶 𝑉𝑚𝑎𝑥= 𝑆 (𝐶𝑑𝑒𝑛𝑠𝑖𝑡𝑦 𝑉𝑚𝑎𝑥)

F.o.M.Pixel Size

Detectors for European XFELs (LPD, AGPID, DSSC, PixFEL),

spectroscopic imagers (pnCCD, MPCCD phase III-L) are

not targeting high peak signal density.

June 2, 2016

Higher Peak

Signal Density FASPAX 13.3 phs/μm2●

PixFEL 1.38 phs/μm2●

T. Hatsui, RIKEN

Outline

19

Motivation: Why Higher Peak Signal X-ray Diffraction X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary: 12 phs/μm @ 6 keV X-ray Demonstration at SACLA Charge Division

Principle Implementation

Pixel-by-Pixel Calibration Single-Photon Detection X-ray Dose hardness Future possibilities

Summary

FEE2016June 2, 2016

T. Hatsui, RIKEN

Principle

FEE2016 20June 2, 2016

Photon ChargeCharge

ReductionVoltage

Digital Number

Q = 𝐶 𝑉C ∝ Pixel Area

Higher Peak Signal

demands larger pixel

Approach in this work

Reduce the charge/photon ratio

SOPHIAS: 10 % of charge is collected for low gain channel→ x10 improvement in Peak Signal

T. Hatsui, RIKEN

Implementation: Charge Collection

FEE2016 21June 2, 2016

30 um pixel

Low Gain Channel

High Gain Channel

Collecting 10 % of charge

EntranceWindow

X-ray

Absorption Point

Trace of Charge

Silicon

Patterned Implant

Oxide

CMOS Circuitry0.25 μW/pixel without power pulsing

T. Hatsui, RIKEN

Implementation: Charge Dynamics

FEE2016 22June 2, 2016

30 um pixel

0

EntranceWindow

X-ray

Absorption Point

Trace of Charge

Silicon

Patterned Implant

Oxide

CMOS Circuitry

T. Hatsui, RIKEN

Implementation: Charge Division

June 2, 2016

T. Hatsui, M. Nagase, N. Teranishi et.al., in preparation

FEE2016 23

EntranceWindow

X-ray

Absorption Point

Trace of Charge

Silicon

Patterned Implant

Oxide

CMOS Circuitry

T. Hatsui, RIKEN

EntranceWindow

X-ray

Absorption Point

Trace of Charge

Silicon

Patterned Implant

Oxide

CMOS Circuitry

Implementation: Charge Division

June 2, 2016

T. Hatsui, M. Nagase, N. Teranishi et.al., in preparation

FEE2016 24

0 3010

8

6

4

2

0

Y (μm)

Dep

th D

irec

tio

n(μ

m)

H L H L H

Contour map of the internal Potential

• Charge Division occurs nearby Charge Collection Node

Less than 2 μm (<< sensor thickness of 500 μm)• Dependence of charge division ratio to the X-ray

absorption depth is negligible.

T. Hatsui, RIKEN

Outline

25

Motivation: Why Higher Peak Signal X-ray Diffraction X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary: 12 phs/μm @ 6 keV X-ray Demonstration at SACLA Charge Division

Principle: Division occurs nearby the charge collection implants (< 2 μm)

Implementation Pixel-by-Pixel Calibration Single-Photon Detection X-ray Dose hardness Future possibilities

Summary

FEE2016June 2, 2016

T. Hatsui, RIKEN

A calibration method for SOPHIAS was established

Intensity varied through controlling the exposure timeof X-ray source (Cu Kα, 8 keV)

Pixel-by-pixel calibration on the fly is now implemented at 60 frame/s (7.4 Gbps)

Pixel-by-Pixel Calibration

Lapis Meeting 26

Low gain has a knee behavior.

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 500 1000 1500 2000 2500

Sign

al [M

e/p

ix]

Sign

al[V

]

Photon/pix

H gain (left axis)

L gain (left axis)

H-L linked (right axis)

2016/6/2

0

1

Sign

al (

V)

Input Signal (ph)

Cal

ibra

ted

Sig

nal

(M

e-)

Low gain

high gain

Calibrated

T. Hatsui, RIKEN

Charge Division Ratio R

FEE2016 27June 2, 2016

30 um pixel

Low Gain Channel

High Gain Channel

R is dependent on ΔV = VH – VL

From device simulation, linearity was confirmed.R = Const.1 + Const.2 * ΔV

This gives slight change in effective charge division, but keeps linearity.

T. Hatsui, RIKEN

High-Low Coupling

FEE2016 28June 2, 2016

H1H4

H5

H6

H7

H9H8

H2 H3

L1L4 L6

L5 L7

L9L8

L2 L3

Low

High

High-gain Input nodeTrs for Low-gaincircuit

Trs for high-gain circuit

Top View: Schematic

Top View: Layout

Cross Sectional View

～50 nm

～200 nmBOX

T. Hatsui, RIKEN

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 500 1000 1500 2000 2500

Sign

al [M

e/p

ix]

Sign

al[V

]

Photon/pix

H gain (left axis)

L gain (left axis)

H-L linked (right axis)

Sign

al (

V)

Input Signal (ph)

Cal

ibra

ted

Sig

nal

(M

e-)

Low gain

high gain

Calibrated

High-Low Cross Coupling (cont’d)

FEE2016 29June 2, 2016

High Gain

Low Gain

• Input node of High gain acts as back-gate of Low gain.

• The back-gate affects differently in two signal ranges.

1) VH < Vdd, VH = Vbg

2) High-Gain Signal > Vdd , VH = Vdd

1 2

T. Hatsui, RIKEN

High-Low Coupling (cont’d)

FEE2016 30June 2, 2016

High Gain

Low Gain

1) 𝑉𝑖𝑛,ℎ< Vdd, VH = Vbg

2) 𝑉𝑖𝑛,ℎ ≥ Vdd , 𝑉𝑖𝑛,ℎ = Vdd

In a simple calc. taking into account of input transistors of the two SFs.

High gain

∆𝑉𝑖𝑛,ℎ=𝑄ℎ

𝐶𝑠,ℎ

∆𝑉𝑜𝑢𝑡,ℎ= ∆𝑉𝑖𝑛,ℎ ∙ 𝐺𝑆𝐹

Low Gain

∆𝑉𝑖𝑛,𝑙=𝑄𝑙

𝐶𝑠,𝑙

∆𝑉𝑜𝑢𝑡= ∆𝑉𝑖𝑛,ℎ ∙ 𝐺𝑆𝐹 + ∆𝑉𝑡For the range 1)

Δ𝑉𝑡 ∝ ∆𝑉𝑖𝑛,ℎ= 𝑉𝑖𝑛,ℎ − 𝑉𝑟𝑠𝑡(linear to input signal)

for the range 2)Δ𝑉𝑡 = 𝑉𝑑𝑑 − 𝑉𝑟𝑠𝑡

(constant)

This conclusion was confirmed by spice simulations with back-gate effect parameter extracted from transistor measurements.

This gives slight change in effective gain of the SFs, but keeps linearity in the two ranges.

T. Hatsui, RIKEN

Outline

31

Motivation: Why Higher Peak Signal X-ray Diffraction X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary: 12 phs/μm @ 6 keV X-ray Demonstration at SACLA Charge Division

Principle: Division occurs nearby the charge collection implants (< 2 μm)

Implementation Pixel-by-Pixel Calibration

Charge division deviation, high-low coupling still maintain linearity.

Single-Photon Detection X-ray Dose hardness Future possibilities

SummaryFEE2016June 2, 2016

T. Hatsui, RIKEN

SOPHIAS: Single Photon Detection

RIKEN Confidential 322016/6/2

0.0E+00

1.0E+05

2.0E+05

3.0E+05

4.0E+05

5.0E+05

6.0E+05

-10 10 30 50

Fre

qu

en

cy

Signal [DN]

No binning

2x2 binning

0.0E+00

2.0E+05

4.0E+05

6.0E+05

8.0E+05

1.0E+06

1.2E+06

1.4E+06

1.6E+06

-10 -5 0 5 10 15 20

Fre

qu

en

cy

Signal [mV]

No binning

2x2 binning

12 keV

7 keV

1

2 3

Single photon detection possible.On-the fly calc. was implemented.Algorithm optimization is now underway.

Raw Data Notepre-sampled PSF: 20 μm FWHM preliminary: Modified droplet algorithm

1

2 3

Effective Readout Noise of 140 e-rms

T. Hatsui, RIKEN

X-ray Radiation Hardness: Sensor Level

Lapis Meeting 332016/6/2

0.02Gy 0.2Gy

2Gy 20Gy 200Gy

2kGy

16kGy

1kGy

2kGy

3kGY

4kGy

5kGY

BL29XU Beamline @ SPring-8

Target Performance: 1 Grad(Si) @ 7 keV input doseResults: Operational up to 10 Grad(Si)

(equivalent to 250 krad(Si) @Transistor layer)At 1 Grad(Si) (end of life), dynamic range is reduced by

2.5 % （20 mV)

Equivalent Dose (kGy) at Transistor

Sign

al V

olt

age

(mV

)

Reset Image

Signal Image

CDS Image100 MGy(Si)

Consistent with results obtained by a wafer-level

high-throughput evaluation on the transistors1-3.

1) T. Kudo et.al., IEEE TNS (2014) Vol. 61(3), p. 1444.2) I. Kurachi, et.al., IEEE Trans. Electr. Dev. (2015), Vol. 62(8), p. 23713) I. Kurachi, et.al., IEEE Trans. Electr. Dev. (2016), Vol. 63(6), p. 2293.

T. Hatsui, RIKEN

Future possibilities

Lapis Meeting 346/2/2016

This fiscal year

• We finally produce a set of SOPHIAS chips for foreseen needs.

• SOPHIAS is now proving that the SOIPIX process is not only a toy, but a real workhorse.

Promising Facts

• Expression of continuous support from Lapis.

• Yield is now improved to around 50% (preliminary).

• VDD-GND short is the bottleneck.

• This will be improved further by process optimization and now under investigations.

• Yield can be improved in a next project as we can now conduct yield aware design.

• A potentially better process to reduce cosmetic defects is under investigation.

T. Hatsui, RIKEN

Future possibilities (cont’d)

Lapis Meeting 356/2/2016

Introduction of Rad. Hard transistor

• All the results presented here are obtained with the original transistors for commercial use.

• Rad. Hard transistors with improved LDD dose condition is now available2-3

• now used for low noise version of SOPHIAS (SOPHIAS-L)

• drawback is expected a negligible increase of power and cap.

• A test wafer with very Rad. Hard transistors with reduced performance is produced and looks promising for certain applications incl. X-ray Imaging.

2) I. Kurachi, et.al., IEEE Trans. Electr. Dev. (2015), Vol. 62(8), p. 23713) I. Kurachi, et.al., IEEE Trans. Electr. Dev. (2016), Vol. 63(6), p. 2293.

T. Hatsui, RIKEN

Summary

36

Motivation: Why Higher Peak Signal X-ray Diffraction/X-ray Source Developments

SOPHIAS (Silicon-On-Insulator Photon Imaging Array Sensor) Sensor Performance Summary: 12 phs/μm @ 6 keV X-ray Demonstration at SACLA Charge Division

Principle: Division occurs nearby the charge collection implants (< 2 μm)

Implementation Pixel-by-Pixel Calibration

Charge division deviation, high-low coupling still maintain linearity.

Single-Photon Detection X-ray Dose hardness Future possibilities: SOPHIAS is now proving that the SOIPIX

process is a real workhorse.FEE2016June 2, 2016

Thank you for your attention.