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CORRECTIONS Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures** By Sean Wong,* Oliver Kiowski, Manfred Kappes, Jo¨rg K. N. Lindner, Nirajan Mandal, Frank C. Peiris, Geoffrey A. Ozin, Michael Thiel, Markus Braun, Martin Wegener, and Georg von Freymann* Advanced Materials 2008, 20, 4097–4102. DOI: 10.1002/adma.200801508 The following errors appear in the above article: The inset of Figure 3 was missing. The correct representation of Figure 3 is shown here: Figure 3. SEM image of the step-ladder structure with one of the supporting walls removed via FIB milling. The position of the Er-doped layer is highlighted with a red line as a guide to the eye. The bars are systematically shifted vertically in 200nm steps relative to the doping layer, starting from the substrate (top left side of the SEM image). High-magnification SEM imaging of the Er/As2S3 layer (inset) shows that it has a thickness of 139nm (this value takes into account a sample stage tilt of 548). Several characters in Figure 4 were incorrectly displayed. The correct representation of Figure 4 is shown below: Figure 4. a) A schematic of the step-ladder structure (center), and the results of the spatially resolved confocal PL imaging technique in the 1D line-scan mode (bottom) and 2D imaging mode (inset). b) A representative cross-section SEM image of the bars (left) that were examined to construct a model (centre) used to show the progression of the Er doping layer in the bars situated between at the positions between 5 and 65 mm of the step-ladder structure (right). c) SEM images of bars positioned above the erbium doping layer (highlighted in red). Part of the highlighting is removed to show actual Er/As2S3 layer (indicated with a red-arrow).

Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures

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CORRECTIONS

Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures**

By Sean Wong,* Oliver Kiowski, Manfred Kappes, Jorg K. N. Lindner, Nirajan Mandal, Frank C. Peiris, Geoffrey A. Ozin,

Michael Thiel, Markus Braun, Martin Wegener, and Georg von Freymann*

Advanced Materials 2008, 20, 4097–4102.

DOI: 10.1002/adma.200801508

The following errors appear in the above article:

The inset of Figure 3 was missing. The correct representation of Figure 3 is shown here:

Figure 3. SEM image of the step-ladder structure with one of the supporting walls removed via FIB milling.

The position of the Er-doped layer is highlighted with a red line as a guide to the eye. The bars are systematically

shifted vertically in 200nm steps relative to the doping layer, starting from the substrate (top left side of the SEM image).

High-magnification SEM imaging of the Er/As2S3 layer (inset) shows that it has a thickness of 139nm

(this value takes into account a sample stage tilt of 548).

Several characters in Figure 4 were incorrectly displayed. The correct representation of Figure 4 is shown below:

Figure 4. a) A schematic of the step-ladder structure (center), and the results of the spatially resolved confocal PL

imaging technique in the 1D line-scan mode (bottom) and 2D imaging mode (inset). b) A representative cross-section

SEM image of the bars (left) that were examined to construct a model (centre) used to show the progression of the Er

doping layer in the bars situated between at the positions between 5 and 65 mm of the step-ladder structure (right).

c) SEM images of bars positioned above the erbium doping layer (highlighted in red). Part of the highlighting is removed

to show actual Er/As2S3 layer (indicated with a red-arrow).