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SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2

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Page 1: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 2: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 3: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 4: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 5: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 6: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 7: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 8: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 9: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 10: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 11: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 12: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 13: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 14: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 15: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 16: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2
Page 17: SPring-8産業利用推進室support.spring8.or.jp/Doc_workshop/iuss/2012/sp8_indu/4...2012/10/04  · SD = 14.8±0.6 meV -80 100 200 300 400 500 MD -treated i02 N 80 0.6 0.5 0.3 0.2

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