Status of Hamamatsu Silicon Sensors

K. Hara (Univ of Tsukuba)

Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full depletion voltage bias resistance (sampling)　 Status of Institute tests implant tests Coupling capacitors 24-hr leakage current stability

SCT@Prague, June 2001

Delivery Date NumberIV Visual Strip DepletionIstabilityCcouplingRseriesRpoly Cis REJECTS

27.3.200017 2 17 2 0 2 0 0 0 0 020.4.200030 2 30 2 0 2 1 0 0 0 02.7.2000101 8 101 8 0 8 0 0 0 0 0

31.8.2000108 8 108 8 0 8 0 0 0 0 027.9.200088 3 88 2 1 2 0 0 0 0 0

31.10.2000167 4 167 4 2 4 1 0 0 0 3(visual)11.30.2000246 13 246 11 2 11 1 0 0 0 026.12.200057 25 57 23 2 23 4 0 0 0 0

27.3.2001100 0 100 0 0 0 0 0 0 0 026.4.2001153 0 153 0 0 0 3 0 0 0 031.5.200126 0 26 0 0 0 0 0 0 0 0

Totals: 1093 65 1093 60 7 60 10 0 0 0 0

Colour codes: Testing completed Testing in progress

Summary of Institution tests (status)

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Date

cummulative

delivery/month

new mask

Delivery

~100/month so farProduction sensors with modified mask from MarchWe aim at ~300/month.

1093

Leakage current (@150, 350V)

defects

all defects

pinhole is responsible…

wafer thickness

full depletion voltage50~90V

mean=289umspec:285±15

recentdelivery

November 2000

December 2000

HPK I-V curves

IV curves

Detectors with new mask

Bias resistance, sampling 2/lot

Implant tests: sampling (2/lot)

detector defects HPK defects (identified) new defectspinhole open short

287 5 1 (1) 3 (0) 2 (2) 2 measured after826 6 5 (5) 1 (1) 0 intensive IV tests886 6 7 (6) 0

1204 3 9 (3) 0 short?1205 2 7 (2) 01224 4 5 (4) 01250 5 5 (5) 02206 4 4 (4) 02372 8 9 (8) 02426 4 4 (4) 0

Coupling capacitors

Measure nly detectors with many defects …

HPK 1204

0.0E+00

5.0E-11

1.0E-10

1.5E-10

2.0E-10

2.5E-10

3.0E-10

3.5E-10

1 101 201 301 401 501 601 701

Strip Number

Coupling C (F)

738/739/740

pinholes:174/184/186/208/209/224/738/739/740

24hr I stability

Semi-auto prober