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February 2017 DocID026148 Rev 2 1/15
This is information on a product in full production. www.st.com
STGFW20V60DF
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Datasheet - production data
Figure 1: Internal schematic diagram
Features Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead free package
Applications Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Order code Marking Package Packing
STGFW20V60DF G20V60DF TO-3PF Tube
12
3
TO-3PF
C (2)
G (1)
E (3)Sc12850_no_tab
Contents STGFW20V60DF
2/15 DocID026148 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics curves ........................................................ 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1 TO-3PF package information .......................................................... 12
5 Revision history ............................................................................ 14
STGFW20V60DF Electrical ratings
DocID026148 Rev 2 3/15
1 Electrical ratings Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 600 V
IC Continuous collector current at TC = 25 °C 40 A
Continuous collector current at TC = 100 °C 20 A
ICP(1) Pulsed collector current 80 A
VGE Gate-emitter voltage ±20 V
IF Continuous forward current at TC = 25 °C 40 A
Continuous forward current at TC = 100 °C 20 A
IFP(1) Pulsed forward current 80 A
VISO Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s, TC = 25 °C) 3.5 kV
PTOT Total dissipation at TC = 25 °C 52 W
TSTG Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
Notes:
(1)Pulse width is limited by maximum junction temperature.
Table 3: Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 2.9 °C/W
RthJC Thermal resistance junction-case diode 3.4 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW20V60DF
4/15 DocID026148 Rev 2
2 Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES Collector-emitter breakdown
voltage VGE = 0 V, IC = 2 mA 600
V
VCE(sat) Collector-emitter saturation
voltage
VGE = 15 V, IC = 20 A
1.8 2.2
V
VGE = 15 V, IC = 20 A,
TJ = 125 °C 2.15
VGE = 15 V, IC = 20 A,
TJ = 175 °C 2.3
VF Forward on-voltage
IF = 20 A
1.7 2.2
V IF = 20 A, TJ = 125 °C
1.55
IF = 20 A, TJ = 175 °C
1.3
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 600 V
25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V
250 µA
Table 5: Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance VCE= 25 V, f = 1 MHz,
VGE = 0 V
- 2800 - pF
Coes Output capacitance - 110 - pF
Cres Reverse transfer capacitance - 64 - pF
Qg Total gate charge VCC = 480 V, IC = 20 A, VGE = 0 to 15 V (see Figure 28: " Gate charge test circuit")
- 116 - nC
Qge Gate-emitter charge - 24 - nC
Qgc Gate-collector charge - 50 - nC
STGFW20V60DF Electrical characteristics
DocID026148 Rev 2 5/15
Table 6: IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V
(see Figure 27: " Test circuit
for inductive load switching" )
- 38 - ns
tr Current rise time - 10 - ns
(di/dt)on Turn-on current slope - 1556 - A/µs
td(off) Turn-off-delay time - 149 - ns
tf Current fall time - 15 - ns
Eon(1) Turn-on switching energy - 200 - µJ
Eoff(2) Turn-off switching energy - 130 - µJ
Ets Total switching energy - 330 - µJ
td(on) Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V, TJ = 175 °C
(see Figure 27: " Test circuit
for inductive load switching" )
- 37 - ns
tr Current rise time - 12 - ns
(di/dt)on Turn-on current slope - 1340 - A/µs
td(off) Turn-off-delay time - 150 - ns
tf Current fall time - 23 - ns
Eon(1) Turn-on switching energy - 430 - µJ
Eoff(2) Turn-off switching energy - 210 - µJ
Ets Total switching energy - 640 - µJ
Notes:
(1)Including the reverse recovery of the diode. (2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 27: " Test circuit
for inductive load switching")
- 40
ns
Qrr Reverse recovery charge - 320
nC
Irrm Reverse recovery current - 16
A
dIrr/dt Peak rate of fall of reverse
recovery current during tb - 910
A/µs
Err Reverse recovery energy - 115
µJ
trr Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 27: " Test circuit
for inductive load switching")
- 72
ns
Qrr Reverse recovery charge - 930
nC
Irrm Reverse recovery current - 26
A
dIrr/dt Peak rate of fall of reverse
recovery current during tb - 530
A/µs
Err Reverse recovery energy - 307
µJ
Electrical characteristics STGFW20V60DF
6/15 DocID026148 Rev 2
2.1 Electrical characteristics curves
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
20
30
40
50
50 75 100 125 150 175
Ptot (W)
TC (°C)0 250
10
AM17175v2 AM17174v2
0
5
10
15
20
0 25 50 75 100 125 150 175
IC (A)
TC(°C)
VGE =15 V, T J= 175 °C
AM17171v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
0 1 2 3 4
Ic (A)
VCE (V)
VGE=7 V
AM17172v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
0 1 2 3 4
Ic (A)
VCE (V)
VGE=7 V
AM17176v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
VCE(sat)
(V)
TJ(ºC)
IC 40A
IC = 20A
IC = 10A
VGE =15V
AM17177v1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0 10 20 30 40 50 60 70 80
VCE(sat)
(V)
IC (A)
TJ= 25°C
TJ=-40°C
TJ= 175°C
VGE=15V
STGFW20V60DF Electrical characteristics
DocID026148 Rev 2 7/15
Figure 8: Transfer characteristics
Figure 9: Diode VF vs. forward current
Figure 10: Normalized VGE(th) vs. junction temperature
Figure 11: Normalized V(BR)CES vs. junction temperature
Figure 12: Capacitance variations
Figure 13: Gate charge vs. gate-emitter voltage
AM17173v1
TJ=175°C
10
20
30
40
50
60
70
7 8 9 10 11
IC(A)
VGE(V)
-40°C25°C
VCE = 10 V
AM17178v1
0.8
1.2
1.6
2
2.4
10 15 20 25 30 35
VF(V)
IF (A)
T =175 °C
25°C
-40°C
J
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50 0 50 100 150
VGE(th)norm
TJ(ºC)
VCE = VGE
IC = 1mA
AM17180v1
0.9
1.0
1.1
-50 0 50 100 150
V(BR)ces
norm
TJ(ºC)
IC= 2 mA
AM17183v1
10
100
1000
0.1 1 10
C (pF)
VCE(V)
Cres
Coes
Cies
AM17182v1
0
2
4
6
8
10
12
14
16
0 25 50 75 100 125
VGE(V)
Qg (nC)
VCC = 480 V
IC = 20 A
Electrical characteristics STGFW20V60DF
8/15 DocID026148 Rev 2
Figure 14: Switching energy vs. collector current
Figure 15: Switching energy vs. gate resistance
Figure 16: Switching energy vs. junction temperature
Figure 17: Switching energy vs. collector emitter voltage
Figure 18: Switching times vs. collector current
Figure 19: Switching times vs. gate resistance
AM17185v1
0
200
400
600
800
1000
0 10 20 30 40
E (µJ)
Ic (A)
EON
EOFF
VCC 400V, VGE= 15V,
Rg=10Ω, TJ= 175°C
AM17184v1
100
300
500
700
0 10 20 30 40
E (µJ)
RG (Ω)
E ON
E OFF
VCC 400V, VGE= 15V,
IC =20 A, TJ= 175°C
AM17186v1
100
150
200
250
300
350
400
450
0 25 50 75 100 125 150 175
E (µJ)
TJ (ºC)
EON
EOFF
VCC 400V, VGE= 15V,IC= 20A, Rg= 10Ω
AM17187v1
100
200
300
400
500
600
150 200 250 300 350 400 450
E (µJ)
Vce (V)
EON
EOFF
VGE= 15V,TJ = 175 °C
IC = 20 A, Rg= 10 Ω
AM17188v1
1
10
100
0 10 20 30 40
t (ns)
Ic (A)
VCC=400V, VGE =15V,
Tj =175°C, Rg =10Ωtdoff
tdontf
tr
AM17189v1
tf
1
10
100
0 10 20 30 40
t (ns)
Rg (Ω)
VCC= 400V, VGE= 15V,
Tj=175°C Ic = 20 A
tdoff
tdon
tr
STGFW20V60DF Electrical characteristics
DocID026148 Rev 2 9/15
Figure 20: Reverse recovery current vs. diode current slope
Figure 21: Reverse recovery time vs. diode current slope
Figure 22: Reverse recovery charge vs. diode current slope
Figure 23: Reverse recovery energy vs. diode current slope
AM17190v1
0
10
20
30
40
50
0 500 1000 1500 2000 2500
Irm(A)
di/dt (A/µs)
Vr = 400V, IF= 20 A
TJ=25°C
TJ=175°C
AM17191v1
0
20
40
60
80
100
120
140
160
180
0 500 1000 1500 2000 2500
trr (µs)
di/dt (A/µs)
Vr = 400V, IF= 20 A
TJ=25°C
TJ=175°C
AM17192v1
0
200
400
600
800
1000
1200
1400
0 500 1000 1500 2000 2500
Qrr (nC)
di/dt (A/µs)
Vr = 400V,IF= 20 A
TJ=25°C
TJ=175°C
AM17193v1
0
100
200
300
400
500
600
700
800
0 500 1000 1500 2000 2500
Err (µJ)
di/dt (A/µs)
Vr = 400 V, IF= 20 A
TJ=25°C
TJ=175°C
Electrical characteristics STGFW20V60DF
10/15 DocID026148 Rev 2
10 µs
100 µs
1 ms
(single pulse TC=25°C,
TJ<=175°C; VGE=15V)
AM17179v2
0.01
0.1
1
10
1 10 100
IC (A)
VCE (V)
10-5
10-4
10-3
tp(s)10
-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cd=tp/t
tp
t
Single pulse
d=0.5
10-2
10-1
10
ZthTOF3T_A
CG20930
tp
Zth = k R
thj-C
δ = tp/ Ƭ
10-5 10-4 10-3 10-210-2
10-1
K
10-1 tp(s)
Ƭ
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.01
δ = 0.02δ = 0.05
SINGLE PULSE
Zth = k R
thj-C
δ = tp/ Ƭ
tpƬ
Figure 24: Safe operating area
Figure 25: Thermal impedance for IGBT
Figure 26: Thermal impedance for diode
STGFW20V60DF Test circuits
DocID026148 Rev 2 11/15
3 Test circuits Figure 27: Test circuit for inductive load
switching
Figure 28: Gate charge test circuit
Figure 29: Switching waveform
Figure 30: Diode reverse recovery waveform
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
t
AM01507v1
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
ts
tf
Qrr
IRRM
Package information STGFW20V60DF
12/15 DocID026148 Rev 2
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-3PF package information
Figure 31: TO-3PF package outline
7627132_D
STGFW20V60DF Package information
DocID026148 Rev 2 13/15
Table 8: TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A 5.30
5.70
C 2.80
3.20
D 3.10
3.50
D1 1.80
2.20
E 0.80
1.10
F 0.65
0.95
F2 1.80
2.20
G 10.30
11.50
G1
5.45
H 15.30
15.70
L 9.80 10 10.20
L2 22.80
23.20
L3 26.30
26.70
L4 43.20
44.40
L5 4.30
4.70
L6 24.30
24.70
L7 14.60
15
N 1.80
2.20
R 3.80
4.20
Dia 3.40
3.80
Revision history STGFW20V60DF
14/15 DocID026148 Rev 2
5 Revision history Table 9: Document revision history
Date Revision Changes
28-Mar-2014 1 Initial release
14-Feb-2017 2 Updated Table 1: "Device summary".
Minor text changes
STGFW20V60DF
DocID026148 Rev 2 15/15
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