Structured ZnO Growth Using Electrochemical Deposition for Light Management in Solar Cells

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    Structured ZnO growth usingelectrochemical deposition for lightmanagement in Solar cells

    Graduate Seminar

    Nanomolecular Science Program

    Jacobs University Bremen, Germany

    Uddin Md. Jalal

    March 02, 2012

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    Outline

    Basic science of Solar Energy conversion

    Thin-films in Solar Cell

    Overview of conventional light trappingtechnology and their limitations

    Proposed research project

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    What is Photovoltaics (PV)?

    Photovoltaics (PV) is a technology to generate electrical energy

    in the form of current and voltage from semiconductor when

    they are illuminated by photons.

    Why Photovoltaics?

    Direct conversion of sunlight to electricity is possible usingSolar cells

    Environment-friendly renewable energy source

    Guaranteed energy availability

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    Basic Process of Photovoltaics

    Energy Generation

    The basic processes behind the PV

    effect are:

    Generation of the charge carriersdue to the absorption of photons

    in the materials that form a junction

    Subsequent separation of the

    photo-generated charge carriers

    in the junction

    Collection of the photo-generated

    charge carriers at the terminals of

    the junction

    Fig.1 Illuminated semiconductor illustratingincoming, reflected and absorbed light in thesemiconductor and light passing through thesemiconductor.

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    Fig.3 Boosting electron at higher energyFig.2 Electron-hole pair generation

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    Fig.4 Transfer electron to contact terminals Fig.5 Transfer of energy to the external circuit

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    Conversion of Solar Energy

    Fig.6 Solar spectrum at different airmasses

    The solar spectrum shows that forAM1.0, a maximum intensity is at

    the wavelength l = 0.5 mm and itfalls to half at l = 1 mm.

    AM = 1/cos, is the angle of theposition of the sun with a vertical

    line.

    Stephen J. Fonash (2010) Solar Cell Devices Physics, Elsevier, USA, 2nd Ed., 1-7

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    Fig.7 Cross-section of a typical Solar Cell

    The total input power PIN :

    The output power POUT :

    POUT = JV

    Fig.8 J-V Characteristic of Solar Cell underillumination

    The best efficiency of the PV energy

    conversion process for the cell of Fig. 4:

    The fill factor:

    cs AAWhen

    in

    mm

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    VJ

    cs

    c

    s

    AAWhenA

    A

    in

    mm

    P

    VJ

    ocsc

    mpmp

    VI

    VIFF

    Stephen J. Fonash (2010) Solar Cell Devices Physics, Elsevier, USA, 2nd Ed., 1-7

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    Motivation with Thin-film Silicon

    Material

    Silicon is most commonly used material for photovoltaic device.Because-

    Silicon is abundant and easy to obtain from earth crust

    Well characterized and use of Si material in thin-film leads to the costminimization

    The thickness varies for a few mm to 10 mm with diffusion lengthof 10-20 nm

    Best efficiency of single Si is 24.7% with maxm theoretical value of 30%

    K. L. Chopra et al. (2004) Prog. Photovolt: Res. Appl. 12, 69

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    Thin film Si forms active layer of the thickness of a few mm

    Most of the photons dont contribute to the electron-hole pair generation

    Requires additional light trapping techniques

    Major Challenge with Si Solar cell

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    Overview of Light Trapping Technology

    Light trapping mechanism is required

    To increase the optical path length inside the active layer To improve absorption in the active layer

    To prevent light that otherwise would be lost

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    Methods to trap light are-

    Anti reflection coating Use of back reflector

    Surface texturing

    Methods to Trap Light Inside Solar Cell

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    Materials that has lower refractive index (nARC)

    Materials with refractive index of 1.87

    Materials thickness of d1= lo/4n1 Prominent ARC materials are ZnO, Si3N4

    Fig.9 Simplified schematic of thin film Si solarcell showing anti-reflecting coating

    Anti Reflection Coating (ARC):

    Albert Polman,Light management in thin- film solar cells, Center for Nanophotonics

    FOM-Institute AMOLF, Amsterdam, The Netherlands

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    Fig.10 (a) Thin film Si solar cell showing the effect of thicknessof anti-reflecting coating on (b) Comparison of surface reflectionwith and without antireflection coating

    (a) (b)

    http://pveducation.org/pvcdrom/design/anti-reflection-coatings

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    Back Reflector & Surface Texturing:

    Fig.11 Cross-section of microcrystalline thin film Si solar device showing (a) Flat backreflector (b) Textured back reflector

    Kenji Yamamoto (2003)JSAP International, 7, 12-19

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    16Kenji Yamamoto (2003)JSAP International, 7, 12-19

    Fig.12 Efficiency of microcrystalline thin film Si solar device having (a) Flat backreflector (b) Textured back reflector

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    Limits of the Conventional Light Trapping

    The maximum possible enhancement has an upper limit which is given

    by the absorption coefficient of 4n2/ Sin2,

    where, n = the refractive index of the active material

    = the angle of emission cone in the medium

    surrounding the solar cell

    But this limit is no applicable in nanophotonic regime using nanostructures

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    Different Approaches to Enhance Light

    Trapping to Avoid Conventional Limits

    Different approaches:

    Metal nanostructures

    Photonic crystals

    Optical interference in multilayer stacks

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    Metal Nanostructures to Enhance

    Light Trapping

    Fig.13 Light trapping by (a) scattering from metallic or dielectric nanostructures at theSurface of the solar cell, (b) scattering of light from a corrugated metal back surfacecouple to surface plasmon polariton

    H.A. Atwater and A. Polman (2010),Nature Materials 9, 205

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    Proposed ModelStructured ZnO growth using electrochemical

    deposition for light management in Solar cell

    Why ZnO?

    Its a wide band gap (3.3 eV) material with semi conducting properties

    The optical and chemical properties as well as the structures of ZnO

    rely on its preparation method

    Solution chemistry can be suitably used for ZnO growth with low

    temperature of less than 100C.

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    Methodologyfor Fabrication of Solar Cell

    Step 1:Collection of Indium Tin Oxide (ITO) on glass from the commercial source

    Step 2:Growth ZnO nanorods on top of ITO using electrochemical deposition

    Fig.14 Schematic setup for the ZnO growth experiment

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    Fig.15 Proposed design of nanorod-based hybrid solar cell

    Proposed Structure

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    Working mechanism of Proposed Model

    Fig.16 Explanation of working of Proposed model with charge separating diagram

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    Working Mechanism of Proposed Model

    Top metal electrode should be transparent

    Light comes through the top transparent electrode

    and falls on the P3HT semiconductor

    Electrons from HOMO in P3HT get excited to LUMO

    level and then they go to the LUMO level of ZnO

    and get collected by the transparent top electrode

    Absence of electrons in the HOMO level of P3HT

    creates holes, and they are collected at the ITO

    Thus charge carriers generate current

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    Conclusion

    Use of indium-tin oxide (ITO) as the cathode

    It has good conducting properties

    Use of poly-3-hexylthiophene (P3HT) as active layer

    It possesses high charge-carrier mobility

    It has good optical absorption properties

    Use of P3HT in organic solar cell as donar material provides the

    efficiency of about 5%

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    Further Research to Continue

    To replace highly cost contact materials with lower cost materials such ascopper or carbon-based materials (nanotubes)

    Low-cost (i.e. abundant) materials must be incorporated into reliable, highperformance PV modules and systems

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    Thanks for your kind attention!!!