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Ž .Diamond and Related Materials 10�9-10 2001 1939�1945
Subject Index for Volume 10�9-10
�-SiCŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam
deposition, 1927
915 MHzDiamond films grown by a 60-kW microwave plasma chemical vapor
deposition system, 1569
AdhesionAdherent diamond coatings on cemented carbide substrates with
different cobalt contents, 1700
Adhesion strengthEffect of adhesion strength of DLC to steel on the coating erosion
mechanism, 1824
Amorphous carbon compositeField emission from metal-containing amorphous carbon composite
films, 1727
Amorphous hydrogenated carbonMechanical properties of a-C:H multilayer films, 1833
Anisotropic etchingAnisotropic etching of a fine column on a single crystal diamond,
1732
ApplicationsCVD diamond for components and emitters, 1736Growth of detector grade CVD diamond films and microscopic
interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783
Diamond-like carbon films in multilayered interference coatingsfor IR optical elements, 1846
Arc pulseEffect of adhesion strength of DLC to steel on the coating erosion
mechanism, 1824
Atmospheric pressure DC plasmaOptical diagnostics of an atmospheric pressure diamond-depositing
DC plasma reactor, 1565
BiasGrowth of nanocrystalline diamond films by biased enhanced
microwave plasma chemical vapor deposition, 1592
Bias-enhanced nucleationTheoretical analysis of ion bombardment roles in the bias-enhanced
nucleation process of CVD diamond, 1622
BondingXPS studies of amorphous SiCN thin films prepared by nitrogen
ion-assisted pulsed-laser deposition of SiC target, 1921
Boron dopingNew directions in structuring and electrochemical applications of
boron-doped diamond thin films, 1799
Boron nitrideStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
Buffer layerCharacteristics of Si�C�N films deposited by microwave plasma
CVD on Si wafers with various buffer layer materials, 1910
CarbidesMicromechanical and microtribological properties of BCN thin films
near the B C composition deposited by r.f. magnetron4sputtering, 1892
Carbon nanotubeElectronic properties of carbon nanotubes with pentagon�heptagon
pair defects, 1818
Carbon nanotube emittersAn under-gate triode structure field emission display with carbon
nanotube emitters, 1705
Carbon nanotubesCarbon nanotube growth by rapid thermal processing, 1810
Carbon nitrideŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface
nitrided using 500-eV N� ion beam, 16762
Carbon nitride filmChemical bonding in carbon nitride films studied by X-ray
spectroscopies, 1897
Carbon nitride filmsPreparation of nitrogen-rich CN films with inductively coupledx
plasma CVD and pulsed laser deposition, 1901
Catalytic processThe effect of metal�solvent properties on the alteration of
specific zones on a carbon phase diagram, 1597
CathodoluminescenceNear-field cathodoluminescence of nanoscopic diamond properties,
1647Ž .Cathodoluminescence of phosphorus doped 111 homoepitaxial
diamond thin films, 1652Change of luminescence character of Ib diamonds with HPHT
treatment, 1665Characteristics of Si�C�N films deposited by microwave plasma
CVD on Si wafers with various buffer layer materials, 1910
Chemical bondingChemical bonding in carbon nitride films studied by X-ray
spectroscopies, 1897
Chemical non-equilibriumOptical diagnostics of an atmospheric pressure diamond-depositing
DC plasma reactor, 1565
Elsevier Science B.V.Ž .PII: S 0 9 2 5 - 9 6 3 5 0 1 0 0 5 1 8 - 0
Subject Index of Volume 10�9-101940
Chemical vapor depositionDiamond films grown by a 60-kW microwave plasma chemical vapor
deposition system, 1569Growth of nanocrystalline diamond films by biased enhanced
microwave plasma chemical vapor deposition, 1592� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited
on sapphire, 1633The introducing of fluorine into the deposition of BN: a
successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868
Ž .Chemical vapor deposition CVDŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface
explained by surface tilt, 1655
Chemical vapour depositionLaser plasma CVD diamond reactor, 1559Synthesis of highly oriented CVD diamond films by ultra short bias
enhanced nucleation step, 1637Diamond electro-mechanical micro devices � technology and
performance, 1684
Ž .Chemical vapour deposition CVDMechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855
Chemical vapour deposition diamondHigh quality CVD diamond for detection applications: structural
characterization, 1788
ChromiumEffect of chromium on the kinetics of the contact melting and the
graphite-to-diamond transformation in the Co�Fe�C system, 1602
Confocal RamanStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
CorrelationsSimilarity in field electron emission from nanocrystalline diamond
and related materials, 1719
Coulomb staircaseNumerical simulation of I�V characteristics of carbon nanotube
based tunneling systems, 1814
Cubic boron nitrideThe introducing of fluorine into the deposition of BN: a
successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868
Depth resolved stress investigations of c-BN thin films, 1875Synthesis and characterization of cubic boron nitride films:
substrate bias and ion flux effects, 1886
Cut-off frequencyPotential applications of surface channel diamond field-effect
transistors, 1743
CVDVibrational sum-frequency observation of synthetic diamonds, 1643Broadband electronics for CVD-diamond detectors, 1765Growth of detector grade CVD diamond films and microscopic
interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783
CVD diamondOptical diagnostics of an atmospheric pressure diamond-depositing
DC plasma reactor, 1565The CVD growth of micro crystals of diamond, 1584Theoretical analysis of ion bombardment roles in the bias-enhanced
nucleation process of CVD diamond, 1622The use of CVD-diamond for heavy-ion detection, 1770
CVD diamond vacuum windowsMPACVD-diamond windows for high-power and long-pulse
millimeter wave transmission, 1692
DC arc plasma jetLarge area high quality diamond film deposition by high power DC
arc plasma jet operating at gas recycling mode, 1551
DefectChange of luminescence character of Ib diamonds with HPHT
treatment, 1665Growth of detector grade CVD diamond films and microscopic
interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783
DefectsStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
DetectorsHigh quality CVD diamond for detection applications: structural
characterization, 1788
DiamondDiamond films grown by a 60-kW microwave plasma chemical vapor
deposition system, 1569Development of single- and multi-layered metallic films on diamond
by ion beam-assisted deposition, 1578Effect of chromium on the kinetics of the contact melting and the
graphite-to-diamond transformation in the Co�Fe�C system, 1602The high temperature�high pressure sintering of diamond�Cu�
Si�B composite, 1607Early stages of the HFCVD process on multi-vicinal silicon
Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612First stages of diamond nucleation on iridium buffer layers, 1617
� � � �The role of methyl radicals and acetylene in 100 vs. 111diamond growth, 1627
� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate depositedon sapphire, 1633
Synthesis of highly oriented CVD diamond films by ultra short biasenhanced nucleation step, 1637
Ž .Cathodoluminescence of phosphorus doped 111 homoepitaxialdiamond thin films, 1652
Analysis of piezoresistive properties of CVD-diamond films onsilicon, 1670
Ž .AFM and XPS studies of a homoepitaxial diamond 001 surfacenitrided using 500-eV N� ion beam, 16762
Diamond electro-mechanical micro devices � technology andperformance, 1684
Field emission properties of diamond and carbon nanotubes, 1709Imaging electron emission from diamond film surfaces: N-doped
diamond vs. nanostructured diamond, 1714Anisotropic etching of a fine column on a single crystal diamond,
1732Potential applications of surface channel diamond field-effect
transistors, 1743The search for donors in diamond, 1749Using ion implantation to dope diamond � an update on selected
issues, 1756Broadband electronics for CVD-diamond detectors, 1765
Diamond coated toolsAdherent diamond coatings on cemented carbide substrates with
different cobalt contents, 1700
Diamond defectsNear-field cathodoluminescence of nanoscopic diamond properties,
1647
Subject Index of Volume 10�9-10 1941
Diamond filmSelective deposition of diamond films on insulators by selective
seeding with a double-layer mask, 1573
Diamond filmsLaser plasma CVD diamond reactor, 1559Synthesis of nanocrystalline diamond films using microwave plasma
CVD, 1588Growth of nanocrystalline diamond films by biased enhanced
microwave plasma chemical vapor deposition, 1592Similarity in field electron emission from nanocrystalline diamond
and related materials, 1719New directions in structuring and electrochemical applications of
boron-doped diamond thin films, 1799
Diamond sensorCVD diamond sensors for charged particle detection, 1778
Diamond-like carbonEffect of adhesion strength of DLC to steel on the coating erosion
mechanism, 1824Diamond-like carbon by pulsed laser deposition from a camphoric
carbon target: effect of phosphorus incorporation, 1839Diamond-like carbon films in multilayered interference coatings
for IR optical elements, 1846
Ž .Diamond-like carbon DLCWear-resistant multilayered diamond-like carbon coating prepared
by pulse biased arc ion plating, 1850Mechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855
Diamond-like carbon coatingCalculation of the elastic-stressed state under concentrated
loading in diamond-like�metal substrate system, 1829
Diamond-like carbon filmsProperties of diamond-like carbon films on crystalline quartz and
lithium niobate, 1843Mechanical properties of DLC films prepared in acetylene and
methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862
DiffusionEPR and optical imaging of the growth-sector dependence of
radiation-damage defect production in synthetic diamond, 1681
Diffusion barrier layerAdherent diamond coatings on cemented carbide substrates with
different cobalt contents, 1700
DopantThe search for donors in diamond, 1749
DopingUsing ion implantation to dope diamond � an update on selected
issues, 1756
Double-layer maskSelective deposition of diamond films on insulators by selective
seeding with a double-layer mask, 1573
EELSStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
Effective modulusBonding characterization and nano-indentation study of the
amorphous SiC N films with and without hydrogen incorporation,x y
1916
Elastic-stressed stateCalculation of the elastic-stressed state under concentrated
loading in diamond-like�metal substrate system, 1829
Electro-mechanical micro devicesDiamond electro-mechanical micro devices � technology and
performance, 1684
ElectrochemistryRelationships between surface character and electrochemical
processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804
ElectrodesNew directions in structuring and electrochemical applications of
boron-doped diamond thin films, 1799
Electron cyclotron heatingMPACVD-diamond windows for high-power and long-pulse
millimeter wave transmission, 1692
Electron cyclotron resonanceMechanical properties of DLC films prepared in acetylene and
methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862
Ž .Electron cyclotron resonance ECRMechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855
Electron donorThe search for donors in diamond, 1749
Electron emissionImaging electron emission from diamond film surfaces: N-doped
diamond vs. nanostructured diamond, 1714
Electronic propertiesElectronic properties of carbon nanotubes with pentagon�heptagon
pair defects, 1818
Emission propertiesSimilarity in field electron emission from nanocrystalline diamond
and related materials, 1719
Emitter arrayAnisotropic etching of a fine column on a single crystal diamond,
1732
Epitaxial growthŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam
deposition, 1927
Epitaxy� � � �The role of methyl radicals and acetylene in 100 vs. 111
diamond growth, 1627� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited
on sapphire, 1633
Erosion mechanismEffect of adhesion strength of DLC to steel on the coating erosion
mechanism, 1824
Excimer laserTemporal response of UV sensors made of highly oriented diamond
films by 193 and 313 nm laser pulses, 1794
Field emissionField emission properties of diamond and carbon nanotubes, 1709Field emission from metal-containing amorphous carbon composite
films, 1727
Subject Index of Volume 10�9-101942
CVD diamond for components and emitters, 1736Characteristics of Si�C�N films deposited by microwave plasma
CVD on Si wafers with various buffer layer materials, 1910
Field emission displaysAn under-gate triode structure field emission display with carbon
nanotube emitters, 1705
Field-effect transistorsPotential applications of surface channel diamond field-effect
transistors, 1743
Film structureStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
Filtered cathodic vacuum arcField emission from metal-containing amorphous carbon composite
films, 1727
FluorineThe introducing of fluorine into the deposition of BN: a
successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868
Free standingAnalysis of piezoresistive properties of CVD-diamond films on
silicon, 1670
FrictionMechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855
Gas recyclingLarge area high quality diamond film deposition by high power DC
arc plasma jet operating at gas recycling mode, 1551
Grain sizeGrowth of nanocrystalline diamond films by biased enhanced
microwave plasma chemical vapor deposition, 1592Growth of detector grade CVD diamond films and microscopic
interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783
Structure analysis of cBN films prepared by DC jet plasma CVDfrom an Ar�N �BF �H gas system, 18812 3 2
GyrotronsMPACVD-diamond windows for high-power and long-pulse
millimeter wave transmission, 1692
Hard materialsMicromechanical and microtribological properties of BCN thin films
near the B C composition deposited by r.f. magnetron4sputtering, 1892
HardnessMechanical properties of a-C:H multilayer films, 1833Bonding characterization and nano-indentation study of the
amorphous SiC N films with and without hydrogen incorporation,x y1916
Heavy-ion timing detectorsThe use of CVD-diamond for heavy-ion detection, 1770
Hetero-epitaxySynthesis of highly oriented CVD diamond films by ultra short bias
enhanced nucleation step, 1637
HeteroepitaxyFirst stages of diamond nucleation on iridium buffer layers, 1617
High power millimeter wavesMPACVD-diamond windows for high-power and long-pulse
millimeter wave transmission, 1692
High pressure�high temperature synthesisThe effect of metal�solvent properties on the alteration of
specific zones on a carbon phase diagram, 1597
Highly oriented diamondTemporal response of UV sensors made of highly oriented diamond
films by 193 and 313 nm laser pulses, 1794
HomoepitaxyŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface
explained by surface tilt, 1655
HPHT diamondChange of luminescence character of Ib diamonds with HPHT
treatment, 1665
Hydrogen terminated surface conductive layerPotential applications of surface channel diamond field-effect
transistors, 1743
Inductively coupled plasma chemical vapour depositionPreparation of nitrogen-rich CN films with inductively coupledx
plasma CVD and pulsed laser deposition, 1901
Ion beamŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam
deposition, 1927
Ž .Ion beam-assisted deposition IBADDevelopment of single- and multi-layered metallic films on diamond
by ion beam-assisted deposition, 1578
Ion bombardmentFirst stages of diamond nucleation on iridium buffer layers, 1617Theoretical analysis of ion bombardment roles in the bias-enhanced
nucleation process of CVD diamond, 1622
Ion fluxSynthesis and characterization of cubic boron nitride films:
substrate bias and ion flux effects, 1886
Ion implantationUsing ion implantation to dope diamond � an update on selected
issues, 1756
Ion to deposited atom ratioSynthesis and characterization of cubic boron nitride films:
substrate bias and ion flux effects, 1886
Iridium� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited
on sapphire, 1633
Kinetics� � � �The role of methyl radicals and acetylene in 100 vs. 111
diamond growth, 1627
Large area high quality diamond filmsLarge area high quality diamond film deposition by high power DC
arc plasma jet operating at gas recycling mode, 1551
Large current densityField emission properties of diamond and carbon nanotubes, 1709
LaserLaser plasma CVD diamond reactor, 1559
Magnetron sputteringSynthesis and characterization of cubic boron nitride films:
substrate bias and ion flux effects, 1886Chemical bonding in carbon nitride films studied by X-ray
spectroscopies, 1897
Subject Index of Volume 10�9-10 1943
Master equationNumerical simulation of I�V characteristics of carbon nanotube
based tunneling systems, 1814
Mechanical propertiesDiamond-like carbon films in multilayered interference coatings
for IR optical elements, 1846Mechanical properties of DLC films prepared in acetylene and
methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862
Mechanism� � � �The role of methyl radicals and acetylene in 100 vs. 111
diamond growth, 1627
MetallizationDevelopment of single- and multi-layered metallic films on diamond
by ion beam-assisted deposition, 1578
Methane and acetylene plasmaMechanical properties of DLC films prepared in acetylene and
methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862
Micro diamondThe CVD growth of micro crystals of diamond, 1584
Micro-machiningCVD diamond for components and emitters, 1736
MicrostructureSynthesis of nanocrystalline diamond films using microwave plasma
CVD, 1588
MicrowaveDiamond films grown by a 60-kW microwave plasma chemical vapor
deposition system, 1569
ModelCalculation of the elastic-stressed state under concentrated
loading in diamond-like�metal substrate system, 1829
Multi-layer coatingWear-resistant multilayered diamond-like carbon coating prepared
by pulse biased arc ion plating, 1850
N-dopedImaging electron emission from diamond film surfaces: N-doped
diamond vs. nanostructured diamond, 1714
Nano-indentationBonding characterization and nano-indentation study of the
amorphous SiC N films with and without hydrogen incorporation,x y1916
NanotubeNumerical simulation of I�V characteristics of carbon nanotube
based tunneling systems, 1814
NanotubesField emission properties of diamond and carbon nanotubes, 1709
NitridationŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface
nitrided using 500-eV N� ion beam, 16762
NitridesSimilarity in field electron emission from nanocrystalline diamond
and related materials, 1719
NitrogenEPR and optical imaging of the growth-sector dependence of
radiation-damage defect production in synthetic diamond, 1681
Nitrogen impurityChange of luminescence character of Ib diamonds with HPHT
treatment, 1665
Noise figureBroadband electronics for CVD-diamond detectors, 1765
NucleationEarly stages of the HFCVD process on multi-vicinal silicon
Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612First stages of diamond nucleation on iridium buffer layers, 1617Depth resolved stress investigations of c-BN thin films, 1875
Nucleation and growthThe effect of metal�solvent properties on the alteration of
specific zones on a carbon phase diagram, 1597
Off-angleŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface
explained by surface tilt, 1655
Optical diagnosticsOptical diagnostics of an atmospheric pressure diamond-depositing
DC plasma reactor, 1565
Optoelectronic propertiesDiamond-like carbon by pulsed laser deposition from a camphoric
carbon target: effect of phosphorus incorporation, 1839
Particle detectorCVD diamond sensors for charged particle detection, 1778
PhosphorusŽ .Cathodoluminescence of phosphorus doped 111 homoepitaxial
diamond thin films, 1652Diamond-like carbon by pulsed laser deposition from a camphoric
carbon target: effect of phosphorus incorporation, 1839
PhotoluminescenceHigh quality CVD diamond for detection applications: structural
characterization, 1788
PiezoresistivityAnalysis of piezoresistive properties of CVD-diamond films on
silicon, 1670
Pixel detectorCVD diamond sensors for charged particle detection, 1778
PlasmaLaser plasma CVD diamond reactor, 1559
Platinum� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited
on sapphire, 1633
PolishingThe CVD growth of micro crystals of diamond, 1584
Poly-crystallineThe high temperature�high pressure sintering of diamond�Cu�
Si�B composite, 1607
PressureEffect of chromium on the kinetics of the contact melting and the
graphite-to-diamond transformation in the Co�Fe�C system, 1602
Pulse arc ion platingWear-resistant multilayered diamond-like carbon coating prepared
by pulse biased arc ion plating, 1850
Pulsed laser ablationXPS studies of amorphous SiCN thin films prepared by nitrogen
ion-assisted pulsed-laser deposition of SiC target, 1921
Subject Index of Volume 10�9-101944
Pulsed laser depositionDiamond-like carbon by pulsed laser deposition from a camphoric
carbon target: effect of phosphorus incorporation, 1839Preparation of nitrogen-rich CN films with inductively coupledx
plasma CVD and pulsed laser deposition, 1901
Radiation damageCVD diamond sensors for charged particle detection, 1778
Radiation defectsUsing ion implantation to dope diamond � an update on selected
issues, 1756
Radiation-induced defectsEPR and optical imaging of the growth-sector dependence of
radiation-damage defect production in synthetic diamond, 1681
Raman spectraThe introducing of fluorine into the deposition of BN: a
successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868
Raman spectroscopySynthesis of nanocrystalline diamond films using microwave plasma
CVD, 1588High quality CVD diamond for detection applications: structural
characterization, 1788
Rapid thermal processingCarbon nanotube growth by rapid thermal processing, 1810
Reflection high-energy electron diffractionŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface
explained by surface tilt, 1655
Sapphire� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited
on sapphire, 1633
Scanning electron microscopyNear-field cathodoluminescence of nanoscopic diamond properties,
1647
Selective depositionSelective deposition of diamond films on insulators by selective
seeding with a double-layer mask, 1573
Selective seedingSelective deposition of diamond films on insulators by selective
seeding with a double-layer mask, 1573
Semiconducting diamondRelationships between surface character and electrochemical
processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804
SensorsAnalysis of piezoresistive properties of CVD-diamond films on
silicon, 1670
Sharp tipAnisotropic etching of a fine column on a single crystal diamond,
1732
SiCNXPS studies of amorphous SiCN thin films prepared by nitrogen
ion-assisted pulsed-laser deposition of SiC target, 1921
Silicon carbon nitrideCharacteristics of Si�C�N films deposited by microwave plasma
CVD on Si wafers with various buffer layer materials, 1910Bonding characterization and nano-indentation study of the
amorphous SiC N films with and without hydrogen incorporation,x y
1916
Silicon stepEarly stages of the HFCVD process on multi-vicinal silicon
Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612
Single crystalAnisotropic etching of a fine column on a single crystal diamond,
1732
Single-particle processingBroadband electronics for CVD-diamond detectors, 1765The use of CVD-diamond for heavy-ion detection, 1770
SpectroscopyVibrational sum-frequency observation of synthetic diamonds, 1643Near-field cathodoluminescence of nanoscopic diamond properties,
1647
SteelMechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855
StressThe introducing of fluorine into the deposition of BN: a
successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868
Depth resolved stress investigations of c-BN thin films, 1875
SurfaceVibrational sum-frequency observation of synthetic diamonds, 1643
Surface acoustic waveProperties of diamond-like carbon films on crystalline quartz and
lithium niobate, 1843
Surface terminationRelationships between surface character and electrochemical
processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804
Synthetic diamondVibrational sum-frequency observation of synthetic diamonds, 1643EPR and optical imaging of the growth-sector dependence of
radiation-damage defect production in synthetic diamond, 1681
TEMStructure analysis of cBN films prepared by DC jet plasma CVD
from an Ar�N �BF �H gas system, 18812 3 2
TemperatureEffect of chromium on the kinetics of the contact melting and the
graphite-to-diamond transformation in the Co�Fe�C system, 1602
Tetrahedral amorphous carbon filmsProperties of diamond-like carbon films on crystalline quartz and
lithium niobate, 1843
Thermal stabilityDevelopment of single- and multi-layered metallic films on diamond
by ion beam-assisted deposition, 1578
Thin filmsMicromechanical and microtribological properties of BCN thin films
near the B C composition deposited by r.f. magnetron4
sputtering, 1892
Tight binding methodElectronic properties of carbon nanotubes with pentagon�heptagon
pair defects, 1818
Subject Index of Volume 10�9-10 1945
Topological defectElectronic properties of carbon nanotubes with pentagon�heptagon
pair defects, 1818
Transient photocurrentTemporal response of UV sensors made of highly oriented diamond
films by 193 and 313 nm laser pulses, 1794
Transmission electron microscopyEarly stages of the HFCVD process on multi-vicinal silicon
Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612
Triode structureAn under-gate triode structure field emission display with carbon
nanotube emitters, 1705
Tungsten carbideAdherent diamond coatings on cemented carbide substrates with
different cobalt contents, 1700
TunnelingNumerical simulation of I�V characteristics of carbon nanotube
based tunneling systems, 1814
Twinning� � � �The role of methyl radicals and acetylene in 100 vs. 111
diamond growth, 1627
Ultraviolet sensorTemporal response of UV sensors made of highly oriented diamond
films by 193 and 313 nm laser pulses, 1794
Under-gate structureAn under-gate triode structure field emission display with carbon
nanotube emitters, 1705
WaferDiamond films grown by a 60-kW microwave plasma chemical vapor
deposition system, 1569
WearThe high temperature�high pressure sintering of diamond�Cu�
Si�B composite, 1607Diamond-like carbon films in multilayered interference coatings
for IR optical elements, 1846Mechanical and tribological properties of diamond-like carbon
films prepared on steel by ECR-CVD process, 1855Micromechanical and microtribological properties of BCN thin films
near the B C composition deposited by r.f. magnetron4
sputtering, 1892
X-Ray photoelectron spectroscopyXPS studies of amorphous SiCN thin films prepared by nitrogen
ion-assisted pulsed-laser deposition of SiC target, 1921
Ž .X-Ray photoelectron spectroscopy XPSŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface
nitrided using 500-eV N� ion beam, 16762
X-Ray spectroscopiesChemical bonding in carbon nitride films studied by X-ray
spectroscopies, 1897
Young’s modulusMechanical properties of a-C:H multilayer films, 1833