7
Ž . Diamond and Related Materials 109-10 2001 19391945 Subject Index for Volume 109-10 -SiC Ž . Epitaxial growth of -SiC on Si 100 by low energy ion beam deposition, 1927 915 MHz Diamond films grown by a 60-kW microwave plasma chemical vapor deposition system, 1569 Adhesion Adherent diamond coatings on cemented carbide substrates with different cobalt contents, 1700 Adhesion strength Effect of adhesion strength of DLC to steel on the coating erosion mechanism, 1824 Amorphous carbon composite Field emission from metal-containing amorphous carbon composite films, 1727 Amorphous hydrogenated carbon Mechanical properties of a-C:H multilayer films, 1833 Anisotropic etching Anisotropic etching of a fine column on a single crystal diamond, 1732 Applications CVD diamond for components and emitters, 1736 Growth of detector grade CVD diamond films and microscopic interpretation of their efficiency and charge collection distance in the normal and pumped states, 1783 Diamond-like carbon films in multilayered interference coatings for IR optical elements, 1846 Arc pulse Effect of adhesion strength of DLC to steel on the coating erosion mechanism, 1824 Atmospheric pressure DC plasma Optical diagnostics of an atmospheric pressure diamond-depositing DC plasma reactor, 1565 Bias Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition, 1592 Bias-enhanced nucleation Theoretical analysis of ion bombardment roles in the bias-enhanced nucleation process of CVD diamond, 1622 Bonding XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target, 1921 Boron doping New directions in structuring and electrochemical applications of boron-doped diamond thin films, 1799 Boron nitride Structure analysis of cBN films prepared by DC jet plasma CVD from an Ar N BF H gas system, 1881 2 3 2 Buffer layer Characteristics of Si CN films deposited by microwave plasma CVD on Si wafers with various buffer layer materials, 1910 Carbides Micromechanical and microtribological properties of BCN thin films near the BC composition deposited by r.f. magnetron 4 sputtering, 1892 Carbon nanotube Electronic properties of carbon nanotubes with pentagonheptagon pair defects, 1818 Carbon nanotube emitters An under-gate triode structure field emission display with carbon nanotube emitters, 1705 Carbon nanotubes Carbon nanotube growth by rapid thermal processing, 1810 Carbon nitride Ž . AFM and XPS studies of a homoepitaxial diamond 001 surface nitrided using 500-eV N ion beam, 1676 2 Carbon nitride film Chemical bonding in carbon nitride films studied by X-ray spectroscopies, 1897 Carbon nitride films Preparation of nitrogen-rich CN films with inductively coupled x plasma CVD and pulsed laser deposition, 1901 Catalytic process The effect of metal solvent properties on the alteration of specific zones on a carbon phase diagram, 1597 Cathodoluminescence Near-field cathodoluminescence of nanoscopic diamond properties, 1647 Ž . Cathodoluminescence of phosphorus doped 111 homoepitaxial diamond thin films, 1652 Change of luminescence character of Ib diamonds with HPHT treatment, 1665 Characteristics of Si CN films deposited by microwave plasma CVD on Si wafers with various buffer layer materials, 1910 Chemical bonding Chemical bonding in carbon nitride films studied by X-ray spectroscopies, 1897 Chemical non-equilibrium Optical diagnostics of an atmospheric pressure diamond-depositing DC plasma reactor, 1565 Elsevier Science B.V. Ž . PII: S 0 9 2 5 - 9 6 3 5 01 00518-0

Subject Index of Volume 10/9-10

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Page 1: Subject Index of Volume 10/9-10

Ž .Diamond and Related Materials 10�9-10 2001 1939�1945

Subject Index for Volume 10�9-10

�-SiCŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam

deposition, 1927

915 MHzDiamond films grown by a 60-kW microwave plasma chemical vapor

deposition system, 1569

AdhesionAdherent diamond coatings on cemented carbide substrates with

different cobalt contents, 1700

Adhesion strengthEffect of adhesion strength of DLC to steel on the coating erosion

mechanism, 1824

Amorphous carbon compositeField emission from metal-containing amorphous carbon composite

films, 1727

Amorphous hydrogenated carbonMechanical properties of a-C:H multilayer films, 1833

Anisotropic etchingAnisotropic etching of a fine column on a single crystal diamond,

1732

ApplicationsCVD diamond for components and emitters, 1736Growth of detector grade CVD diamond films and microscopic

interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783

Diamond-like carbon films in multilayered interference coatingsfor IR optical elements, 1846

Arc pulseEffect of adhesion strength of DLC to steel on the coating erosion

mechanism, 1824

Atmospheric pressure DC plasmaOptical diagnostics of an atmospheric pressure diamond-depositing

DC plasma reactor, 1565

BiasGrowth of nanocrystalline diamond films by biased enhanced

microwave plasma chemical vapor deposition, 1592

Bias-enhanced nucleationTheoretical analysis of ion bombardment roles in the bias-enhanced

nucleation process of CVD diamond, 1622

BondingXPS studies of amorphous SiCN thin films prepared by nitrogen

ion-assisted pulsed-laser deposition of SiC target, 1921

Boron dopingNew directions in structuring and electrochemical applications of

boron-doped diamond thin films, 1799

Boron nitrideStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

Buffer layerCharacteristics of Si�C�N films deposited by microwave plasma

CVD on Si wafers with various buffer layer materials, 1910

CarbidesMicromechanical and microtribological properties of BCN thin films

near the B C composition deposited by r.f. magnetron4sputtering, 1892

Carbon nanotubeElectronic properties of carbon nanotubes with pentagon�heptagon

pair defects, 1818

Carbon nanotube emittersAn under-gate triode structure field emission display with carbon

nanotube emitters, 1705

Carbon nanotubesCarbon nanotube growth by rapid thermal processing, 1810

Carbon nitrideŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface

nitrided using 500-eV N� ion beam, 16762

Carbon nitride filmChemical bonding in carbon nitride films studied by X-ray

spectroscopies, 1897

Carbon nitride filmsPreparation of nitrogen-rich CN films with inductively coupledx

plasma CVD and pulsed laser deposition, 1901

Catalytic processThe effect of metal�solvent properties on the alteration of

specific zones on a carbon phase diagram, 1597

CathodoluminescenceNear-field cathodoluminescence of nanoscopic diamond properties,

1647Ž .Cathodoluminescence of phosphorus doped 111 homoepitaxial

diamond thin films, 1652Change of luminescence character of Ib diamonds with HPHT

treatment, 1665Characteristics of Si�C�N films deposited by microwave plasma

CVD on Si wafers with various buffer layer materials, 1910

Chemical bondingChemical bonding in carbon nitride films studied by X-ray

spectroscopies, 1897

Chemical non-equilibriumOptical diagnostics of an atmospheric pressure diamond-depositing

DC plasma reactor, 1565

Elsevier Science B.V.Ž .PII: S 0 9 2 5 - 9 6 3 5 0 1 0 0 5 1 8 - 0

Page 2: Subject Index of Volume 10/9-10

Subject Index of Volume 10�9-101940

Chemical vapor depositionDiamond films grown by a 60-kW microwave plasma chemical vapor

deposition system, 1569Growth of nanocrystalline diamond films by biased enhanced

microwave plasma chemical vapor deposition, 1592� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited

on sapphire, 1633The introducing of fluorine into the deposition of BN: a

successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868

Ž .Chemical vapor deposition CVDŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface

explained by surface tilt, 1655

Chemical vapour depositionLaser plasma CVD diamond reactor, 1559Synthesis of highly oriented CVD diamond films by ultra short bias

enhanced nucleation step, 1637Diamond electro-mechanical micro devices � technology and

performance, 1684

Ž .Chemical vapour deposition CVDMechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855

Chemical vapour deposition diamondHigh quality CVD diamond for detection applications: structural

characterization, 1788

ChromiumEffect of chromium on the kinetics of the contact melting and the

graphite-to-diamond transformation in the Co�Fe�C system, 1602

Confocal RamanStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

CorrelationsSimilarity in field electron emission from nanocrystalline diamond

and related materials, 1719

Coulomb staircaseNumerical simulation of I�V characteristics of carbon nanotube

based tunneling systems, 1814

Cubic boron nitrideThe introducing of fluorine into the deposition of BN: a

successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868

Depth resolved stress investigations of c-BN thin films, 1875Synthesis and characterization of cubic boron nitride films:

substrate bias and ion flux effects, 1886

Cut-off frequencyPotential applications of surface channel diamond field-effect

transistors, 1743

CVDVibrational sum-frequency observation of synthetic diamonds, 1643Broadband electronics for CVD-diamond detectors, 1765Growth of detector grade CVD diamond films and microscopic

interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783

CVD diamondOptical diagnostics of an atmospheric pressure diamond-depositing

DC plasma reactor, 1565The CVD growth of micro crystals of diamond, 1584Theoretical analysis of ion bombardment roles in the bias-enhanced

nucleation process of CVD diamond, 1622The use of CVD-diamond for heavy-ion detection, 1770

CVD diamond vacuum windowsMPACVD-diamond windows for high-power and long-pulse

millimeter wave transmission, 1692

DC arc plasma jetLarge area high quality diamond film deposition by high power DC

arc plasma jet operating at gas recycling mode, 1551

DefectChange of luminescence character of Ib diamonds with HPHT

treatment, 1665Growth of detector grade CVD diamond films and microscopic

interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783

DefectsStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

DetectorsHigh quality CVD diamond for detection applications: structural

characterization, 1788

DiamondDiamond films grown by a 60-kW microwave plasma chemical vapor

deposition system, 1569Development of single- and multi-layered metallic films on diamond

by ion beam-assisted deposition, 1578Effect of chromium on the kinetics of the contact melting and the

graphite-to-diamond transformation in the Co�Fe�C system, 1602The high temperature�high pressure sintering of diamond�Cu�

Si�B composite, 1607Early stages of the HFCVD process on multi-vicinal silicon

Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612First stages of diamond nucleation on iridium buffer layers, 1617

� � � �The role of methyl radicals and acetylene in 100 vs. 111diamond growth, 1627

� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate depositedon sapphire, 1633

Synthesis of highly oriented CVD diamond films by ultra short biasenhanced nucleation step, 1637

Ž .Cathodoluminescence of phosphorus doped 111 homoepitaxialdiamond thin films, 1652

Analysis of piezoresistive properties of CVD-diamond films onsilicon, 1670

Ž .AFM and XPS studies of a homoepitaxial diamond 001 surfacenitrided using 500-eV N� ion beam, 16762

Diamond electro-mechanical micro devices � technology andperformance, 1684

Field emission properties of diamond and carbon nanotubes, 1709Imaging electron emission from diamond film surfaces: N-doped

diamond vs. nanostructured diamond, 1714Anisotropic etching of a fine column on a single crystal diamond,

1732Potential applications of surface channel diamond field-effect

transistors, 1743The search for donors in diamond, 1749Using ion implantation to dope diamond � an update on selected

issues, 1756Broadband electronics for CVD-diamond detectors, 1765

Diamond coated toolsAdherent diamond coatings on cemented carbide substrates with

different cobalt contents, 1700

Diamond defectsNear-field cathodoluminescence of nanoscopic diamond properties,

1647

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Subject Index of Volume 10�9-10 1941

Diamond filmSelective deposition of diamond films on insulators by selective

seeding with a double-layer mask, 1573

Diamond filmsLaser plasma CVD diamond reactor, 1559Synthesis of nanocrystalline diamond films using microwave plasma

CVD, 1588Growth of nanocrystalline diamond films by biased enhanced

microwave plasma chemical vapor deposition, 1592Similarity in field electron emission from nanocrystalline diamond

and related materials, 1719New directions in structuring and electrochemical applications of

boron-doped diamond thin films, 1799

Diamond sensorCVD diamond sensors for charged particle detection, 1778

Diamond-like carbonEffect of adhesion strength of DLC to steel on the coating erosion

mechanism, 1824Diamond-like carbon by pulsed laser deposition from a camphoric

carbon target: effect of phosphorus incorporation, 1839Diamond-like carbon films in multilayered interference coatings

for IR optical elements, 1846

Ž .Diamond-like carbon DLCWear-resistant multilayered diamond-like carbon coating prepared

by pulse biased arc ion plating, 1850Mechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855

Diamond-like carbon coatingCalculation of the elastic-stressed state under concentrated

loading in diamond-like�metal substrate system, 1829

Diamond-like carbon filmsProperties of diamond-like carbon films on crystalline quartz and

lithium niobate, 1843Mechanical properties of DLC films prepared in acetylene and

methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862

DiffusionEPR and optical imaging of the growth-sector dependence of

radiation-damage defect production in synthetic diamond, 1681

Diffusion barrier layerAdherent diamond coatings on cemented carbide substrates with

different cobalt contents, 1700

DopantThe search for donors in diamond, 1749

DopingUsing ion implantation to dope diamond � an update on selected

issues, 1756

Double-layer maskSelective deposition of diamond films on insulators by selective

seeding with a double-layer mask, 1573

EELSStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

Effective modulusBonding characterization and nano-indentation study of the

amorphous SiC N films with and without hydrogen incorporation,x y

1916

Elastic-stressed stateCalculation of the elastic-stressed state under concentrated

loading in diamond-like�metal substrate system, 1829

Electro-mechanical micro devicesDiamond electro-mechanical micro devices � technology and

performance, 1684

ElectrochemistryRelationships between surface character and electrochemical

processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804

ElectrodesNew directions in structuring and electrochemical applications of

boron-doped diamond thin films, 1799

Electron cyclotron heatingMPACVD-diamond windows for high-power and long-pulse

millimeter wave transmission, 1692

Electron cyclotron resonanceMechanical properties of DLC films prepared in acetylene and

methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862

Ž .Electron cyclotron resonance ECRMechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855

Electron donorThe search for donors in diamond, 1749

Electron emissionImaging electron emission from diamond film surfaces: N-doped

diamond vs. nanostructured diamond, 1714

Electronic propertiesElectronic properties of carbon nanotubes with pentagon�heptagon

pair defects, 1818

Emission propertiesSimilarity in field electron emission from nanocrystalline diamond

and related materials, 1719

Emitter arrayAnisotropic etching of a fine column on a single crystal diamond,

1732

Epitaxial growthŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam

deposition, 1927

Epitaxy� � � �The role of methyl radicals and acetylene in 100 vs. 111

diamond growth, 1627� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited

on sapphire, 1633

Erosion mechanismEffect of adhesion strength of DLC to steel on the coating erosion

mechanism, 1824

Excimer laserTemporal response of UV sensors made of highly oriented diamond

films by 193 and 313 nm laser pulses, 1794

Field emissionField emission properties of diamond and carbon nanotubes, 1709Field emission from metal-containing amorphous carbon composite

films, 1727

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Subject Index of Volume 10�9-101942

CVD diamond for components and emitters, 1736Characteristics of Si�C�N films deposited by microwave plasma

CVD on Si wafers with various buffer layer materials, 1910

Field emission displaysAn under-gate triode structure field emission display with carbon

nanotube emitters, 1705

Field-effect transistorsPotential applications of surface channel diamond field-effect

transistors, 1743

Film structureStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

Filtered cathodic vacuum arcField emission from metal-containing amorphous carbon composite

films, 1727

FluorineThe introducing of fluorine into the deposition of BN: a

successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868

Free standingAnalysis of piezoresistive properties of CVD-diamond films on

silicon, 1670

FrictionMechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855

Gas recyclingLarge area high quality diamond film deposition by high power DC

arc plasma jet operating at gas recycling mode, 1551

Grain sizeGrowth of nanocrystalline diamond films by biased enhanced

microwave plasma chemical vapor deposition, 1592Growth of detector grade CVD diamond films and microscopic

interpretation of their efficiency and charge collection distance inthe normal and pumped states, 1783

Structure analysis of cBN films prepared by DC jet plasma CVDfrom an Ar�N �BF �H gas system, 18812 3 2

GyrotronsMPACVD-diamond windows for high-power and long-pulse

millimeter wave transmission, 1692

Hard materialsMicromechanical and microtribological properties of BCN thin films

near the B C composition deposited by r.f. magnetron4sputtering, 1892

HardnessMechanical properties of a-C:H multilayer films, 1833Bonding characterization and nano-indentation study of the

amorphous SiC N films with and without hydrogen incorporation,x y1916

Heavy-ion timing detectorsThe use of CVD-diamond for heavy-ion detection, 1770

Hetero-epitaxySynthesis of highly oriented CVD diamond films by ultra short bias

enhanced nucleation step, 1637

HeteroepitaxyFirst stages of diamond nucleation on iridium buffer layers, 1617

High power millimeter wavesMPACVD-diamond windows for high-power and long-pulse

millimeter wave transmission, 1692

High pressure�high temperature synthesisThe effect of metal�solvent properties on the alteration of

specific zones on a carbon phase diagram, 1597

Highly oriented diamondTemporal response of UV sensors made of highly oriented diamond

films by 193 and 313 nm laser pulses, 1794

HomoepitaxyŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface

explained by surface tilt, 1655

HPHT diamondChange of luminescence character of Ib diamonds with HPHT

treatment, 1665

Hydrogen terminated surface conductive layerPotential applications of surface channel diamond field-effect

transistors, 1743

Inductively coupled plasma chemical vapour depositionPreparation of nitrogen-rich CN films with inductively coupledx

plasma CVD and pulsed laser deposition, 1901

Ion beamŽ .Epitaxial growth of �-SiC on Si 100 by low energy ion beam

deposition, 1927

Ž .Ion beam-assisted deposition IBADDevelopment of single- and multi-layered metallic films on diamond

by ion beam-assisted deposition, 1578

Ion bombardmentFirst stages of diamond nucleation on iridium buffer layers, 1617Theoretical analysis of ion bombardment roles in the bias-enhanced

nucleation process of CVD diamond, 1622

Ion fluxSynthesis and characterization of cubic boron nitride films:

substrate bias and ion flux effects, 1886

Ion implantationUsing ion implantation to dope diamond � an update on selected

issues, 1756

Ion to deposited atom ratioSynthesis and characterization of cubic boron nitride films:

substrate bias and ion flux effects, 1886

Iridium� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited

on sapphire, 1633

Kinetics� � � �The role of methyl radicals and acetylene in 100 vs. 111

diamond growth, 1627

Large area high quality diamond filmsLarge area high quality diamond film deposition by high power DC

arc plasma jet operating at gas recycling mode, 1551

Large current densityField emission properties of diamond and carbon nanotubes, 1709

LaserLaser plasma CVD diamond reactor, 1559

Magnetron sputteringSynthesis and characterization of cubic boron nitride films:

substrate bias and ion flux effects, 1886Chemical bonding in carbon nitride films studied by X-ray

spectroscopies, 1897

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Subject Index of Volume 10�9-10 1943

Master equationNumerical simulation of I�V characteristics of carbon nanotube

based tunneling systems, 1814

Mechanical propertiesDiamond-like carbon films in multilayered interference coatings

for IR optical elements, 1846Mechanical properties of DLC films prepared in acetylene and

methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862

Mechanism� � � �The role of methyl radicals and acetylene in 100 vs. 111

diamond growth, 1627

MetallizationDevelopment of single- and multi-layered metallic films on diamond

by ion beam-assisted deposition, 1578

Methane and acetylene plasmaMechanical properties of DLC films prepared in acetylene and

methane plasmas using electron cyclotron resonance microwaveplasma chemical vapor deposition, 1862

Micro diamondThe CVD growth of micro crystals of diamond, 1584

Micro-machiningCVD diamond for components and emitters, 1736

MicrostructureSynthesis of nanocrystalline diamond films using microwave plasma

CVD, 1588

MicrowaveDiamond films grown by a 60-kW microwave plasma chemical vapor

deposition system, 1569

ModelCalculation of the elastic-stressed state under concentrated

loading in diamond-like�metal substrate system, 1829

Multi-layer coatingWear-resistant multilayered diamond-like carbon coating prepared

by pulse biased arc ion plating, 1850

N-dopedImaging electron emission from diamond film surfaces: N-doped

diamond vs. nanostructured diamond, 1714

Nano-indentationBonding characterization and nano-indentation study of the

amorphous SiC N films with and without hydrogen incorporation,x y1916

NanotubeNumerical simulation of I�V characteristics of carbon nanotube

based tunneling systems, 1814

NanotubesField emission properties of diamond and carbon nanotubes, 1709

NitridationŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface

nitrided using 500-eV N� ion beam, 16762

NitridesSimilarity in field electron emission from nanocrystalline diamond

and related materials, 1719

NitrogenEPR and optical imaging of the growth-sector dependence of

radiation-damage defect production in synthetic diamond, 1681

Nitrogen impurityChange of luminescence character of Ib diamonds with HPHT

treatment, 1665

Noise figureBroadband electronics for CVD-diamond detectors, 1765

NucleationEarly stages of the HFCVD process on multi-vicinal silicon

Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612First stages of diamond nucleation on iridium buffer layers, 1617Depth resolved stress investigations of c-BN thin films, 1875

Nucleation and growthThe effect of metal�solvent properties on the alteration of

specific zones on a carbon phase diagram, 1597

Off-angleŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface

explained by surface tilt, 1655

Optical diagnosticsOptical diagnostics of an atmospheric pressure diamond-depositing

DC plasma reactor, 1565

Optoelectronic propertiesDiamond-like carbon by pulsed laser deposition from a camphoric

carbon target: effect of phosphorus incorporation, 1839

Particle detectorCVD diamond sensors for charged particle detection, 1778

PhosphorusŽ .Cathodoluminescence of phosphorus doped 111 homoepitaxial

diamond thin films, 1652Diamond-like carbon by pulsed laser deposition from a camphoric

carbon target: effect of phosphorus incorporation, 1839

PhotoluminescenceHigh quality CVD diamond for detection applications: structural

characterization, 1788

PiezoresistivityAnalysis of piezoresistive properties of CVD-diamond films on

silicon, 1670

Pixel detectorCVD diamond sensors for charged particle detection, 1778

PlasmaLaser plasma CVD diamond reactor, 1559

Platinum� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited

on sapphire, 1633

PolishingThe CVD growth of micro crystals of diamond, 1584

Poly-crystallineThe high temperature�high pressure sintering of diamond�Cu�

Si�B composite, 1607

PressureEffect of chromium on the kinetics of the contact melting and the

graphite-to-diamond transformation in the Co�Fe�C system, 1602

Pulse arc ion platingWear-resistant multilayered diamond-like carbon coating prepared

by pulse biased arc ion plating, 1850

Pulsed laser ablationXPS studies of amorphous SiCN thin films prepared by nitrogen

ion-assisted pulsed-laser deposition of SiC target, 1921

Page 6: Subject Index of Volume 10/9-10

Subject Index of Volume 10�9-101944

Pulsed laser depositionDiamond-like carbon by pulsed laser deposition from a camphoric

carbon target: effect of phosphorus incorporation, 1839Preparation of nitrogen-rich CN films with inductively coupledx

plasma CVD and pulsed laser deposition, 1901

Radiation damageCVD diamond sensors for charged particle detection, 1778

Radiation defectsUsing ion implantation to dope diamond � an update on selected

issues, 1756

Radiation-induced defectsEPR and optical imaging of the growth-sector dependence of

radiation-damage defect production in synthetic diamond, 1681

Raman spectraThe introducing of fluorine into the deposition of BN: a

successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868

Raman spectroscopySynthesis of nanocrystalline diamond films using microwave plasma

CVD, 1588High quality CVD diamond for detection applications: structural

characterization, 1788

Rapid thermal processingCarbon nanotube growth by rapid thermal processing, 1810

Reflection high-energy electron diffractionŽ .Unusual RHEED patterns of a homoepitaxial diamond 001 surface

explained by surface tilt, 1655

Sapphire� 4Growth of 111 -oriented diamond on Pt�Ir�Pt substrate deposited

on sapphire, 1633

Scanning electron microscopyNear-field cathodoluminescence of nanoscopic diamond properties,

1647

Selective depositionSelective deposition of diamond films on insulators by selective

seeding with a double-layer mask, 1573

Selective seedingSelective deposition of diamond films on insulators by selective

seeding with a double-layer mask, 1573

Semiconducting diamondRelationships between surface character and electrochemical

processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804

SensorsAnalysis of piezoresistive properties of CVD-diamond films on

silicon, 1670

Sharp tipAnisotropic etching of a fine column on a single crystal diamond,

1732

SiCNXPS studies of amorphous SiCN thin films prepared by nitrogen

ion-assisted pulsed-laser deposition of SiC target, 1921

Silicon carbon nitrideCharacteristics of Si�C�N films deposited by microwave plasma

CVD on Si wafers with various buffer layer materials, 1910Bonding characterization and nano-indentation study of the

amorphous SiC N films with and without hydrogen incorporation,x y

1916

Silicon stepEarly stages of the HFCVD process on multi-vicinal silicon

Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612

Single crystalAnisotropic etching of a fine column on a single crystal diamond,

1732

Single-particle processingBroadband electronics for CVD-diamond detectors, 1765The use of CVD-diamond for heavy-ion detection, 1770

SpectroscopyVibrational sum-frequency observation of synthetic diamonds, 1643Near-field cathodoluminescence of nanoscopic diamond properties,

1647

SteelMechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855

StressThe introducing of fluorine into the deposition of BN: a

successful method to obtain high-quality, thick cBN films with lowresidual stress, 1868

Depth resolved stress investigations of c-BN thin films, 1875

SurfaceVibrational sum-frequency observation of synthetic diamonds, 1643

Surface acoustic waveProperties of diamond-like carbon films on crystalline quartz and

lithium niobate, 1843

Surface terminationRelationships between surface character and electrochemical

processes on diamond electrodes: dual roles of surface terminationand near-surface hydrogen, 1804

Synthetic diamondVibrational sum-frequency observation of synthetic diamonds, 1643EPR and optical imaging of the growth-sector dependence of

radiation-damage defect production in synthetic diamond, 1681

TEMStructure analysis of cBN films prepared by DC jet plasma CVD

from an Ar�N �BF �H gas system, 18812 3 2

TemperatureEffect of chromium on the kinetics of the contact melting and the

graphite-to-diamond transformation in the Co�Fe�C system, 1602

Tetrahedral amorphous carbon filmsProperties of diamond-like carbon films on crystalline quartz and

lithium niobate, 1843

Thermal stabilityDevelopment of single- and multi-layered metallic films on diamond

by ion beam-assisted deposition, 1578

Thin filmsMicromechanical and microtribological properties of BCN thin films

near the B C composition deposited by r.f. magnetron4

sputtering, 1892

Tight binding methodElectronic properties of carbon nanotubes with pentagon�heptagon

pair defects, 1818

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Subject Index of Volume 10�9-10 1945

Topological defectElectronic properties of carbon nanotubes with pentagon�heptagon

pair defects, 1818

Transient photocurrentTemporal response of UV sensors made of highly oriented diamond

films by 193 and 313 nm laser pulses, 1794

Transmission electron microscopyEarly stages of the HFCVD process on multi-vicinal silicon

Ž .surfaces studied by electron microscopy probes SEM, TEM , 1612

Triode structureAn under-gate triode structure field emission display with carbon

nanotube emitters, 1705

Tungsten carbideAdherent diamond coatings on cemented carbide substrates with

different cobalt contents, 1700

TunnelingNumerical simulation of I�V characteristics of carbon nanotube

based tunneling systems, 1814

Twinning� � � �The role of methyl radicals and acetylene in 100 vs. 111

diamond growth, 1627

Ultraviolet sensorTemporal response of UV sensors made of highly oriented diamond

films by 193 and 313 nm laser pulses, 1794

Under-gate structureAn under-gate triode structure field emission display with carbon

nanotube emitters, 1705

WaferDiamond films grown by a 60-kW microwave plasma chemical vapor

deposition system, 1569

WearThe high temperature�high pressure sintering of diamond�Cu�

Si�B composite, 1607Diamond-like carbon films in multilayered interference coatings

for IR optical elements, 1846Mechanical and tribological properties of diamond-like carbon

films prepared on steel by ECR-CVD process, 1855Micromechanical and microtribological properties of BCN thin films

near the B C composition deposited by r.f. magnetron4

sputtering, 1892

X-Ray photoelectron spectroscopyXPS studies of amorphous SiCN thin films prepared by nitrogen

ion-assisted pulsed-laser deposition of SiC target, 1921

Ž .X-Ray photoelectron spectroscopy XPSŽ .AFM and XPS studies of a homoepitaxial diamond 001 surface

nitrided using 500-eV N� ion beam, 16762

X-Ray spectroscopiesChemical bonding in carbon nitride films studied by X-ray

spectroscopies, 1897

Young’s modulusMechanical properties of a-C:H multilayer films, 1833