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The investigation of nitrogen effect on Carbon nanotube growth by ab-initio calculation. 2003.10.11 Hyo-Shin Ahn *,** , T.Y. Kim *,** , S.-C. Lee * , K.-R. Lee * and D.-Y. Kim ** *Future Technology Research Division, KIST **School of Materials Science and Engineering, Seoul Nat’l Univ. - PowerPoint PPT Presentation
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The investigation of nitrogen effect on Carbon nanotube
growth by ab-initio calculation
The investigation of nitrogen effect on Carbon nanotube
growth by ab-initio calculation
2003.10.11Hyo-Shin Ahn*,**, T.Y. Kim*,**, S.-C. Lee*, K.-R. Lee* and D.-Y.
Kim**
*Future Technology Research Division, KIST **School of Materials Science and Engineering, Seoul Nat’l
Univ.
Effect of Nitrogen on CNT growth
Nitrogen incorporation enhances CNT growth drastically that vertically aligned CNT can be fabricated16.7 vol. % C2H2 in NH3, CVD process
Vertically aligned multi-wall CNT of 30~40nm in diameter Very high growth rateChemical Physics Letters, Vol. 372, 603(2003)
What is the role of Nitrogen in CNT growth?
Experimental result
Nitrogen effect: possibility 1Nitrogen effect: possibility 1
Nitrogen effect:Reduction in the strain energy of CNT
Due to the strain energy, growth rate can be retarded.
When nitrogen atoms locate on defect or strained site of carbon network, system energy lowers.
Illustration of the defect stabilization by nitrogenPRB. 59, No. 7, 5162(1999)
Nitrogen effect: Change of growth kinetics
• During the growth, nitrogen will change the growth behavior• No remarkable experimental results of nitrogen effect on CNT growth• We do not even know the exact mechanism of the CNT growth in atomistic scale
Nitrogen effect: possibility 2Nitrogen effect: possibility 2
Method :Computational calculation
Dmol3: commercial package of DFT (density functional theory) Ab-initio calculation
Very accurate calculation results
Strong in energy calculation - energetics
Transition State calculation – growth kinetics
Calculating activation energy for chemical reaction
Dmol3: commercial package of DFT (density functional theory) Ab-initio calculation
Very accurate calculation results
Strong in energy calculation - energetics
Transition State calculation – growth kinetics
Calculating activation energy for chemical reaction
Energetics on CNT wallStrain energy due to curved wall
Conventional design for the calculation: CNT unit cell - Larger radius CNT needs more atoms
Due to the computing power, ab-initio calculation cannot describe real size system.
40nm
Real CNTCalculated strain energy by ab-initio : up to 6Å
Strain energy 1/R2
Cluster design / Curved clusters
By Calculating the energies of curved pieces of graphite (cluster), the energy of CNT with corresponding radius can be calculated
Journal of Computer-Aided Materials Design, 5, 279 (1998)
Cut out Attach Hydrogen
Radius(Å)
E(e
V/a
tom
)
Expanding the scale by cluster design
Cluster design
• Introducing cluster design calculation, the energies of large size CNT can be calculated
Strain energy of CNT 1/R2
~10Å
Bulk design
~35Å
• Over the radius of 35Å strain energy disappears
Energy of flat graphite plate
Nitrogen effect on Strain energy
• Strain energy becomes negligible when radius of CNT is larger than 3~4nm.• Radius of the vertically aligned CNTs is typically 15~20 nm, thus CNT has no strain energy. Strain energy reduction by the Nitrogen incorporation would be negligible.
Growth kineticsTwo kinds of edges
zigzag
Calculation of transition state (activation barrier of reaction) on each step of atom attachment
armchair
Growth on zigzag edge:Rate determining step!
176meV
No barrier
No barrier
160meV
64meV
Armchair and zigzag edge
armchair
zigza
g
As the growth proceeds, the proportion of zigzag edge will increase
Nitrogen incorporation:154meVNitrogen incorporation:152meV
152meV
88meV No barrier
No barrier
154meV
Nitrogen incorporation into zigzag edge
No barrier
No barrier
No barrier
176meV
Pure Carbon: 176meV
No barrier
538meV
Nitrogen incorporation: 176meVNitrogen incorporation: ~153meVSmaller than armchair edge growth
Required energy for reaction
152meV
87meV
179meV
96meV
160meV
64meV
Growth on nitrogen doped armchair
Required energy for reaction Pure Carbon: 160meV / Nitrogen incorporated C: 152meV
No remarkable effect
Growth on nitrogen doped zigzag
333meV
No barrier
No reaction!
When nitrogen locates at the top of the hexagon ring, energy barrier for the growth vanishes
No barrier
No barrier
No barrier
176meV
No barrier
Near the nitrogen incorporated Near the nitrogen incorporated region (top site), region (top site), the activation the activation energy for carbon network energy for carbon network growth disappearsgrowth disappears
No barrier
No barrier
No barrier
No barrier In pure C system:176meV
zigzagzigzag
Growth on nitrogen doped carbon system
Summary – growth kinetics
In pure carbon systemArmchair edge can grow faster, then growth on zigzag edge is rate determining step.
Nitrogen incorporation into zigzag edge-lowers energy barrier-makes the growth rates of zigzag edge similar to that of armchair.
Incorporated nitrogen effect on carbon attachment
Activation energy becomes lower.nitrogen in top site of zigzag edge, makes all energy barriers for the growth disappear.
Nitrogen enhances the growth of zigzag edge.
ConclusionConclusion
Multi-wall CNT with tens of nanometer size has no excess strain energy.
Reducing the strain energy is not a major reason for the enhanced CNT growth by nitrogen incorporation in large CNT.
Nitrogen incorporation significantly affect the growth kinetics by lowering the activation barriers for the growth.
Nitrogen incorporation into armchair edge
160meV 303meV
5455meV137meV
Energy required for the growth : 160meVNo remarkable effect of nitrogen incorporation
No Reaction
64meV
<pure carbon>
C24H12
C54H18
C96H24
C150H30
← Cluster size increases(graphite)
Linear relationshipRelatively small size graphite cluster can reflect whole graphite sheet/CNT
Expanding the scale of calculationExpanding the scale of calculationCalculation by ClusterCalculation by Cluster
Expanding the scale of calculationExpanding the scale of calculationCalculation by ClusterCalculation by Cluster
Journal of Computer-Aided Materials Design, 5, 279 (1998)
C24H12 C54H18
C96H24 C150H30