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「 InGaN 発光の点滅現象の特性」
"The phenomena of photoluminescence blinking in InGaN materials"
物理博士 ミケレット・ルジェロ
准教授、横浜市立大学 大学院ナノシステム科学専攻
InGaN の点滅現象
λ =365 nmλ =405 nm
2 2.5 3
400500600700In
ten s
ity
( a.u
.)
Photon Energy (eV)
:420nm
:460nm:510nm:540nm
Ex 365nm
After few seconds the PL image change structure
2 2.5 3
400500600700
No
rma
lize
d I
nte
nsi
ty (
arb
. u
nits
)
Photon Energy (eV)
発光中心波長狙い:420nm:460nm:510nm:540nm
Ex:365nm
GaN (undoped) 5nmInxGa1-xN 3nm
GaN (undoped) 4μm
Sapphire
Ex: 365nm
Ex: 405nm
Indium Concentration
λext
460nm 510nm 540nm
0 10 20 30 40
0.4
0.6
0.8
1
540nm510nm
460nm
420nmon sapphireEx:365nm
Time (sec)Norm
aliz
ed
Inte
ns i
ty (
arb.
units )
Y0-A1exp(-t/τ1)-A2exp(-t/τ2)
Fitting Model
0 10 20 30 40
Inte
nsity
(arb
.un i
ts)
Time (sec)
400 450 500 5500
5
10
15
Center wavelength of samples
λ(nm)
●: τ 1 ○:τ 2
λ =365 nm
Time characteristics:
Sample 1
Sample 2 Sample 3Sample 4
0 10 20 30 40
0.4
0.6
0.8
1
540nm510nm
460nm
420nmon sapphireEx:365nm
Time (sec)
Yellow Band
There is a steep rise at the beginning
The yellow band peak appears to be steady and unchanged
The first rise shape and timing can be an artifact related to the shutter mechanism.
PL Spectrum
1.5 2 2.5 3 3.5
400500600
700800
photon energy (eV)
wavelength (nm)
Inte
nsi
ty (
arb.
units)
(a) (b)
Yellow band
(a)
0 10 20 30 40
Time (sec)
Inte
nsity
( arb
.units)
Main Peak
(b)
0 10 20 30 40
Time (sec)
Inte
nsi
ty (
arb.
units)
λ =365 nm
Z
E
Z
E
Model concepts
どうして PL 像は変わりますか? - Distortion of the band can induce observable PL intensity variations
Z
どうして PL 像は変わりますか?
E
Z
Z
E
λ =365 nmGaN
GaN
InGaN
E
- Distortion of band due to trapped carriers
- Band overlap is induced, F^2 increase and PL increase
- We are observing the time constant of this deformation process
Blinking mechanism for InGaN QW.
Strain incoherently grown InGaN QWs between GaN barriers causes a strong piezoelectric field of the order of 1 MV/cm to 3 MV/cm.
As a consequence the transition is red–shifted (quantum confined Stark effect, QCSE) and the transition matrix element is reduced.
Exposition “History” was found to be important
Design of ad hoc experiment
A routine of illumination and darkening Intervals
Y0-A1exp(-t/τ1)-A2exp(-t/τ2)
Fitting Model
Systematic analysis of single pixel time profile
Video data(3D file)
Single frames
x
yt(sec)
①Image is decomposed in 6 variables: time, x, y, R, G, B
x
yt t
Inte
nsity
② A single point (x,y) on sample is isolate and its time profile recorded
-190 degree
New dots appears at Low temperatures
まとめ
- We detected intermittency in PL fluorescence in GaN/InGaN sample- We found dependence with Indium concentration, Excitation wavelength, excitation power, temperature- Blinking is not a random process, it is not pure chaos.- We found several domains that show autocorrelation. - There is correlation between distant blinking domain.- Correlation depends on time lag, suggesting space drift
- We found new spatial structures in the crystal that manifest themselves only in the blinking phenomenon.