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THEMIS Instrument CDR 1 UCB, April 19-20, 2004
Boom Electronics Board (BEB)Engineering Peer Review
Apr. 20, 2004Hilary Richard
THEMIS Instrument CDR 2 UCB, April 19-20, 2004
BEB Requirements
Functional Requirements• Spin Plane Booms, for each provide:
– Floating Ground Driver
– “Bias”, “Guard”, “Usher” programmable potentials
– “Braid” programmable, switchable potential
– AC test signal source
• Axial Booms, for each provide:– Floating Ground Driver
– “Bias”, “Guard”, “Usher” programmable potentials
– AC test signal source
THEMIS Instrument CDR 3 UCB, April 19-20, 2004
BEB Requirements, con’t.
Preamp Signal CharacteristicsDC voltage level: ± 60Vdc w.r.t. AGNDAC voltage level: 12 VppAC frequency band: DC – 500kHz
Floating Ground Driver SpecificationsInput: Preamp signal (VSPHERE)Input filter: 300 Hz (3dB)Output voltage level: ± 60Vdc w.r.t. AGNDOutput: References floating ground supply (± 10Vdc)
Bias, Usher, Guard SpecificationReference Input: Preamp signal (VSPHERE)Reference Input filter: 300 Hz (3dB)
Vref ± 40Vdc w.r.t. AGND, where FS DAC == Vref + 40Vdc
DAC resolution: 1 nA (12-bit DAC == 0.65 nA resolution on Bias)DAC accuracy: Opposing booms matched to 0.1%DAC step response: < 10 ms (For information only)
EE PartsSelection / Derating / Radiation / Gen'l. Specs
IAW Themis Product Assurance Implementation Plan (PAIP)
Output voltage level:
THEMIS Instrument CDR 4 UCB, April 19-20, 2004
BEB Analog Electronics
Bias Driver
Vin
+100VA
+10VA
-10VA
-100VA
AGND
Vsphere_Ref
Vout
+100VA
Vrefence ±40VDC
0 - 5V
Floating GND Driver
PreAmpIn
+100VA
+10VFloating
-10VFloating
-100VA
FloatingGND
AGND
VSphere
Vrefence ±40VDC
-10VBus
Power Filter
+10Floating
Floa
tingG
ND
-10Vin
-10Floating
+100Vin
-100V
+100V
-100Vin
+10Vin
AGND
+10FltVin
-10FltVin
+10V
-10V
-100VBus
±60VDC
Vrefence ±40VDCfreq
+100VBus
0 - 5V
0 - 5V
+10FltVout
Guard
+10FltVin
BiasControl
-10VFltVout
Bias
freq
freq
+10VA+10VBus
freq
-10FltVin
freq
-100VA
Guard Driver
Vin
+100VA
+10VA
-10VA
-100VA
AGND
Vsphere_Ref
Vout
Usher Driver
Vin
+100VA
+10VA
-10VA
-100VA
AGND
Vsphere_Ref
VoutUsherControl
FloatGNDfreqPreAmp In
freq
Usher
freq
-10VA
±60VDC12Vpp AC (to 500kHz)
GuardControl
AGND
THEMIS Instrument CDR 5 UCB, April 19-20, 2004
BEB Block Diagram
EFI_
P10V
A
EFI_P100VA
BR AID 1
FV1_P10VA
J 501
D D 26F
1234567891011121314151617181920212223242526
EFI_C LK
SH IELD 3
BEB_H SKP
10M
FV6_GN DFV6_M10VA
J 512
AGN D
U SH ER 5
Analog Mux
+10V
IN
AGN D
-10V
IN
D GN D
+5VD
BIAS
1CU
SHER
1CG
UAR
D1C
BIAS
2CU
SHER
2CG
UAR
D2C
BIAS
3CU
SHER
3CG
UAR
D3C
BIAS
4CU
SHER
4CG
UAR
D4C
VOU
T
Se lec t3Selec t2Selec t1Selec t0
USH
ER6C
USH
ER5C
BIAS
6C
GU
ARD
5C
GU
ARD
6C
BIAS
5C
Se lec t4
Tem
pA
Tem
pB
AC TEST6
P500
123456789
1011121314151617181920212223242526272829303132333435363738394041424344454647484950
1234567891011121314151617181920212223242526272829303132333435363738394041424344454647484950
U SH ER 2 FV4_GN D
SH IELD 2
GU AR D 5
EFI_P10VA
BackPlane
BIAS1U SH ER 1
FVF3_P10VA
EFI_P10VA
BR AID 4
U SH ER 4BR AID 2
t
TH ER MISTOR
GU AR D 3
Front Panel
EFI_M10VA
EFI_M10VA
GU AR D 2
BR AID 1
EFI_P100VA
FV1_M10VA
FV4_P10VA
AC TEST3
BIAS5
J 515
U SH ER 6
BR AID 5
FVF1_M10VA
BIAS2
AC TEST2
GU AR D 1
EFI_P10VA
EFI_
M10
VA
FV5_M10VA
FVF5_M10VA
FVF1_P10VA
VSPH ER E3
J 516
VSPH ER E4
10M
VSPH ER E6
BR AID 3
FV6_P10VA
SH IELD 4
VSPH ER E5
FV2_GN DFV2_M10VA
FV1_GN D
EFI_M100VA
EFI_M100VA
BR AID 6
FV5_P10VA
AC TEST1
FV1_M10VA
FVF6_M10VA
J 513
EFI_P100VA
FV2_P10VA
Same TreatmentChannels 3/4Channels 5/6
Braid Driver
BREF
1_R
ESET
BREF
1_SE
TBR
EF0_
RES
ETBR
EF0_
SET
V3_IN
V1_IN
BSEL
_RES
ETBS
EL_S
ET
BR AID 1
BR AID 2
BR IAD 3
BR AID 4
+100VBus
+10VBus
-10VBus
-100VBus
AGN
D
Brai
dCon
trolU SH ER 3
VSPH ER E1
GU AR D 4
FVF2_M10VA
EFI_C MD
FV5_GN D
J 514
FV3_GN D
SH IELD 6
EFI_D GN D
FV3_P10VA
FV4_M10VA
BIAS4
FVF5_P10VA
EFI_
VP5D
VSPH ER E3
Control Block
C LK
C MD
BIAS1C
U SH ER 1C
GU AR D 1C
BIAS2C
U SH ER 2C
GU AR D 2C
BIAS3CU SH ER 3CGU AR D 3C
BIAS4CU SH ER 4CGU AR D 4C
BIAS5CU SH ER 5CGU AR D 5C
BIAS6CU SH ER 6CGU AR D 6C
+5V
D GN D
AC TEST1AC TEST2AC TEST3AC TEST4AC TEST5AC TEST6
MSE
L0M
SEL1
MSE
L2M
SEL3
BR AID C
+2.5V
MSE
L4
BR EF0_SET
BR EF1_SET
BSEL_SET
BR EF0_R ESET
BR EF1_R ESET
BSEL_R ESET
FVF4_M10VA
BR AID 4
FV1_P10VA
AC TEST5
Channel 1
PreAmp In
+100
VBus
+10FltVin
-10FltVin
-100
VBus
+10V
Bus
-10V
Bus
AGN
D
GuardC ontrol
Bias C ontrol
U s herC ontrol
FloatGN D
Bias
U s her
Guard
+10FltVout
-10VFltVout
FV3_M10VA
AC TEST4
J 502
D D 26F
1234567891011121314151617181920212223242526
FVF2_P10VA
EFI_M100VA
EFI_VP2.5D
AGN D
FV2_P10VA
FVF4_P10VA
BIAS3
GU AR D 6
BR AID 2
FVF6_P10VA
VSPH ER E1
SH IELD 1
VSPH ER E2
J 503
D D 26F
1234567891011121314151617181920212223242526
FVF3_M10VA
SH IELD 5
BR AID 3
EFI_D GN D
EFI_M10VA
FV1_GN D
BIAS6
J 511
Channel 2
PreAmp In
+100
VBus
+10FltVin
-10FltVin
-100
VBus
+10V
Bus
-10V
Bus
AGN
D
GuardC ontrol
Bias C ontrol
U s herC ontrol
FloatGN D
Bias
U s her
Guard
+10FltVout
-10VFltVout
EFI_P100VA
EFI_P10VA
FV2_GN D
EFI_VP5D
FV2_M10VA
THEMIS Instrument CDR 6 UCB, April 19-20, 2004
Braid Bias
+10VA
+10VA
10K
BSEL_RESET
+100VA
+100VBus
10K
10K
10K
10M
V3_IN
-10VA
+10VA
AGND
+10VA
BREF0_SET
+100VA
421D
-100VA
Q1
2N2222A
Q1
2N2222A
+10VBus
-100VBus
+10VA10M
BRAID1
421D
BSEL_SET
BRAID4
BREF0_RESET
BRIAD3
BREF1_SET
10K
10M
V1_IN
10M
BREF1_RESET
Q2
2N2222A
421D
Braid Driver
Vin
+100VA
+10VA
-10VA
-100VA AGND
Vsphere_Ref
Vout
10K
Power Filter
-10Vin
+100Vin
-100V
+100V
-100Vin
+10Vin
AGND
+10V
-10V-10VBus
BraidControl
-10VA
Q2
2N2222A
Q1
2N2222A
10M
-100VA
Q2
2N2222A
BRAID2
1M
THEMIS Instrument CDR 7 UCB, April 19-20, 2004
Preliminary PCB Layout
P500
J511J501 J502 J503
J512 J513 J514 J515 J516
THEMIS Instrument CDR 8 UCB, April 19-20, 2004
BEB ETU
THEMIS Instrument CDR 9 UCB, April 19-20, 2004
BEB ETU
THEMIS Instrument CDR 10 UCB, April 19-20, 2004
BEB Parts Analysis
Parts Stress Analysis• Design meets derating guidelines of GSFC PPL-21
Worst Case Temperature Analysis• Parts meet Temperature Guidelines
– Operating Temperature range: –30C to 85C
– Survival Temperature range: –50C to 125C
• Only one “high” power device (Actel 54SX72)– Operating power dissipation: 63 mW
THEMIS Instrument CDR 11 UCB, April 19-20, 2004
BEB ETU Mass and Power
Power• Estimated worst case power at PDR: 1667mW
– Includes Preamp power of 324mW
• Measured ETU operating power: 790mW– Including Preamp, total = 1114mW
Mass• Estimated mass at PDR: 504g• Measured ETU mass: 426g
THEMIS Instrument CDR 12 UCB, April 19-20, 2004
BEB ETU Test Results
-150.0
-100.0
-50.0
0.0
50.0
100.0
150.0
-150 -100 -50 0 50 100 150
VSphere Input [V]
Flo
ati
ng
Vo
lta
ge
Dri
ve
r O
utp
ut
[V]
DC Response of Floating Ground Driver, FL_GND2
THEMIS Instrument CDR 13 UCB, April 19-20, 2004
BEB ETU Test Results (con’t)
Magnitude Response
0.000
0.200
0.400
0.600
0.800
1.000
1.200
0 500 1000 1500 2000 2500
Frequency [Hz]
Vin/
Vout
[V]
Phase Response
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 500 1000 1500 2000 2500
Frequency [Hz]
Phas
e [D
egre
es]
AC Response of Floating Ground Driver, FL_GND2
THEMIS Instrument CDR 14 UCB, April 19-20, 2004
BEB ETU Test Results (con’t)
DC Response of Bias Driver, BIAS1
-150
-100
-50
0
50
100
150
-150 -100 -50 0 50 100 150
BIAS Driver Output [V]
VS
ph
ere
Inp
ut
[V]
DAC @ midscale DAC @ high level DAC @ low scale
THEMIS Instrument CDR 15 UCB, April 19-20, 2004
BEB ETU Test Results (con’t)
AC Response of Bias Driver, BIAS1Magnitude Response
0.000
0.200
0.400
0.600
0.800
1.000
1.200
0 500 1000 1500 2000 2500
Frequency [Hz]
Vin
/Vo
ut
Phase Response
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 500 1000 1500 2000 2500
Phase [Degrees]
Fre
qu
ency
[H
z]
THEMIS Instrument CDR 16 UCB, April 19-20, 2004
BEB / EFI Subsystem Test
Integrated Testing• Includes:
– BEB, Boom wire, Preamp
– Sensor Boxes with Plasma Simulator (R║C)
– GSE Automated Data Acquisition
• Test Results– DC Tests
– Isolation, Sensor biasing, Usher/Guard Biasing, Braid biasing– DC Gain/Offset
– AC Tests– AC input impedance, Transfer function, Crosstalk, Noise level– Linearity, Slew rate
THEMIS Instrument CDR 17 UCB, April 19-20, 2004
EFI Test/Characterization
Faraday Box
Computer
GPIBI/O
DBraidSurface
Signal Generator
GPIBSignal
PreampBiasUsherGuardBraidFloat+10VFloat-10V
VoutVshield
Sensor
Oscilloscope
GPIBSignal
UsherSurface
PBraidSurface
GSE Data Acquisition
±10VA±100VA+5VD+2.5VD
Test-Signal-Output
Vsphere
Usher
Guard
Braid
AC-Test-Input
Computer I/O
GuardSurface
BEB Channel
Vsphere-InVshield
±10VA±100VA+5VD+2.5VD
BiasUsherGuardBraid
Vsphere-Out
Float+10VFloat-10V
DFB Channel
V-Input
±10VA+5VD+2.5VD
Sensor
THEMIS Instrument CDR 18 UCB, April 19-20, 2004
BEB GSE Data Acquisition
Capabilities:• Supports Automated test of Flight Hardware
• “VME-style” backplane– Accepts BEB and DFB– DCB-simulator implements CDI command
• 16-Channel 16-bit ADC (±100V range)– 6 Vsphere, 2 Braid, 2 Usher, 2 Guard, 2 Flt. Gnd
• Programmable Signal Source w/ – ±60Vdc offset range– 30mV to 15Vpp AC (DC-16kHz)– 1mV to 500mVpp AC (100k – 500kHz)
• LVPS and PCB simulation– Power services programmable on/off
– +5VD, +2.5VD, ±10VA, ±100VA
– Current monitors
THEMIS Instrument CDR 19 UCB, April 19-20, 2004
BEB GSE Data Acquisition
THEMIS Instrument CDR 20 UCB, April 19-20, 2004
BEB Design Status
Completed ETU Design and Fabrication• Characterization w.r.t. DC gain and AC response
– In progress
• Available for testing with Preamp prototypes
EFI Sensor Test Program• GSE Data Acquisition system completed
• Integrated tests with preamps and boom units
Issues• Actel 54SX72 failures, total of 4 out of 7
– 2 failed programming– 2 failed “in circuit”, cause unknown
• TBD
THEMIS Instrument CDR 21 UCB, April 19-20, 2004
BEB Add’l Info
Additional slides included:• Floating ground driver schematic• Bias driver schematic• TBD
THEMIS Instrument CDR 22 UCB, April 19-20, 2004
Floating Ground Driver
1K
5.1V
1N6642
V+10Flt
VSPHERE
3.3K
V-10Flt
V-100
V+100
1K
10n
+
-
AD6482
31
84
0.1u
5.1V
V+10Flt
1n
V-10Flt
51.1K
10K
2N3439
2N5416
47.5K
Floating GND
10K
1N6642
220
Heritage Design• CLUSTER, POLAR, FAST• Minor changes in part selection
THEMIS Instrument CDR 23 UCB, April 19-20, 2004
Bias Driver
Heritage Design• CLUSTER, POLAR, FAST• Minor changes in parts selection and DAC
V+10
2N3439
BIAS
V+10
47p
6.8n
100K
2N3439
VREF+5V
10n
42.2K
42.2K
V+100
J1
JUMPER
1 2
3.3n
2N5416V-10
10K
100K
100K
42.2K
10K
AD5554
VD
D
VR
EFx
RFB
x
IOUTx
AG
ND
x
AG
ND
F
VS
S
DG
ND
VSPHERE
V-10
20K100K
70K2N5416
20pF
1M
V-100
+
-
AD6482
31
84
42.2K
DAC
+
-
AD6482
31
84
+5V
1M