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THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

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Page 1: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 1 UCB, April 19-20, 2004

Boom Electronics Board (BEB)Engineering Peer Review

Apr. 20, 2004Hilary Richard

Page 2: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 2 UCB, April 19-20, 2004

BEB Requirements

Functional Requirements• Spin Plane Booms, for each provide:

– Floating Ground Driver

– “Bias”, “Guard”, “Usher” programmable potentials

– “Braid” programmable, switchable potential

– AC test signal source

• Axial Booms, for each provide:– Floating Ground Driver

– “Bias”, “Guard”, “Usher” programmable potentials

– AC test signal source

Page 3: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 3 UCB, April 19-20, 2004

BEB Requirements, con’t.

Preamp Signal CharacteristicsDC voltage level: ± 60Vdc w.r.t. AGNDAC voltage level: 12 VppAC frequency band: DC – 500kHz

Floating Ground Driver SpecificationsInput: Preamp signal (VSPHERE)Input filter: 300 Hz (3dB)Output voltage level: ± 60Vdc w.r.t. AGNDOutput: References floating ground supply (± 10Vdc)

Bias, Usher, Guard SpecificationReference Input: Preamp signal (VSPHERE)Reference Input filter: 300 Hz (3dB)

Vref ± 40Vdc w.r.t. AGND, where FS DAC == Vref + 40Vdc

DAC resolution: 1 nA (12-bit DAC == 0.65 nA resolution on Bias)DAC accuracy: Opposing booms matched to 0.1%DAC step response: < 10 ms (For information only)

EE PartsSelection / Derating / Radiation / Gen'l. Specs

IAW Themis Product Assurance Implementation Plan (PAIP)

Output voltage level:

Page 4: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 4 UCB, April 19-20, 2004

BEB Analog Electronics

Bias Driver

Vin

+100VA

+10VA

-10VA

-100VA

AGND

Vsphere_Ref

Vout

+100VA

Vrefence ±40VDC

0 - 5V

Floating GND Driver

PreAmpIn

+100VA

+10VFloating

-10VFloating

-100VA

FloatingGND

AGND

VSphere

Vrefence ±40VDC

-10VBus

Power Filter

+10Floating

Floa

tingG

ND

-10Vin

-10Floating

+100Vin

-100V

+100V

-100Vin

+10Vin

AGND

+10FltVin

-10FltVin

+10V

-10V

-100VBus

±60VDC

Vrefence ±40VDCfreq

+100VBus

0 - 5V

0 - 5V

+10FltVout

Guard

+10FltVin

BiasControl

-10VFltVout

Bias

freq

freq

+10VA+10VBus

freq

-10FltVin

freq

-100VA

Guard Driver

Vin

+100VA

+10VA

-10VA

-100VA

AGND

Vsphere_Ref

Vout

Usher Driver

Vin

+100VA

+10VA

-10VA

-100VA

AGND

Vsphere_Ref

VoutUsherControl

FloatGNDfreqPreAmp In

freq

Usher

freq

-10VA

±60VDC12Vpp AC (to 500kHz)

GuardControl

AGND

Page 5: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 5 UCB, April 19-20, 2004

BEB Block Diagram

EFI_

P10V

A

EFI_P100VA

BR AID 1

FV1_P10VA

J 501

D D 26F

1234567891011121314151617181920212223242526

EFI_C LK

SH IELD 3

BEB_H SKP

10M

FV6_GN DFV6_M10VA

J 512

AGN D

U SH ER 5

Analog Mux

+10V

IN

AGN D

-10V

IN

D GN D

+5VD

BIAS

1CU

SHER

1CG

UAR

D1C

BIAS

2CU

SHER

2CG

UAR

D2C

BIAS

3CU

SHER

3CG

UAR

D3C

BIAS

4CU

SHER

4CG

UAR

D4C

VOU

T

Se lec t3Selec t2Selec t1Selec t0

USH

ER6C

USH

ER5C

BIAS

6C

GU

ARD

5C

GU

ARD

6C

BIAS

5C

Se lec t4

Tem

pA

Tem

pB

AC TEST6

P500

123456789

1011121314151617181920212223242526272829303132333435363738394041424344454647484950

1234567891011121314151617181920212223242526272829303132333435363738394041424344454647484950

U SH ER 2 FV4_GN D

SH IELD 2

GU AR D 5

EFI_P10VA

BackPlane

BIAS1U SH ER 1

FVF3_P10VA

EFI_P10VA

BR AID 4

U SH ER 4BR AID 2

t

TH ER MISTOR

GU AR D 3

Front Panel

EFI_M10VA

EFI_M10VA

GU AR D 2

BR AID 1

EFI_P100VA

FV1_M10VA

FV4_P10VA

AC TEST3

BIAS5

J 515

U SH ER 6

BR AID 5

FVF1_M10VA

BIAS2

AC TEST2

GU AR D 1

EFI_P10VA

EFI_

M10

VA

FV5_M10VA

FVF5_M10VA

FVF1_P10VA

VSPH ER E3

J 516

VSPH ER E4

10M

VSPH ER E6

BR AID 3

FV6_P10VA

SH IELD 4

VSPH ER E5

FV2_GN DFV2_M10VA

FV1_GN D

EFI_M100VA

EFI_M100VA

BR AID 6

FV5_P10VA

AC TEST1

FV1_M10VA

FVF6_M10VA

J 513

EFI_P100VA

FV2_P10VA

Same TreatmentChannels 3/4Channels 5/6

Braid Driver

BREF

1_R

ESET

BREF

1_SE

TBR

EF0_

RES

ETBR

EF0_

SET

V3_IN

V1_IN

BSEL

_RES

ETBS

EL_S

ET

BR AID 1

BR AID 2

BR IAD 3

BR AID 4

+100VBus

+10VBus

-10VBus

-100VBus

AGN

D

Brai

dCon

trolU SH ER 3

VSPH ER E1

GU AR D 4

FVF2_M10VA

EFI_C MD

FV5_GN D

J 514

FV3_GN D

SH IELD 6

EFI_D GN D

FV3_P10VA

FV4_M10VA

BIAS4

FVF5_P10VA

EFI_

VP5D

VSPH ER E3

Control Block

C LK

C MD

BIAS1C

U SH ER 1C

GU AR D 1C

BIAS2C

U SH ER 2C

GU AR D 2C

BIAS3CU SH ER 3CGU AR D 3C

BIAS4CU SH ER 4CGU AR D 4C

BIAS5CU SH ER 5CGU AR D 5C

BIAS6CU SH ER 6CGU AR D 6C

+5V

D GN D

AC TEST1AC TEST2AC TEST3AC TEST4AC TEST5AC TEST6

MSE

L0M

SEL1

MSE

L2M

SEL3

BR AID C

+2.5V

MSE

L4

BR EF0_SET

BR EF1_SET

BSEL_SET

BR EF0_R ESET

BR EF1_R ESET

BSEL_R ESET

FVF4_M10VA

BR AID 4

FV1_P10VA

AC TEST5

Channel 1

PreAmp In

+100

VBus

+10FltVin

-10FltVin

-100

VBus

+10V

Bus

-10V

Bus

AGN

D

GuardC ontrol

Bias C ontrol

U s herC ontrol

FloatGN D

Bias

U s her

Guard

+10FltVout

-10VFltVout

FV3_M10VA

AC TEST4

J 502

D D 26F

1234567891011121314151617181920212223242526

FVF2_P10VA

EFI_M100VA

EFI_VP2.5D

AGN D

FV2_P10VA

FVF4_P10VA

BIAS3

GU AR D 6

BR AID 2

FVF6_P10VA

VSPH ER E1

SH IELD 1

VSPH ER E2

J 503

D D 26F

1234567891011121314151617181920212223242526

FVF3_M10VA

SH IELD 5

BR AID 3

EFI_D GN D

EFI_M10VA

FV1_GN D

BIAS6

J 511

Channel 2

PreAmp In

+100

VBus

+10FltVin

-10FltVin

-100

VBus

+10V

Bus

-10V

Bus

AGN

D

GuardC ontrol

Bias C ontrol

U s herC ontrol

FloatGN D

Bias

U s her

Guard

+10FltVout

-10VFltVout

EFI_P100VA

EFI_P10VA

FV2_GN D

EFI_VP5D

FV2_M10VA

Page 6: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 6 UCB, April 19-20, 2004

Braid Bias

+10VA

+10VA

10K

BSEL_RESET

+100VA

+100VBus

10K

10K

10K

10M

V3_IN

-10VA

+10VA

AGND

+10VA

BREF0_SET

+100VA

421D

-100VA

Q1

2N2222A

Q1

2N2222A

+10VBus

-100VBus

+10VA10M

BRAID1

421D

BSEL_SET

BRAID4

BREF0_RESET

BRIAD3

BREF1_SET

10K

10M

V1_IN

10M

BREF1_RESET

Q2

2N2222A

421D

Braid Driver

Vin

+100VA

+10VA

-10VA

-100VA AGND

Vsphere_Ref

Vout

10K

Power Filter

-10Vin

+100Vin

-100V

+100V

-100Vin

+10Vin

AGND

+10V

-10V-10VBus

BraidControl

-10VA

Q2

2N2222A

Q1

2N2222A

10M

-100VA

Q2

2N2222A

BRAID2

1M

Page 7: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 7 UCB, April 19-20, 2004

Preliminary PCB Layout

P500

J511J501 J502 J503

J512 J513 J514 J515 J516

Page 8: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 8 UCB, April 19-20, 2004

BEB ETU

Page 9: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 9 UCB, April 19-20, 2004

BEB ETU

Page 10: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 10 UCB, April 19-20, 2004

BEB Parts Analysis

Parts Stress Analysis• Design meets derating guidelines of GSFC PPL-21

Worst Case Temperature Analysis• Parts meet Temperature Guidelines

– Operating Temperature range: –30C to 85C

– Survival Temperature range: –50C to 125C

• Only one “high” power device (Actel 54SX72)– Operating power dissipation: 63 mW

Page 11: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 11 UCB, April 19-20, 2004

BEB ETU Mass and Power

Power• Estimated worst case power at PDR: 1667mW

– Includes Preamp power of 324mW

• Measured ETU operating power: 790mW– Including Preamp, total = 1114mW

Mass• Estimated mass at PDR: 504g• Measured ETU mass: 426g

Page 12: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 12 UCB, April 19-20, 2004

BEB ETU Test Results

-150.0

-100.0

-50.0

0.0

50.0

100.0

150.0

-150 -100 -50 0 50 100 150

VSphere Input [V]

Flo

ati

ng

Vo

lta

ge

Dri

ve

r O

utp

ut

[V]

DC Response of Floating Ground Driver, FL_GND2

Page 13: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 13 UCB, April 19-20, 2004

BEB ETU Test Results (con’t)

Magnitude Response

0.000

0.200

0.400

0.600

0.800

1.000

1.200

0 500 1000 1500 2000 2500

Frequency [Hz]

Vin/

Vout

[V]

Phase Response

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 500 1000 1500 2000 2500

Frequency [Hz]

Phas

e [D

egre

es]

AC Response of Floating Ground Driver, FL_GND2

Page 14: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 14 UCB, April 19-20, 2004

BEB ETU Test Results (con’t)

DC Response of Bias Driver, BIAS1

-150

-100

-50

0

50

100

150

-150 -100 -50 0 50 100 150

BIAS Driver Output [V]

VS

ph

ere

Inp

ut

[V]

DAC @ midscale DAC @ high level DAC @ low scale

Page 15: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 15 UCB, April 19-20, 2004

BEB ETU Test Results (con’t)

AC Response of Bias Driver, BIAS1Magnitude Response

0.000

0.200

0.400

0.600

0.800

1.000

1.200

0 500 1000 1500 2000 2500

Frequency [Hz]

Vin

/Vo

ut

Phase Response

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 500 1000 1500 2000 2500

Phase [Degrees]

Fre

qu

ency

[H

z]

Page 16: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 16 UCB, April 19-20, 2004

BEB / EFI Subsystem Test

Integrated Testing• Includes:

– BEB, Boom wire, Preamp

– Sensor Boxes with Plasma Simulator (R║C)

– GSE Automated Data Acquisition

• Test Results– DC Tests

– Isolation, Sensor biasing, Usher/Guard Biasing, Braid biasing– DC Gain/Offset

– AC Tests– AC input impedance, Transfer function, Crosstalk, Noise level– Linearity, Slew rate

Page 17: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 17 UCB, April 19-20, 2004

EFI Test/Characterization

Faraday Box

Computer

GPIBI/O

DBraidSurface

Signal Generator

GPIBSignal

PreampBiasUsherGuardBraidFloat+10VFloat-10V

VoutVshield

Sensor

Oscilloscope

GPIBSignal

UsherSurface

PBraidSurface

GSE Data Acquisition

±10VA±100VA+5VD+2.5VD

Test-Signal-Output

Vsphere

Usher

Guard

Braid

AC-Test-Input

Computer I/O

GuardSurface

BEB Channel

Vsphere-InVshield

±10VA±100VA+5VD+2.5VD

BiasUsherGuardBraid

Vsphere-Out

Float+10VFloat-10V

DFB Channel

V-Input

±10VA+5VD+2.5VD

Sensor

Page 18: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 18 UCB, April 19-20, 2004

BEB GSE Data Acquisition

Capabilities:• Supports Automated test of Flight Hardware

• “VME-style” backplane– Accepts BEB and DFB– DCB-simulator implements CDI command

• 16-Channel 16-bit ADC (±100V range)– 6 Vsphere, 2 Braid, 2 Usher, 2 Guard, 2 Flt. Gnd

• Programmable Signal Source w/ – ±60Vdc offset range– 30mV to 15Vpp AC (DC-16kHz)– 1mV to 500mVpp AC (100k – 500kHz)

• LVPS and PCB simulation– Power services programmable on/off

– +5VD, +2.5VD, ±10VA, ±100VA

– Current monitors

Page 19: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 19 UCB, April 19-20, 2004

BEB GSE Data Acquisition

Page 20: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 20 UCB, April 19-20, 2004

BEB Design Status

Completed ETU Design and Fabrication• Characterization w.r.t. DC gain and AC response

– In progress

• Available for testing with Preamp prototypes

EFI Sensor Test Program• GSE Data Acquisition system completed

• Integrated tests with preamps and boom units

Issues• Actel 54SX72 failures, total of 4 out of 7

– 2 failed programming– 2 failed “in circuit”, cause unknown

• TBD

Page 21: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 21 UCB, April 19-20, 2004

BEB Add’l Info

Additional slides included:• Floating ground driver schematic• Bias driver schematic• TBD

Page 22: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 22 UCB, April 19-20, 2004

Floating Ground Driver

1K

5.1V

1N6642

V+10Flt

VSPHERE

3.3K

V-10Flt

V-100

V+100

1K

10n

+

-

AD6482

31

84

0.1u

5.1V

V+10Flt

1n

V-10Flt

51.1K

10K

2N3439

2N5416

47.5K

Floating GND

10K

1N6642

220

Heritage Design• CLUSTER, POLAR, FAST• Minor changes in part selection

Page 23: THEMIS Instrument CDR 1 UCB, April 19-20, 2004 Boom Electronics Board (BEB) Engineering Peer Review Apr. 20, 2004 Hilary Richard

THEMIS Instrument CDR 23 UCB, April 19-20, 2004

Bias Driver

Heritage Design• CLUSTER, POLAR, FAST• Minor changes in parts selection and DAC

V+10

2N3439

BIAS

V+10

47p

6.8n

100K

2N3439

VREF+5V

10n

42.2K

42.2K

V+100

J1

JUMPER

1 2

3.3n

2N5416V-10

10K

100K

100K

42.2K

10K

AD5554

VD

D

VR

EFx

RFB

x

IOUTx

AG

ND

x

AG

ND

F

VS

S

DG

ND

VSPHERE

V-10

20K100K

70K2N5416

20pF

1M

V-100

+

-

AD6482

31

84

42.2K

DAC

+

-

AD6482

31

84

+5V

1M