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Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim. Characteristics of MeV Ion Beam Analysis. Nondestructive Absolute, quantitative High sensitivity Depth profiling in the first micron Light element detection (ERDA, NRA, PIGE) - PowerPoint PPT Presentation
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Korea Institute of Geoscience and Mineral Resources (KIGAM)
1
23年 4月 20日
Thin Film Analysis by Ion Beam
Techniques
W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim
Thin Film Analysis by Ion Beam
Techniques
W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim
Korea Institute of Geoscience and Mineral Resources (KIGAM)
2
23年 4月 20日
Characteristics of MeV Ion Beam Analysis
• Nondestructive
• Absolute, quantitative
• High sensitivity
• Depth profiling in the first micron
• Light element detection (ERDA, NRA, PIGE)
• Ultra high sensitive isotope measurement
• Versatile
• External Beam available
Korea Institute of Geoscience and Mineral Resources (KIGAM)
3
23年 4月 20日
RBS vs TOF-ERDA
Korea Institute of Geoscience and Mineral Resources (KIGAM)
4
23年 4月 20日
Tandem Accelerator in KIGAM
Korea Institute of Geoscience and Mineral Resources (KIGAM)
5
23年 4月 20日
Multipurpose chamber for RBS & TOF-ERD
Korea Institute of Geoscience and Mineral Resources (KIGAM)
6
23年 4月 20日
Rutherford Backscattering Spectrometry (RBS)
21
2
0
221 ,,
2MMf
E
eZZ
d
d
• Semiconductors
• Superconductors
• Optical films
• Material science
Korea Institute of Geoscience and Mineral Resources (KIGAM)
7
23年 4月 20日
BN on Si
TOF-ERDA
21
2
0
221 ,,
2MMf
E
eZZ
d
d
Korea Institute of Geoscience and Mineral Resources (KIGAM)
8
23年 4月 20日
channel
0 200 400 600 800 1000
coun
t
0
200
400
600
800
1000
1200
1400
1600
energy (keV)
0 500 1000 1500 2000 2500 3000
experimentsimulated
O
Si
V Ni
Ar
Electrolytic Li-Ni-V-O(H)/Si (1000 A)
RBS result TOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM)
9
23年 4月 20日
Thick 600 1015 atoms/ cm2 (22.56 g/cm2, ~ 440 A)
Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)
H 69.3 11.5 0.12 0.51 Li 112.6 18.8 1.30 5.75 O 259.7 43.3 6.90 30.59 Ar 2.6 0.43 0.17 0.76 V 86.6 14.4 7.32 32.46 Ni 69.3 11.5 6.75 29.92
Korea Institute of Geoscience and Mineral Resources (KIGAM)
10
23年 4月 20日
Electrolytic Si-P-N-O-Li on Si (2000 A)
RBS result TOF-ERD result
channel100 200 300 400 500 600 700 800 900 1000
Nor
mal
ized
yie
ld
0
200
400
600
800
1000
energy (keV)500 1000 1500 2000 2500 3000
measuredsimulated
P
Pt
Si
ON
Korea Institute of Geoscience and Mineral Resources (KIGAM)
11
23年 4月 20日
Thick 3500 1015 atoms/ cm2 (87.59 g/cm2, ~ 1600 A)
Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)
H 55.8 1.6 0.09 0.11 Li 1283.6 36.7 14.80 16.89 C 27.9 0.8 0.56 0.64 N 725.68 20.7 16.88 19.27 O 725.68 20.7 19.28 22.01 Si 117.22 3.4 5.47 6.24 P 558.21 16.0 28.71 32.77 Pt 5.58 0.2 1.81 2.06
Korea Institute of Geoscience and Mineral Resources (KIGAM)
12
23年 4月 20日
Active layer of TFT and PDP display Ru on Si (300 A)
RBS result TOF-ERD result
channel
0 200 400 600 800 1000
coun
t
0
2000
4000
6000
8000
10000
energy (keV)
0 500 1000 1500 2000 2500 3000
channel vs Exp energy(keV) vs theory
Ru
Si
Korea Institute of Geoscience and Mineral Resources (KIGAM)
13
23年 4月 20日
Thick 270 1015 atoms/ cm2 (42.27 g/cm2, ~ 340 A)
Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)
H 5.0 1.9 0.01 0.02 C 15.0 5.6 0.30 0.71 Ru 250.0 92.6 41.96 99.27
Korea Institute of Geoscience and Mineral Resources (KIGAM)
14
23年 4月 20日
channel
0 200 400 600 800 1000
coun
t
0
2000
4000
6000
8000
10000
energy (keV)
0 500 1000 1500 2000 2500 3000
experimentsimulated
Ru
SiO
Dielectric layer of semiconductor Ru - O on Si (300 A)
RBS result TOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM)
15
23年 4月 20日
• Layer 1 Thick 50 1015 atoms/ cm2 (3.37 g/cm2 , ~ 30 A) Element Areal density Atomic ratio Mass density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)
H 17.9 35.7 0.03 0.88 C 5.4 10.7 0.11 3.17 O 8.9 17.9 0.24 7.04 Ru 17.9 35.7 3.37 88.91
• Layer 2 Thick 150 1015 atoms/ cm2 (19.22 g/cm2 , ~ 160 A) Element Areal density Atomic ratio Mass density Mass ratio (1015 atoms/ cm2) (%) (g/cm2) (%)
H 2.2 1.5 0.00 0.02 C 27.4 18.3 0.55 2.84 O 11.0 7.3 0.29 1.51 Ru 109.5 73.0 18.38 95.63
Korea Institute of Geoscience and Mineral Resources (KIGAM)
16
23年 4月 20日
Neutron generation target Ti-3H on Cu, 3H(p,n)3He
RBS result (before H irradiation)TOF-ERD result
(film composition)
He energy [MeV]0.0 0.5 1.0 1.5 2.0 2.5 3.0
Cou
nts
0
250
500
750
1000
Sim.
Exp.He : 3 MeV
SSBD :147o
Cu
Ti
Korea Institute of Geoscience and Mineral Resources (KIGAM)
17
23年 4月 20日
Accumulated Charge (uC)0 500 1000 1500 2000 2500 3000 3500
Tem
pera
ture
(o C
)
20
30
40
50
60
70
no cooling systemwith cooling system
proton current : 1 uA, energy : 3 MeVtarget : Cu : 1 mm coolant : freon
Temperature variation oftarget with H irradiation
He energy [MeV]0.0 0.5 1.0 1.5 2.0 2.5 3.0
Cou
nts
0
1000
2000
3000
4000
He : 3 MeV
SSBD :147o
Exp.
Sim.
Cu
Ti
Cu
RBS result (after H irradiation)
Korea Institute of Geoscience and Mineral Resources (KIGAM)
18
23年 4月 20日
Areal densityof Ti (atom/cm2)
Areal densityof 3H (atom/cm2)
Before irradiation After irradiationCal. by neutron
cross sectionMaker data
1.4 x 1019
4.6 x 1018
1.3 x 1019
3.8 x 1019
1.28 x 1019 2.5-3.8 x 1018
4.8 x 1018
Korea Institute of Geoscience and Mineral Resources (KIGAM)
19
23年 4月 20日
Conclusion• RBS and TOF-ERD are mutually assistant in analysis from light elements
to heavy elements• Electrolytic films in which composition of light elements is important were
analyzed• It was found that Ru film can be a good dielectric film by introducing
small amount of oxygen• Nitrogen and oxygen were observed in a titanium tritide target and
the results reduced error of neutron cross section measurement• Cu migration during proton irradiation was also observed by RBS
measurement in spite of cooling by freon circulation• Ion beam analysis techniques are very successfully applied to
many fields of thin film studies