Driving Differentiated Solutions with FD-SOI for Demanding MarketsDr. Thomas Morgenstern | SVP and General Manager, GLOBALFOUNDRIES Dresden

We are facing new levels of complexity in our world and in our industry

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2D2D3D3D

Our dimensions of innovation are 3D as well

Differentiated Silicon

Scaling at the Bleeding Edge

System Level Differentiation

FinFET Nanowire Vertical FETEUV

Power Analog Mixed Signal

RF SOI & SiGe

FD-SOI

ASICS

Si Photonics

Embedded Memory

Adv Pkg (2.5/3D)

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Source: Gary Patton, Semi ISS, January 2017

The dimensions of innovation … and today’s focus

Differentiated Silicon

Scaling at the Bleeding Edge

System Level Differentiation

FinFET Nanowire Vertical FETEUVSi Photonics

Embedded Memory

Adv Pkg (2.5/3D)

4

Source: Gary Patton, Semi ISS, January 2017

Power Analog Mixed Signal

RF SOI & SiGe

FD-SOI

ASICS

Welcome to GLOBALFOUNDRIES Fab 1 in Dresden

Former AMD Fab From 180 to 65nm Single product & technology: CPU

From 45 to 28 to 22nm SoCs Multiple products & technologies Focus on Computing &

Communication

Lead site for FDX Tech. Platform Integration of RF, eNVM,

mmWave, etc. for Automotive,IoT, Security, SME

1996 - 2009„More Moore“

> 2017„More thanMoore (andmuch more)“

2010 – 2017Still „More Moore“

Some Facts & FiguresEurope’s largest 300mm fab> 50k m2 clean room> USD 12Bill investment 1996 to 2017> 3 Mio 28nm Wafer shipped> 3,000 employees from 50 nations

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Exciting Growth Markets for Differentiated Silicon

NETWORKSConnect

COMPUTATIONLearn

‘SMART’THINGS

Sense & Act

STORAGERemember

Mobility

$173B(2%)

$450B Devices

Semiconductor content

Wireless Infrastructure

$9B(4%)

$54B Equipment

Semiconductor content

AR/VR

$7B(42%)

$32B Hardware

Semiconductor content

Data Centers

$88B(13%)

$149B Complete platforms

Semiconductor content

Automotive

$61B(10%)

$207B Electronics

Semiconductor content

IoT

$48B(23%)

$708B Endpoints

Semiconductor content

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All TAMs refer to 2022 and CAGRs (in parentheses) to 2017-2022. Data centers assumed to include 50% of storage, routers, and switches, and 100% of servers. Mobility includes only mobile phones, laptops, tablets, and other wireless communications (such as portable radios). Sources: (1) AR/VR: GF estimates from Prescient Strategic Intelligence June 2018 AR/VR system data and Gartner Q1 2018 AR/VR system and semiconductor data. (2) IoT: Gartner Jan and Dec 2017 data. (3) All Others: Average of IHS June 2018 and Gartner July 2018 forecasts.

FDX: The ideal platform for IoT and AI/ML

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Application Tiers

• IoT: ARM™, RISC-V processors for NB-IoT and AI – ML functions• RF: <6GHz connectivity (BLE/15.4, Wi-Fi, Zigbee), cellular (3G, 4G LTE, 5G)• Automotive: ADAS / vision, infotainment, body electronics MCU, radar

Technology Capabilities

• Lower dynamic and leakage power

• Logic: 80% lower total power vs. 40nm; operation down to 0.4V• Memory: 1pA cell standby & 0.28V retention voltage

• High performance RF/LDMOS, mmWave, analog capability (>400GHz) • Body-bias driven power management• eMRAM for non-volatile memory

Value

• Single chip solution, balance of power, performance and cost• Ability to integrate value added solutions• Fab 1, Dresden is offering value added solutions

FDX competitive performance

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At lower cost and process complexity

0,2

0,4

0,6

0,8

1,0

1,2

1,4

PERFORMANCE

0102030405060708090

100

MASK COUNT

FinFET performance & power

Superior Analog/RF Performance on demand

40% fewer masks than 10LPP

66% more development learning cycles

FDX platform differentiation: automotive, RF, mmWave

FDX™ can save at least 50% power consumption for mmWave frequencies.

0,0E+00

5,0E+11

1,0E+12

1,5E+12

2,0E+12

2,5E+12

3,0E+12

3,5E+12

4,0E+12

1,E-02 1,E-01 1,E+00 1,E+01 1,E+02 1,E+03

Fmax

*gm

/I (H

z/V)

I/w (uA/um)

mmWave Performance Comparison

22FDX

FinFET

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Fab 1, Dresden, Germany

22FDX Early Production• 500MHz at 0.4V

• Highest Ft/Fmax for 5G/mmWave

• Lowest power consumption for 5G & 77GHz Radar

12FDX Tech Development• Full node scaling benefit

• Client applications, edge-node AI, AR/VR, 5G, & ADAS

RFmmWave

eNVM

RFmmWaveeMRAM

22FDX®

12FDX™

28nm40 / 55nm

22FDX auto qualified, ready for production

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Dresden, Fab 1 automotive certified

22FDX fully qualified for automotive Grade 2

AEC Q-100; with ambient temp up to 105°C

Prototyping ongoing, automotive production tapeout

22FDX and Arbe Robotics 77GHz high resolution radar chipset

Features high voltage, eNVM auto grade, RF, mmWave

Q1 2018

Q3 2018

ADAS & Autonomous - Enabled by A Full Range of GLOBALFOUNDRIES Technologies

© 2018 GLOBALFOUNDRIES 11

22FDX® - SiGe Long Range RadarDresden / Burlington

CMOS - SiGe - LIDARDresden / Singapore / Burlington

28-22FDX CameraDresden

40nm-22FDX Short Range RadarSingapore / Dresden

Processor

22FDX – ADAS ProcessorDresden

14LPP - Autonomous ProcessorMalta

What perceptions have changed since 2016

• GF’s roadmap strategy is resonating with the industry

• IP availability is richer and more mature

• Designers are embracing FD-SOI as a complementary technology to FinFET

What clients are saying about FD-SOI: then vs. now

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Source: VLSI Research 2016 & 2018; FD-SOI / 22FDX Customer Survey

Performance

Power

RF

Better RF / MXSL integration

Fmax > 350GHz

ULV lo Vdd-Vmin

Body biasing

BB dynamic power

BB: wide range of Vdd corners

RF MM wave

Body biasing oversold

0 20% 40% 60%

2016

2018

Top product reasons to use FD-SOI

Marketplace validation of 22FDX

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>$2B design revenue, with >50 client DWINs around the world

IoT (Wireless,Cellular) 18 6 5 5 2

Industrial/Consumer 7 4 1 2

Auto 3 1 2

Networking (5G, AI/ML, Optical) 10 1 5 3 1

A&D 4 1 3

Cryptocurrency 7 1 1 5

Mobile (AP/WiFi/5G) 1 1

DWINs

22FDX Productization in Fab 1 – Proto Run Rate for Time to Market

Turbo Proto on customer demand

STD Proto w/ different complexity

Split FEOL/BEOL TOOn customer demand

- 0.65 dpml possible on customer demand- Std proto pending on complexity (mask number, device suite) ~0.95 dpml- Monthly shuttle and customer shuttle in 2018- Q4-2018 new modules RF/mmWAVE enabled via TD test chips

22FDX Product Yield Summary

▪ Product yields across a wide range of voltage, die size, and memory and logic content

GLOBALFOUNDRIES Confidential

High product yields confirming good test chip results across application rangeAuto, RF, Network, dense SRAM heavy, w/ and w/o ABB

• Cryptocurrency• ~95% yield

(D0 0.04)• 500MHz@0.4V• Using ABB• Fab 1 C4/SORT

• Cryptocurrency• w/ 144Mb

SRAM HD P110• 89% yield • OSAT SLT

• Cryptocurrency• ~97% Yield, (D0

0.04)• 800MHz@0.8V• OSAT SLT

• Auto MCU• ~84% yield

(D0 0.04)• Fab 1 C4/SORT

Product A Product B Product C Product D

• Mobile/RF <6GHz• Chip functionality

verified at blind-build module level

• OSAT SORT.

Product EIn ramp

• Network Processor

• Chip functional, runs at 800MHz

• OSAT SORT

Product FIn ramp

…

Fab Readiness for 22FDX

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Fab1 delivering rapid production ramp with best-in-class manufacturing control benefits

Rapid capacity ramp

Delivering benchmarkmanufacturingvariability control

FD-SOI is a technology with strong European roots

17© 2018 GLOBALFOUNDRIES

We are advancing European value chains with FD-SOI

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Industry Auto Energy Security Aerospace Logistics

GlobalFoundries’ China strategy

Intensify focus on differentiated offerings for China customers

• Growing demand on 5G connectivity, IoT, auto, AI in China

• 22FDX is power and cost optimized for these high-growth applications

Creating a global and China FDSOI ecosystem to accelerate 22FDX market development

• Enable IP, EDA and design services

• Support unique ecosystem for China design teams

• Continue strong partnership with Chengdu to drive 22FDX market adoption

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We are working with our Chinese partners to extend the success of 22FDX

DresdenDresden ChengduChengdu

DesignServices

EmbeddedSoftware

EDATest

IP

SystemIP

OSAT

Ecosystem partners are here for our FDX

ASIC

Universities

FD-SOI ecosystem growth:

7 47 752016 Q3 2018 Q2 2018 Q4

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Take-away on FD-SOI

• It‘s time has finally come as new markets begin to demand energy efficient, highly performant and cost sensitive solution

• Our FD-SOI platform allows even more differentiation with VAS (RF, mmWave, HV, etc)

• GF Fab 1 Dresden is on its way with 22FDX The Technology is ready

The Fab is ready

The Market is ready

• The value proposition is gaining momentum

… and we are only beginning

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This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.

GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners.

© GLOBALFOUNDRIES Inc. 2018. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.

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