TLC2201, TLC2201A, TLC2201B, TLC2201Y … TLC2201A, TLC2201B, TLC2201Y Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS ... Texas Instruments Incorporated

TLC2201, TLC2201A, TLC2201B, TLC2201Y Advanced LinCMOS LOW-NOISE PRECISION

OPERATIONAL AMPLIFIERS SLOS021A – NOVEMBER 1988 – REVISED AUGUST 1994

Copyright 1994, Texas Instruments Incorporated

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• TLC2201B Is 100 % Tested for Noise:30 nV/√Hz Max at f = 10 Hz12 nV/√Hz Max at f = 1 kHz

• Low Input Offset Voltage . . . 200 µV Max

• Excellent Offset Voltage StabilityWith Temperature . . . 0.5 µV/°C Typ

• Low Input Bias Current1 pA at TA = 25°C

• Fully Specified for Both Single-Supplyand Split-Supply Operation

• Common-Mode Input Voltage RangeIncludes the Negative Rail

description

The TLC2201, TLC2201A, TLC2201B, andTLC2201Y are precision, low-noise operationalamplifiers using Texas Instruments AdvancedLinCMOS process. These devices combine thenoise performance of the lowest-noise JFETamplifiers with the dc precision availablepreviously only in bipolar amplifiers. TheAdvanced LinCMOS process uses silicon-gatetechnology to obtain input offset voltage stabilitywith temperature and time that far exceeds thatobtainable using metal-gate technology. Inaddition, this technology makes possible inputimpedance levels that meet or exceed levelsoffered by top-gate JFET and expensivedielectric-isolated devices.

The combination of excellent dc and noiseperformance with a common-mode input voltagerange that includes the negative rail makes thesedevices an ideal choice for high-impedance,low-level signal conditioning applications in eithersingle-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested underMIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure toESD may result in degradation of the device parametric performance.

AVAILABLE OPTIONS

TV

V max V maxPACKAGED DEVICES

CHIPTA

VIOmaxAT 25°C

Vnmaxf = 10 HzAT 25°C

Vnmaxf = 1 kHzAT 25°C

SMALL OUTLINE

(D)

CHIP CARRIER

(FK)

CERAMICDIP(JG)

PLASTIC DIP(P)

CHIPFORM

(Y)

0°C 200 µV 35 nV/√Hz 15 nV/√Hz TLC2201ACD TLC2201ACPTLC2201Y

0 Cto

200 µV200 µV

35 nV/√Hz30 nV/√Hz


TLC2201ACDTLC2201BCD — —

TLC2201ACPTLC2201BCP TLC2201Y

70°Cµ

500 µV — — TLC2201CD TLC2201CP

–40°C 200 µV 35 nV/√Hz 15 nV/√Hz TLC2201AID TLC2201AIP40 Cto

200 µV200 µV



TLC2201AIDTLC2201BID — —

TLC2201AIPTLC2201BIP —

85°Cµ

500 µV — — TLC2201ID TLC2201IP

–55°C 200 µV 35 nV/√Hz 15 nV/√Hz TLC2201AMD TLC2201AMFK TLC2201AMJG TLC2201AMP55 Cto

C

200 µV200 µV

V



TLC2201AMDTLC2201BMD

TLC2201AMFKTLC2201BMFK

TLC2201AMJGTLC2201BMJG

TLC2201AMPTLC2201BMP —

125°Cµ

500 µV — — TLC2201MD TLC2201MFK TLC2201MJG TLC2201MP

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLC2201BCDR). Chip-form versions are tested at 25°C only.

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.

1 10 100

Vn

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

– n

V/ H

z

f – Frequency – Hz

TYPICAL EQUIVALENTINPUT NOISE VOLTAGE

vsFREQUENCY

60

1 k 10 k

50

40

30

20

10

0

VDD = 5 VRS = 20 ΩTA = 25°C

Hz

Vn

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

TLC2201, TLC2201A, TLC2201B, TLC2201YAdvanced LinCMOS LOW-NOISE PRECISIONOPERATIONAL AMPLIFIERS

SLOS021A – NOVEMBER 1988 – REVISED AUGUST 1994

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

The C-suffix devices are characterized for operation from 0°C to 70°C. The l-suffix devices are characterizedfor operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of –55°C to 125°C.

1

2

3

4

8

7

6

5

NCIN–IN+

VDD–/GND

NCVDD+OUTNC

D, JG, OR P PACKAGE(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NCVDD+NCOUTNC

NCIN–NCIN+NC

FK PACKAGE(TOP VIEW)

NC

NC

NC

NC

NC

NC

NC

NC – No internal connection

DD

–

V

NC

NC

/GN

D




equivalent schematic (each amplifier)

IN +

IN –

Q3 Q6 Q9 Q12 Q14 Q16

Q13 Q15 Q17

Q7 Q8 Q10 Q11

Q2 Q5

Q1 Q4

R1 R2

D1

C1

VDD+

VDD–

OUT

COMPONENT COUNT

Transistors 17TransistorsDiodesR i

171

ResistorsCapacitors

21Capacitors 1




TLC2201Y chip information

This chip, when properly assembled, displays characteristics similar to the TLC2201C. Thermal compressionor ultrasonic bonding may be used on the doped-aluminum bonding path. Chips may be mounted withconductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 × 4 MINIMUM

TJmax = 150°C

TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTEDTO BACK SIDE OF CHIP.

TERMINAL NUMBERS ARE FOR THED, JG, AND P PACKAGES.

+

–OUT

IN–

IN+

VDD+(7)

(2)

(3)(6)

(4)

VDD–

65

77

(2) (3) (4)

(6)(7)(8)

(1)




absolute maximum ratings over operating free-air temperature (unless otherwise noted) †

Supply voltage, VDD+ (see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VDD– (see Note 1) –8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±16 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage, VI (any input) (see Note 1) ±8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature. TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD–.2. Differential voltages are at IN+ with respect to IN –.3. The output can be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C

PACKAGE APOWER RATING ABOVE TA = 25°C

APOWER RATING

APOWER RATING

APOWER RATING

D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIXUNIT

MIN MAX MIN MAX MIN MAXUNIT

Supply voltage, VDD± ±2.3 ±8 ±2.3 ±8 ±2.3 ±8 V

Common-mode input voltage, VIC VDD– VDD+ –2.3 VDD– VDD+ –2.3 VDD– VDD+ –2.3 V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C




electrical characteristics at specified free-air temperature, V DD± = ±5 V (unless otherwise noted)

PARAMETER TEST CONDITIONS TA† TLC2201CUNITPARAMETER TEST CONDITIONS TA†

MIN TYP MAXUNIT

VIO Input offset voltage

V 0 R 50 Ω

25°C 100 500µVVIO Input offset voltage

V 0 R 50 Ω

Full range 600µV

αVIO Temperature coefficient of input offset voltage

V 0 R 50 Ω

Full range 0 5 µV/°CαVIO Temperature coefficient of input offset voltage

V 0 R 50 Ω

Full range 0.5 µV/°C

Input offset voltage long-term drift (see Note 4)VIC = 0 RS = 50 Ω

25°C 0.001 0.005 µV/mo

IIO Input offset current

VIC = 0, RS = 50 Ω25°C 0.5

pAIIO Input offset currentFull range 100

pA

IIB Input bias current25°C 1

pAIIB Input bias currentFull range 100

pA

V C d i l R 50 Ω F ll–5

VVICR Common-mode input voltage range RS = 50 Ω Full range5to VICR p g g S g

2.7

VOM Maximum positive peak output voltage swing

R 10 kΩ

25°C 4.7 4.8VVOM+ Maximum positive peak output voltage swing

RL = 10 kΩFull range 4.7

V

VOM Maximum negative peak output voltage swing

RL = 10 kΩ25°C –4.7 –4.9

VVOM– Maximum negative peak output voltage swingFull range –4.7

V

A L i l diff i l l lifi i

VO = ±4 V RL = 500 kΩ25°C 400 560

V/ VAVD Large-signal differential voltage amplification

VO = ±4 V, RL = 500 kΩFull range 300

V/mVAVD Large-signal differential voltage amplification

VO = ±4 V RL = 10 kΩ25°C 90 100

V/mV


CMRR Common-mode rejection ratioVIC = VICRmin, 25°C 90 115

dBCMRR Common-mode rejection ratioVIC VICRmin,VO = 0, RS = 50 Ω Full range 85

dB

kSVR Supply voltage rejection ratio (∆VDD± /∆VIO) VDD± = ±2 3 V to ±8 V25°C 90 110

dBkSVR Supply voltage rejection ratio (∆VDD± /∆VIO) VDD± = ±2.3 V to ±8 VFull range 85

dB

IDD Supply current VO = 0 No load25°C 1.1 1.5

mAIDD Supply current VO = 0, No loadFull range 1.5

mA

† Full range is 0°C to 70°C.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150 °C extrapolated

to TA = 25 °C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

operating characteristics at specified free-air temperature, V DD± = ±5 V


MIN TYP MAXUNIT

SR Slew rate at unity gainVO = ±2.3 V,C F

RL = 10 kΩ, 25°C 2 2.7V/µsSR Slew rate at unity gain

OCL = 100 pF

LFull range 1.5

V/µs

Vn Equivalent input noise voltagef = 10 Hz 25°C 18

nV/√HzVn Equivalent input noise voltagef = 1 kHz 25°C 8

nV/√Hz

VN(PP) Peak-to-peak equivalent input noise voltagef = 0.1 to 1 Hz 25°C 0.5

µVVN(PP) Peak-to-peak equivalent input noise voltagef = 0.1 to 10 Hz 25°C 0.7

µV

In Equivalent input noise current 25°C 0.6 fA/√Hz

Gain-bandwidth productf = 10 kHz, RL = 10 kΩ,

25°C 1 9 MHzGain-bandwidth product,

CL = 100 pFL ,

25°C 1.9 MHz

φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 48°† Full range is 0°C to 70°C.





PARAMETER TEST CONDITIONS TA†TLC2201AC TLC2201BC

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT


V 0 R 50 Ω

25°C 80 200 80 200µVVIO Input offset voltage

V 0 R 50 Ω

Full range 300 300µV

αVIOTemperature coefficient of input

V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOTemperature coefficient of inputoffset voltage

V 0 R 50 Ω

Full range 0.5 0.5 µV/°C

Input offset voltage long-termdrift (see Note 4) VIC = 0, RS = 50 Ω 25°C 0.001 0.005 0.001 0.005 µV/mo

IIO Input offset current25°C 0.5 0.5

pAIIO Input offset currentFull range 100 100

pA

IIB Input bias current25°C 1 1

pAIIB Input bias currentFull range 100 100

pA

VCommon-mode input voltage

R 50 Ω F ll–5 to –5 to

VVICRCommon-mode input voltagerange

RS = 50 Ω Full range–5 to

2 7–5 to

2 7VVICR range

RS = 50 Ω Full range2.7 2.7

V

VOMMaximum positive peak

R 10 kΩ

25°C 4.7 4.8 4.7 4.8VVOM+

Maximum positive peakoutput voltage swing

RL = 10 kΩFull range 4.7 4.7

V

VOMMaximum negative peak

RL = 10 kΩ25°C –4.7 –4.9 –4.7 –4.9

VVOM–Maximum negative peakoutput voltage swing Full range –4.7 –4.7

V

AL i l diff i l

VO = ±4 V RL = 500 kΩ25°C 400 560 400 560

V/ VAVDLarge-signal differential

VO = ±4 V, RL = 500 kΩFull range 300 300

V/mVAVDLarge signal differential voltage amplification

VO = ±4 V RL = 10 kΩ25°C 90 100 90 100

V/mV


CMRR Common-mode rejection ratioVIC = VICRmin, 25°C 90 115 90 115

dBCMRR Common-mode rejection ratioVIC VICRmin,VO = 0, RS = 50 Ω Full range 85 85

dB

kSVRSupply voltage rejection ratio

VDD± = ±2 3 V to ±8 V25°C 90 110 90 110

dBkSVRSupply voltage rejection ratio(∆VDD± /∆VIO)

VDD± = ±2.3 V to ±8 VFull range 85 85

dB

IDD Supply current VO = 0 No load25°C 1.1 1.5 1.1 1.5

mAIDD Supply current VO = 0, No loadFull range 1.5 1.5

mA




PARAMETER TEST CONDITIONS TA† TLC2201AC TLC2210BCUNITPARAMETER TEST CONDITIONS TA†

MIN TYP MAX MIN TYP MAXUNIT

SR Slew rate at unity gainVO = ±2.3 V, RL = 10 kΩ, 25°C 2 2.7 2 2.7

V/µsSR Slew rate at unity gainVO ±2.3 V, RL 10 kΩ,CL = 100 pF Full range 1.5 1.5

V/µs

VnEquivalent input noise f = 10 Hz 25°C 18 35 18 30

nV/√HzVnEquivalent input noise voltage (see Note 5) f = 1 kHz 25°C 8 15 8 12

nV/√Hz

VN(PP)Peak-to-peak equivalent input f = 0.1 to 1 Hz 25°C 0.5 0.5

µVVN(PP)Peak to peak equivalent inputnoise voltage f = 0.1 to 10 Hz 25°C 0.7 0.7

µV

In Equivalent input noise current 25°C 0.6 0.6 fA/√Hz


25°C 1 9 1 9 MHzGain-bandwidth productf 10 kHz, RL 10 kΩ,CL = 100 pF

25°C 1.9 1.9 MHz

φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 48° 48°† Full range is 0°C to 70°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please

contact the factory. This statement has no bearing on testing or nontesting of other parameters.




electrical characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)


MIN TYP MAXUNIT


V 0 R 50 Ω


V 0 R 50 Ω

Full range 600µV


V 0 R 50 Ω



25°C 0.001 0.005 µV/mo


VIC = 0, RS = 50 Ω25°C 0.5


pA



pA

V C d i l R 50 Ω F ll0


2.7

VOH Maximum high-level output voltage RL = 10 kΩ25°C 4.7 4.8

VVOH Maximum high-level output voltage RL = 10 kΩFull range 4.7

V

VOL Maximum low-level output voltage IO = 025°C 0 50

mVVOL Maximum low-level output voltage IO = 0Full range 50

mV


VO = 1 V to 4 V, 25°C 150 315


VO 1 V to 4 V,RL = 500 kΩ Full range 100

V/mVAVD Large-signal differential voltage amplificationVO = 1 V to 4 V, 25°C 25 55

V/mVVO 1 V to 4 V,RL = 10 kΩ Full range 15



dB

kSVR Supply voltage rejection ratio (∆VDD± /∆VIO) VDD= 4 6 V to 16 V25°C 90 110

dBkSVR Supply voltage rejection ratio (∆VDD± /∆VIO) VDD= 4.6 V to 16 VFull range 85

dB

IDD Supply current VO = 2 5 V No load25°C 1 1.5

mAIDD Supply current VO = 2.5 V, No loadFull range 1.5

mA



operating characteristics at specified free-air temperature, V DD = 5 V


MIN TYP MAXUNIT

SR Slew rate at unity gainVO = 0.5 V to 2.5 V, 25°C 1.8 2.5

V/µsSR Slew rate at unity gainVO 0.5 V to 2.5 V,RL = 10 kΩ, CL = 100 pF Full range 1.3

V/µs



nV/√Hz



µV




CL = 100 pFL ,

25°C 1.8 MHz

φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 45°† Full range is 0°C to 70°C.








V 0 R 50 Ω


V 0 R 50 Ω


αVIOTemperature coefficient of input

V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOp p

offset voltage

V 0 R 50 Ω





pA



pA


R 50 Ω F ll0 to 0 to


RS = 50 Ω Full range0 to2 7

0 to2 7

VVICR rangeRS 50 Ω Full range

2.7 2.7V

VOHMaximum high-level output

RL = 10 kΩ25°C 4.7 4.8 4.7 4.8

VVOHg p

voltageRL = 10 kΩ

Full range 4.7 4.7V

VOLMaximum low-level output

IO = 025°C 0 50 0 50

mVVOLp

voltageIO = 0

Full range 50 50mV

AL i l diff i l

VO = 1 V to 4 V, 25°C 150 315 150 315


O ,RL = 500 kΩ Full range 100 100

V/mVAVDg g

voltage amplification VO = 1 V to 4 V, 25°C 25 55 25 55V/mV



dBCMRR Common-mode rejection ratio IC ICR ,VO = 0, RS = 50 Ω Full range 85 85

dB


VDD = 4 6 V to 16 V25°C 90 110 90 110

dBkSVRpp y g j

(∆VDD± /∆VIO)VDD = 4.6 V to 16 V

Full range 85 85dB

IDD Supply current VO = 2 5 V No load25°C 1 1.5 1 1.5

mAIDD Supply current VO = 2.5 V, No loadFull range 1.5 1.5

mA






SR Sl i iVO 0 5 V to 2 5 V 25°C 1 8 2 5 1 8 2 5

V/SR Slew rate at unity gainVO = 0.5 V to 2.5 V, 25°C 1.8 2.5 1.8 2.5

V/µsSR Slew rate at unity gain O ,RL = 10 kΩ, CL = 100 pF Full range 1.3 1.3

V/µs

VnEquivalent input noise voltage f = 10 Hz 25°C 18 35 18 30

nV/√HzVnq p g

(see Note 5) f = 1 kHz 25°C 8 15 8 12nV/√Hz


µVVN(PP)p q p

noise voltage f = 0.1 to 10 Hz 25°C 0.7 0.7µV


G i b d idth d tf = 10 kHz,R L = 10 kΩ,

25°C 1 8 1 8 MHGain-bandwidth productf = 10 kHz, RL = 10 kΩ,CL = 100 pF

25°C 1.8 1.8 MHzGain bandwidth productCL = 100 pF

25 C 1.8 1.8 MHz

φm Phase margin at unity gain RL = 10 kΩ CL = 100 pF 25°C 45° 45°φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 45° 45°† Full range is 0°C to 70°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please






PARAMETER TEST CONDITIONS TA† TLC2201IUNITPARAMETER TEST CONDITIONS TA†

MIN TYP MAXUNIT


V 0 R 50 Ω


V 0 R 50 Ω

Full range 650µV


V 0 R 50 Ω


V 0 R 50 Ω



25°C 0.001 0.005 µV/mo


VIC = 0, RS = 50 Ω25°C 0.5


pA



pA



2.7


R 10 kΩ



V


RL = 10 kΩ25°C –4.7 –4.9


V


VO = ±4 V RL = 500 kΩ25°C 400 560




VO = ±4 V RL = 10 kΩ25°C 90 100

V/mV




dB



dB



mA

† Full range is –40°C to 85°C.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150 °C extrapolated

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.



MIN TYP MAXUNIT

SR Slew rate at unity gainVO = ±2.3 V, RL = 10 kΩ, 25°C 2 2.7

V/µsSR Slew rate at unity gainVO ±2.3 V,CL = 100 pF Full range 1.4

V/µs



nV/√Hz



µV




CL = 100 pFL ,

25°C 1.9 MHz

φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 48°† Full range is –40°C to 85°C.





PARAMETER TEST CONDITIONS TA†TLC2201AI TLC2210BI

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT


V 0 R 50 Ω


V 0 R 50 Ω


αVIOTemperature coefficient of

V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOp

input offset voltage

V 0 R 50 Ω





pA



pA


R 50 Ω F ll–5 –5


RS = 50 Ω Full range to2

to2

VICR range S g2.7 2.7

VOM+Maximum positive peak

R 10 kΩ

25°C 4.7 4.8 4.7 4.8VVOM+

p poutput voltage swing


V


RL = 10 kΩ25°C –4.7 –4.9 –4.7 –4.9

VVOM–g p

output voltage swing Full range –4.7 –4.7V

AL i l diff i l

VO = ±4 V RL = 500 kΩ25°C 400 560 400 560



V/mVAVDg g

voltage amplificationVO = ±4 V RL = 10 kΩ

25°C 90 100 90 100V/mV



dBCMRR Common-mode rejection ratio IC ICR ,VO = 0, RS = 50 Ω Full range 85 85

dB


VDD ± = ±2 3 V to ±8 V25°C 90 110 90 110

dBkSVRpp y g j

(∆VDD± /∆VIO)VDD ± = ±2.3 V to ±8 V

Full range 85 85dB



mA

† Full range is –40°C to 85°C.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150 °C extrapolated

to TA = 25°C using the Arrhenius equation assuming an activation energy of 0.96 eV.


PARAMETER TEST CONDITIONS TA† TLC2201AI TLC2210BIUNITPARAMETER TEST CONDITIONS TA†


SR Sl i iVO = ±2 3 V 25°C 2 2 7 2 2 7

V/SR Slew rate at unity gainVO = ±2.3 V, 25°C 2 2.7 2 2.7


V/µs


nV/√HzVnq p g



µVVN(PP)p q p



G i b d idth d tf = 10 kHz,R L = 10 kΩ,

25°C 1 9 1 9 MHGain-bandwidth productf = 10 kHz, RL = 10 kΩ,CL = 100 pF

25°C 1.9 1.9 MHzGain bandwidth productCL = 100 pF

25 C 1.9 1.9 MHz

φm Phase margin at unity gain RL = 10 kΩ CL = 100 pF 25°C 48° 48°φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 48° 48°† Full range is –40°C to 85°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please







MIN TYP MAXUNIT


V 0 R 50 Ω


V 0 R 50 Ω

Full range 650µV


V 0 R 50 Ω


V 0 R 50 Ω



25°C 0.001 0.005 µV/mo


VIC = 0, RS = 50 Ω25°C 0.5


pA



pA



2.7



V



mV


VO = 1 V to 4 V, 25°C 150 315







dB



dB



mA

† Full range is –40°C to 85°C.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated




MIN TYP MAXUNIT



V/µs



nV/√Hz



µV




CL = 100 pFL ,

25°C 1.8 MHz









V 0 R 50 Ω

25°C 80 200 80 200µAVIO Input offset voltage

V 0 R 50 Ω

Full range 350 350µA


V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOp

input offset voltage

V 0 R 50 Ω





pA



pA


R 50 Ω F ll0 0


RS = 50 Ω Full range to2

to2

VICR range S g2.7 2.7


RL = 10 kΩ25°C 4.7 4.8 4.7 4.8

VVOHg p

voltageRL = 10 kΩ

Full range 4.7 4.7V


IO = 025°C 0 50 0 50

mVVOLp

voltageIO = 0

Full range 50 50mV

AL i l diff i l

VO = 1 V to 4 V, 25°C 150 315 150 315



V/mVAVDg g

voltage amplification VO = 1 V to 4 V, 25°C 25 55 25 55V/mV



dBCMRR Common-mode rejection ratio IC ICR ,VO = 0, R S = 50 Ω Full range 85 85

dB


VDD = 4 6 V to 16 V25°C 90 110 90 110

dBkSVRpp y g j

(∆VDD± /∆VIO)VDD = 4.6 V to 16 V

Full range 85 85dB

IDD Supply current VO = 2 5 V No load25°C 1 1.5 1 1.5


mA






SR Sl i iVO = 0 5 V to 2 5 V 25°C 1 8 2 5 1 8 2 5

V/SR Slew rate at unity gainVO = 0.5 V to 2.5 V, 25°C 1.8 2.5 1.8 2.5


V/µs


nV/√HzVnq p g



µVVN(PP)p q p




25°C 1 8 1 8 MHzGain-bandwidth product, L ,

CL = 100 pF25°C 1.8 1.8 MHz

φm Phase margin at unity gain RL = 10 kΩ CL = 100 pF 25°C 45° 45°φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 25°C 45° 45°† Full range is –40°C to 85°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please





electrical characteristics at specified free-air temperature, V DD ± = ±5 V (unless otherwise noted)

PARAMETER TEST CONDITIONS TA† TLC2201MUNITPARAMETER TEST CONDITIONS TA†

MIN TYP MAXUNIT


V 0 R 50 Ω


V 0 R 50 Ω

Full range 700µV


V 0 R 50 Ω


V 0 R 50 Ω



25°C 0.001 0.005 µV/mo


VIC = 0, RS = 50 Ω25°C 0.5


pA



pA



2.7


R 10 kΩ



V


RL = 10 kΩ25°C –4.7 –4.9


V


VO = ±4 V RL = 500 kΩ25°C 400 560




VO = ±4 V RL = 10 kΩ25°C 90 100

V/mV




dB



dB



mA





MIN TYP MAXUNIT

SR Slew rate at unity gainVO = ±2.3 V,C F

RL = 10 kΩ, 25°C 2 2.7V/µsSR Slew rate at unity gain

OCL = 100 pF Full range 1.3

V/µs



nV/√Hz



µV




CL = 100 pFL ,

25°C 1.9 MHz

φm Phase margin RL = 10 kΩ, CL = 100 pF 25°C 48°† Full range is –55°C to 125°C.





PARAMETER TEST CONDITIONS TA† TLC2201AM TLC2210BMUNITPARAMETER TEST CONDITIONS TA†



V 0 R 50 Ω


V 0 R 50 Ω



V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOTemperature coefficient ofinput offset voltage

V 0 R 50 Ω


Input offset voltagelong-term drift (see Note 4) VIC = 0, RS = 50 Ω 25°C 0.001 0.005 0.001 0.005 µV/mo



pA



pA

VCommon mode input

R 50 Ω F ll–5 –5

VVICRCommon-mode inputvoltage range

RS = 50 Ω Full range5to

5to VICR voltage range S g

2.7 2.7

VOMMaximum positive peak

R 10 kΩ

25°C 4.7 4.8 4.7 4.8VVOM+

Maximum positive peak output voltage swing


V


RL = 10 kΩ25°C –4.7 –4.9 –4.7 –4.9

VVOM–Maximum negative peakoutput voltage swing Full range –4.7 –4.7

V

AL i l diff i l

VO = ±4 V, 25°C 400 560 400 560


VO ±4 V,RL = 500 kΩ Full range 200 200

V/mVAVDLarge signal differentialvoltage amplification VO = ±4 V, 25°C 90 100 90 100

V/mVVO ±4 V,RL = 10 kΩ Full range 45 45

CMRRCommon-mode rejection VIC = VICRmin, 25°C 90 115 90 115

dBCMRRCommon mode rejectionratio

VIC VICRmin,VO = 0, RS = 50 Ω Full range 85 85

dB

kSVRSupply voltage rejection

VDD ± = ±2 3 V to ±8 V25°C 90 110 90 110

dBkSVRSupply voltage rejectionratio (∆VDD± /∆VIO)

VDD ± = ±2.3 V to ±8 VFull range 85 85

dB



mA

† Full range is –55°C to 125°C.NOTE 4: Typical values are based on the input offset voltage shift observable through 168 hours of operating life test at TA = 150°C extrapolated






PARAMETERTEST

TA† TLC2201AM TLC2201BMUNITPARAMETER CONDITIONS TA†


SR Sl i iVO = ±2 3 V 25°C 2 2 7 2 2 7

V/SR Slew rate at unity gainVO = ±2.3 V,RL = 10 kΩ

25°C 2 2.7 2 2.7V/µsSR Slew rate at unity gain RL = 10 kΩ,

CL = 100 pF Full range 1.3 1.3V/µs


nV/√HzVnEquivalent input noise voltage(see Note 5) f = 1 kHz 25°C 8 15 8 12

nV/√Hz



µV


G i b d id h df = 10 kHz,

25°C 1 9 1 9 MHGain-bandwidth productf 10 kHz,RL = 10 kΩ, 25°C 1.9 1.9 MHzp L ,CL = 100 pF

φm Phase margin at unity gainRL = 10 kΩ,

25°C 48° 48°φm Phase margin at unity gain L ,CL = 100 pF 25°C 48° 48°

† Full range is –55°C to 125°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please







MIN TYP MAXUNIT


V 0 R 50 Ω


V 0 R 50 Ω

Full range 700µV


V 0 R 50 Ω


V 0 R 50 Ω



25°C 0.001 0.005* µV/mo


VIC = 0, RS = 50 Ω25°C 0.5


pA



pA



2.7



V



mV


VO = 1 V to 4 V, 25°C 150 315







dB



dB



mA

∗On products compliant to MIL-STD-883, Class B, this parameter is not production tested.† Full range is –55°C to 125°C.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated




MIN TYP MAXUNIT



V/µs



nV/√Hz

VN(PP)Peak-to-peak equivalent f = 0.1 to 1 Hz 25°C 0.5

µVVN(PP)Peak to peak equivalentinput noise voltage f = 0.1 to 10 Hz 25°C 0.7

µV




CL = 100 pFL ,

25°C 1.8 MHz









V 0 R 50 Ω


V 0 R 50 Ω



V 0 R 50 Ω

Full range 0 5 0 5 µV/°CαVIOTemperature coefficient ofinput offset voltage

V 0 R 50 Ω


Input offset voltagelong-term drift (see Note 4) VIC = 0, RS = 50 Ω 25°C 0.001 0.005 0.001 0.005 µV/mo



pA



pA

VCommon mode input

R 50 Ω F ll0 0

VVICRCommon-mode inputvoltage range

RS = 50 Ω Full range0to

0to VICR voltage range S g

2.7 2.7


RL = 10 kΩ25°C 4.7 4.8 4.7 4.8

VVOHMaximum high level outputvoltage


V


IO = 025°C 0 50 0 50

VVOLMaximum low level outputvoltage

IO = 0Full range 50 50

V

AL i l diff i l

VO = 1 V to 4 V, 25°C 150 315 150 315


VO 1 V to 4 V,RL = 500 kΩ Full range 75 75

V/mVAVDLarge signal differentialvoltage amplification VO = 1 V to 4 V, 25°C 25 55 25 55

V/mVVO 1 V to 4 V,RL = 10 kΩ Full range 10 10

CMRRCommon-mode rejection VIC = VICRmin, 25°C 90 110 90 110

dBCMRRCommon mode rejection ratio

VIC VICRmin,VO = 0, RS = 50 Ω Full range 85 85

dB

kSVRSupply voltage rejection

VDD = 4 6 V to 16 V25°C 90 110 90 110

dBkSVRSupply voltage rejectionratio (∆VDD± /∆VIO)

VDD = 4.6 V to 16 VFull range 85 85

dB

IDD Supply current VO = 2 5 V No load25°C 1.1 1.5 1.1 1.5


mA

† Full range is –55°C to 125°C.NOTE 4: Typical values are based on the input offset voltage shift observable through 168 hours of operating life test at TA = 150°C extrapolated








SR Sl i iVO = 0 5 V to 2 5 V 25°C 1 8 2 5 1 8 2 5

V/SR Slew rate at unity gainVO = 0.5 V to 2.5 V,RL = 10 kΩ

25°C 1.8 2.5 1.8 2.5V/µsSR Slew rate at unity gain RL = 10 kΩ,

CL = 100 pF Full range 1.1 1.1V/µs


nV/√HzVnEquivalent input noise voltage(see Note 5) f = 1 kHz 25°C 8 15 8 12

nV/√Hz



µV


G i b d id h df = 10 kHz,

25°C 1 8 1 8 MHGain-bandwidth productf 10 kHz,RL = 10 kΩ, 25°C 1.8 1.8 MHzp L ,CL = 100 pF

φm Phase margin at unity gainRL = 10 kΩ,

25°C 45° 45°φm Phase margin at unity gain L ,CL = 100 pF 25°C 45° 45°

† Full range is –55°C to 125°C.NOTE 5: This parameter is tested on a sample basis for the TLC2201A and on all devices for the TLC2201B. For other test requirements, please





electrical characteristics at V DD± = ±5 V, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONSTLC2201Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT


V 0 R 50 Ω

100 500 µV


0.001 0.005 µV/mo

IIO Input offset currentVIC = 0, RS = 50 Ω

0.5 pA

IIB Input bias current 1 pA

V C d i l R 50 Ω0

VVICR Common-mode input voltage range RS = 50 Ω0to VICR p g g S

2.7

VOH Maximum high-level output voltage RL = 10 kΩ 4.7 4.8 V

VOL Maximum low-level output voltage IO = 0 0 50 mV

AVD Large-signal differential voltage amplificationVO = 1 V to 4 V, RL = 500 Ω 25 55

V/mVAVD Large-signal differential voltage amplificationVO = 1 V to 4 V, RL = 10 Ω 25 55

V/mV

CMRR Common-mode rejection ratioVIC = VICRmin,VO = 0,

RS = 50 Ω90 110 dB

kSVR Supply voltage rejection ratio (∆VDD± /∆VIO) VDD = 4.6 to 16 V 90 110 dB

IDD Supply current per amplifier VO = 2.5 V, No load 1 1.5 mA

NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolatedto TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

operating characteristics at V DD ± = ± 5 V, TA = 25°C

PARAMETER TEST CONDITIONSTLC2201Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT

SR Positive slew rate at unity gain VO = ±0.5 to 2.5 V, RL = 10 kΩ, CL = 100 pF 1.8 2.5 V/µs

Vn Equivalent input noise voltagef = 10 Hz 18

nV/√HzVn Equivalent input noise voltagef = 1 kHz 8

nV/√Hz

VN(PP)Peak-to-peak equivalent f = 0.1 to 1 Hz 0.5

µVVN(PP)Peak to peak equivalentinput noise voltage f = 0.1 to 10 Hz 0.7

µV

In Equivalent input noise current 0.6 pA/√Hz

Gain-bandwidth product f = 10 kHz, RL = 10 kΩ, CL = 100 pF 1.8 MHz

φm Phase margin at unity gain RL = 10 kΩ, CL = 100 pF 48°




PARAMETER MEASUREMENT INFORMATION

2 kΩ

VDD +

VDD –

VO

20 Ω 20 Ω

–

+

10 kΩ

VDD +

VDD –

VO100 Ω–

+

VI

CL RL(see Note A)

NOTE A: CL includes fixture capacitance.Figure 1. Noise-Voltage Test Circuit

Figure 2. Phase-Margin Test Circuit

VDD +

VDD –

VO–

+

CL RL(see Note A)

VI

VDD +

VDD –

VO–

+

Ground Shield

Picoammeters

NOTE A: CL includes fixture capacitance.

Figure 3. Slew-Rate Test Circuit

Figure 4. Input-Bias and Offset-Current Test Circuit

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

Input bias and offset current

At the picoamp bias current level typical of the TLC2201, TLC2201A, and TLC2201B, accurate measurementof the bias current becomes difficult. Not only does this measurement require a picoammeter, but test socketleakages can easily exceed the actual device bias currents. To measure these small currents, TexasInstruments uses a two-step process. The socket leakage is measured using picoammeters with bias voltagesapplied but with no device in the socket. The device is then inserted in the socket, and a second test measuringboth the socket leakage and the device input bias current is performed. The two measurements are thensubtracted algebraically to determine the bias current of the device.

noise

Texas Instruments offers automated production noise testing to meet individual applications requirements.Noise voltage at f = 10 Hz and f = 1 kHz is 100% tested on every TLC2201B device, while lot sample testingis performed on the TLC2201A. For other noise requirements, please contact the factory.




TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 5

IIB Input bias currentvs Common-mode voltage 6

IIB Input bias currentvs Common mode voltagevs Free-air temperature

67

CMRR Common-mode rejection ratio vs Frequency 8

VOM Maximum peak output voltagevs Output current 9

VOM Maximum peak output voltagevs Output currentvs Free-air temperature

910

VO(PP) Maximum peak-to-peak output voltage vs Frequency 11

V Hi h l l lvs Frequency 12

VOH High-level output voltagevs Frequencyvs High-level output current

1213OH g p g g p

vs Free-air temperature 14

VOL Low-level output voltagevs Low-level output current 15

VOL Low-level output voltagevs Low level output currentvs Free-air temperature

1516

AVD Large-signal differential voltage amplificationvs Frequency 17

AVD Large-signal differential voltage amplificationvs Frequencyvs Free-air temperature

1718

IOS Short-circuit output currentvs Supply voltage 19

IOS Short-circuit output currentvs Supply voltagevs Free-air temperature

1920

IDD Supply currentvs Supply voltage 21

IDD Supply currentvs Supply voltagevs Free-air temperature

2122

SR Slew ratevs Supply voltage 23

SR Slew ratevs Supply voltagevs Free-air temperature

2324

Pulse responseSmall signal 25, 26

Pulse responseSmall signalLarge signal

25, 2627, 28

VN(PP) Peak-to-peak equivalent input noise voltage0.1 to 1 Hz 29

VN(PP) Peak-to-peak equivalent input noise voltage0.1 to 1 Hz0.1 to 10 Hz

2930

Gain-bandwidth productvs Supply voltage 31

Gain-bandwidth productvs Supply voltagevs Free-air temperature

3132

φm Phase marginvs Supply voltage 33φm Phase marginvs Supply voltagevs Free-air temperature

3334

Phase shift vs Frequency 17




TYPICAL CHARACTERISTICS †

–500 –300 –100 –5

VIO – Input Offset Voltage – µV

12

8

4

0100

Per

cent

age

of U

nits

– %

16

20

300 500

DISTRIBUTION OF TLC2201INPUT OFFSET VOLTAGE

0

8

IIB –

Inpu

t Bia

s C

urre

nt –

pA

4

2

6

INPUT BIAS CURRENTvs

COMMON-MODE INPUT VOLTAGE10

–2

–4

–6

–8

–10

408 Units Tested From 2 Wafer LotsVDD± = ±5 VTA = 25°CP Package

–4 –3 –2 –1 0 1 2 3 4 5

VIC – Common-Mode Input Voltage – V

I IB

VDD± = ±5 VTA = 25°C

Figure 5 Figure 6

150

100

50

025 45 65 85

200

250

300

105 125

INPUT BIAS CURRENTvs

FREE-AIR TEMPERATURE

IIB –

Inpu

t Bia

s C

urre

nt –

pA

I IB

TA – Free-Air Temperature – °C

60

40

20

010 100 1 k 10 k

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B

80

100

120

100 k 1 M

COMMON-MODE REJECTION RATIOvs

FREQUENCY


VDD± = ±5 VVO = 0VIC = 0

TA = 25°C

VDD± = ±5 V

VDD = 5 V

Figure 7 Figure 8

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





4

3

2

1

00 2 4 6

VO

M |

– M

axim

um P

eak

Out

put V

olta

ge –

V

4

5

8 10

|VO

M

MAXIMUM PEAK OUTPUT VOLTAGEvs

OUTPUT CURRENT

|IO| – Output Current – mA

VOM–

VDD± = ±5 VTA = 25°C

VOM+

MAXIMUM PEAK OUTPUT VOLTAGEvs


TA – Free-Air Temperature – °CV

OM

– M

axim

um P

eak

Out

put V

olta

ge –

VV

OM

VDD± = ±5 VRL = 10 kΩ

6

2

0

–2

–4

–6–75 –50 –25 0 25 50 75 100 125

VOM–

VOM+

Figure 9 Figure 10

2

0

10

10 k 100 k 1 M

V(O

PP

) –

Max

imum

Pea

k-to

-Pea

k O

utpu

t Vol

tage

– V


8

6

4

VO

(PP

)

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

VDD± = ±5 VRL = 10 kΩ

TA = –55°C

TA = 125°C

1

0

5

10 k 100 k 1 M

V0H

– H

igh-

Leve

l Out

put V

olta

ge –

V


4

3

2

HIGH-LEVEL OUTPUT VOLTAGEvs

FREQUENCY

VDD = 5 VRL = 10 kΩ

TA = –55°C

VO

H

TA = 125°C

Figure 11 Figure 12






0 1 2 3 4 5

1

2

5


6

4

3

0–75 –50 –25 0 25 50 75 100 125




VDD = 5 VRL = 10 kΩ

VDD –6

VO

M –

Hig

h-Le

vel O

utpu

t Vol

tage

– V

VO

H

VDD –8

VDD –10

VDD –12

VDD –14

VDD –16

VDD

VDD –2

VDD –4

VO

M –

Hig

h-Le

vel O

utpu

t Vol

tage

– V

VO

HIOH – High-Level Output Current – mA

VDD = 5 V

VDD = 10 V

VDD = 16 V

TA = 25°C


HIGH-LEVEL OUTPUT CURRENT

Figure 13 Figure 14

–75 –50 –25 0 25 50 75 100 125

VO

L –

Low

-Lev

el O

utpu

t Vol

tage

– V

1.5

1

0.5

00 2 4 6

2

8 10

TA = 25°C

IOL – Low-Level Output Current – mA

V OL

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

VO

L –

Low

-Lev

el O

utpu

t Vol

tage

– V

1

0.5

0

1.5


V OL

VDD = 5 V

LOW-LEVEL OUTPUT VOLTAGEvs


IOL = 5 mA

IOL = 1 mA

VDD = 5 V

VDD = 10 V

VDD = 16 V1.25

0.75

0.25

Figure 15 Figure 16






LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION

vsFREE-AIR TEMPERATURE

10 100 1 k 10 k


LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

100 k 1 M–20

0

20

40

60

80

100

120

170°

150°

130°

110°

90°

70°

50°

30°

–75 –50 –25 0 25 50 75 100 12580

90

100

110

120

130

Pha

se S

hift


VDD± = ±5 V, RL = 500 kΩ

VDD = 5 V, RL = 500 kΩ

VDD± = ±5 V, RL = 10 kΩ

VDD = 5 V, RL = 10 kΩ

AVD

Phase Shift

VDD± = ±5 VRL = 10 kΩCL = 100 pFTA = 25°C

AV

D –

Lar

ge-S

igna

l Diff

eren

tial V

olta

ge A

mpl

ifica

tion

– dB

VD

A AV

D –

Lar

ge-S

igna

l Diff

eren

tial V

olta

ge A

mpl

ifica

tion

– dB

VD

A

Figure 17 Figure 18

–15

SHORT-CIRCUIT OUTPUT CURRENTvs


–75 –50 –25 0 25 50 75 100 1250 1 2 3 4 5 6 7 8–12

–8

–4

0

4

8

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

AO

SI

|VDD±| – Supply Voltage – V

12

–10

–5

0

5

10

15


SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE

VID = 100 mV

VID = –100 mV

VID = –100 mV

VID = 100 mV

VO = 0TA= 25°C

VDD± = ±5 VVO = 0

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

AO

SI

Figure 19 Figure 20






0 1 2 3 4 5 6 7 80

0.2

0.4

0.6

0.8

1

IDD

– S

uppl

y C

urre

nt –

mA

DD

I

1.2

SUPPLY CURRENTvs

SUPPLY VOLTAGE

1.4

–75 –50 –25 0 25 50 75 100 1250

0.2

0.4

0.6

0.8

1

1.2


IDD

– S

uppl

y C

urre

nt –

mA

DD

I

SUPPLY CURRENTvs


VO = 0No Load

VO = VDD+/2No Load

VDD = 5 VTA = 25°C

TA = –55°C

TA = 125°C

VDD± = ±5 V


Figure 21 Figure 22

µs

SR

– S

lew

Rat

e –

V/

2

1

00 1 2 3 4 5

3

4

6 7 8

SLEW RATEvs

SUPPLY VOLTAGE


µs

SR

– S

lew

Rat

e –

V/

–75 –50 –25 0 25 50 75 100 1250

1

2

3


SLEW RATE vs


RL = 10 kΩCL = 100 pFTA = 25°C

VDD± = ±5 VRL = 10 kΩCL = 100 pF

SR +

SR –

4SR –

SR +

0.5

1.5

2.5

3.5

0.5

1.5

2.5

3.5

Figure 23 Figure 24





TYPICAL CHARACTERISTICS

VOLTAGE-FOLLOWERSMALL-SIGNAL

PULSE RESPONSE

VOLTAGE-FOLLOWERSMALL-SIGNAL

PULSE RESPONSE

VO

– O

utpu

t Vol

tage

– m

V

0

0 1 2 3

25

75

100

4 5 6 7

50

t – Time – µs

VO

80

60

20

0

160

40

0 1 2 3

120

100

140

4 5 6 7V

O –

Out

put V

olta

ge –

mV

VO

t – Time – µs


VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°C

–25

–50

–75

–100 –20

Figure 25 Figure 26

VOLTAGE-FOLLOWERLARGE-SIGNAL

PULSE RESPONSE

0

4

0 5 10 15 20

2

1

3

5

25 30 35 40

VO

– O

utpu

t Vol

tage

– m

VV

O

t – Time – µs

2

1

0

–10 5 10 15 20

3

4

5

25 30 35 40

VO

– O

utpu

t Vol

tage

– m

VV

O

t – Time – µs

VOLTAGE-FOLLOWERLARGE-SIGNAL

PULSE RESPONSE


VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°C

–1

–2

–3

–4

–5

Figure 27 Figure 28





PEAK-TO-PEAK EQUIVALENTINPUT NOISE VOLTAGE

0.1 TO 1 Hz

0

0.25

–10 1 2 3 4 5 6

0.25

0.75

t – Time – s

1

7 8 9 10

0.5

0

–1

0.8

0 1 2 3 4 5 6

0.4

0.2

0.6

t – Time – s

1

7 8 9 10

PEAK-TO-PEAK EQUIVALENTINPUT NOISE VOLTAGE

0.1 TO 10 Hz

VDD± = ±5 VTA = 25°C

VDD± = ±5 VTA = 25°C

–0.5

–0.75

–0.2

–0.4

–0.6

–0.8

VN

(PP

) –

Pea

k-to

-Pea

k E

quiv

alen

t Inp

ut N

oise

Vol

tage

– u

VN

(PP

)V

Vµ

VN

(PP

) –

Pea

k-to

-Pea

k E

quiv

alen

t Inp

ut N

oise

Vol

tage

– u

VN

(PP

)V

Vµ

Figure 29 Figure 30

–75 –50 –25 0 25 50 75 100 1251

1.5

2

2.5


Gai

n-B

andw

idth

Pro

duct

– M

Hz

GAIN-BANDWIDTH PRODUCTvs


1.9

1.80 1 2 3 4 5

Gai

n-B

andw

idth

Pro

duct

– M

Hz

2

2.1

6 7 8|VDD±| – Supply Voltage – V

GAIN-BANDWIDTH PRODUCTvs

SUPPLY VOLTAGE

RL = 10 kΩCL = 100 pFTA = 25°C

RL = 10 kΩCL = 100 pF

VDD± = ±5 V

VDD= 5 V

Figure 31 Figure 32






–75 –50 –25 0 25 50 75 100 125


PHASE MARGINvs


0 1 2 3 4 5 6 7 8|VDD±| – Supply Voltage – V

PHASE MARGINvs

SUPPLY VOLTAGE

VDD± = ±5 V

VDD = 5 V

RL = 10 kΩCL = 100 pF

RL = 10 kΩCL = 100 pFTA = 25°C

om –

Pha

se M

argi

n φ m

50°

48°

46°

44°

42°

40°

50°

48°

46°

44°

42°

40°om

– P

hase

Mar

gin

φ m

Figure 33 Figure 34


APPLICATION INFORMATION

latch-up avoidance

Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC2201,TLC2201A, and TLC2201B inputs and outputs are designed to withstand –100-mA surge currents withoutsustaining latch-up; however, techniques reducing the chance of latch-up should be used whenever possible.Internal protection diodes should not be forward biased in normal operation. Applied input and output voltagesshould not exceed the supply voltage by more than 300 mV. Care should be exercised when using capacitivecoupling on pulse generators. Supply transients should be shunted by the use of decoupling capacitors(0.1 µF typical) located across the supply rails as close to the device as possible.

electrostatic discharge protection

These devices use internal ESD-protection circuits that prevent functional failures at voltages at or below2000 V. Care should be exercised in handling these devices, as exposure to ESD may result in degradation ofthe device parametric performance.

IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable atthe time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques areutilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of eachdevice is not necessarily performed, except those mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, orsevere property or environmental damage (“Critical Applications”).

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTEDTO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TIproducts in such applications requires the written approval of an appropriate TI officer. Questions concerningpotential risk applications should be directed to TI through a local SC sales office.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards should be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance, orinfringement of patents or services described herein. Nor does TI warrant or represent that any license, eitherexpress or implied, is granted under any patent right, copyright, mask work right, or other intellectual propertyright of TI covering or relating to any combination, machine, or process in which such semiconductor productsor services might be or are used.

Copyright 1995, Texas Instruments Incorporated

Documents

TLC2201, TLC2201A, TLC2201B, TLC2201Y … TLC2201A, TLC2201B, TLC2201Y Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS ... Texas Instruments Incorporated