tle2072, tle2072a, tle2072y excalibur low-noise high-speed jfet

TLE2072, TLE2072A, TLE2072Y EXCALIBUR LOW-NOISE HIGH-SPEED

JFET-INPUT DUAL OPERATIONAL AMPLIFIERS SLOS124A – JUNE 1993 – REVISED AUGUST 1994

Copyright 1994, Texas Instruments Incorporated

5–1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• 40-V/µs Slew Rate Typ

• Low Noise17 nV/√Hz Max at f = 10 kHz11.6 nV/√Hz Typ at f = 10 kHz

• High Gain-Bandwidth Produc t . . . 10 MHz

• ±30-mA Minimum Short-Circuit OutputCurrent

• Wide Supply Rang e . . . ± ± • Input Range Includes the Positive Supply

• Macromodel Included

• Fast Settling Time Using 10-V Step400 ns to 10 mV Typ1.5 µs to 1 mV Typ

Vn

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

–

40

5

25

15

0

50

30

10 100 1 k 10 k

45

10

20

f – Frequency – Hz

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

35

nV

nV/

Hz VCC± = ±15 V

TA – Free-Air Temperature – °C

10

9

8

7– 75 – 55 – 35 –15 5 25 45

Gai

n-B

andw

idth

Pro

duct

– M

Hz

11

12

GAIN-BANDWIDTH PRODUCTvs

FREE-AIR TEMPERATURE

13

65 85 105 125

f = 100 kHzVIC = 0VO = 0RL = 2 kΩCL = 100 pF

VCC± = ±15 V

VCC± = ±5 V

VIC = 0RS = 20 ΩTA = 25°C

description

The TLE2072 and TLE2072A are low-noise, high-performance, internally compensated JFET-input dualoperational amplifiers built using Texas Instruments complementary bipolar Excalibur process. These devicescombine low noise with outstanding output drive capability, high slew rate, and wide bandwidth.

AVAILABLE OPTIONS

TV

PACKAGED DEVICESCHIP

TAVIOmaxAT 25°C

SMALLOUTLINE

(D)

CHIPCARRIER

(FK)

CERAMICDIP(JG)

PLASTICDIP(P)

CHIPFORM

(Y)

0°C to 70°C 3.5 mV TLE2072ACD— —

TLE2072ACP —0°C to 70°C 3.5 mV

6 mVTLE2072ACDTLE2072CD

— —TLE2072ACPTLE2072CP TLE2072Y

–40°C to 85°C 3.5 mV TLE2072AID— —

TLE2072AIP—–40°C to 85°C 3.5 mV

6 mVTLE2072AIDTLE2072ID

— —TLE2072AIPTLE2072IP

—

–55°C to 125°C3.5 mV

—TLE2072AMFK TLE2072AMJG

— —–55°C to 125°C 6 mV — TLE2072MFK TLE2072MJG — —

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2072ACDR). Chip-form versionsare tested at TA = 25°C. For chip-form orders, contact your local TI sales office.

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

On products compliant to MIL-STD-883, Class B, all parameters aretested unless otherwise noted. On all other products, productionprocessing does not necessarily include testing of all parameters.

TLE2072, TLE2072A, TLE2072YEXCALIBUR LOW-NOISE HIGH-SPEEDJFET-INPUT DUAL OPERATIONAL AMPLIFIERS

SLOS124A – JUNE 1993 – REVISED AUGUST 1994

5–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

The design features a 28-V/µs minimum slew rate, which results in a high-power bandwidth. A low audio-bandnoise of 28 nV/√Hz is typical with a 55 nV/√Hz maximum at 10 Hz. Settling time to 0.1% of a 10-V step(1-kΩ/100-pF load) is approximately 400 ns. Gain-bandwidth product is typically 10 MHz with an 8 MHzminimum. As such, the TLE2072 and TLE2072A offer significant speed and noise advantages at a low 1.5-mAtypical supply current per channel.

The input current characteristics traditionally associated with JFET-input amplifiers have been maintained. Inputoffset voltage is graded to a 6 mV and 3.5 mV maximum for the TLE2072 and TLE2072A, respectively. Typically,temperature coefficient of input offset voltage is 2.4 µV/°C and typical CMRR and kSVR are 98 dB and 99 dB,respectively. Device performance is relatively independent of supply voltage over the wide ±2.25-V to ±19-Vrange. The input common-mode voltage range extends from the positive supply down to VCC– + 4 V withoutsignificant degradation to dynamic performance. Maximum peak output voltage swing is from VCC+ – 1 V toVCC– + 1 V under light current loading conditions. The output is capable of sourcing and sinking currents to atleast 30 mA and can sustain shorts to either supply. Care must be taken to ensure that maximum powerdissipation is not exceeded.

Both the TLE2072 and TLE2072A are available in a wide variety of packages, including both theindustry-standard 8-pin small-outline version and chip form for high-density system applications. The C-suffixdevices are characterized for operation from 0°C to 70°C, the I-suffix devices over the –40°C to 85°C range,and the M-suffix devices over the full military temperature range of –55°C to 125°C.

1

2

3

4

8

7

6

5

1OUT1IN–1IN +VCC–

VCC+2OUT2IN–2IN+

D, JG, OR P PACKAGE(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC2OUTNC2IN–NC

NC1IN–

NC1IN+

NC

FK PACKAGE(TOP VIEW)

NC

1OU

TN

C

NC

NC

NC

VN

C

NC – No internal connection

2IN

+

CC

–

VC

C +

symbol

+

–OUT

IN+

IN–

TLE2072, TLE2072A, TLE2072YEXCALIBUR LOW-NOISE HIGH-SPEED

JFET-INPUT DUAL OPERATIONAL AMPLIFIERSSLOS124A – JUNE 1993 – REVISED AUGUST 1994


TLE2072Y chip information

This chip, when properly assembled, displays characteristics similar to the TLE2072. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 × 4 MINIMUM

TJmax = 150°C

TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF THE CHIP.

+

–1OUT

1IN+

1IN–

VCC+

(4)

(6)

(3)

(2)

(5)

(1)

(7)

(8)

–

+

2OUT2IN+

2IN–

VCC–

80

90

(1)

(2)

(3)(4)

(5)

(6)

(7)(8)

TLE2072, TLE2072A, TLE2072YEXCALIBUR LOW-NOISE HIGH-SPEEDJFET-INPUT DUAL OPERATIONAL AMPLIFIERSSLOS124A – JUNE 1993 – REVISED AUGUST 1994

5–4 POST OFFICE BOX 655303 DALLAS, TEXAS 75265•

equi

vale

nt s

chem

atic

(ea

ch c

hann

el)

Q1

IN–

IN+

Q2

D1

Q7

Q5

Q6

Q9

Q10

C2R

4

Q14

Q4

Q3

R1

Q8

R2

Q11 R3

C1 Q

12

D2

Q13

Q15

Q16

Q19Q

20

Q17

R6

VC

C–

VC

C+

R8

C3

Q18

R7

R5

C4

Q21

C5 R

9R

10

Q22

Q26

Q27

Q31

R14

Q29

C6

Q25

Q30

R11

Q23

Q28

Q24

D3

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13

R12

AC

TU

AL

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57 37 5 11




absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

Supply voltage, VCC+ (see Note 1) 19 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VCC– (see Note 1) –19 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage range, VID (see Note 2) VCC+ to VCC–. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) VCC+ to VCC–. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ±1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO (each output) ±80 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VCC+ 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VCC– 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values except differential voltages are with respect to the midpoint between VCC+ and VCC–.2. Differential voltages are at IN+ with respect to IN–.3. The output can be shorted to either supply. Temperatures and/or supply voltages must be limited to ensure that the maximum

dissipation rate is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C

PACKAGE APOWER RATING ABOVE TA = 25°C

APOWER RATING

APOWER RATING

APOWER RATING

D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 344 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIXUNIT

MIN MAX MIN MAX MIN MAXUNIT

Supply voltage, VCC± ±2.25 ±19 ±2.25 ±19 ±2.25 ±19 V

Common-mode input voltage VICVCC± = ±5 V –0.9 5 –0.8 5 –0.8 5

VCommon-mode input voltage, VICVCC± = ±15 V –10.9 15 –10.8 15 –10.8 15

V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C




electrical characteristics at specified free-air temperature, V CC± = ±5 V (unless otherwise noted)

PARAMETER TEST CONDITIONS T †TLE2072C TLE2072AC

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT

VIO Input offset voltageV 0 V 0

25°C 0.9 6 0.65 3.5mVVIO Input offset voltage

VIC = 0, VO = 0,R 50 Ω

Full range 7.8 5.3mV

αVIOTemperature coefficientof input offset voltage

IC ORS = 50 Ω

Full range 2.3 25 2.3 25 µV/°C

IIO Input offset currentV 0 V 0

25°C 5 100 5 100 pAIIO Input offset current

VIC = 0, VO = 0, Full range 1.4 1.4 nA

IIB Input bias current

VIC 0, VO 0,See Figure 4 25°C 15 175 15 175 pA

IIB Input bias currentFull range 5 5 nA

VC d i

R 50 Ω

25°C5 5 5 5

VVC d i

R 50 Ω

25°C5to

5to

5to

5to

VVICRCommon-mode input

RS = 50 Ω–1 –1.9 –1 –1.9

VVICRCommon mode inputvoltage range

RS = 50 Ω

F ll5 5

Vg g

Full range5to

5tog

–0.9 –0.9

VM i i i k

IO = –200 µA25°C 3.8 4.1 3.8 4.1

VVM i i i k

IO = –200 µAFull range 3.7 3.7

VVOMMaximum positive peak

IO = –2 mA25°C 3.5 3.9 3.5 3.9

VVOM+Maximum positive peakoutput voltage swing

IO = –2 mAFull range 3.4 3.4

V

IO = –20 mA25°C 1.5 2.3 1.5 2.3


VM i i k

IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2

VVM i i k

IO = 200 µAFull range –3.7 –3.7

VVOMMaximum negative peak

IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–Maximum negative peakoutput voltage swing

IO = 2 mAFull range –3.4 –3.4

V

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


AL i l diff i l

V 2 3 V

RL = 600 Ω25°C 80 91 80 91

dBAL i l diff i l

V 2 3 V

RL = 600 ΩFull range 79 79

dBAVDLarge-signal differential

VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDLarge signal differentialvoltage amplification

VO = ± 2.3 V RL = 2 kΩFull range 89 89

dB

RL = 10 kΩ25°C 95 106 95 106

RL = 10 kΩFull range 94 94

ri Input resistance VIC = 0 25°C 1012 1012 Ω

ci Input capacitanceVIC = 0,See Figure 5

Commonmode

25°C 11 11pFci Input capacitance See Figure 5

Differential 25°C 2.5 2.5

pF

zoOpen-loop output impedance

f = 1 MHz 25°C 80 80 Ω

CMRRCommon-mode VIC = VICRmin, 25°C 70 89 70 89

dBCMRRCommon moderejection ratio

VIC VICRmin,VO = 0, RS = 50 Ω Full range 68 68

dB

kSVRSupply-voltage rejection VCC± = ±5 V to ±15 V, 25°C 82 99 82 99

dBkSVRSupply voltage rejectionratio(∆VCC± /∆VIO)

VCC± ±5 V to ±15 V,VO = 0, RS = 50 Ω Full range 80 80

dB

ICCSupply current

VO = 0 No load25°C 2.7 2.9 3.6 2.7 2.9 3.6

mAICCpp y

(both channels) VO = 0, No loadFull range 3.6 3.6

mA

† Full range is 0°C to 70°C.




electrical characteristics at specified free-air temperature, V CC± = ±5 V (unless otherwise noted)(continued)



UNIT

ax Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB

IOSShort-circuit output

VO = 0VID = 1 V

25°C–35 –35

mAIOSShort circuit output current

VO = 0VID = –1 V

25°C45 45

mA

operating characteristics at specified free-air temperature, V CC± = ±5 V

PARAMETER TEST CONDITIONS TA†TLE2072C TLE2072AC


UNIT

SR P i i lV 2 3 V

25°C 35 35

V/SR+ Positive slew rateVO(PP) = ±2.3 V,AVD = –1 RL = 2 kΩ

Fullrange

22 22V/µs

SR N i l

AVD = –1, RL = 2 kΩ,CL = 100 pF, See Figure 1 25°C 38 38

V/SR– Negative slew rateCL = 100 pF, See Figure 1

Fullrange

22 22V/µs

ts Settling time

AVD = –1,2-V step,

To 10 mV25°C

0.25 0.25µsts Settling time 2 V step,

RL = 1 kΩ,CL = 100 pF To 1 mV

25°C0.4 0.4

µs

VnEquivalent input noise

R 20 Ω

f = 10 Hz25°C

28 55 28 55nV/√HzVn

Equivalent input noisevoltage

R 20 Ωf = 10 kHz

25°C11.6 17 11.6 17

nV/√Hz

VP k k i l

RS = 20 Ω,S Fi 3

f = 10 Hz to

25°C6 6

VVN(PP)Peak-to-peak equivalent

SSee Figure 3

f 10 Hz to10 kHz

25°C6 6

µVVN(PP)p q

input noise voltage f = 0.1 Hz to10 Hz

25°C0.6 0.6

µV

InEquivalent input noisecurrent

VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz

THD + NTotal harmonic distortion

VO(PP) = 5 V, AVD = 10,f = 1 kHz RL = 2 kΩ 25°C 0 013% 0 013%THD + N

Total harmonic distortionplus noise f = 1 kHz, RL = 2 kΩ,

RS = 25 Ω25°C 0.013% 0.013%

B1 Unity-gain bandwidthVI = 10 mV, RL = 2 kΩ,

25°C 9 4 9 4 MHzB1 Unity-gain bandwidthVI 10 mV, RL 2 kΩ,CL = 25 pF, See Figure 2

25°C 9.4 9.4 MHz

BOMMaximum output-swing VO(PP) = 4 V, AVD = –1,

25°C 2 8 2 8 MHzBOMMaximum output swingbandwidth

VO(PP) 4 V, AVD 1,RL = 2 kΩ , CL = 25 pF

25°C 2.8 2.8 MHz

φmPhase margin at unity VI = 10 mV, RL = 2 kΩ,

25°C 56° 56°φmg y

gainI , L ,

CL = 25 pF, See Figure 2 25°C 56° 56°








UNIT



VIC = 0, VO = 0,R 50 Ω



IC ORS = 50 Ω




VIC = 0, VO = 0, Full range 1.4 1.4 nA




VC d i

R 50 Ω

25°C15 15 15 15

VVC d i

R 50 Ω

25°C15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


RS = 50 Ω

F ll15 15

Vg g

Full range15to

15tog

–10.9 –10.9

VM i i i k

IO = –200 µA25°C 13.8 14.1 13.8 14.1

VVM i i i k



IO = –2 mA25°C 13.5 13.9 13.5 13.9



V

IO = –20 mA25°C 11.5 12.3 11.5 12.3


VM i i k

IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

VVM i i k

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14



V

IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


AL i l diff i l

V 10 V

RL = 600 Ω25°C 80 96 80 96

dBAL i l diff i l

V 10 V



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109


VO = ± 10 V RL = 2 kΩFull range 89 89

dB

RL = 10 kΩ25°C 95 118 95 118




Commonmode

25°C 7.5 7.5pFci Input capacitance See Figure 5


pF

zoOpen-loop outputimpedance

f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRSupply voltage rejectionratio (∆VCC± /∆VIO)


dB

ICCSupply current

VO = 0 No load25°C 2.7 3.1 3.6 2.7 3.1 3.6

mAICCpp y


mA








UNIT


IOS Short-circuit output current VO = 0VID = 1 V

25°C–30 –45 –30 –45

mAIOS Short-circuit output current VO = 0VID = –1 V

25°C30 48 30 48

mA


PARAMETER TEST CONDITIONS TA†TLE2072C TLE2072AC


UNIT

SR P i i lV 10 V

25°C 28 40 28 40

V/SR+ Positive slew rateVO(PP) = 10 V,AVD = –1 RL = 2 kΩ

Fullrange

25 25V/µs

SR N i l

AVD = –1, RL = 2 kΩ,CL = 100 pF, See Figure 1 25°C 30 45 30 45


Fullrange

25 25V/µs

ts Settling time


To 10 mV25°C


RL = 1kΩ,CL = 100 pF To 1 mV

25°C1.5 1.5

µs


R 20 Ω

f = 10 Hz25°C

28 55 28 55nV/√HzVn


R 20 Ω

f = 10 kHz25°C

11.6 17 11.6 17nV/√Hz

VP k t k

RS = 20 Ω, f = 10 Hz to

25°C6 6

VVN(PP)

Peak-to-peakequivalent input noise

S ,See Figure 3

f 10 Hz to10 kHz

25°C6 6

µVVN(PP) equivalent input noisevoltage f = 0.1 Hz to

10 Hz

25°C0.6 0.6

µV


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz

THD + NTotal harmonic


Total harmonicdistortion plus noise f = 1 kHz, RL = 2 kΩ,

RS = 25 Ω25°C 0.008% 0.008%



25°C 8 10 8 10 MHz


25°C 478 637 478 637 kHzBOMMaximum output swingbandwidth

VO(PP) 20 V, AVD 1,RL = 2 kΩ, CL = 25 pF

25°C 478 637 478 637 kHz


25°C 57° 57°φmg y

gainI , L ,

CL = 25 pF, See Figure 2 25°C 57° 57°






PARAMETER TEST CONDITIONS T †TLE2072I TLE2072AI


UNIT



VIC = 0, VO = 0,R 50 Ω



IC ORS = 50 Ω,




VIC = 0, VO = 0, Full range 5 5 nA




VC d i

R 50 Ω

25°C5 5 5 5

VVC d i

R 50 Ω

25°C5to

5to

5to

5to


RS = 50 Ω–1 –1.9 –1 –1.9


RS = 50 Ω

F ll5 5

Vg g

Full range5to

5tog

–0.8 –0.8

VM i i i k

IO = –200 µA25°C 3.8 4.1 3.8 4.1

VVM i i i k



IO = –2 mA25°C 3.5 3.9 3.5 3.9



V

IO = –20 mA25°C 1.5 2.3 1.5 2.3


VM i i k

IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2

VVM i i k



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1



V

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


AL i l diff i l

V 2 3 V

RL = 600 Ω25°C 80 91 80 91

dBAL i l diff i l

V 2 3 V



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100



dB

RL = 10 kΩ25°C 95 106 95 106




Commonmode



pF


f = 1 MHz 25°C 80 80 Ω




dB




dB

ICCSupply current

VO = 0 No load25°C 2.7 2.9 3.6 2.7 2.9 3.6

mAICCpp y


mA

† Full range is –40°C to 85°C.







UNIT



25°C–35 –35


25°C45 45

mA


PARAMETER TEST CONDITIONS TA†TLE2072I TLE2072AI


UNIT

SR P i i lV 2 3 V

25°C 35 35


Fullrange

20 20V/µs

SR N i l



Fullrange

20 20V/µs

ts Settling time


To 10 mV25°C



25°C0.4 0.4

µs


R 20 Ω

f = 10 Hz25°C

28 55 28 55nV/√HzVn


R 20 Ω

f = 10 kHz25°C

11.6 17 11.6 17nV/√Hz

VP k t k

RS = 20 Ω, f = 10 Hz to

25°C6 6

VVN(PP)

Peak-to-peak equivalent input

S ,See Figure 3

f 10 Hz to10 kHz

25°C6 6

µVVN(PP) equivalent inputnoise voltage f = 0.1 Hz to

25°C0 6 0 6

µVnoise voltage f 0.1 Hz to

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz



Total harmonic distortion plus noise f = 1 kHz, RL = 2 kΩ,

RS = 25 Ω25°C 0.013% 0.013%



25°C 9.4 9.4 MHz

BOMMaximum output- VO(PP) = 4 V, AVD = –1,

25°C 2 8 2 8 MHzBOMMaximum outputswing bandwidth


25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI , L ,

CL = 25 pF, See Figure 2 25°C 56° 56°








UNIT



VIC = 0, VO = 0,R 50 Ω



IC ORS = 50 Ω,








VC d i

R 50 Ω

25°C15 15 15 15

VVC d i

R 50 Ω

25°C15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


RS = 50 Ω

F ll15 15

Vg g

Full range15to

15tog

–10.8 –10.8

VM i i i k

IO = –200 µA25°C 13.8 14.1 13.8 14.1

VVM i i i k



IO = –2 mA25°C 13.5 13.9 13.5 13.9



V

IO = –20 mA25°C 11.5 12.3 11.5 12.3


VM i i k

IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

VVM i i k

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14



V

IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


AL i l diff i l

V 10 V

RL = 600 Ω25°C 80 96 80 96

dBAL i l diff i l

V 10 V



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109



dB

RL = 10 kΩ25°C 95 118 95 118




Commonmode



pF


f = 1 MHz 25°C 80 80 Ω




dB




dB

ICCSupply current

VO = 0 No load25°C 2.7 3.1 3.6 2.7 3.1 3.6

mAICCpp y


mA








UNIT



25°C–30 –45 –30 –45


25°C30 48 30 48

mA


PARAMETER TEST CONDITIONS TA†TLE2072I TLE2072AI


UNIT

SR P i i lV 10 V

25°C 28 40 28 40

V/SR+ Positive slew rateVO(PP) = ±10 V,AVD = –1 RL = 2 kΩ

Fullrange

22 22V/µs

SR N i l

AVD = –1, RL = 2 kΩ,CL = 100 pF, See Figure 1 25°C 30 45 30 45


Fullrange

22 22V/µs

ts Settling time


To 10 mV25°C



25°C1.5 1.5

µs

VnEquivalent input

R 20 Ω

f = 10 Hz25°C

28 55 28 55nV/√HzVn

Equivalent inputnoise voltage

R 20 Ω

f = 10 kHz25°C

11.6 17 11.6 17nV/√Hz

VP k t k

RS = 20 Ω, f = 0 Hz to

25°C6 6

VVN(PP)

Peak-to-peak equivalent input

S ,See Figure 3

f 0 Hz to10 kHz

25°C6 6


10 Hz

25°C0.6 0.6

µV

InEquivalent inputnoise current

VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz




RS = 25 Ω25°C 0.008% 0.008%



25°C 8 10 8 10 MHz

BOMMaximum output- VO(PP) = 20 V, AVD = –1,

25°C 478 637 478 637 kHzBOMMaximum outputswing bandwidth


25°C 478 637 478 637 kHz


25°C 57° 57°φmg y

gainI , L ,

CL = 25 pF, See Figure 2 25°C 57° 57°






PARAMETER TEST CONDITIONS T †TLE2072M TLE2072AM


UNIT



VIC = 0, VO = 0,R 50 Ω

Full range 10.5 8mV


IC ORS = 50 Ω,

Full range 2.3 25∗ 2.3 25∗ µV/°C







VC d i

R 50 Ω

25°C5 5 5 5

VVC d i

R 50 Ω

25°C5to

5to

5to

5to


RS = 50 Ω–1 –1.9 –1 –1.9


RS = 50 Ω

F ll5 5

Vg g

Full range5to

5tog

–0.8 –0.8

VM i i i k

IO = –200 µA25°C 3.8 4.1 3.8 4.1

VVM i i i k



IO = –2 mA25°C 3.5 3.9 3.5 3.9



V

IO = –20 mA25°C 1.5 2.3 1.5 2.3


VM i i k

IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2

VVM i i k



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1



V

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


AL i l diff i l

V 2 3 V

RL = 600 Ω25°C 80 91 80 91

dBAL i l diff i l

V 2 3 V



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100



dB

RL = 10 kΩ25°C 95 106 95 106




Commonmode



pF


f = 1 MHz 25°C 80 80 Ω




dB

∗On products compliant to MIL-STD-883, Class B, this parameter is not production tested.† Full range is –55°C to 125°C.







UNIT

kSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)

VCC± = ±5 V to ±15 V,VO = 0, RS = 50 Ω Full range 80 80 dB

ICCSupply current

VO = 0 No load25°C 2.7 2.9 3.6 2.7 2.9 3.6

mAICCSupply current(both channels)

VO = 0, No loadFull range 3.6 3.6

mA



VO = 0VID = 1 V

25°C–35 –35

mAIOSShort circuit output current VO = 0

VID = –1 V25°C

45 45mA


PARAMETER TEST CONDITIONS TA†TLE2072M TLE2072AM


UNIT

SR P i i lV 2 3 V

25°C 35 35


Fullrange

18∗ 18∗ V/µs

SR N i l



Fullrange

18∗ 18∗ V/µs

ts Settling time


To 10 mV25°C



25°C0.4 0.4

µs


R 20 Ω

f = 10 Hz25°C

28 55∗ 28 55∗nV/√HzVn


R 20 Ω

f = 10 kHz25°C

11.6 17∗ 11.6 17∗ nV/√Hz

VP k t k

RS = 20 Ω, f = 10 Hz to

25°C6 6

VVN(PP)

Peak-to-peakequivalent input

S ,See Figure 3

f 10 Hz to10 kHz

25°C6 6


25°C0 6 0 6


10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz



Total harmonicdistortion plus noise

f = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.013% 0.013%



25°C 9.4 9.4 MHz


25°C 2 8 2 8 MHzBOMMaximum output swingbandwidth


25°C 2.8 2.8 MHz


25°C 56° 56°φmPhase margin at unitygain

VI 10 mV, RL 2 kΩ,CL = 25 pF, See Figure 2

25°C 56° 56°








UNIT



VIC = 0, VO = 0,R 50 Ω

Full range 10.5 8mV


IC ORS = 50 Ω

Full range 2.4 25∗ 2.4 25∗ µV/°C







VC d i

R 50 Ω

25°C15 15 15 15

VVC d i

R 50 Ω

25°C15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


RS = 50 Ω

F ll15 15

Vg g

Full range15to

15tog

–10.8 –10.8

VM i i i k

IO = –200 µA25°C 13.8 14.1 13.8 14.1

VVM i i i k



IO = –2 mA25°C 13.5 13.9 13.5 13.9



V

IO = –20 mA25°C 11.5 12.3 11.5 12.3


VM i i k

IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

VVM i i k

IO = 200 µAFull range –13.6 –13.6


IO = 2 mA25°C –13.5 –14 –13.5 –14



V

IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


AL i l diff i l

V 10 V

RL = 600 Ω25°C 80 96 80 96

dBAL i l diff i l

V 10 V



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109



dB

RL = 10 kΩ25°C 95 118 95 118




Commonmode



pF

zoOpen-loop outputimpedance

f = 1 MHz 25°C 80 80 Ω




dB




dB








UNIT

ICCSupply current

VO = 0 No load25°C 2.7 3.1 3.6 2.7 3.1 3.6

mAICCSupply current(both channels)

VO = 0, No loadFull range 3.6 3.6

mA



VO = 0VID = 1 V

25°C–30 –45 –30 –45

mAIOSShort circuit outputcurrent

VO = 0VID = –1 V

25°C30 48 30 48

mA


PARAMETER TEST CONDITIONS TA†TLE2072M TLE2072AM


UNIT

SR P i i lV 10 V A 1

25°C 28 40 28 40

V/SR+ Positive slew rateVO(PP) = 10 V, AVD = –1,RL = 2 kΩ CL = 100 pF

Fullrange

20 20V/µs

SR N i l

RL = 2 kΩ, CL = 100 pF,See Figure 1 25°C 30 45 30 45

V/SR– Negative slew rateSee Figure 1

Fullrange

20 20V/µs

ts Settling time


To 10 mV25°C



25°C1.5 1.5

µs


R 20 Ω

f = 10 Hz25°C

28 55∗ 28 55∗nV/√HzVn


R 20 Ω

f = 10 kHz25°C

11.6 17∗ 11.6 17∗ nV/√Hz

VP k t k

RS = 20 Ω, f = 10 Hz to

25°C6 6

VVN(PP)

Peak-to-peakequivalent input

S ,See Figure 3

f 10 Hz to10 kHz

25°C6 6

µVVN(PP) equivalent input noise voltage f = 0.1 Hz to

25°C0 6 0 6


10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz




RS = 25 Ω25°C 0.008% 0.008%


25°C 8∗ 10 8∗ 10 MHzB1 Unity-gain bandwidthVI 10 mV, RL 2 kΩ,CL = 25 pF, See Figure 2

25°C 8∗ 10 8∗ 10 MHz

BOM

Maximumoutput-swing

VO(PP) = 20 V, AVD = –1,25°C 478∗ 637 478∗ 637 kHzBOM output-swing

bandwidth


25°C 478∗ 637 478∗ 637 kHz


25°C 57° 57°φmg y

gainI , L ,

CL = 25 pF, See Figure 2 25°C 57° 57°





electrical characteristics at V CC± = ±15 V, TA = 25°C

PARAMETER TEST CONDITIONSTLE2072Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT

VIO Input offset voltage VIC = 0, VO = 0, RS = 50 Ω 1.1 6 mV

IIO Input offset currentVIC = 0 VO = 0 See Figure 4

6 100 pA

IIB Input bias currentVIC = 0, VO = 0, See Figure 4

20 175 pA

V C d i l R 50 Ω15 15

VVICR Common-mode input voltage range RS = 50 Ω15to

15to VICR p g g S

–11 11.9

V M i i i k l i

IO = –200 µA 13.8 14.1

VVOM+ Maximum positive peak output voltage swing IO = –2 mA 13.5 13.9 VOM+ p p p g g

IO = –20 mA 11.5 12.3

VMaximum negative peak

IO = 200 µA –13.8 –14.2


IO = 2 mA –13.5 –14 VOM output voltage swingIO = 20 mA – 11.5 – 12 .4

A L i l diff i l l lifi i V 10 V

RL = 600 Ω 80 96

dBAVD Large-signal differential voltage amplification VO = ± 10 V RL = 2 kΩ 90 109 dBVD g g g p ORL = 10 kΩ 95 118

ri Input resistance VIC = 0 1012 Ω

ci Input capacitanceVIC = 0, Common mode 7.5

pFci Input capacitanceVIC 0,See Figure 5 Differential 2.5

pF

zo Open-loop output impedance f = 1 MHz 80 Ω

CMRR Common-mode rejection ratio VIC = VICRmin, VO = 0, RS = 50 Ω 80 98 dB

kSVR Supply-voltage rejection ratio (∆VCC± /∆VIO)VCC± = ±5 V to ±15 V, VO = 0,RS = 50 Ω 82 99 dB

ICC Supply current (both channels) VO = 0, No load 2.7 3.1 3.6 mA

IOS Short circuit output current VO = 0VID = 1 V –30 –45

mAIOS Short-circuit output current VO = 0VID = –1 V 30 48

mA

PARAMETER MEASUREMENT INFORMATION

–+

2 kΩ

2 kΩ

RL CL†

VO

VCC+

VCC–

VI–+

10 kΩ

VO

CL†

100 Ω

RL

VCC+

VCC–

VI

Figure 1. Slew-Rate Test Circuit Figure 2. Unity-Gain Bandwidth andPhase-Margin Test Circuit

† Includes fixture capacitance




PARAMETER MEASUREMENT INFORMATION

–+

–+

2 kΩ

VCC+ VCC+

VO VO

VCC–VCC–RS RS

Ground Shield

Picoammeters

Figure 3. Noise-Voltage Test Circuit Figure 4. Input-Bias and Offset-Current Test Circuit

–

+

VCC+

VO

VCC–

IN–

IN+Cic Cic

Cid

Figure 5. Internal Input Capacitance

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias-current level typical of the TLE2072 and TLE2072A, accurate measurement of the biasbecomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easilyexceed the actual device bias currents. To accurately measure these small currents, Texas Instruments usesa two-step process. The socket leakage is measured using picoammeters with bias voltages applied but withno device in the socket. The device is then inserted in the socket and a second test is performed that measuresboth the socket leakage and the device input bias current. The two measurements are then subtractedalgebraically to determine the bias current of the device.

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 6

αVIO Temperature coefficient Distribution 7

IIO Input offset current vs Free-air temperature 8, 9

IIB Input bias currentvs Free-air temperature 8, 9

IIB Input bias currentp

vs Supply voltage,

10

VICR Common-mode input voltage range vs Free-air temperature 11

VID Differential input voltage vs Output voltage 12, 13





Table of Graphs (Continued)

FIGURE

V M i i i k lvs Output current 14

VOM+ Maximum positive peak output voltagevs Output currentvs Free-air temperature

S l l

1416, 17OM+ p p p g p

vs Supply voltage 18

V M i i k lvs Output current 15

VOM– Maximum negative peak output voltagevs Output currentvs Free-air temperature

S l l

1516, 17OM g p p g p


VO(PP) Maximum peak-to-peak output voltage vs Frequency 19

VO Output voltage vs Settling time 20

A Diff i l l lifi ivs Load resistance 21

AVD Differential voltage amplificationvs Load resistancevs Free-air temperature

F

2122, 23VD g p p

vs Frequency 24, 25

CMRR Common-mode rejection ratiovs Frequency 26

CMRR Common-mode rejection ratioq y

vs Free-air temperature 27

kSVR Supply-voltage rejection ratiovs Frequency 28

kSVR Supply-voltage rejection ratioq y


I S lvs Supply voltage 30

ICC Supply currentvs Supply voltagevs Free-air temperature

Diff i l i l

3031CC pp y p

vs Differential input voltage 32, 33

I Sh i ivs Supply voltage 34

IOS Short-circuit output currentvs Supply voltagevs Elapsed time

F i

3435OS p p


SR Slvs Free-air temperature 37, 38

SR Slew ratevs Free air temperaturevs Load resistance

Diff i l i l

37, 3839

vs Differential input voltage 40

Vn Equivalent input noise voltage vs Frequency 41

Vn Input-referred noise voltagevs Noise bandwidth 42

Vn Input-referred noise voltage Over a 10-second time interval 43

Third-octave spectral noise density vs Frequency bands 44

THD +N Total harmonic distortion plus noise vs Frequency 45, 46

B1 Unity-gain bandwidth vs Load capacitance 47

Gain-bandwidth productvs Free-air temperature 48

Gain-bandwidth productp


Gain margin vs Load capacitance 50

Ph ivs Free-air temperature 51

φm Phase marginvs Free air temperaturevs Supply voltage

L d i

5152φm g pp y g

vs Load capacitance 53

Phase shift vs Frequency 24, 25

Large-signal pulse response, noninverting vs Time 54

Small-signal pulse response vs Time 55

zo Closed-loop output impedance vs Frequency 56

ax Crosstalk attenuation vs Frequency 57




TYPICAL CHARACTERISTICS †

VIO – Input Offset Voltage – mV

15

12

6

3

0

27

9

– 30 – 24 –18 –12 – 6 0 6P

erce

ntag

e of

Am

plifi

ers

– %

21

18

24

DISTRIBUTION OF TLE2072 INPUT OFFSETVOLTAGE TEMPERATURE COEFFICIENT

30

12 18 24 30

10

8

4

2

0

18

6

– 4 – 2.4 – 0.8 0.8

Per

cent

age

of U

nits

– % 14

12

16

DISTRIBUTION OF TLE2072INPUT OFFSET VOLTAGE

20

2.4 4

VIO

600 Units Tested From One Wafer Lot 310 AmplifiersVCC = ±15 VTA = – 55°C to 125°C

VCC = ±15 V

αVIO – Temperature Coefficient – µV/°C

P PackageTA = 25°CP Package

Figure 6 Figure 7

0.01

25 45

INPUT BIAS CURRENT ANDINPUT OFFSET CURRENT

vsFREE-AIR TEMPERATURE

100

65 85 105 125

0.1

1

10

INPUT BIAS CURRENT ANDINPUT OFFSET CURRENT


25 45 65 85 105 125

0.01

100

0.1

1

10

VCC± = ±5 VVIC = 0VO = 0

VCC± = ±15 VVIC = 0VO = 0

IIB

IIO

IIO

IIB

–75 –55 –35 –15 –5 –75 –55 –35 –15 5

TA – Free-Air Temperature – °C TA – Free-Air Temperature – °C

IIB a

nd II

O –

Inpu

t Bia

s an

d In

put O

ffset

Cur

rent

s –

nAIBI

I IO

0.001

IIB a

nd II

O –

Inpu

t Bia

s an

d In

put O

ffset

Cur

rent

s –

nAIBI

I IO

0.001

Figure 8 Figure 9

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





104

103

102

100

101

106

VIC

– C

omm

on-M

ode

Inpu

t Vol

tage

Ran

ge –

VV I

C

IIB –

Inpu

t Bia

s C

urre

nt –

pA

5 25 45

COMMON-MODE INPUT VOLTAGE RANGEvs


65 85 105 125

INPUT BIAS CURRENTvs

SUPPLY VOLTAGE

0 5 10 15 20 25 30 35 40 45

I IB TA = 25°C

TA = –55°C

RS = 50 Ω

105 VICminTA = 125°C

VICmax = VCC+

VCC+ +0.5

VCC+ –0.5

VCC– +3.5

VCC+

VCC– +3

VCC– +2.5

VCC– +2

VICmin

VICmax

– 75 –55 –35 –15

VCC – Total Supply Voltage (Referred to V CC–) – V TA – Free-Air Temperature – °C

Figure 10 Figure 11

VID

– D

iffer

entia

l Inp

ut V

olta

ge –

uV

IDV

– 100

– 200

– 300

– 400– 15 – 10 – 5 50

100

200

400

10 15– 5 – 4 – 3 – 2 – 10 0 1

DIFFERENTIAL INPUT VOLTAGEvs

OUTPUT VOLTAGE

2 5

RL = 2 kΩRL = 2 kΩ

VCC± = ±15 V

RL = 10 kΩ

RL = 10 kΩ

RL = 2 kΩRL = 2 kΩ

RL = 10 kΩ

RL = 10 kΩ

VCC± = ±5 VVIC = 0RS = 50 ΩTA = 25°C

RL = 600 Ω RL = 600 Ω

RL = 600 ΩRL = 600 Ω

DIFFERENTIAL INPUT VOLTAGEvs

OUTPUT VOLTAGE

300

0

– 100

– 200

– 300

– 400

100

200

400

300

0

3 4

VO – Output Voltage – V V O – Output Voltage – V

Vµ

VID

– D

iffer

entia

l Inp

ut V

olta

ge –

uV

IDV

Vµ

VIC = 0RS = 50 ΩTA = 25°C

Figure 12 Figure 13






– M

axim

um N

egat

ive

Pea

k O

utpu

t Vol

tage

– V

VO

M –

Max

imum

Pos

itive

Pea

k O

utpu

t Vol

tage

– V

–7.5

– 6

– 3

–1.5

0

–13.5

– 4.5

0 5 10 15 20 25 30

–10.5

– 9

–12

–15

35 40 45 50

7.5

6

3

1.5

0

13.5

4.5

0 – 5 –10 –15 – 20 – 25 – 30

10.5

9

12

MAXIMUM POSITIVE PEAK OUTPUT VOLTAGEvs

OUTPUT CURRENT15

– 35 – 40 – 45 – 50

VO

M+

VO

M –

MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGEvs

OUTPUT CURRENT

TA = 25°C

TA = 125°C

TA = –55°C

VCC± = ±15 V

TA = –55°C

TA = 25°C

TA = 125°C TA = 85°C TA = 85°C

IO – Output Current – mA I O – Output Current – mA

VCC± = ±15 V

Figure 14 Figure 15

VO

M –

Max

imum

Pea

k O

utpu

t Vol

tage

– V

12.5

12

11

10.5

10

14.5

11.5

5 25 45

|

|

– M

axim

um P

eak

Out

put V

olta

ge –

V

13.5

13

14

15

65 85 105 125

0

– 1

– 3

– 4

– 5

4

– 2

5 25 45

2

1

3

MAXIMUM PEAK OUTPUT VOLTAGEvs


5

65 85 105 125

VO

M

VO

M



IO = –20 mA

IO = 20 mA

IO = 2 mA

IO = –200 µA IO = 200 µA

VCC± = ±15 V

IO = –200 µA

IO = –2 mA

IO = –20 mA

VCC± = ±5 V

IO = 20 mA

IO = 2 mA

IO = 200 µA

–75 –55 –35 –15–75 –55 –35 –15

TA – Free-Air Temperature – °C TA – Free-Air Temperature – °C

IO = –2 mA

Figure 16 Figure 17






VO

(PP

) –

Max

imum

Pea

k-to

-Pea

k O

utpu

t Vol

tage

– V

20

5

0

30

10

25

100 k 1 M 10 Mf – Frequency – Hz

VO

(PP

)

15

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

TA = –55°C

TA = 25°C, 125°C

TA = 25°C, 125°C

RL = 2 kΩ

VCC± = ±5 V

VO

M –

Max

imum

Pea

k O

utpu

t Vol

tage

– V

0

– 5

–15

– 20

– 25

20

–10

0 2.5 5 7.5 10 12.5 15

10

5

15


SUPPLY VOLTAGE

25

17.5 20 22.5 25

V OM

IO = –2 mA

IO = –20 mA

IO = 20 mA

IO = 200 µA

IO = 2 mA

|VCC± | – Supply Voltage – V

VCC± = ±15 V

TA = –55°C

TA = 25°C

IO = –200 µA

Figure 18 Figure 19

0 0.5 1 1.5 2

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION

vsLOAD RESISTANCE

VO

– O

utpu

t Vol

tage

– V

OUTPUT VOLTAGEvs

SETTLING TIME

V O

115

110

100

95

90

125

105

0.1 1 10 100

120

VCC± = ±15 VRL = 1 kΩCL = 100 pFAV = –1TA = 25°C

1 mV

1 mV

Rising

Falling

10 mV

10 mV

– 2.5

– 10

– 12.5

10

12.5

– 5

7.5

2.5

– 7.5

5

0

VCC± = ±15 V

VCC± = ±5 V

VIC = 0RS = 50 ΩTA = 25°C

ts – Settling Time – µs RL – Load Resistance – k Ω

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁ

AV

D Volta

ge A

mpl

ifica

tion

– dB

Figure 20 Figure 21






TA – Free-Air Temperature – °C125105–15– 35– 55

105

101

93

89

85

121

97

113

109

117

125

95

92

86

83

80

107

89

–75 – 55 – 35 –15 5 25 45

101

98

104



110

65 85 105 125



RL = 10 kΩ

RL = 2 kΩ

VCC± = ±5 VVO = ±2.3 V

RL = 600 Ω

RL = 10 kΩ

–75 5 25 45 65 85


RL = 600 Ω

RL = 2 kΩ

VCC± = ±15 VVO = ±10 V

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

AV

D Volta

ge A

mpl

ifica

tion

– dB

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁ

AV

D Volta

ge A

mpl

ifica

tion

– dB

Figure 22 Figure 23

60

20

0

– 40

1 10 100 1 k 10 k 100 k

100

120


SMALL-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

140

1 M 10 M 100 M

80

40

Gain

Phase Shift

– 20

140°

120°

100°

80°

60°

40°

20°

0°P

hase

Shi

ft

180°

160°

VCC± = ±15 VRL = 2 kΩCL = 100 pFTA = 25°C

AV

D –

Sm

all-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

Avd Vo

ltage

Am

plifi

catio

n –

dB

Figure 24






– 10

– 20

30

1 4 10 40 100

f – Frequency – MHz

20

10

0

CL = 100 pF

CL = 25 pF

VCC± = ± 15 V

Phase Shift

Gain

80°

120°

100°

140°

160°

180°

Pha

se S

hift

CL = 100 pF

CL = 25 pF

SMALL-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

VIC = 0RC = 2 kΩTA = 25°C

AV

D –

Sm

all-S

igna

l Diff

eren

tial

ÁÁÁÁ

Avd Vo

ltage

Am

plifi

catio

n –

dB

Figure 25


85

82

76

73

70

97

79

–75 – 55 – 35 –15 5 25 45

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B

91

88

94

100

65 85 105 12510 100 1 k 10 k

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B


COMMON-MODE REJECTION RATIOvs

FREQUENCY

100 k 1 M 10 M

VCC± = ±15 V

VCC± = ±5 V

VIC = 0VO = 0RS = 50 ΩTA = 25°C

VIC = VICRmin

VCC± = ±5 V

VCC± = ±15 V

COMMON-MODE REJECTION RATIOvs


50

40

20

10

0

90

30

70

60

80

100

VO = 0RS = 50 Ω

Figure 26 Figure 27







XX

XX

– S

uppl

y-V

olta

ge R

ejec

tion

Rat

io –

dB

k S

VR

90

84

72

66

60

114

78

–75 – 55 – 35 –15 5 25 45

102

96

108

120

65 85 105 125

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

40

20

0

– 2010 100 1 k 10 k 100 k

60

80


100

1 M 10 M

120

SUPPLY-VOLTAGE REJECTION RATIOvs


kSVR+

kSVR–

kSVR+

kSVR–

∆VCC± = ±5 V to ±15 VVIC = 0VO = 0RS = 50 ΩTA = 25°C X

XX

X –

Sup

ply-

Vol

tage

Rej

ectio

n R

atio

– d

Bk

SV

R

∆VCC± = ±5 V to ±15 VVIC = 0VO = 0RS = 50 Ω

Figure 28 Figure 29

TA – Free-Air Temperature – °C|VCC±| – Supply Voltage – V

ICC

– S

uppl

y C

urre

nt –

mA

3

2.9

2.7

2.6

2.5

3.4

2.8

–75 –55 –35 –15 5 25 45

ICC

– S

uppl

y C

urre

nt –

mA

3.2

3.1

3.3

3.5

65 85 105 125

3

2.8

2.4

2.2

2

3.8

2.6

0 2.5 5 7.5 10 12.5 15

3.4

3.2

3.6

SUPPLY CURRENTvs

SUPPLY VOLTAGE4

17.5 20 22.5 25

CC

I CC

I

TA = –55°C

VIC = 0VO = 0No Load

VCC± = ±15 V

VCC± = ±5 V

SUPPLY CURRENTvs


TA = 25°C

TA = 125°C

VIC = 0VO = 0No Load

Figure 30 Figure 31






VID – Differential Input Voltage – VVID – Differential Input Voltage – V

ICC

– S

uppl

y C

urre

nt –

mA

SUPPLY CURRENTvs

DIFFERENTIAL INPUT VOLTAGE

– 0.5 – 0.25 0 0.25 0.50

6

8

10

12

14

10

5

0–1.5 –1 – 0.5 0 0.5 1 1.5

ICC

– S

uppl

y C

urre

nt –

mA

15

20

25

I CC

I CC

VCC+ = 5 VVCC– = 0VIC = 4.5 VTA = 25°COpen LoopNo Load

SUPPLY CURRENTvs


4

2

VCC± = ±15 VVIC = 0TA = 25°COpen LoopNo Load

Figure 32 Figure 33

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25

0

–12

– 36

– 48

– 60

48

– 24

24

12

36

SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE60

10

–10

– 20

– 500 60 120

30

40

t – Elapsed Time – s

50

180

20

0

I OS

I OS


ELAPSED TIME

VCC± = ±15 VVO = 0TA = 25°C

VID = –1 V

VID = –1 V

VID = 1 VVID = 1 V – 30

– 40

|VCC± | – Supply Voltage – V

VO = 0TA = 25°C

Figure 34 Figure 35






TA – Free-Air Temperature – °CTA – Free-Air Temperature – °C

SR

– S

lew

Rat

e –

V/x

s

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

35

33

29

27

25

43

31

–75 – 55 – 35 –15 5 25 45

39

37

41

SLEW RATEvs

FREE-AIR TEMPERATURE45

65 85 105 125

0

– 16

– 48

– 64

– 80

64

– 32

–75 – 55 – 35 –15 5 25 45

32

16

48



80

65 85 105 125

OS

I

sµ

V/

VCC± = ±15 V

VCC± = ±15 V

VCC± = ±5 V

VCC± = ±5 V

VID = –1 V

VID = 1 V

VO = 0

VCC± = ± 5 VRL = 2 kΩCL = 100 pF

SR–

SR+

Figure 36 Figure 37

RL – Load Resistance – ΩTA – Free-Air Temperature – °C

10

–10

0

– 20

– 50

50

– 30

100 1 k 10 k 100 k

30

20

40

50

46

38

34

30

66

42

–75 – 55 – 35 –15 5 25 45

SR

– S

lew

Rat

e –

58

54

62

SLEW RATEvs

FREE-AIR TEMPERATURE70

65 85 105 125

sµ

V/

SLEW RATEvs

LOAD RESISTANCE

VCC± = ±15 VRL = 2 kΩCL = 100 pF

SR–

SR+

VCC± = ±15 VVO± = ±10 V

VCC± = ±5 VVO± = ±2.5 V

AV = –1CL = 100 pFTA = 25°C

Rising Edge

Falling Edge

– 40

SR

– S

lew

Rat

e –

sµ

V/

Figure 38 Figure 39






VID – Differential Input Voltage – V

Vn

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

–

50

0.1 0.4 1 4 10

SLEW RATEvs


40

5

25

15

0

50

30

10 100 1 k 10 k

45

10

20


INPUT-REFERRED NOISE VOLTAGESPECTRAL DENSITY

vsFREQUENCY

35

nV

nV/

Hz

VCC± = ±15 VVIC = 0RS = 20 ΩTA = 25°C

VCC± = ±15 VVO± = ±10 V (10% – 90%)CL = 100 pFTA = 25°C

Rising Edge

Falling Edge

AV = –1

AV = –1

AV = 1

AV = 1

40

30

20

10

0

–10

– 20

– 30

– 40

– 50

SR

– S

lew

Rat

e –

sµ

V/

Figure 40 Figure 41

0.3

0

– 0.3

– 0.60 1 2 3 4 5 6

Vn

– In

put-

Ref

erre

d N

oise

Vol

tage

–

0.6

0.9

t – Time – s

INPUT-REFERRED NOISE VOLTAGEOVER A 10-SECOND TIME INTERVAL

1.2

7 8 9 100.01

1 10 100 1 k 10 k 100 k

Noise Bandwidth – Hz

1

0.1

10

100

INPUT-REFERRED NOISE VOLTAGEvs

NOISE BANDWIDTH

Vn

µV

VCC± = ±15 VVIC = 0RS = 20 ΩTA = 25°C

VCC± = ±15 Vf = 0.1 to 10 HzTA = 25°C

Peak-to-Peak

RMS

Vn

– In

put-

Ref

erre

d N

oise

Vol

tage

–V

nµ

V

Figure 42 Figure 43






– 90

– 95

–100

–11510 15 20 25 30 35

Thi

rd-O

ctav

e S

pect

ral N

oise

Den

sity

– d

B

– 85

– 80

Frequency Bands

THIRD-OCTAVE SPECTRAL NOISE DENSITYvs

FREQUENCY BANDS– 75

40 450.001

10 100 1 k 10 k 100 kT

HD

+ N

– T

otal

Har

mon

ic D

isto

rtio

n +

Noi

se –

%

0.01


TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.1

1

VCC± = ±15 V

Start Frequency: 12.5 HzStop Frequency: 20 kHz

VCC± = ±5 VVO(PP) = 5 VTA = 25°CFilter: 10-Hz to 500-kHz Band Pass

AV = 100, RL = 600 Ω

AV = 100, RL = 2 kΩ

AV = 10, RL = 2 kΩ

AV = 10, RL = 600 Ω

–105

–110

VIC = 0TA = 25°C

Figure 44 Figure 45

10 100 1 k 10 k 100 k


B1

– U

nity

-Gai

n B

andw

idth

– M

Hz

B1

0.001TH

D +

N –

Tot

al H

arm

onic

Dis

tort

ion

+ N

oise

– %

TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.01

0.1

1

10

9

8

70 20 40 60

11

12

UNITY-GAIN BANDWIDTHvs

LOAD CAPACITANCE13

80 100

Filter: 10-Hz to 500-kHz Band Pass

AV = 10, RL = 2 kΩ

AV = 10, RL = 600 Ω

AV = 100, RL = 2 kΩ

AV = 100, RL = 600 Ω

VCC± = ±15 VVIC = 0VO = 0RL = 2 kΩTA = 25°C

VCC± = ±15 VVO(PP) = 20 VTA = 25°C

CL – Load Capacitance – pF

Figure 46 Figure 47





TA – Free-Air Temperature – °C |VCC + | – Supply Voltage – V

10

9

8

7–75 – 55 – 35 –15 5 25 45

Gai

n-B

andw

idth

Pro

duct

– M

Hz

11

12



13

65 85 105 125

10

9

8

70 5 10 15

Gai

n-B

andw

idth

Pro

duct

– M

Hz

11

12

13

20 25

CC ±V

f = 100 kHzVIC = 0VO = 0RL = 2 kΩCL = 100 pFTA = 25°C

f = 100 kHzVIC = 0VO = 0RL = 2 kΩCL = 100 pF

VCC± = ±15 V

VCC± = ±5 V


SUPPLY VOLTAGE

Figure 48 Figure 49

30°

20°

10°

0°

40°

50°

60°

70°

80°

90°

Gai

n M

argi

n –

dB

xm –

Pha

se M

argi

n

–75 – 55 – 35 –15 5 25 45

PHASE MARGINvs


65 85 105

6

4

2

00 20 40 60

8

GAIN MARGINvs

LOAD CAPACITANCE10

80 100

mφ

VCC± = ±15 VVIC = 0VO = 0RL = 2 kΩTA = 25°C VCC± = ±15 V

VCC± = ±15 V

VCC± = ±5 V

VCC± = ±5 V

125

VIC = 0VO = 0

CL = 25 pF

CL = 100 pF

CL – Load Capacitance – pF TA – Free-Air Temperature – °C

RL = 2 kΩ

Figure 50 Figure 51






0°

10°

90°

80°

PHASE MARGINvs

SUPPLY VOLTAGE

0 4 8 12 16 20

VIC = 0VO = 0RL = 2 kΩTA = 25°C

VCC± = ±15 V

VIC = 0VO = 0RL = 2 kΩTA = 25°C

VCC± = ±5 V

PHASE MARGINvs

LOAD CAPACITANCE

30°

20°

40°

50°

60°

70°

0°

10°

90°

80°

30°

20°

40°

50°

60°

70°

0 20 40 60 80 100

CL = 25 pF

CL = 100 pF

CL – Load Capacitance – pF|VCC±| – Supply Voltage – V

xm –

Pha

se M

argi

nm

φxm –

Pha

se M

argi

nm

φ

Figure 52 Figure 53

VO

– O

utpu

t Vol

tage

– V

0

– 5

– 10

– 150 1

5

10

NONINVERTING LARGE-SIGNALPULSE RESPONSE

15

2 4 5

0

– 50

–1000 0.4 0.8

VO

– O

utpu

t Vol

tage

– m

V

50

SMALL-SIGNAL PULSE RESPONSE100

1.2 1.6

VO

V OVCC± = ±15 VAV = 1RL = 2 kΩCL = 100 pF

TA = 25°C, 125°C

TA = 25°C, 125°C

TA = –55°C

VCC± = ±15 V

3

TA = –55°C

t – Time – µs t – Time – µs

AV = –1RL = 2 kΩCL = 100 pFTA = 25°C

Figure 54 Figure 55






100

60

40

20

140

80

10 100 1 k 10 k 100 kax

– C

ross

talk

Atte

nuat

ion

– dB

120


CROSSTALK ATTENUATIONvs

FREQUENCY

ax VCC± = ±15 V

VIC = 0RL = 2 kΩTA = 25°C

CLOSED-LOOP OUTPUT IMPEDANCEvs

FREQUENCY

0.00110 100 1 k 10 k 100 k 1 M 10 M


1

0.1

10

100

AV = 100

AV = 10

AV = 1

VCC± = ±15 VTA = 25°C

0.01

zo –

Clo

sed-

Loop

Out

put I

mpe

danc

e –

Xz o

Ω

Figure 56 Figure 57† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.




APPLICATION INFORMATION

macromodel information

Macromodel information provided was derived using PSpice Parts model generation software. The Boylemacromodel (see Note 4) and subcircuit in Figure 58 were generated using the TLE2072 typical electrical andoperating characteristics at TA = 25°C. Using this information, output simulations of the following key parameterscan be generated to a tolerance of 20% (in most cases):

• Unity-gain frequency

• Common-mode rejection ratio

• Phase margin

• DC output resistance

• AC output resistance

• Short-circuit output current limit

• Maximum positive output voltage swing

• Maximum negative output voltage swing

• Slew rate

• Quiescent power dissipation

• Input bias current

• Open-loop voltage amplificationNOTE 4: G.R. Boyle, B.M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal

of Solid-State Circuits, SC-9, 353 (1974).

OUT

+

–

+

–

+

–

+

–+

–

+

– +

–

+–

.SUBCKT TLE2072 1 2 3 4 5C1 11 12 2.2E–12C2 6 7 10.00E–12DC 5 53 DXDE 54 5 DXDLP 90 91 DXDLN 92 90 DXDP 4 3 DXEGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5FB 7 99 POLY (5) VB VC VE VLP

+ VLN 0 5.607E6 –6E6 6E6 6E6 –6E6GA 6 0 11 12 333.0E–6GCM 0 6 10 99 7.43E–9ISS 3 10 DC 400.0E–6HLIM 90 0 VLIM 1KJ1 11 2 10 JXJ2 12 1 10 JX

RD1 4 11 3.003E3RD2 4 12 3.003E3R01 8 5 80R02 7 99 80RP 3 4 27.30E3RSS 10 99 500.0E3VB 9 0 DC 0VC 3 53 DC 2.20VE 54 4 DC 2.20VLIM 7 8 DC 0VLP 91 0 DC 45VLN 0 92 DC 45

.MODEL DX D (IS=800.0E–18)

.MODEL JX PJF (IS=15.00E–12 BETA=554.5E–6+ VTO=–.6).ENDS

VCC+

RP

IN–2

IN+1

VCC–

RD1

11

J1 J2

10

RSS ISS

3

12

RD2

VE

54DE

DP

VC

DC

C1

53

R2

6

9

EGND

VB

FB

C2

GCM GA VLIM

8

5

RO1

RO2

HLIM

90

DIP

91

DIN

92

VINVIP

99

7

4

R2 6 9 100.0E3

Figure 58. Boyle Macromodel and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.




IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable atthe time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques areutilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of eachdevice is not necessarily performed, except those mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, orsevere property or environmental damage (“Critical Applications”).

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTEDTO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TIproducts in such applications requires the written approval of an appropriate TI officer. Questions concerningpotential risk applications should be directed to TI through a local SC sales office.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards should be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance, orinfringement of patents or services described herein. Nor does TI warrant or represent that any license, eitherexpress or implied, is granted under any patent right, copyright, mask work right, or other intellectual propertyright of TI covering or relating to any combination, machine, or process in which such semiconductor productsor services might be or are used.

Copyright 1996, Texas Instruments Incorporated

Documents

tle2072, tle2072a, tle2072y excalibur low-noise high-speed jfet