33
Tutorial on Electronic Transport Roberto Car Princeton University Density Functional Theory: Fundamentals and Applications in Condensed Matter Physics, Jan 23-28 2011, BIRS, Banff

Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

  • Upload
    others

  • View
    0

  • Download
    0

Embed Size (px)

Citation preview

Page 1: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Tutorial on ElectronicTransport

Roberto CarPrinceton University

Density Functional Theory: Fundamentals and Applications in CondensedMatter Physics, Jan 23-28 2011, BIRS, Banff

Page 2: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Contents

• Basic background

• Quantum master equation approach

• Linear response formulation

• Some challenges

Page 3: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Boltzmann’s equation: the standardapproach to electric transport in the

bulk

field collisions

df f fdt t t

! !" # " #= +$ % $ %! !& ' & '

Steady State:

field collisions

f ft t

! !" # " #= $% & % &! !' ( ' (

( , ; )f f x p t! is a classical probability distribution

Page 4: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Can it be derived from quantummechanics?

i i ii

f S p! !" =#The answer is yes if Joule heating can be neglected (linear regime with theapplied field) and collisions with diluted impurities are considered

Kohn and Luttinger, Phys. Rev. 108, 590 (1957)

This paper also contains the idea that ring geometry and gauge invariancecan be used to apply an electric field to a periodic crystal

The resistance in the Ohmic regime is due to impurity and/or phononscattering. This resistance leads to energy dissipation

Page 5: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Electric transport at the nanoscale:molecular electronics

A nano device (e.g. molecule + contacts) is partof a circuit under an applied electromotive force.

Experiments measure the current I versus theapplied bias V. This gives the conductance

Macroscopically:

IgV

=

(Ohm's law)AgL

!=

Microscopically this formula is not valid and should be replaced by:

Landauer’s formula

This is a consequence of Quantum Mechanics

Page 6: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Level quantization is a source ofresistance. Ballistic (dissipationless)

conductance

2 10 38.7 S (25.8 k )G e h µ != = = " quantum of conductance

If the channel contains 1 electron level, the maximum possible conductance,taking spin degeneracy into account is 02G

This should be contrasted with (Ohm's law)AgL

!=

Can ballistic and ohmic effects be treated in a unified way?

Page 7: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

The standard approach to molecular electronicsfocuses on ballistic transport

Steady state: Landauer formula

The transition probability T is calculated with scattering formulations,i.e. by solving the Lippmann-Schwinger equation

or by using Green’s function techniques.

(ground-state) DFT formulations map the problem into an effectivesingle particle problem making numerical calculation possible

!",k!(r) = !",k!0 (r)+ d3 !r d3 !!r G"

0(r, !r )V( !r , !!r )" !",k!( !!r )

Page 8: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Dynamic evolution:

Starting with the system in thermal equilibrium an electromotive force

is applied !(t)E E = !""

This can be done using the technique of non-equilibrium Green’sfunctions (Keldysh (1964))

In order to be tractable in a finite segment of the device the potentialmust reach a constant value inside the two metallic electrodes

This is an approximation although a good one for practical purposes

It amounts to assuming constant (and different) chemical potentials inan electrically connected system out of equilibrium (due to current flow)

Page 9: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Quantum Master Equations (QME)

• QMEs describe relaxation to equilibrium of a system coupled to aheath bath

• They involve dynamics on a coarse grained time scale (kinetics),possible because on the time scale of the relaxation some details ofthe microscopic dynamics are irrelevant

• The quantum system is open (exchanges of heath with the bath areallowed) and is generally in a mixed quantum state described by adensity operator (matrix)

• Typically they assume that the equilibrium solution is known, it is therelaxation to equilibrium which is not

S

Page 10: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Lindblad QMEHarmonic bath, weak coupling Ve!ph , !C << !S H0 + R +Ve!ph

Jump operators:

Detailed balance:

Page 11: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Lindblad QME with time dependent bias

System relaxes to steady state:

Analogy with semi-classical Boltzmann equation:

field collisions

df f fdt t t

! !" # " #= +$ % $ %! !& ' & ' field collisions

f ft t

! !" # " #= $% & % &! !' ( ' (

( , ; )f f x p t! classical probability distribution

Page 12: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Difficulty (exponentially hard)

is the electronic many-body Hamiltonian

is the electronic many-body density operator

H

S

Can we make this problem tractable?

Map to a fictitious non-interacting system having the same currentevolution of the interacting system

This involves extending TDDFT to dissipative systems (K Burke,RC, R Gebauer, PRL 2005)

Knowing the current evolution we also know the density evolutionvia the continuity equation

Page 13: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Non-interacting QME

!S!t= "

i

!HKS(t),S(t)#

$%&'( + CKSS(t)

Tracing out N - 1 electronic degrees of freedom we obtain anequation for the reduced single-particle density matrix:

m,n label KS (equilibrium) eigenstates

The jump operators are now given by Qnm = cn†cm

Hartree approximation in thecollision operator

Bury what is left out in the KS potential!

Page 14: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

KS QME

!S!t= "

i

!H(t),S(t)#$%

&'( + C S(t)

#$%

&'( S is now single-particle

!Sn,m =!i Hn, p (t)Sp,m! Sn, pH p,m(t)( ) p"

+ !n,m! Sn,m( ) #n, p +#m, p( )Sp, p ! Sn,m # p,n +# p,m( ) 1! Sp, p( )p"

p"

( )2

, 2

( ) 1 ( ) if

( ) ( ) if

e ph mn mn n mn m

e ph nm nm n m

n V m n e e

n V m n e e

! " !

! " !

#

#

$ + <%& = '% >(

1( )1Tn

e!! =

"Implying againdetailed balance

At equilibrium S becomes diagonal and its diagonal element are given bythe Fermi-Dirac distribution, i.e. the finite T generalization of DFT

Page 15: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Canonical vs Grand-canonical

The QME conserves the particle number N, thus cannot describefluctuations of N (canonical ensemble at equilibrium)

It does not allow to treat a system with open boundaries that canexchange electrons with the environment (grand-canonical ensembleat equilibrium)

This implies that in transport situations a whole circuit or somethingmimicking it has to be used

Page 16: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Open and Closed BoundaryConditions

A ring geometry, which allows current flow with close boundaries, can berealized with a proper choice of the gauge

Page 17: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

,!= "#E x! = " #E

,Ac t!= "!

E A c t= ! E

The v-gauge corresponds to a ring geometry in which anelectric current is induced by a magnetic flux

x-gauge

v-gauge

The electrons are then subject to a steady electromotiveforce. Coupling to a heat bath prevent them fromaccelerating indefinitely

Page 18: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

!Sn,m =!i Hn, pE (t)Sp,m! Sn, pH p,m

E (t)( ) p"

+ !n,m! Sn,m( ) #n, p +#m, p( )Sp, p ! Sn,m # p,n +# p,m( ) 1! Sp, p( )p"

p"

The Liouville-Master equation

Here:( )2

0( ) ( ) [ ]2 HXC

p tH t U x V n!

"= + +E E

In the numerical implementation the electric field is systematically“gauged” away to avoid indefinite “growth” of the Hamiltonianwith time. The result is that the effect of the electric field istransferred from the Hamiltonian to the density matrix

R. Gebauer and R.C. (PRB 2004), S. Piccinin, R. Gebauer, RC, K.Burke (in preparation)

Page 19: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

A(t + !t)" A '(t + !t) = A(t)

Gauge transformation

For a finite ring of length L the following condition needs to beimposed to keep S single-valued on the ring

Then involves an additional coarse graining in time but it can bemade as small as required by exploiting Bloch’s theorem

!t

Page 20: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

[ ] [ ],dS i H S Sdt

= ! + C ( ) ( ) ( )Hd r j r j rdt! = "# $ "# $ C

Generalized continuity equation (R. Gebauer and RC, PRL 2004)

The collision current is a quantum effect: collisions that change momentum also changeposition (density distribution).

Because of the collision currentthe power dissipated in the circuitobeys:

The additional resistancecomes from the coupling to thebath and is different fromLandauer’s residual resistivitydipole (both effects howeveroriginate from microscopicinhomogeneity) (Gebauer,Piccinin, RC, CPC 2005)

In actual calculations on small systems it is better to neglect thecollision current that would be unphysically large

Page 21: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Pseudopotential plane wavecalculations on molecular junctions

within DFT-GGA

From S. Piccinin, R. Gebauer, R.C., K. Burke, in preparation

Page 22: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

A 3-atom gold wire

Visualization of the electronic current flow

Calculations using pseudopotentials andplane waves in a supercell geometry

Potential drop in the position gauge

Page 23: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Issues: current contribution due to the bath;effect of dissipation on current characteristics

At sufficiently large dissipative coupling theconductance measured across the “ballistic”junction shows saturation, becoming“independent” of the dissipative coupling

Conductance fluctuationswith the number of atoms inthe wire (as found in NEGFcalculations, but out ofphase with experiment).The conductance in ourcalculation decreases withthe number of atoms in thewire: an ohmic proximityeffect.

Experiments: Smit et al. PRL(2003)

Page 24: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Benzene dithiolate (BDT) between gold slabs

Calculations at saturation for dissipativecoupling. Ref.1: Transiesta calculationreported in:

Page 25: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

A difficulty

Setting aside issues of system size and issues related to the presenceof a fictitious bath, the master equation works well numerically inresonant or near resonant situations when the conductance is relativelylarge. In off-resonant situations when the conductance (due totunneling) is extremely small it is much more convenient to use linearresponse theory

Page 26: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

How do and depend on the electronicproperties of the molecule, the metallic electrodes and thechemical contacts?

!

Zero bias conductance

Experiments on insulating molecules at weak bias

Why such behavior?

Page 27: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

At zero bias the conductance is convenientlycalculated from Linear Response Theory

In the static limit within the adiabatic approximation of TDDFT

Thus only an equilibrium Kohn-Sham calculation is required in thislimit

Page 28: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

It is convenient to model the system as a strictly periodic molecularchain (an infinite polymer) strongly perturbed by the metallic leads

Page 29: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Exact asymptotic formula (E. Prodan and R.C., PRB (2007))

Link between electronic structure and experiment:

Page 30: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Agreement between theory andexperiment is good ….but

How do the results depend on thenumerical and physicalapproximations?

Ref.1: Venkataraman et al, Nanolett.(2006)

Ref.2: Chen et al., JACS (2006)

Ref.27: Fagas and Greer,Nanotechnology (2007)

From Prodan and Car, Nanolett. (2008)

Page 31: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Phenyl Chains (E. Prodan and RC, PRB 2009)

In this case the same approach leads to conductances that are~ 1 order of magnitude larger than experimental values: why?

The problem has to do with the Kohn Sham levels and particularlythe alignment of the molecular levels with the Fermi level of theelectrodes in presence of a relatively small KS gap in the molecule

Page 32: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

(Some) Challenges

• Level alignment. Use GW approaches: at the static COHSEXlevel one still has a Hamiltonian formulation and calculationsshould be feasible, particularly for linear responsecalculations...

• Dissipation effects (with “realistic” phonon and el-phcouplings): in principle possible but require large systems(feasible with simplified electronic structure models - shouldallow to study the T dependence

• Approach to equilibrium not just steady state

• Beyond Markov approximation

• More subtle correlation effects (e.g. Kondo problem): how todeal with them?

• Polaronic effects

.......

Page 33: Tutorial on Electronic Transport T… · Level quantization is a source of resistance. Ballistic (dissipationless) conductance 2 1 G 0=eh=38.7 µS=(25.8 k")!quantum of conductance

Acknowledgements

Collaboration with K. Burke, E. Prodan, R. Gebauer and S. Piccinin

Funding from DOE and NSF