U niversity seminar series at Stanford on "Bio-applications of Nanotechnologies" Chairman, Sub-committee on Nano-Technology Committee on Industrial Technology

University seminar series at Stanford on "Bio-applications of Nanotechnologies"

Chairman, Sub-committee on Nano-TechnologyCommittee on Industrial Technology

KEIDANREN

Japanese Industry’s Visionand

Recent Activities of Nanotechnologies

Japanese Industry’s Visionand

Recent Activities of Nanotechnologies

18 April 2002

Michiharu Nakamura

日立の概要Reform of Japanese social systems

The Government

- recognizes that “Science and Technology” is one of the main driving forces for economic growth and the progress of society

- is trying to promote structural reform by introducing deregulation, privatization of national agencies, etc.

- are also introducing new management systems

- is trying to recover from the current recession

Universities

Large companies

All Rights Reserved,Copyright (C) 2002 Hitachi,Ltd.

日立の概要

- allocates S&T resources with the highest priority given to

To enhance science and technology in Japan

was established in Jan. 2001 to play a role of a source of wisdom to support the Prime Minister.

The Council for Science and Technology Policy

“The 2nd Science and Technology Basic Plan”

(1) Life Sciences, Health and Medical Treatment(2) Information and Telecommunications(3) Environmental Science(4) Nanotechnology and Materials(5) Others: New energy sources, manufacturing technologies, social infrastructure, new frontier science


1.Prof. Ryogo Kubo （ 1962 ）（ J. Phys. Soc. Jpn. 17 (1962) 975 ） Discovery of “Kubo-effect” in sub-micron size metals 　 New physics for nano-scale metal/semiconductor　 “ Coulomb-blockade effect” “SET”2.Prof. Ryoji Ueda （ 1970`s ） New physics for ultra fine particles Direct observation of structural changes in ultra-fine particles (ERATO: Hayashi project) 3.Prof. Norio Taniguchi （ 1974 ） Inroduced the concept of nanotechnologies at ICPE4.Prof. Hiroyuki Sakaki （ 1975 ～）　　 Artificially fabricated semiconductor nano-structures, such as ultra-thin films, quantum wires, quantum boxes


日立の概要Japanese universities’ pioneering works on nano-technologies


New science fields in

physics and chemistry

has been established　 - Semiconductor/metal transition

　 - Higher conductance than metals

　 - Large magnetic resistance

Progress in fabrication

technologies

Discovered by Dr. Sumio Iijima (1991)

（ Under the permission of Mr. Sone, NEC ）

Carbon nanotube


n-Plan 21n-Plan 21(2001.3.27)

proposed by KEIDANREN

Exploratory Research

R&D strategy for nano-technology in Japan

- Create technical innovations in IT, Biotechnology, Energy/environment, and materials- Focus R&D resources more effectively to expand impact on industry and society

Challenge to the Future Projects

Flagship Projects



Next-generation semiconductor technology　　　　 ASUKA (2001 - 5 years) 100 - 70 nm MIRAI (2001 - 7 years) 70 - 50 nm HALUKA (2001 - 3 years)Terabit-class information storage technologyNew devices for Peta-b/s communication

R&D focused on practical applications andindustrialization of them within 5 to 10 years

Examples

Flagship Projects



Challenge to the Future Projects

New materials by controlling nano-structuresMedical/healthcare by fusing biotechnology andnano-systemsMeasurement with accuracy below nm scale Nano-scale fabrication Simulation

R&D to create revolutionary fundamentaltechnologies to support industry

Examples



New physicsNew chemistryNew scienceNew theories and methods of analysis and simulation

In-depth research of nano-scale particlesand nano-structure materials

Examples

Exploratory Research

100 nm

10 nm

1 nm

1970 200019901980 2010

Fab

ricati

on

siz

e

1 m

10 m

0.1 nm

Semiconductordevices

Nu

mb

er

of

ato

ms/b

it

1

106

108

104

102

1010

Magnetic/Opticaldisks

To makeBreakthrough by Nanotechnology

Red Brick Wall

DNA

Hydrogen atom

Protein molecule

Top down

Bottom up Fusion


What is nonotechnology?

IT and Electronics

・ Electronic Devices・Magnetic Devices・ Optical Devices

Examples:・Mobile Computer・ Information Storage with 103 Times Larger Capacity・ Broad-Band Internet・ Sheet Display・ Quantum Computer

Nanotechnology asthe fundamentals

Revolutionary improvement in material properties

Measurement, Control, fabrication and Simulationin atomic / molecular-level scale

New Materials

Environment and Energy Health and Welfare

Nano-technology for IT and ElectronicsNano-technology for IT and Electronics

ApplicationField


日立の概要50nm CMOS technology

50 nm

Si-sub.

CoSi2

SiN

SiO2

Spacer

Gate

TEM photograph

1.0

1.0

1.2

1.4

0.5 1.5Rela

tive S

peed

Voltage(V)

High Speed PerformanceHigh Speed Performance

ConventionalNewly Developed

IEDM 2001 (Hitachi Central Research Lab.)


Gate length/width:

Tunnel oxide thickness:Interlayer dielectric film:

0.5/ 3μm

7 nm15nm

0.1μm

Si nano dots: diameter ~10nm

T. Ishii et al., IEDM, 2000, p.305

日立の概要

Non-volatile memory cell with Si nano dots

Experimentally fabricated device


Semiconductor technology in the road mapSemiconductor technology in the road map

1999 2001 2004 2008 2011 2014Process Generation (nm) 180 130 90 60 40 30

DRAM Scale (bit) 256M 512M 1G 6G 16G 48G

Main Requirements to Achieve the Above Goal

Gate Insulation (nm) 1.9-2.5 1.5-1.9 0.8-1.2 0.6-0.8 0.5-0.6k of Layer Insulation 3.5-4.0 1.6-2.2 1.5 <1.5

Nanotechnology EraTechnological breakthrough is required.

Year

Prospective technology in research exists.No prospective technology has been found yet.

Red Brick Wall(ITRS 2000 Update Edition)

MPU Gate Length (nm) 120 90 65 40 30 20

Pattern Deviation(nm)65 31 26 18 13Alignment Accuracy(nm)

13 4 3 2459.0 6.3

1.2-1.5<1.52.7-3.5


Research and development targetsResearch and development targets

●High Permittivity (high-k) Gate Oxide Film and Its Processing Technology and Related Measurement and Analysis Technology●Low Permittivity (low-k) Interlayer Insulation and Its Processing Technology and Related Measurement and Analysis Technology●Lithography Mask and Related Measurement Technology●New Device and Process Technology●System Architecture

Action in both Practical Technology Development and Analytical R&D Is Required to Establish System on Chip (SoC) Technology.


MOS devices (Goal: Planar MOS breakthrough) MOS devices (Goal: Planar MOS breakthrough)

・ High-k Gate Insulation Material Development 　→ U.S. and Europe are leading. Japan is launching Asuka Project.・ Novel Structure Devices → Research on Vertical MOS and SOI

Necessity of High-k Gate Insulation Film Development

(Year)

SiO

2-E

qu

ival

ent

Gat

e In

sula

tion

Th

ick

nes

s (n

m)

1999 2002 2005 2008 2011 20140

1.0

2.0

3.0

SiO2

SiON, Si3N4, Al2O3

κ 10-20)

Metal Oxide(> )

Metal Oxide

Leak Current Suppression

Source Drain

Gate Insulation

< 2 nm

～ 30 nm

New gate insulation filmdevelopment is necessary.

ZrO2 HfO2

Pr2O3

20κ

(


Memory density trend in memory devicesMemory density trend in memory devices

+30% a year

Optical Disk

Thermal Fluctuation LimitNear Field Optics

Patterned Media

Unit Memory Size1m

DRAM DVD-ROM MagneticDisk

10-1

10-4

10-5

10-6

10-7

1

Magnetic Disk

(Year)1970 1980 1990 2000 2010

104

10 3

102

10

1

10 -1

10-2

Are

al M

emor

y D

ensi

ty (

Gb

/in2

)

+100% a year

+40% a year

SemiconductorMemory (DRAM)10-4

10-3

10-5

PerpendicularMagnetic Recording

(Conference Presentation)

10-3

10-2

Opto-Magnetism

ManipulationAtomic

Are

al M

emor

y D

ensi

ty (

Gb

/mm

2)

10


All Rights Reserved Copyright (C) 2001 Hitachi, Ltd.

LongitudinalLongitudinal

Under layerUnder layerMagnetic fluxMagnetic flux

Single-pole-typeSingle-pole-type writerwriter

Main poleMain poleAuxiliary Auxiliary polepole

Recording layerRecording layer

Ring-type Ring-type writerwriterShield Shield

layerlayer

GMR GMR elementelement

Magnetic fluxMagnetic flux

PerpendicularPerpendicular

From longitudinal to perpendicular



Main PoleMain Pole

Auxiliary Pole / Upper ShieldAuxiliary Pole / Upper Shield

Bottom ShieldBottom Shield

GMRGMRSensorSensor

CoilCoil

■ ■ SPT WriterSPT Writer Main pole Main pole ：： Tww = 250 nmTww = 250 nm PT= 400 nmPT= 400 nm Bs = 16 kGBs = 16 kG Aux. pole :Aux. pole : PT = 2500 nmPT = 2500 nm Bs = 10 kGBs = 10 kG

■ ■ GMR readerGMR reader　　　　　　 Twr = 200 nm Twr = 200 nm 　　　　　　 Gs = 80 nmGs = 80 nm

ABSABS

（（ Cross sectional viewCross sectional view ））SPT/GMR-merged perpendicular head


Collaboration with Tohoku University and AITCollaboration with Tohoku University and AITpartly carried out under the ASET program, NEDOpartly carried out under the ASET program, NEDO


7.5×7.5μm7.5×7.5μm

Recorded bit patterns (MFM)



Nano-glass material for optical memory

Response and Refractive index shift by Laser irradiation

Response and Refractive index shift by Laser irradiation

Elapsed time （ nsec ）

100 150 2005000

2

4

2.75

2.65

2.55

Δ ｎ / ｎ＝５ . ５％

-50

irradiation ON OFF

Ref

ract

ive

ind

ex n

Las

er in

ten

sity

(m

W)

Wave length： 650nm

Large refractive index shift is caused by interaction between nano-particles and amorphous grain(glass).

（ By Naito, Hitachi）Micro-structure of nano-glass

50nm

Amorphous grain（grass）

Co3O4－ Nano structure of Glass thin film(TEM photograph）

Co3O4－ Nano structure of Glass thin film(TEM photograph）

Number of particles ： 311Mean Diameter ｒ： 13.3nmDeviation δ ： 3.97nmVariance δ/ ｒ： 29.8％Pitch of each grain ： 1nm

Number of particles ： 311Mean Diameter ｒ： 13.3nmDeviation δ ： 3.97nmVariance δ/ ｒ： 29.8％Pitch of each grain ： 1nm

Co3O4 Columnar nano-particles


Blue laser beam

Improvement of Recording Density by using Super-Resolution Film more than 1 Tb/in⇒ 2

Improvement of Recording Density by using Super-Resolution Film more than 1 Tb/in⇒ 2

Reflective layer

20% nsecTarget

Glass SubstrateGlass Substrate

Research targetsResearch targets

10nsec5.5 ％ Present

ResponseTime

Δ ｎ / ｎSuper-resolution film

Super-resolution film

Recording layer

High-density optical memory based onnew super-resolution film


Nano-optical devices by photonic crystalSharp bend of optical path

Perfect band gap 2-D crystal(J. D. Joannopoulous, Nature , 386, 143 (1997))

Miniaturization ofintegrated optical circuit

Optical field

Optical path by photonic crystal defect

Controllability of light propagation speed based on coupling constant shift

(K. Hosomi and T. Katsuyama, PECS3 (2001))

Efficient control of high speed light-pulse

WDM Add/Drop module by photonic crystal - Miniaturized integrated optical circuit

Demultiplexer based on micro-resonators

Optical bend pathDispersion compensator based on coupling defect

Micro laser

Modulater based on micro-resonators

To receivers

Multiplexerλ1・・ λn

λk

λq

～ 30μm ～20

μm

Towards gaining further optical property



Bio Nano-technology for Medical & Welfare

Bio Nanotechnology

・ Medical sensors・ Gene sensors・ DNA/Protain chips

Example・ Highly sensitive analysis of cancer cell・ High speed DNA separation chip・ Protein chips for drug screening・ Drug delivery system・ Anesthesia by using remote micro-manipulator


Nanotechnology asthe fundamentals


Measurement, Control, fabrication and Simulationin atomic / molecular-level scale

New Materials

Environment and Energy IT, Electronics

ApplicationField

Order-made medicine

Gene information 3 billion

･････GATCCGAGATGCATGACT ･･････

･････ CTAGGCTCTACGTACTGA ･･････Cell 60 trillion

Gene 40k types

DNA: Life informationDNA: Life information

Genome-based drug

Gene/Protein Function

Study on Protein Structure

・ 100k types・ 100k types ・ interact each other・ interact each other

Protein: Life phenomenonProtein: Life phenomenon

Gene Analysis ＆ ProteomicsGene Analysis ＆ Proteomics

Era of proteome


IncidentLight (white)

ReflectedLight

Optical Near-Field

Gold Thin Film (20nm)

Intensity

Polymer Substrate

Wavelength

Polymer Sphere (110nm)

Intensity

Wavelength

Gold Particle (20nm)

SEM micrograph of the gold particle monolayer

Resonant absorption of light. The wavelength of the absorption maximum depends on the refractive index of the surrounding.

Reflection from nanoparticles

Optical bio-sensing with cap-shaped Au nanoparticles 1


Basic nano-tech. ： Measurement ・ Simulation

New materials Environment/ Energy

IT, Electronics Medical, Welfare

Atomic,Molecularscale measurement/control/fabrication/simulation

・ Ultra high voltage SEM・ STM, AFM・ CD-SEM・ Nano-scale machining by self-organization ・ Electron beam lithography・ Multi-scale simulation

BasicNanotechnology



electric・ magnetic・ optical・ strength・ thermal


1M Volt holography electron microscope

1MV Holography Electron Microscope

49.8 pm 49.8 pm

49.8 pm 0.1nm

Super high voltage electron microscope was developed. World record （ 49.8 pm) of resolution power for crystal lattice was achieved.

Left: Crystal lattice stripes of Au thin film,pitch of which is 49.8 pm, Light: the modelof Au crystal unit lattice

CREST/SORST、 Collaboration with Univ. of TokyoAll Rights Reserved,Copyright (C) 2002 Hitachi,Ltd.

日立の概要


Thank you. . .

Documents

U niversity seminar series at Stanford on "Bio-applications of Nanotechnologies" Chairman, Sub-committee on Nano-Technology Committee on Industrial Technology