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DatasheetSCS205KG SiC Schottky Barrier Diode

*1 Tc=150°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C

3) High-speed switching possible

Outline

Inner circuit

Packaging specifications

TO-220AC

2) Reduced temperature dependence

1200V

5A

VR

IFQC

Features

17nC

1) Shorter recovery time

A

W

Symbol

Construction

Silicon carbide epitaxial planer type

Parameter

V

V

A

A

A

VRM

Tube

-

Type

Packaging

Reel size (mm)

C

SCS205KG

Basic ordering unit (pcs)

Tape width (mm) -

50

Marking

Packing code

UnitValue

Repetitive peak forward current

Total power disspation

Junction temperature

VR

IF

IFSM

IFRM

PD

1200

1200

5*1

25*5

88*6

23*2

Absolute maximum ratings (Tj = 25°C)

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Tj

Tstg

175

55 to 175Range of storage temperature

87*3 A

18*4

°C

°C

(1) Cathode(2) Cathode(3) Anode

(1)

(2) (3)

(3)(2)

(1)

1/4 2017.06 - Rev.C

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DatasheetSCS205KG

-

IF=5A,Tj=25°C

Symbol

-

VF

VR=1200V,Tj=150°C -

Typ.Unit

Max.Min.

-

Values

1.6

Electrical characteristics (Tj = 25°C)

1200VDC IR =0.1mA

Parameter Conditions

DC blocking voltage

A

VR=1200V,Tj=25°C

V

5

1.9IF=5A,Tj=175°C

VR=1200V,Tj=175°C

V

100-

-

-

1.4

-

-

Switching time tc - 15 -VR=800V,di/dt=500A/s ns

VR=800V,f=1MHz -

VR=800V,di/dt=500A/s

-

17 --

pF21

Forward voltage

Reverse current

Total capacitance

Total capacitive charge nC

-65

IR

C

Qc

270 -

V

A

pFVR=1V,f=1MHz

40 - A

IF=5A,Tj=150°C - 1.8 - V

Thermal characteristics

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Thermal resistance Rth(j-c) - - 1.5 1.7 °C/W

2/4 2017.06 - Rev.C

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DatasheetSCS205KG

Electrical characteristic curves

　

0

1

2

3

4

5

6

7

8

0.0 0.5 1.0 1.5 2.0 2.5

Ta=125ºC

Pulsed

Ta=175ºC

Ta=75ºC

Ta=25ºC

Ta= 25ºC

Fig.1 VF - IF Characteristics

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Fig.2 VF - IF Characteristics

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF [V]

Fig.3 VR - IR Characteristics

Rev

erse

Cur

rent

: I

R[

A]

Reverse Voltage : VR [V]

Fig.4 VR-Ct Characteristics

Cap

acita

nce

Bet

wee

n T

erm

inal

s : C

t [p

F]

Reverse Voltage : VR [V]

0.001

0.01

0.1

1

10

100

0 200 400 600 800 1,000 1,200

Ta=125ºC

Ta=175ºC

Ta=75ºC

Ta=25ºC

Ta= 25ºC

10

100

1,000

0.01 0.1 1 10 100 1000

Ta=25ºCf=1MHz

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5

Ta=125ºC

Pulsed

Ta=175ºC

Ta=75ºC Ta=25ºC

Ta= 25ºC

3/4 2017.06 - Rev.C

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DatasheetSCS205KG

Electrical characteristic curves

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta=25ºCSingle Pulse

0

20

40

60

80

100

0 25 50 75 100 125 150 175

0

5

10

15

20

25

30

0 25 50 75 100 125 150 175

Duty=0.1

Duty=0.2

Duty=0.5

Duty=0.8D.C.

0

10

20

30

40

0 2 4 6 8 10

Duty=0.1

Duty=0.2Duty=0.5

Duty=0.8

D.C.

Fig.5 Thermal Resistance vs. Pulse Width

The

rmal

Res

ista

nce

: R

th(j

-c)

[ºC

/W]

Pulse Width : Pw [s]

Fig.6 Power Dissipation

Pow

er D

issi

patio

n [W

]

Case Temperature : Tc [ºC]

Fig.7 Ip-Tc Derating Curve

Pea

k F

orw

ard

Cur

rent

: I P

[A]

Case Temperature : Tc [ºC]

Fig.8 Io-Pf Characteristics

Pow

er D

issi

patio

n [W

]

Average Rectified Forward Current : Io [A]

4/4 2017.06 - Rev.C

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DatasheetDatasheet

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ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

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