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Document Number: 91321 www.vishay.comS10-1139-Rev. C, 17-May-10 1

Power MOSFET

IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix

FEATURES• Halogen-free According to IEC 61249-2-21

Definition• Dynamic dV/dt Rating• Surface Mount (IRLR014, SiHLR014)• Straight Lead (IRLU014, SiHLU014)• Available in Tape and Reel• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• Fast Switching• Compliant to RoHS Directive 2002/95/EC

DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRLU, SiHLU series) is for through-holemounting applications. Power dissipation levels up to 1.5 Ware possible in typical surface mount applications.

Notea. See device orientation.

Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12).c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.d. 1.6 mm from case.e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARYVDS (V) 60

RDS(on) (Ω) VGS = 5.0 V 0.20

Qg (Max.) (nC) 8.4

Qgs (nC) 3.5

Qgd (nC) 6.0

Configuration Single

N-Channel MOSFET

G

D

S

DPAK(TO-252)

IPAK(TO-251)

G D SS

D

G

D

ORDERING INFORMATIONPackage DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)Lead (Pb)-free and Halogen-free SiHLR014-GE3 - SiHLR014TRL-GE3 SiHLU014-GE3

Lead (Pb)-freeIRLR014PbF IRLR014TRPbFa IRLR014TRLPbFa IRLU014PbFSiHLR014-E3 SiHLR014T-E3a SiHLR014TL-E3a SiHLU014-E3

SnPbIRLR014 IRLR014TRa IRLR014TRLa IRLU014SiHLR014 SiHLR014Ta SiHLR014TLa SiHLU014

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 60

V Gate-Source Voltage VGS ± 10

Continuous Drain Current VGS at 5.0 VTC = 25 °C

ID7.7

ATC = 100 °C 4.9Pulsed Drain Currenta IDM 31

Linear Derating Factor 0.20W/°C

Linear Derating Factor (PCB Mount)e 0.020Single Pulse Avalanche Energyb EAS 27.4 mJ

Maximum Power Dissipation TC = 25 °C PD

25W

Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5

Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150

°C Soldering Recommendations (Peak Temperature) for 10 s 260d

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 913212 S10-1139-Rev. C, 17-May-10


Notea. When mounted on 1" square PCB (FR-4 or G-10 material).

Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGSPARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA - - 110

°C/WMaximum Junction-to-Ambient (PCB Mount)a RthJA - - 50

Maximum Junction-to-Case (Drain) RthJC - - 5.0

SPECIFICATIONS TJ = 25 °C, unless otherwise notedPARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA 1.0 - 2.0 V

Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25

μA VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250

Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 4.6 Ab - - 0.20

ΩVGS = 4.0 V ID = 3.9 Ab - - 0.28

Forward Transconductance gfs VDS = 25 V, ID = 4.6 A 3.4 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

- 400 -

pFOutput Capacitance Coss - 170 -

Reverse Transfer Capacitance Crss - 42 -

Total Gate Charge Qg

VGS = 5.0 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b

- - 8.4

nC Gate-Source Charge Qgs - - 3.5

Gate-Drain Charge Qgd - - 6.0

Turn-On Delay Time td(on)

VDD = 30 V, ID = 10 A, Rg = 12 Ω, RD = 2.8 Ω, see fig. 10b

- 9.3 -

nsRise Time tr - 110 -

Turn-Off Delay Time td(off) - 17 -

Fall Time tf - 26 -

Internal Drain Inductance LD Between lead,6 mm (0.25") from package and center of die contactc

- 4.5 -nH

Internal Source Inductance LS - 7.5 -

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode

- - 7.7A

Pulsed Diode Forward Currenta ISM - - 31

Body Diode Voltage VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb - - 1.6 V

Body Diode Reverse Recovery Time trrTJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb

- 65 130 ns

Body Diode Reverse Recovery Charge Qrr - 0.33 0.65 μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G



TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature



Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area



Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Pulse width ≤ 1 µsDuty factor ≤ 0.1 %

RD

VGS

Rg

D.U.T.

5 V

+-

VDS

VDD

VDS

90 %

10 %VGS

td(on) tr td(off) tf



Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

Rg

IAS

0.01 Ωtp

D.U.T.

LVDS

+

-VDD

5 V

Vary tp to obtainrequired IAS

IAS

VDS

VDD

VDS

tp

QGS QGD

QG

VG

Charge

5 V

D.U.T.

3 mA

VGS

VDS

IG ID

0.3 µF0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-



Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91321.

P.W.Period

dI/dt

Diode recoverydV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-appliedvoltage

Reverserecoverycurrent

Body diode forwardcurrent

VGS = 10 Va

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.Period

+

-

+

+

+-

-

-

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by Rg

• Driver same type as D.U.T.• ISD controlled by duty factor “D”• D.U.T. - device under test

D.U.T.Circuit layout considerations

• Low stray inductance• Ground plane• Low leakage inductance

current transformer

Rg

Notea. VGS = 5 V for logic level devices

VDD

Document Number: 91344 www.vishay.comRevision: 15-Sep-08 1

Package InformationVishay Siliconix

TO-252AA (HIGH VOLTAGE)

Notes1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but

including any mismatch between the top and bottom of the plastic body.3. The package top may be smaller than the package bottom.4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum

material condition. The dambar cannot be located on the lower radius of the foot.

E

b3

L3

L4

b2

e

b

D H

E1

D1

A

c2

L1

L2

c

A1

Lθ

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

E 6.40 6.73 0.252 0.265

L 1.40 1.77 0.055 0.070

L1 2.743 REF 0.108 REF

L2 0.508 BSC 0.020 BSC

L3 0.89 1.27 0.035 0.050

L4 0.64 1.01 0.025 0.040

D 6.00 6.22 0.236 0.245

H 9.40 10.40 0.370 0.409

b 0.64 0.88 0.025 0.035

b2 0.77 1.14 0.030 0.045

b3 5.21 5.46 0.205 0.215

e 2.286 BSC 0.090 BSC

A 2.20 2.38 0.087 0.094

A1 0.00 0.13 0.000 0.005

c 0.45 0.60 0.018 0.024

c2 0.45 0.58 0.018 0.023

D1 5.30 - 0.209 -

E1 4.40 - 0.173 -

θ 0' 10' 0' 10'

ECN: S-81965-Rev. A, 15-Sep-08DWG: 5973

Document Number: 91362 www.vishay.comRevision: 15-Sep-08 1

Package InformationVishay Siliconix

TO-251AA (HIGH VOLTAGE)

Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the

outermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.

Basemetal

Plating b1, b3

(b, b2)

c1(c)

Section B - B and C - C

D

A

c2

c

Lead tip

5

5

(Datum A)

Thermal PADE1

4D1

View A - A

A1A

A

CSeatingplane

C C

B B

θ1θ2

B

4

4

4

3

5

L1

L

L3

3 x b2

3 x b

3

b4

E

2 x e 0.010 C BM A0.25

0.010 BA0.25L2

A

CM

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -

A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265

b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -

b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC

b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380

b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090

b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050

c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060

c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'

c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'

D 5.97 6.22 0.235 0.245

ECN: S-82111-Rev. A, 15-Sep-08DWG: 5968

Document Number: 91000 www.vishay.comRevision: 11-Mar-11 1

Disclaimer

Legal Disclaimer NoticeVishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any otherdisclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose orthe continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and allliability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particularpurpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typicalrequirements that are often placed on Vishay products in generic applications. Such statements are not binding statementsabout the suitability of products for a particular application. It is the customer’s responsibility to validate that a particularproduct with the properties described in the product specification is suitable for use in a particular application. Parametersprovided in datasheets and/or specifications may vary in different applications and performance may vary over time. Alloperating parameters, including typical parameters, must be validated for each customer application by the customer’stechnical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainingapplications or for any other application in which the failure of the Vishay product could result in personal injury or death.Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agreeto fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses anddamages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishayor its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel toobtain written terms and conditions regarding products designed for such applications.

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