7/30/2019 VLSI Design ECE a Internalexam

1/2

SUN COLLEGE OF ENGINEERING AND TECHNOLOGY

BE Degree Internal Examination-1, Feb - 2013

Sixth Semester

Electronics and Communication Engineering

EC64 VLSI Design

Time: 3Hours Maximum: 100Marks

Answer All Questions

PART A (10x2=20marks)

1. What is micron rule & lambda design rule?

2. What are the advantages of Silicon On Insulator process

3. What is channel length modulation?

4. What is meant by Pass transistors?

5. What are the advantages of Transmission gates?

6. Define noise margin.

7. What is meant by foot network?

8. What is meant by skewed gates?

9. What is meant by Tri state inverter?

10. Realize the NAND Operation using CMOS Inverter logic.

PART B (16x5=80marks)

11. i) Explain the DC transfer characteristics of CMOS inverter with necessary diagram.(10)ii) Explain how body effect affects the threshold voltage (6)

12.i) Explain in detail about p-well & n-well fabrication process. (8)

ii) Derive the threshold voltage equation for the MOS transistor (8)

13.i) Explain power dissipation in the CMOS gates (8)

ii) Explain latch up problems and how it can be rectified in CMOS and tunneling

Phenomenon. (8)

14.i) Explain in detail with necessary diagram about various sequencing methods of static

circuit? (6)

ii) Explain the concept of synchronizer? (6)

iii) Implement the logic (A+B)(C+D) (4)

15. i) Explain about the various types of static CMOS design (8)

ii) Explain about the various types of dynamic CMOS design (8)

7/30/2019 VLSI Design ECE a Internalexam

2/2

SUN COLLEGE OF ENGINEERING AND TECHNOLOGY

BE Degree Internal Examination-1, Feb - 2013

Sixth Semester

Electronics and Communication Engineering

EC64 VLSI Design

Time: 3Hours Maximum: 100Marks

Answer All Questions

PART A (10x2=20marks)

1. What is micron rule & lambda design rule?

2. What are the advantages of Silicon On Insulator process

3. What is channel length modulation?

4. Write the equation for threshold voltage Vt of a MOS transistor?

5. What is body effect?

6. Define transconductance of a MOS transistor?

7. What is stick diagram?

8. What is pass transistor?

9. What is pull up and pull down transistor?

10. Realize the NAND Operation using CMOS Inverter logic.

PART B (16x5=80marks)

11. i) Explain the DC transfer characteristics of CMOS inverter with necessary diagram.(10)

ii) Explain how body effect affects the threshold voltage (6)

12.i) Explain the CMOS process enhancement techniques in detail. (8)

ii) Derive the threshold voltage equation for the MOS transistor (8)

13.i) Explain about various ideal I-V effects in detail. (8)

ii) Explain the layout design rules in detail. (8)

14.i) Explain in detail with necessary diagram about various sequencing methods of static

circuit? (6)

ii) Explain the concept of synchronizer? (6)

iii) Implement the logic A.(B+C)+(D.E) (4)

15. i) Explain about the various types of static CMOS design (8)

ii) Explain about the various types of dynamic CMOS design (8)