Upload
obelia
View
45
Download
0
Tags:
Embed Size (px)
DESCRIPTION
Weekly Group Meeting Report. Renjie Chen Supervisor: Prof. Shadi A. Dayeh. Part I Literature Review. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires. Experimental Details . SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is - PowerPoint PPT Presentation
Citation preview
Weekly Group Meeting Report
Renjie ChenSupervisor: Prof. Shadi A. Dayeh
2
Integrated Electronics and Bio-interfaces Lab
/14
Part I
Literature Review
3
Integrated Electronics and Bio-interfaces Lab
/14
Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires
Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305
Experimental Details • SiNWs were synthesized by catalytic CVD growth, and the predominated orientation is <111>• Ni pads were defined by EBL, and the TEM samples were prepared on the SiNx membrane• Annealing was done in cold-wall CVD, with Ar atmosphere and pressure of 2 x 10 -4 mbar
NiSi2 (111) || Si (111)NiSi2 [111] || Si [111]
Stress induced lowering of the diffusion coefficients
4
Integrated Electronics and Bio-interfaces Lab
/14
Time-Dependent Study
• LNixSiy follows a square root dependence with annealing time
• LNixSiy is significantly shorter for oxidized NWs at any given time >5 min
• Two type of measurements give comparable results within the experimental error
Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305
5
Integrated Electronics and Bio-interfaces Lab
/14
Diameter-Dependent Study
• LNixSiy for these <111> orientated SiNWs increases for decreasing NW diameter, which can be fitted by an increase square root dependence.
• This indicate that the Ni flux through the silicided NW is dominated by surface diffusion.
Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305
6
Integrated Electronics and Bio-interfaces Lab
/14
Prolonged Ni Silicidation
Propagating Interface
Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305
7
Integrated Electronics and Bio-interfaces Lab
/14Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowiresOgata, K.; Sutter, E.; Zhu, X.; Hofmann, S. Nanotechnology 2011, 22 (36), 365305
Calculations
8
Integrated Electronics and Bio-interfaces Lab
/14
Part II
Experimental Report
9
Integrated Electronics and Bio-interfaces Lab
/14
Time-dependent Anneal Study
Anneal Temp Fin Width Time Sequence
250’C 30nm, 40nm, 50nm, 60nm, 70nm, 80nm,
90nm,100nm, 150nm, 200nm, 300nm, 500nm
5min, 10min, 20min, 40min, 60min, 90min
300’C 30s, 2min, 5min, 8min, 10min, 20min
Sample 1 for 250’C Test Sample 2 for 300’C Test
10
Integrated Electronics and Bio-interfaces Lab
/14
Sample 1 for 250’C Test Sample 2 for 300’C Test
30nm Fin [110] 30nm Fin [110]
11
Integrated Electronics and Bio-interfaces Lab
/14
On the Same Sample
4 min
300 ‘C Anneal Test
6 min 8 min
10 min 15 min 20 min
12
Integrated Electronics and Bio-interfaces Lab
/14
Time Dependent 300’C, Fin [110], width ~ 30nm
Fin-width Dependent 300’C, 5min, Fin [110]
13
Integrated Electronics and Bio-interfaces Lab
/14
RTA Profile
150’C
300’C
5 s 30 s
250’C
14
Integrated Electronics and Bio-interfaces Lab
/14
Plan
1. I still have 1 sample with 10units, that could be used for the time dependent annealing study
2. Work on the neural probe samples once receiving them
15
Integrated Electronics and Bio-interfaces Lab
/14
Thank youQ&A