What is ultraviolet light? - Hamamatsu

UVCONTENTS

P.2

P.4

P.5

What is UV ?

Features of Hamamatsu’s devices for UV detection

Lineup

Product information

Feb. 2021

- Si photodiodes P.6 - 11

- Si APD P.12 - 13

- CCD area image sensors P.14 - 15

- CMOS linear image sensors P.16 - 17

- Mini-spectrometers P.18

Devices for UV Detection

What is ultraviolet light?Visible light, meaning light visible to the human eye, has a spectral range of approximately 400 to 700 nm. Light with shorter wavelengths is called ultraviolet light (UV). Ultraviolet light is used in a wide range of applications as light sources and detection sensors, from industries fields such as semiconductor manufacturing/inspection and food processing, to familiar places such as fire alarms and skin care against UV. In recent years, ultraviolet light has attracted attention as a key technology for sterilization and inactivation of the novel coronavirus. It is expected that UV technologies will become increasingly popular in the future.Hamamatsu provides a wide range of detectors with features such as UV high sensitivity and high UV resistance by opto-semiconductor technology amassed over many years.

Spectral response in UV region (typical example)

Features of our devices for UV detection

Normal silicon sensors can detect ultraviolet light, but some ultraviolet light is absorbed as it passes through window material and packages. Hamamatsu has improved conversion efficiency by adopting a chip structure suitable for ultraviolet light detection. By adopting a window material that easily transmits ultraviolet light and a package without window material, we have realized a high sensitivity in the ultraviolet region.

Feature 1 High sensitivity in UV region

Changes to spectral sensitivity due to UV light irradiation

[ CMOS linear image sensors S10121 to S10124 series (-01) ]

0.04

0.06

0.08

200 220 240 260 280 300

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

0

0.12

0.10

0.02

(Ta=25 °C)

General CMOS image sensor

S10121 to S10124 series (-01)

KMPDB0628EA KSPDB0355EA

[ Si photodiode S12698 series ]

Generally, resin that generates outgas, deteriorating sensitivity of the chip, is used for adhesives such as window materials and chips, in a silicon sensor. Hamamatsu uses a resin-free package to reduce generation of outgas and realize high resistance to ultraviolet light exposure.

Feature 2 High UV resistance

Rate

of c

hang

e (%

)

Wavelength (nm)

(Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance: approx. 70 mm, irradiation time: 1000 h)

30190 300 400 500 600

110

100

90

80

70

60

50

40

S12698 series

Conventional type

2

Hamamatsu has established an integrated production system in our own factory, from the design to the assembly and inspection of optical semiconductor devices.This is why we are flexible and offer products customized according to customers’ requests.Customization examples include adding filters on window materials, tiling chips into 1D or 2D arrays, segmenting a detector’s photosensitive area, changing the package shape, and adding an electronic cooling element.

Feature 3 "Flexibility" that can be achieved by consistent in-house production

DIP type (built-in TE-cooler)

Surface mount type

CCD image sensor S10420-1004-01

CCD area image sensor S12101

Pixel size: 14 × 14 μmNumber of pixels: 1024 × 16

Customization examples

Window material

Choose from quartz, sapphire, no windows, and more. We can also form filters on the window material.

Spectral response of image sensor for each window material

Image sensor with filter on window material

Photodiode with band-pass filter

Choose from DIP (Dual Inline Package) type, surface mount type, etc. We can also change the package shape and incorporate TE-coolers inside the package.

In image sensors, we can customize the pixel size and number of pixels. We offer pixel sizes as small as 7 μm. We can also change pixel size and number of pixels to configurations other than square.

Pixel size: 12 × 12 μmNumber of pixels: 2048 × 2048

KMPDB0612EAWavelength (nm)

Quan

tum

effi

cienc

y (%

)

0

20

40

60

80

100

100 200 300 400

Without windowSapphireQuartz

(Typ. Ta=25 °C)

Product example with filter

Package Photosensitive area

3

Lineup

Hamamatsu offers a wide range of detectors, including Si photodiodes, Si APDs and CCD/CMOS image sensors, as well as modules equipped with these detectors.

Product name

P. 6 to 11

S1226/S1227 series

S1336/S1337 series

S12742 series

S15289-33

S12698 series

S10043

S8552, S8553

Type no. Photo Page

Si photodiode

Si APDS14124-20

S12053 series

S9075 / S5344 / S5345

CCD image sensorS10420-01 series

S7030/S7031 series

CMOS image sensorS11639-01

S10121 to S10124 series

Mini-spectrometerC9404CA

C9404CAH

P. 12, 13

P. 14, 15

P. 16, 17

P. 18

4

Product information

5

Si photodiodesS12698 series

FEATURES

APPLICATIONS

*1: λ=λp *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, λ=655 nm *4: VR=0 V, f=10 kHz

10

0.125

30

0.5230

100

1.5700

ParameterSpectral response rangePeak sensitivity wavelengthPhotosensitivity*1

Dark current*2

Temp. coefficient of dark currentRise time*3

Terminal capacitance*4

S12698 S12698-01

50

0.6240

S12698-04 S12698-02 Unit

nmnmA/WpA

times/°CμspF

190 to 10008000.38

1.12

1.1 × 1.1TO-18

2.4 × 2.4 5.8 × 5.8TO-8

ParameterPhotosensitive area sizePackageWindow material

S12698 S12698-013.6 × 3.6

S12698-04 S12698-02 Unit

mm--

TO-5UV glass

KSPDB0350EB

0

Phot

osen

sitiv

ity (A

/W)

190 400 600 800 1000

Wavelength (nm)

(Typ. Ta=25 °C)0.4

0.3

0.2

0.1

30

Rate

of c

hang

e (%

)

190 300 400 500 600

Wavelength (nm)

(Typ. Ta=25 °C, D2 lamp: 30 W,irradiation distance: approx. 70 mm, irradiation time: 1000 h)110

100

90

80

70

60

50

40

Conventional type

S12698 series

KSPDB0355EA

High UV Resistance

With UV glass window (hermetically sealed)High reliability for monitoring UV light irradiationNo resin that causes outgassing

Power monitor for UV light sourcesAnalytical instrument

Spectral response Changes in spectral response after irradiated with UV light

Structure

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

6

Si photodiodeS10043

FEATURES

APPLICATIONS

*1: λ=193 nm *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, 10 to 90% *4: VR=0 V, f=10 kHz


Dark current*2

Rise time*3


Specification Unit

nmnm

mA/WnAμspF

190 to 1100720150.194


Specification Unit

mm--

10 × 10Ceramic

None

KSPDB0257EA

Wavelength (nm)

0100 400 700200 500 800300 600 900 1000

(Typ. Ta=25 °C)

0.20

0.10

0.05

0.25

0.15

Phot

osen

sitiv

ity (A

/W)

KSPDB0264EE

S1227/S1337 series(unsealed product)

S10043

Number of shots

[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,λ=193 nm, pulse width=15 ns (FWHM)]

5 × 1061 × 1060

1 × 107

40

20

60

80

100

120

S8552, S8553

Rela

tive

sens

itivi

ty (%

)

for VUV Detection

Greatly improved sensitivity stability evenafter exposure to ArF (λ=193 nm) excimer laserWindowless package

ArF excimer laser detectionVarious UV detection

Spectral response Variation in sensitivity due to VUV exposure

Structure


7

Product information

Si photodiodesS8552, S8553

FEATURES

APPLICATIONS


Dark current*2

Rise time*3


Unit

nmnm

mA/WnAμspF

190 to 110078060


S8553 Unit

mm--

10 × 10Ceramic

None

18 × 18S8552

S8553S8552

0.0594

0.1188

KSPDB0358EA

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

0150 200 250 300 350 400

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

(Typ. Ta=25 °C)

KSPDB0359EA

S1227/S1337 series(unsealed product)

Number of shots

[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,λ=193 nm, pulse width=15 ns (FWHM)]

5 × 1061 × 1060

1 × 107

40

20

60

80

100

120

S8552, S8553

Rela

tive

sens

itivi

ty (%

)

for VUV Detection

Greatly improved sensitivity stability evenafter exposure to ArF (λ=193 nm) excimer laser

Windowless package

Vacuum UV monitor

Excimer laser monitor

Spectral response Variation in sensitivity due to VUV exposure

*1: λ=193 nm *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, 10 to 90% *4: VR=0 V, f=10 kHz

Structure


8

Si photodiodeS15289-33

FEATURES

APPLICATIONS

ParameterSpectral response rangePeak sensitivity wavelength

Dark current*1



Specification Unitnmnm

pAtimes/°C

μspF

190 to 110010000.120.5410

1.155070

ParameterPackage sizePhotosensitive area sizePackageWindow material

Specification Unitmmmm

--

3 × 32.5 × 2.5

Glass epoxyNone

Photosensitivity λ=200 nmλ=1060 nm

A/W

KSPDB0394EA

0

Phot

osen

sitiv

ity (A

/W)

190 400 600 800300 500 700 900 11001000

Wavelength (nm)

(Typ. Ta=25 °C)

0.4

0.3

0.2

0.7

0.6

0.5

0.1

QE=100%

30Rela

tive

sens

itivi

ty to

the

initi

al v

alue

(%)

190 300 400 500 600

Wavelength (nm)

(Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance:approx. 70 mm, irradiation time: 1000 h)

110

100

90

80

70

60

50

40

Previous product

S15289-33

KSPDB0395EA

High UV Resistance

High sensitivity in UV region: QE=75% (λ=200 nm)High reliability in UV light irradiationCompatible with lead-free solder reflow

Light level monitor for UV light sourceAnalytical instruments

Spectral response Changes in spectral response after irradiated with UV light

Structure


*1: VR=10 mV *2: VR=0 V, RL=1 kΩ, λ=650 nm, 10 to 90% *3: VR=0 V, f=10 kHz

9

Product information

Si photodiodesS12742 series

FEATURES

APPLICATIONS

ParameterCenter wavelengthSpectral response half widthPhotosensitivity*1

Dark current*2



S12742-254 Unitmmnm

mA/WpA

times/°CμspF

254101825

1.121

500


Specification Unitmm

--

3.6 × 3.6TO-5

With monochromatic light filter

S12742-220220

6

S12742-275275

10

KSPDB0390EA

200 300 400 500

Wavelength (nm)

Phot

osen

sitiv

ity (m

A/W

)

600

(Typ. Ta=25 °C)30

20

10

0

S12742-220

S12742-275

S12742-254

The S12742 series can be customized to support other peak sensitivity wavelengths such as 340 nm and 560 nm.

for Monochromatic Light

With monochromatic light filterarrow spectral response half width (FWHM): 10 nm typ.

Water quality and atmosphere analysisUV monitors (mercury lamp, etc.)

*1: λ=Center wavelength *2: VR=10 mV *3: VR=0 V, RL=1 kΩ *4: VR=0 V, f=10 kHz

Structure


Spectral response

10

Si photodiodesS1226 / S1227 / S1336 / S1337 series

FEATURES

APPLICATIONS

*1: λ=200 nm

190 to 1000720


S1226/S1227 series S1336/S1337 series UnitnmnmA/W0.12

1.1 × 1.1 to5.8 × 5.8

Metal

1.1 × 5.9 to10 × 10Ceramic

1.1 × 5.9 to18 × 18Ceramic

Parameter

PackageWindow material

S1226 series S1227 series1.1 × 1.1 to5.8 × 5.8

Metal

S1336 series S1337 series Unit

--Quartz glass

Photosensitive area size mm

190 to 1100960

High UV Sensitivity

KSPDB0094EC

Phot

osen

sitiv

ity (A

/W)

Wavelength (nm)

0.1

0190 400 600 800 1000

0.3

0.2

(Typ. Ta=25 °C)

0.4

0.5

0.6

0.7

S1226/S1227-BQ series S1336/S1337-BQ series

0.1

0190 400 600 800 1000

0.3

0.2

(Typ. Ta=25 °C)

0.4

0.5

0.6

0.7

Phot

osen

sitiv

ity (A

/W)

Wavelength (nm)

S1337-21

S1337-BQ series

KSPDB0404EA

Analytical equipmentOptical measurement equipment

High UV sensitivityIR sensitivity suppressed type (S1226/S1227 series)High sensitivity in UV to near IR range (S1336/S1337 series)

Spectral response

Structure


11

Product information

Si APDS14124-20

FEATURES

APPLICATIONS

*1: M=50 *2: ID=10 μA *3: M=50, f=1 MHz *4: M=50, λ=266 nm, RL=50 Ω, -3dB *4: VR=0 V, f=10 kHz

ParameterPeak sensitivity wavelength*1

Breakdown voltage*2

Temp. coefficient of breakdown voltageDark current (max.)*1


Cutoff frequency*4

Gain*5

Specification UnitnmV

V/°CnApF

MHz-

6004000.78

311

25050 to 400



--

2.0TO-8

AR-coated quartz

KAPDB0568EA

40

100

80

60

0

20

Quan

tum

effi

cienc

y (%

)

Wavelength (nm)

200 240 280 320 360 400

(Typ. M=1, Ta=25 °C)

High UV Sensitivity

(Typ. Ta=25 °C, λ=266 nm)1000

1

100

10

Gain

Reverse voltage (V)

200 300250 350 400 450

-20 °C

60 °C

40 °C20 °C

0 °C

KAPDB0570EA

Semiconductor inspection system

Laser processing equipment

High sensitivity: QE=87% (λ=266 nm)

Low capacitance

Low noise

Spectral response Gain vs. reverse voltage

Structure


12

Si APDS12053 series

FEATURES

APPLICATIONS

*1: ID=100 μA *2: RL=50 Ω *3: λ=650 nm

ParameterSpectral response rangePeak sensitivity wavelengthBreakdown voltage*1

Temp. coefficient of breakdown voltageDark currentTerminal capacitanceCutoff frequency*2

Gain*3

S12053-05 UnitnmnmV

V/°CnApF

MHz-

KAPDB0023EB

200 to 10006201500.140.25

40050


S12053-05 Unitmm

--

0.5TO-8

UV glass

S12053-02

0.2

S12053-10

1.0

S12053-02 S12053-10

2900

15250

0

20

40

60

80

100

Quan

tum

effi

cienc

y (%

)

(Typ. Ta=25 °C)

Wavelength (nm)

200 400 600 800 1000

High UV Sensitivity

Gain

Reverse voltage (V)

103

102

101

100

(Typ. λ=650 nm)

130 160140 150

-20 °C

0 °C

20 °C

40 °C

60 °C

KAPDB0011EC

Low-light-level measurementAnalytical instrument

High sensitivity in UV to visible rangeLow noise

Spectral response Gain vs. reverse voltage

Structure


13

Product information

CCD area image sensorsS10420-1106NU-01, S10420-1106NW-01

FEATURES

APPLICATIONS

ParameterSpectral response range

Conversion efficiencyDark currentReadout noise*1

Dynamic range*2

Photoresponse nonuniformity*3

S10420-1106NU-01 Unit

nm

μV/e-

e-/pixel/se- rms

-%

603006.5506

50000±3

ParameterPixel sizeNumber of eff effective pixelsPackageWindow material


---

14 × 142048 × 64

24-pin ceramic DIPQuartz glass

Full well capacityVerticalHorizontal

ke-

200 to 1100 120 to 1100S10420-1106NW-01

KMPDB0578EB

Wavelength (nm)

(Typ. Ta=25 °C)

Quan

tum

effi

cienc

y (%

)

0

100

80

60

40

20

1200200 400 600 800 1000100

S10420-1106NU-01

S11071 seriesS10420-1004-01/-1006-01S10420-1104-01/-1106-01

S10420-1106NW-01

* The graph is plotted as 100% at the average spectral response (λ=200 to 400 nm) before irradiation.

Irradiation level (A.U.)

Rela

tive

sens

itivi

ty (%

)

0

110

100

90

80

70

60

50

40

30

20

10

Previous type

Improved type

KMPDB0610EA

*1: Ta=-40 °C, operating frequency: 20 kHz *2: Dynamic range = Full well capacity / Readout noise*3: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

High UV Resistance

Spectrometers

Improved etaloning characteristicsHigh UV resistanceWith anti-blooming function

Spectral response Variation in sensitivity due to UV exposure

Structure


14

CCD area image sensorsS7030/S7031 series

FEATURES

APPLICATIONS

ParameterSpectral response range

Conversion efficiencyDark currentReadout noise*2


U type Unitnm

μV/e-

e-/pixel/se- rms

%

32010002.2508

1250004000

±3

Full well capacity*1VerticalHorizontal

ke-

200 to 1100 120 to 1100W type

Quan

tum

effi

cienc

y (%

)

Wavelength (nm)

(Typ. Ta=25 ℃)

0200100 400 600 800 1000300 500 700 900 1100 1200

10

20

30

40

50

60

70

80

90

100

S7030/S7031 series (W type)

S7030/S7031 series(standard type)

S7030/S7031 series(U type)

KMPDB0598EB

ParameterPixel sizeNumber of effective pixelsPackageWindow material

S7030-1006U/W Unitmm

---AR-coated sapphire

S7030-1007U/W S7031-1006SU/SW S7031-1007SU/SW

24.5 × 1.31024 × 58

Quartz glass24-pin ceramic DIP

24.5 × 2.91024 × 122

24.5 × 1.31024 × 58

24.5 × 2.91024 × 122

Dynamic range*3 Line binningArea scanning

-

*1: The linearity is ±1.5%. *2: Ta=-40 °C, operating frequency: 150 kHz *3: Dynamic range = Full well capacity / Readout noise*4: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

High UV Resistance

Fluorescence spectrometer, ICPSpectrometers

Non-cooled type (S7030 series), One-stage TE-cooled type (S7031 series)Line / PIxel binningHigh UV resistance: U type, W type

Spectral response Variation in sensitivity due to UV exposure

* The graph is plotted as 100% at the average spectral response (λ=200 to 400 nm) before irradiation.

Irradiation level (A.U.)

Rela

tive

sens

itivi

ty (%

)

0

110

100

90

80

70

60

50

40

30

20

10

Previous type

Improved type

KMPDB0610EA

Structure


15

Product information

CMOS linear image sensorS11639-01

FEATURES

APPLICATIONS

ParameterSpectral response rangeSaturation output voltage*1

Conversion efficiencyDark output voltage*2

Readout noiseDynamic range*3


Specification UnitnmV

μV/e-

mVmV rms

-%

200 to 10002.0250.20.4

5000±2

ParameterPixel heightPixel pitchNumber of effective pixelsPackageWindow material

Specification Unitμmμm---

20014

2048LCP (liquid crystal polymer)

Quartz glass

KMPDB0449EB

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

200 220 240 260 280 3000

0.16

0.12

0.08

0.04

(Ta=25 °C)

Previous type S11639

S11639-01

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

200 400 600 800 120010000

0.1

0.2

0.3

0.4

0.5 (Ta=25 °C)

KMPDB0467EB

*1: Difference from output offset voltage *2: Integration time=10 ms *3: Dynamic range = Saturation output voltage / Readout noise *4: Measured at one-half of the saturation output

High UV Sensitivity

SpectrometersPosition detection

Simultaneous charge integration for all pixels5 V single power supply operationBuilt-in timing generator allows operation with onlystart and clock pulse inputs

Spectral response (typical example) Spectral response in UV region (typical example)

Structure


16

CMOS linear image sensorsS10121 to S10124 series

FEATURES

APPLICATIONS

ParameterPixel heightPixel pitchNumber of effective pixelsPackageWindow material

Unitmmμm---

S10122 series0.550

KMPDB0443EA

0.04

0.06

0.08

200 220 240 260 280 300

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

0

0.12

0.10

0.02

(Ta=25 °C)

Previous type

S10121 to S10124 series (-01)

S10121 series2.550

S10123 series0.525

S10124 series2.525

CeramicQuartz glass

128 / 256 / 512 256 / 512 / 1024

0.2

0.3

200 600 1000400 800 1200

Wavelength (nm)

Phot

osen

sitiv

ity (A

/W)

0

0.4

0.1

(Ta=25 °C)

KMPDB0442EA

ParameterSpectral response rangeSaturation output chargeDark currentPhoto response non-uniformity (max.)*

UnitnmpCpA%

200 to 1000

±3

S10122 seriesS10121 series S10123 series S10124 series

320.02

1650.1

140.02

750.1

High UV Sensitivity

Smoothly varying spectral response characteristics in UV regionVariable integration time for each pixelLarge saturation output charge

Spectral response (typical example) Spectral response in UV region (typical example)

Structure


Spectrophotometry

* Measured at one-half of the saturation output

17

Product information

Mini-spectrometersC9404CA, C9404CAH

FEATURES

APPLICATIONS

■ Spectral response in UV region (typical example)

ParameterSpectral response rangeSpectral resolution (FWHM)Wavelength reproducibilityWavelength temperature dependence

C9404CA Unitnmnmnm

nm/°C

200 to 400

-0.1 to +0.1-0.02 to +0.02

ParameterNumber of pixelsDimensions (W × D × H)WeightInterfaceExternal power supplyImage sensor

Specification Unit-

mmg-V-

1024125.7 × 115.7 × 75

670USB 1.1

5Back-thinned type CCD image sensor (S10420-1006-01)

C9404CAH

3 max. 1 typ.

High UV Sensitivity

KACCB0651EA

Wavelength (nm)

Rela

tive

sens

itivi

ty

200 400 600 8000

0.16

0.12

0.08

0.04

(Ta=25 °C)

C9404CAC9404CAH

C10082CAC10082MD (CMOS)

■ Spectral resolution vs. wavelength

Wavelength (nm)

Spec

tral r

esol

utio

n (n

m)

200 300 400

(Typ. Ta=25 °C)5

4

3

2

1

0

C9404CA (Slit width 140 μm, NA 0.11)

C9404CAH (Slit width 10 μm, NA 0.11)

KACCB0160EC

High resolution 1 nm (C9404CAH)Integrated with back-thinned type CCD image sensor:Sensitivity is about two orders of magnitude higher than CMOS types.High throughput due to transmission grating made of quartz

Low-light-level measurement such as fluorescence measurementMoisture measurementLiquid chromatography

Structure

Optical characteristics

18

Product information

Cat. No. KOTH0022E03 Feb. 2021

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218, E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8, E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R.China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866, E-mail: [email protected]: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081, E-mail: [email protected]

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

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