WILEY-VCH - GBV1956 Contents High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80% Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura,

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conferences and critical reviews

Editor-in-Chief

Martin Stutzmann, Garching

Regional Editors

Martin S. Brandt, GarchingPeter Deak, BudapestJose Roberto Leite, Sao PauloJohn I. B. Wilson, Edinburgh

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Proceedings

5th International Conference onNitride Semiconductors (ICNS-5)

Nara, Japan25-30 May 2003

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Hiroshi Amano and Takashi Udagawa

0 7 2003

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Contents

Visit our homepage on: http://www.physica-status-solidi.comFull text on: http://www.interscience.wiley.com

This Table of Contents is organized thematically according to the topics presented at the confer-ence. Please note that papers with page numbers marked (a) and (b) are reprinted from phys.stat. sol. (a) 200, No. 1, 9-208 (2003) and phys. stat. sol. (b) 240, No. 2, 273-460 (2003), respec-tively. You may find papers with phys. stat. sol. (a), (b), and (c) citations in the three sections ofthis volume, separated by coloured sheets for easy orientation.

Preface 1977

Committees 1978

Bulk crystals

Bulk GaN crystals grown at high pressure as substrates for blue-laser technologyR. Czernetzki, M. Leszczynski, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski,M. Krysko, M. Sarzynski, P. Wisniewski, G. Nowak, A. Libura, S. Grzanka, T. Suski,L. Dmowski, E. Litwin-Staszewska, M. Bockowski, and S. Porowski (a) 9-12

Fast growth of high quality GaND. Gogova, H. Larsson, R. Yakimova, Z. Zolnai, I. Ivanov, and B. Monemar (a) 13-17

Free-standing HVPE-GaN layersH. Larsson, D. Gogova, A. Kasic, R. Yakimova, B. Monemar, C. R. Miskys, andM. Stutzmann (c) 1985-1988

Characteristics of semi-insulating, Fe-doped GaN substratesRobert P. Vaudo, Xueping Xu, Allan Salant, Joseph Malcarne, and George R. Brandes . . (a) 18-21

A1N substrates: fabrication via vapor phase growth and characterizationYu. Melnik, V. Soukhoveev, V. Ivantsov, V. Sizov, A. Pechnikov, K. Tsvetkov,O. Kovalenkov, V. Dmitriev, A. Nikolaev, N. Kuznetsov, E. Silveira, and J. Freitas Jr. . . (a) 22-25

Role of oxygen in A1N sublimation growthS. Yu. Karpov, A. V. Kulik, I. N. Przhevalskii, M. S. Ramm, and Yu. N. Makarov . . . . (c) 1989-1992

PVT growth of bulk A1N crystals with low oxygen contaminationM. Bickermann, B. M. Epelbaum, and A. Winnacker (c) 1993-1996

Fabrication of native, single-crystal A1N substratesL. J. Schowalter, G. A. Slack, J. B. Whitlock, K. Morgan, S. B. Schujman,B. Raghothamachar, M. Dudley, and K. R. Evans (c) 1997-2000

Epitaxial growth

GaN-based epitaxy on silicon: stress measurementsA. Krost, A. Dadgar, G. Strassburger, and R. Clos (a) 26-35

High-quality quaternary AlInGaN epilayers on sapphireYang Liu, Takashi Egawa, Hiroyasu Ishikawa, and Takashi Jimbo (a) 36-39

1956 Contents

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al contentof 80%

Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, andNaoki Kobayashi (a) 40-43

Growth of GaN on porous SiC and GaN substratesC. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz,P. W. Bohn, and I. Adesida (a) 44-47

Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sap-phire substrates

W. H. Sun, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang,G. Simin, M. Asif Khan, R. Gaska, and M. S. Shur (a) 48-51

Growth and photoluminescence of InAlGaN filmsDa-Bing Li, Xun Dong, Jinsong Huang, Xianglin Liu, Zhongying Xu, and Zhanguo Wang. (c) 2001 -2005

Two-step temperature ramping technique in MOCVD GaN films with high electromechanicalcoupling coefficients

Jae-Hoon Lee, Ki-Yeol Park, Sung-Bum Bae, Doo-Hyeb Youn, Kyu-Seok Lee,Chang-Min Jeon, Ho-Won Jang, Jong-Lam Lee, Hyung-Koun Cho, Myoung-Bok Lee,Sung-Ho Hahm, Young-Hyun Lee, and Jung-Hee Lee (c) 2006-2009

Si doping effects on the electrical and structural properties of high Al composition Al^Ga^Nfilms grown by MOCVD

P. Cantu, S. Keller, F. Wu, P. Waltereit, A. E. Romanov, U. K. Mishra, J. S. Speck, andS.P. DenBaars (c) 2010-2013

X-ray characterization of high quality A1N epitaxial layers: effect of growth condition on layerstructural properties

Q. S. Paduano, A. J. Drehman, D. W. Weyburne, J. Kozlowski, J. Serafinczuk, J. Jasinski,and Z. Liliental-Weber (c) 2014-2018

MOCVD growth and optical investigation of the AlInGaN quaternary systemT. Wang, P. J. Parbrook, and M. A. Whitehead (c) 2019-2022

High-quality A1N epitaxial films on (OOOl)-faced sapphire and 6H-SiC substrateT. Shibata, K. Asai, S. Sumiya, M. Mouri, M. Tanaka, O. Oda, H. Katsukawa, H. Miyake,and K. Hiramatsu (c) 2023-2026

Lattice-matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of disloca-tion penetration

T. Udagawa, M. Odawara, and G. Shimaoka (c) 2027-2030

Surface treatment of GaN and InN usingT. Maruyama, K. Yorozu, T. Noguchi, Y. Seki, Y. Saito, T. Araki, and Y. Nanishi . . . . (c) 2031 -2034

Lattice dynamics and Raman spectra of strained hexagonal GaN/AIN and GaN/AlGaN superlat-tices

V. Yu. Davydov, A. N. Smirnov, M. B. Smirnov, S. V. Karpov, I. N. Goncharuk,R. N. Kyutt, M. V. Baidakova, A.V. Sakharov, E. E. Zavarin, W. V. Lundin, H. Harima,andK. Kisoda (c) 2035-2038

The role of the growth temperature for the SiN interlayer deposition in GaNTimBottcher, Jens Dennemarck, Roland Kroger, Stephan Figge, and DetlefHommel . . . (c) 2039-2042

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown ona (111) Si substrate by selective MOVPE

Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, andN. Sawaki (c) 2043-2046

Contents 1957

Strain effects on Auger electron spectroscopy in different regions of epitaxial-lateral-overgrowthGaN

Duanjun Cai and Junyong Kang (c) 2047-2050

Characterization of MOVPE grown AIN/GaN heterointerfaces by grazing incidence X-ray reflec-tivity. Alloy formation at heterointerfaces

Masanobu Hiroki and Naoki Kobayashi (c) 2051-2054

Crack formation and development in AlGaN/GaN structuresP. J. Parbrook, T. Wang, M. A. Whitehead, C. N. Harrison, R. J. Lynch, and R. T. Murray . (c) 2055-2058

Growth of GaN and InGaN layers by rapid thermal MOCVDO. Kreinin, G. Bahir, and J. Salzman (c) 2059-2062

Novel growth technique for the reducing dislocation density in GaN on sapphire substrateT. Kunisato, Y. Nomura, H. Ohbo, T. Kano, N. Hayashi, M. Hata, T. Yamaguchi,M. Shono, M. Sawada, and A. Ibaraki (c) 2063-2066

Evolution of A1N buffer layers on silicon and effects on the properties of epitaxial GaN filmsK. Y. Zang, S. J. Chua, L. S. Wang, and C. V. Thompson (c) 2067-2071

Growth of Al^Ga^N and GaN on photo-electrochemically patterned SiC substratesU. Ahrend, U. Rossow, N. Riedel, M. Greve, F. Hitzel, and A. Hangleiter (c) 2072-2076

Growth and evaluation of GaN with SiN interlayer by MOCVDYoshiki Naoi, Toshihiko Tada, Hongdong Li, Nan Jiang, and Shiro Sakai (c) 2077-2081

InGaN self-organized quantum dots grown by metalorganic chemical vapour deposition(MOCVD)

L. S. Wang, S. J. Chua, K. Y. Zang, and S. Tripathy (c) 2082-2086

Direct observation of hillocks on pendeo-epitaxial GaN films and stabilization of GaN seed layersfor hillock-free surface

H. S. Cheong, C. S. Park, C.-H. Hong, and H. K. Cho (c) 2087-2090

Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPEM. Miyoshi, H. Ishikawa, T. Egawa, and T. Jimbo (c) 2091 -2094

Effect of growth temperature and Si doping on the microstructure of GaN thin films grown onhigh temperature GaN

Kwang Suk Son, Dongyu Kim, Hyung Koun Cho, Kyuhan Lee, Sunwoon Kim,Keunseop Park, and Junho Kim (c) 2095-2098

Effects of deposition parameters of low-temperature GaN layer on the structural and optical prop-erties of cubic GaN epilayers grown on GaAs(OOl) substrates by MOVPE

Mutsumi Sugiyama, Taiki Nosaka, Kiyomi Nakajima, Parhat Ahmet, Toyomi Aoyama,Toyohiro Chikyow, and Shigefusa F. Chichibu (c) 2099-2102

Smart Cut™ SiCOI wafers for MBE GaN epitaxyF. Letertre, J. Brault, I. Matko, F. Enjalbert, E. Bellet-Amalric, G. Feuillet, C. Richtarch,B. Faure, L. DiCioccio, R. Madar, B. Daudin, and E. Monroy (c) 2103-2106

Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growthYasutoshi Kawaguchi, Gaku Sugahara, Atsunori Mochida, Toshitaka Shimamoto,Akihiko Ishibashi, and Toshiya Yokogawa (c) 2107-2110

Annealing effects of ZnO films deposited on (0001) A12O3 and (111) Si substrate by RF sputter-ing and GaN layer grown on ZnO films used as buffer layer by MOCVD

S.-R. Jeon, M.-A. Yu, S. K. Shim, G. M. Yang, and S. J. Son (c) 2111-2115

Contents

f properties of InGaN based multiple quantum wells on low threading dislocation densityGaN films fabricated by air-bridged lateral epitaxial growth

A. Ishibashi, G. Sugahara, Y. Kawaguchi, Y. Yamada, T. Taguchi, and T. Yokogawa . . . (c) 2116-2119

Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vaporphase epitaxy

K. Kusakabe and K. Ohkawa (c) 2120-2123

Growth of homoepitaxial Ill-nitride layers on bulk GaN single crystals by molecular-beam epitaxyS. Iwata, S. Kubo, M. Konishi, T. Saimei, S. Kurai, T. Taguchi, K. Kainosho, andA. Yokohata (c) 2124-2127

MOVPE growth and n-type conductivity control of high-quality Si-doped Al0 5Ga0 5N using epi-taxial A1N as an underlying layer

Yoshihiro Kida, Akira Iishiga, Tomohiko Shibata, Hiroyuki Naoi, Hideto Miyake,Kazumasa Hiramatsu, and Mitsuhiro Tanaka (c) 2128-2131

Structural and electrical characterization of a-plane GaN grown on a-plane SiCM. D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U. K. Mishra, J. S. Speck,and S. P. DenBaars (c) 2132-2135

Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowthR. Liu, A. Bell, F. A. Ponce, H. Amano, I. Akasaki, and D. Cherns (c) 2136-2140

Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion oflow-temperature GaN buffer layers

H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai, and A. Koukitu (c) 2141-2144

Comparison of the material properties of GalnN structures grown with ammonia and dimethyl-hydrazine as nitrogen precursors

V. Perez-Solorzano, B. Santic, A. Groning, M. Jetter, M. Seip, H. Schweizer, and F. Scholz (c) 2145-2149

Growth of crack-free high-quality GaN on Si(l l l) using a low-temperature A1N interlayer: ob-servation of tilted domain structures in the A1N interlayer

Min-Ho Kim, Young-Gu Do, Hyon Choi Kang, Chel-Jong Choi, Do Young Noh,Tae-Yeon Seong, and Seong-Ju Park (c) 2150-2153

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growthTetsuo Narita, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, andNobuhiko Sawaki (c) 2154-2158

Growth of high-quality GaN on FACELO substrate by raised-pressure HVPES. Bohyama, K. Yoshikawa, H. Naoi, H. Miyake, K. Hiramatsu, and T. Maeda (c) 2159-2162

The surface treatment of sapphire substrate and its effects on the initial stage of GaN growth byMOVPE

M. Tsuda, K. Watanabe, S. Kamiyama, H. Amano, and I. Akasaki (c) 2163-2166

Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patternedshape mask

G. Feng, X. M. Shen, J. J. Zhu, B. S. Zhang, H. Yang, and J. W. Liang (c) 2167-2170

Influence of growth kinetics on the indium distribution during MOVPE growth of GalnN quan-tum wells

E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, and J. Gutowski . . . . (c) 2171-2176

Growth of GaN on 4-inch Si substrate with a thin AlGaN/AIN intermediate layerH. Ishikawa, M. Kato, M. S. Hao, T. Egawa, and T. Jimbo (c) 2177-2180

Contents 1959

Effect of Al content on the microstructure in GaN grown on Si by MOVPEX. Chen, M. Ishiko, Y. Kuroiwa, and N. Sawaki (c) 2181-2184

Light emitting diodes

Recent progress of nitride-based light emitting devicesT. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa,S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou,H. Tamaki, Y. Murazaki, and M. Kameshima (a) 52-57

Fabrication of LED based on III-V nitride and its applicationsNaoki Shibata, Toshiya Uemura, Hisao Yamaguchi, and Takemasa Yasukawa (a) 58-61

Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and lightemitting diodes

H. W. Shim, E.-K. Suh, C.-H. Hong, Y.-W. Kim, and H. J. Lee (a) 62-66

Violet and UV light-emitting diodes grown on ZrB2 substrateS. Kamiyama, S. Takanami, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, M. Iwaya,H. Kinoshita, T. Matsuda, T. Yasuda, S. Otani, H. Amano, and I. Akasaki (a) 67-70

Advanced characterization studies of sapphire substrate misorientation effects on GaN-basedLED device development

D. Lu, D. I. Florescu, D. S. Lee, V. Merai, A. Parekh, J. C. Ramer, S. P. Guo, andE. Armour (a) 71-74

GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiencyChristoph M. Zellweger, Julien Dorsaz, Jean-Francois Carlin, Hans-Jorg Buhlmann,Ross P. Stanley, and Marc Ilegems (a) 75-78

A novel fabrication method for a 64 x 64 matrix-addressable GaN-based micro-LED arrayC.-W. Jeon, H. W. Choi, and M. D. Dawson (a) 79-82

Heat generation and dissipation in GaN-based light emitting devicesStephan Figge, Tim Bottcher, Detlef Hommel, Christoph Zellweger, and Marc Ilegems . . (a) 83-86

High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surfaceYoung-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi, and Shiro Sakai (a) 87-90

High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottkydiodes

Chin-Hsiang Chen, Shoou-Jinn Chang, and Yan-Kuin Su (a) 91-94

Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40%

Hiromitsu Kudo, Youichiro Ohuchi, Takahide Jyouichi, Takashi Tsunekawa,Hiroaki Okagawa, Kazuyuki Tadatomo, Yasuhide Sudo, Munehiro Kato, andTsunemasa Taguchi (a) 95-98

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodesA. Chitnis, V. Adivarahan, J. P. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin,M.AsifKhan,X. Hu, Q. Fareed, R. Gaska,andM. S. Shur (a) 99-101

High efficiency AlGalnN-based light emitting diode in the 360-380 nm wavelength rangeHisao Sato, Hong-Xing Wang, Daisuke Sato, Ryohei Takaki, Naoki Wada,Tetsuya Tanahashi, Kenji Yamashita, Shunsuke Kawano, Takashi Mizobuchi,Akihiko Dempo, Kenji Morioka, Masahiro Kimura, Suguru Nohda, Tomoya Sugahara,and Shiro Sakai (a) 102-105

1960 Contents

340-350 nm GaN-free UV-LEDsT.Nishida,T. Ban, and N. Kobayashi (a) 106-109

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaNM. Iwaya, S. Takanami, A. Miyazaki, T. Kawashima, K. Iida, S. Kamiyama, H. Amano,andl. Akasaki (a) 110-113

Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structureDaisuke Morita, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka,Katsuhiro Yasutomo, Kazuyuki Akaishi, Shin-ichi Nagahama, and Takashi Mukai . . . . (a) 114-117

InGaN light emitting diodes of micro-ring geometryH. W. Choi, C. W. Jeon, and M. D. Dawson (c) 2185-2188

Oxidation treatment on Ni/Au Ohmic contacts to p-type GaNZ. Z. Chen, Z. X. Qin, X. D. Hu, T. J. Yu, B. Zhang, Z. J. Yang, Y. Z. Tong, X. M. Ding,and G.Y.Zhang (c) 2189-2192

Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxyHitoshi Sato, Patrick Waltereit, Daniel S. Green, Christiane Poblenz, Thomas Katona,Steven P. DenBaars, James S. Speck, Hitoshi Tamura, and Chihiro Funaoka (c) 2193-2197

Electroluminescence efficiency of InGaN light emitting diodes: dependence on AlGaN:Mgelectron blocking layer width and Mg doping profile

T. Stephan, K. Kohler, M. Kunzer, P. Schlotter, and J. Wagner (c) 2198-2201

Analysis of quantum efficiency of high brightness GalnN/GaN quantum wellsS. Lahmann, F. Hitzel, U. Rossow, and A. Hangleiter (c) 2202-2205

336 nm ultraviolet LEDs grown with A1N interlayers for strain reductionT. M. Katona, M. C. Schmidt, T. Margalith, C. Moe, H. Tamura, H. Sato, C. Funaoka,R. Underwood, S. Nakamura, J. S. Speck, and S. P. DenBaars (c) 2206-2209

Low resistivity contacts to p-type GaN by plasma treatmentH. W. Choi, C. W. Jeon, and M. D. Dawson (c) 2210-2213

Influence of excited states of Mg acceptors on hole concentration in GaNH. Matsuura, D. Katsuya, T. Ishida, S. Kagamihara, K. Aso, H. Iwata, T. Aki,S.-W. Kim, T. Shibata, and T. Suzuki (c) 2214-2218

Vertical InGaN-based blue light emitting diode with plated metal base fabricated using laser lift-off technique

Tetsuzo Ueda, Masahiro Ishida, Satoshi Tamura, Yasuhiro Fujimoto, Masaaki Yuri,Takeshi Saito, and Daisuke Ueda (c) 2219-2222

Low-energy electron-beam irradiation of GaN-based quantum well structuresU. Jahn, S. Dhar, H. Kostial, I. M. Watson, and K. Fujiwara (c) 2223-2226

High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrodeC. S. Chang, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin,Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu (c) 2227-2231

Laser controlled thermocracking die separation technique for sapphire substrate based devicesV. Kondratenko, S. Tchernykh, and P. Gindin (c) 2232-2235

GalnNP MQW structure LED grown by laser-assisted MOCVDS. Yoshida, J. Li, and Y. Itoh (c) 2236-2239

Magnesium diffusion in wurtzite-type GaN crystalK. Harafiiji, T. Tsuchiya, and K. Kawamura (c) 2240-2243

Contents 1961

InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template by metalorganicchemical vapor deposition

Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa, and Takashi Jimbo (c) 2244-2247

Effects of Mg fluctuation on the electrical and optical properties in p-GaN/undoped GaN layersdependent on the growth temperature

C. S. Kim, H. K. Cho, C.-H. Hong, E.-K. Suh, and H. J. Lee (c) 2248-2252

MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substratesS. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen,S. C. Shei, C. W. Kuo, and D. H. Fang (c) 2253-2256

InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodesChin-Hsiang Chen, Shoou-Jinn Chang, and Yan-Kuin Su (c) 2257-2260

Thermal analysis and design of GaN-based LEDs for high power applicationsL. Kim, G. W. Lee, W. J. Hwang, J. S. Yang, and M. W. Shin (c) 2261-2264

Indium-free violet LEDs grown by HVPEA. S. Usikov, D. V. Tsvetkov, M. A. Mastro, A. I. Pechnikov, V. A. Soukhoveev,Y. V. Shapovalova, O. V. Kovalenkov, G. H. Gainer, S. Yu. Karpov, V. A. Dmitriev,B. O'Meara, S. A. Gurevich, E. M. Arakcheeva, A. L. Zakhgeim, and H. Helava (c) 2265-2269

High brightness blue and green light emitting quantum wells with graded-In-content profilegrown by MOCVD

Yuanping Sun, Yong-Hoon Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. Hahn . . . . (c) 2270-2273

Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electro-luminescent devices

K. Hara, A. Sato, K. Azumada, T. Atsumori, and M. Shiratori (c) 2274-2277

Laser diodes

Ultraviolet InAlGaN multiple-quantum-well laser diodesMichael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson (a) 118-121

Super high-power AlGalnN-based laser diodes with a single broad-area stripe emitter fabricatedon a GaN substrate

Shu Goto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma,Koshi Tamamura, Toshihiro Hashizu, and Masao Ikeda (a) 122-125

Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire sub-strates using high-temperature-grown single-crystal A1N buffer layers

YasuoOhba (a) 126-130

AlGalnN violet laser diodes grown on GaN substrates with low aspect ratioShigetoshi Ito, Yukio Yamasaki, Susumu Omi, Kunihiro Takatani, Toshiyuki Kawakami,Tomoki Ohno, Masaya Ishida, Yoshihiro Ueta, Takayuki Yuasa, and Mototaka Taneya . . (a) 131 -134

Influence of the carrier density on the optical gain and refractive index change in InGaN laserstructures

M. Rowe, P. Michler, J. Gutowski, V. Kummler, A. Lell, and V. Harle (a) 135-138

Defects in degraded GaN-based laser diodesShigetaka Tomiya, Shu Goto, Motonobu Takeya, and Masao Ikeda (a) 139-142

Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasersU. T. Schwarz, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Harle (a) 143-146

1962 Contents

Recent progress of high power GaN-based violet laser diodesO. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae,W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, and Y. Park (c) 2278-2282

Time resolved study of laser diode characteristics during pulsed operationChristoph Eichler, Sven-Silvius Schad, Matthias Seyboth, Frank Habel, Marcus Scherer,Stephan Miller, Andreas Weimar, Alfred Lell, Volker Harle, and Daniel Hofstetter . . . . (c) 2283-2286

Coupling of optical modes in GaN-based laser-diodesS. Einfeldt, S. Figge, T. Bottcher, and D. Hommel (c) 2287-2291

Degradation in AlGalnN lasersMotonobu Takeya, Takashi Mizuno, Tomomi Sasaki, Shinro Ikeda, Tsuyoshi Fujimoto,Yoshio Ohfuji, Kenji Oikawa, Yoshifumi Yabuki, Shiro Uchida, and Masao Ikeda . . . . (c) 2292-2295

Analysis of self-pulsation characteristics of InGaN laser diodeV. Z. Tronciu, Minoru Yamada, Tomoki Ohno, Shigetoshi Ito, Toshiyuki Kawakami, andMototaka Taneya (c) 2296-2299

The fabrication of GaN-based optical cavity mirrors by focused ion beam millingQian Ren, Bei Zhang, Jun Xu, Yan Bo Jin, Zhi Jian Yang, Xiao Dong Hu, Zhi Xin Qin,Zhi Zhong Chen, Xiao Min Ding, Yu Zhen Tong, Zhen Sheng Zhang, Guo Yi Zhang,Da Peng Yu, and Zi Zhao Gan (c) 2300-2303

Comparative study between laser performance and carrier lifetime of 400 nm emittingGalnN/GaN laser diodes

C. Netzel, S. Heppel, F. Hitzel, S. Miller, A. Weimar, G. Briiderl, H. J. Lugauer, A. Lell,V. Harle, and A. Hangleiter (c) 2304-2308

Photo detectors

Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the softX-ray (SX) region (10-100 nm)

Atsushi Motogaito, Hironobu Watanabe, Kazumasa Hiramatsu, Kazutoshi Fukui,Yutaka Hamamura, and Kazuyuki Tadatomo (a) 147-150

High performance Schottky UV detectors (265-100 nm) using n-Alo.5Gao.5N on A1N epitaxiallayer

H. Miyake, H. Yasukawa, Y. Kida, K. Ohta, Y. Shibata, A. Motogaito, K. Hiramatsu,Y. Ohuchi, K. Tadatomo, Y. Hamamura, and K. Fukui (a) 151-154

Design of the layer structures for Schottky type AlGaN UV photodetectorBo-Kyun Kim, Jung-Kyu Kim, Sung-Jong Park, Heon-Bok Lee, Jae-Hoon Lee,Gi-Hong Rue, Myoung-Bok Lee, Young-Hyun Lee, Jung-Hee Lee, and Sung-Ho Hahm . . (c) 2309-2313

High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectorsN. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay (c) 2314-2317

Electron devices

Strain-engineered novel III-N electronic devices with high quality dielectric/semiconductorinterfaces

M. AsifKhan, M. S. Shur, andG. Simin (a) 155-160

High-voltage rf operation of AlGaN/GaN heterojunction FETsM. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto, and T. Nakayama (a) 161-167

Contents 1963

Doping design of GaN-based heterostructure field-effect transistors with high electron density forhigh-power applications

Narihiko Maeda, Takehiko Tawara, Tadashi Saitoh, Kotaro Tsubaki, and Naoki Kobayashi (a) 168-174

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBEM. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler, and D. M. Tennant (a) 175-178

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on siliconsubstrate

M. Marso, P. Javorka, Y. Dikme, H. Kalisch, J. Bernat, C. Schafer, B. Schineller,A. v. d. Hart, M. Wolter, A. Fox, R. H. Jansen, M. Heuken, P. Kordos, and H. Liith . . . . (a) 179-182

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directlyimaged by cathodoluminescence microscopy

F. Bertram, J. Christen, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra (a) 183-186

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrateHideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano,Hiroyasu Ishikawa, Takashi Egawa, and Takashi Jimbo (a) 187-190

Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

R. Kiefer, R. Quay, S. Miiller, T. Feltgen, B. Raynor, J. Schleife, K. Kohler, H. Massler,S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, and G. Weimann (a) 191-194

Drain current DLTS of AlGaN/GaN HEMTsT. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, and K. Maezawa (a) 195-198

First-principle study on the structures and electronic properties of gallium nitride nanowiresYoshihiko Kawakami, Nobuyuki Higashimaki, Kentaro Doi, Koichi Nakamura, andAkitomo Tachibana (c) 2318-2322

Microwave-aided transport measurements on high-density two-dimensional electron systemsconfined at AlGaN/GaN heterointerfaces

D. R. Hang, C. F. Huang, and Y. F. Chen (c) 2323-2326

Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?Jeffrey S. Flynn, Henry Xin, Joe A. Dion, Edward L. Hutchins, Helder Antunes,Lara Fieschi-Corso, Rae Van Egas, and George R. Brandes (c) 2327-2330

AlGaN/GaN microwave HFET including a thin A1N carrier exclusion layerR. S. Balmer, K. P. Hilton, K. J. Nash, M. J. Uren, D. J. Wallis, A. Wells, M. Missous,and T.Martin (c) 2331-2334

Study on off-state breakdown in AlGaN/GaN HEMTsTakeshi Nakao, Yutaka Ohno, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani (c) 2335-2338

Magnetotransport measurement of effective mass, quantum scattering time, and alloy scatteringpotential of polarization-doped 3D electron slabs in graded-AlGaN

Debdeep Jena, S. Heikman, J. S. Speck, U. K. Mishra, A. Link, and O. Ambacher . . . . (c) 2339-2342

High-temperature operation of an AlGaN/GaN HFET on a Si substrate using a thin GaN filmS. Yoshida, J. Li, T. Wada, and H. Takehara (c) 2343-2346

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage andswitching characteristics

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura, and Kunio Tsuda (c) 2347-2350

Fabrication of AlGaN/GaN MIS-HFET using an A12O3 high k dielectricKi-Yeol Park, Hyun-Ick Cho, Jae-Hoon Lee, Sung-Bun Bae, Chang-Min Jeon,Jong-Lam Lee, Dae-Youn Kim, Chun- Soo Lee, and Jung-Hee Lee (c) 2351-2354

1964 Contents

Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2

layersC. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, and B. R. Huang (c) 2355-2359

Investigation of traps in AlGaN/GaN HEMTs on silicon substrateM. Wolter, M. Marso, P. Javorka, J. Bernat, R. Carius, H. Ltith, and P. Kordos (c) 2360-2363

Thermal effects of substrates on the performance of AlGaN/GaN HFETsJeong Park, Chin C. Lee, J. W. Kim, J. S. Lee, W. J. Hwang, and M. W. Shin (c) 2364-2367

Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphireAkira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka,Toshiaki Matsui, Satoshi Hiyamizu, and Takashi Mimural (c) 2368-2371

Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvinprobe force microscopy

Tengfeng Xie, Shigeru Kishimoto, and Takashi Mizutani (c) 2372-2375

Thermal stability investigation of copper-gate AlGaN/GaN high electron mobility transistorsJin-Ping Ao, Naotaka Kubota, Daigo Kikuta, Yoshiki Naoi, and Yasuo Ohno (c) 2376-2379

Al2O3-based surface passivation and insulated gate structure for AlGaN/GaN HFETsTamotsu Hashizume, Shinya Ootomo, and Hideki Hasegawa (c) 2380-2384

Si(l 11) as alternative substrate for AlGaN/GaN HEMTY. Dikme, M. Fieger, F. Jessen, A. Szymakowski, H. Kalisch, J. F. Woitok,P. van Gemmern, P. Javorka, M. Marso, N. Kaluza, R. H. Jansen, and M. Heuken . . . . (c) 2385-2388

Current-voltage instabilities in GaN/AlGaN resonant tunnelling structuresC. T. Foxon, S. V. Novikov, A. E. Belyaev, L. X. Zhao, O. Makarovsky, D. J. Walker,L. Eaves, R. I. Dykeman, S. V. Danylyuk, S. A. Vitusevich, M. J. Kappers, J. S. Barnard,and C. J. Humphreys (c) 2389-2392

Schottky barrier heights of Au, Pd and Ni on n-GaN evaluated using mesa-structure diodesT. Makimoto, M. Kashiwa, T. Kido, N. Matsumoto, K. Kumakura, and N. K o b a y a s h i . . . (c) 2393-2395

Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers

W. K. Fong, B. H. Leung, C. Surya, L. W. Lu, and W. K. Ge (c) 2396-2399

Admittance characterization and analysis of trap states in AlGaN/GaN heterostructuresR. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau (c) 2400-2403

Solid C60 layer growth on A1N (0001) surface for C60 FET structure by MBED. Yokoyama, H. Nojiri, A. Yamamoto, and A. Hashimoto (c) 2404-2407

Hot-electron transport in III-V nitride based two-dimensional gasesS. A. Vitusevich, S. V. Danylyuk, B. A. Danilchenko, N. Klein, S. E. Zelenskyi,A. P. Budnik, R. V. Didenko, A. Yu. Avksentyev, V. N. Sokolov, H. Ltith,V. A. Kochelap, and A. E. Belyaev (c) 2408-2411

Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer inser-tion method

M. Sakai, T. Egawa, H. Ishikawa, and T. Jimbo (c) 2412-2415

Field emitters

Triode-type basic display structure using Si-doped A1N field emittersYoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, and Naoki Kobayashi (a) 199-201

Contents 1965

Electric field emission from nitride semiconductor grown on Mo substrateS. Nishida, T. Yamanaka, S. Hasegawa, and H. Asahi (c) 2416-2419

Characterization of crystalline properties

Microstructure and electronic properties of InGaN alloysF. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya,H. Marui, and S. Tanaka (b) 273-284

Structure analysis of ELO-GaN using a 2 x 4 urn2 micro-beam X-ray of an 8-GeV storage ringT. Miyajima, M. Takeya, S. Goto, S. Tomiya, S. Takeda, H. Kurihara, K. Watanabe,M. Kato, N. Hara, Y. Tsusaka, and J. Matsui (b) 285-288

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulkcrystals

F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory,S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, and K. Saarinen (b) 289-292

Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strai-ned M-plane GaN films on y-LiAlO2

Pranob Misra, Y. J. Sun, O. Brandt, and H. T. Grahn (b) 293-296

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electronmicroscopy

T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys . . . . (b) 297-300

Field-compensated quaternary InAlGaN/GaN quantum wellsF. Kalaitzakis, M. Androulidaki, N. T. Pelekanos, E. Dimakis, E. Bellet-Amalric,D. Jalabert, D. Cengher, K. Tsagaraki, E. Aperathitis, G. Konstantinidis, andA. Georgakilas (b) 301-304

Melting point of wurtzite-type GaN crystalK. Harafuji, T. Tsuchiya, and K. Kawamura (c) 2420-2423

Defect and emission distributions in thick HVPE-GaN layers grown on PENDEO templatesE. Valcheva, T. Paskova, B. Monemar, A. M. Roskowski, and R. F. Davis (c) 2424-2427

Raman study of the strain in GaN films by comparison with a free-standing GaNT. Inoue, Y. Toda, K. Hoshino, T. Someya, and Y. Arakawa (c) 2428-2431

Cracks and dislocation structures in AlGaN systemsI. L. Maksimov, H. D. Li, T. Sugahara, M. Tsukihara, A. Mori, and S. Sakai (c) 2432-2435

Atomic structure and energy of grain boundaries in GaNJun Chen, Pierre Ruterana, and Gerard Nouet (c) 2436-2439

Glide along non-basal slip planes in InGaN epilayersS. Srinivasan, L. Geng, F. A. Ponce, Y. Narukawa, and S. Tanaka (c) 2440-2443

TEM analysis of threading dislocations in crack-free Al^Ga^^N grown on an AlN(0001) tem-plate

N. Kuwano, T. Tsuruda, Y. Kida, H. Miyake, K. Hiramatsu, and T. Shibata (c) 2444-2447

Determination of dislocation density in epitaxially grown GaN using an HC1 etching processF. Habel and M. Seyboth (c) 2448-2451

Characterisation of nitrides by energy filtered TEM and EELSM. W. Fay, G. Moldovan, I. Harrison, E. Larkins, S. V. Novikov, C.T. Foxon,R. S. Balmer, D. E. J. Soley, K. P. Hilton, M. J. Uren, T. Martin, and P. D. Brown . . . . (c) 2452-2455

1966 Contents

Investigation of oxygen incorporation in AlGaN/GaN heterostructuresHo Won Jang, Min-Kyu Lee, Hyun-Joon Shin, and Jong-Lam Lee (c) 2456-2459

Chemical mechanical polishing for decoration and measurement of dislocations on freestandingGaN wafers

Xueping Xu, Robert P. Vaudo, George R. Brandes, Jie Bai, Pelagia Irene Gouma, andMichael Dudley (c) 2460-2463

Atomic structure and energy of junctions between inversion domain boundaries and stackingfaults in wurtzite GaN

J. Kioseoglou, A. Bere, G.P. Dimitrakopulos, A. Serra, G. Nouet, and Ph. Komninou . . . (c) 2464-2469

Insulating and optical properties of boron nitride for wide-band-gap III-N compoundsH. Dumont, B. Bayle, and B. Bonnetot (c) 2470-2473

Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaNepilayers

P. R. Edwards, R. W. Martin, K. P. O'Donnell, and I. M. Watson (c) 2474-2477

Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxyD. Amabile, R. W. Martin, T. Wang, M. A. Whitehead, and P. J. Parbrook (c) 2478-2481

Fundamentals of crystal growth

Characterization of MOVPE-grown GaN layers on GaAs ( l l l )B with a cubic-GaN (111) epi-taxial intermediate layer

S. Sanorpim, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, and Y. Shiraki (b) 305-309

The effect of nitrogen on self-assembled GalnNAs quantum dots grown on GaAsA. Nishikawa, Y. G. Hong, and C. W. Tu (b) 310-313

Characteristics of A1N growth on vicinal SiC(OOOl) substrates by molecular beam epitaxyJ. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou,J.-L. Rouviere, G. Feuillet, and B. Daudin (b) 314-317

Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parametersT. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken. . . (b) 318-321

Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescenceK. Hoshino, S. Kako, and Y. Arakawa (b) 322-325

The effect of Gallium gallium adsorbate on SiC (0001) surface for GaN by MBEK. Jeganathan, M. Shimizu, T. Ide, and H. Okumura (b) 326-329

Lattice-matched interface between GaN and ZrB2

J.-I. Iwata, K. Siraishi, and A. Oshiyama (c) 2482-2485

Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semi-grand canonical Monte Carlo simulation

Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa, and Akinori Koukitu (c) 2486—2489

First-principle calculation of the epitaxial growth of GaN(0001)A. Ishii and T. Aisaka (c) 2490-2493

Reduction of leakage current of p -n junction by using air-bridged lateral epitaxial growth tech-nique

A. Yamada, Y. Kawaguchi, and T. Yokogawa (c) 2494-2497

Contents 1967

Hydride vapor phase epitaxy of A1N: thermodynamic analysis of aluminum source and its appli-cation to growth

Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Y. Kangawa, and A. Koukitu (c) 2498-2501

Growth of high-quality non-polar A1N on 4H-SiC(l 1 -20) substrate by molecular-beam epitaxyN. Onojima, J. Suda, T. Kimoto, and H. Matsunami (c) 2502-2505

HVPE growth of a thick GaN layer on a GaN templated (111) Si substrateY. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki (c) 2506-2510

Ultra-flat and high-quality A1N thin films on sapphire (0001) substrates grown by rf-MBEX. Q. Shen, Y. Tanizu, T. Ide, and H. Okumura (c) 2511-2514

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogenanneal

R. A. Oliver, M. J. Kappers, J. H. Rice, J. D. Smith, R. A. Taylor, C. J. Humphreys,and G. A. D. Briggs (c) 2515-2519

Growth of non-polar a-plane Ill-nitride thin films on Si(100) using non-polar plane buffer layerJ.-H. Song, Y.-Z. Yoo, T. Sekiguchi, K. Nakajima, P. Ahmet, T. Chikyow, K. Okuno,M. Sumiya, and H. Koinuma (c) 2520-2524

Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures:Stranski-Krastanow versus Frank-Van der Merwe growth mode

B. Daudin, N. Gogneau, C. Adelmann, E. Sarigiannidou, E. Monroy, E. Bellet-Amalric,and J. L. Rouviere (c) 2525-2528

Impact of SiC surface control on initial growth mode and crystalline quality of A1N grown bymolecular-beam epitaxy

N. Onojima, J. Suda, T. Kimoto, and H. Matsunami (c) 2529-2532

Growth and characterization of reactive sputtered AlInN filmsQixin Guo, Kousuke Yahata, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa . . . . (c) 2533-2536

Carbon doping of cubic GaN under gallium-rich growth conditionsD. J. As, D. G. Pacheco-Salazar, S. Potthast, and K. Lischka (c) 2537-2540

Reduction of oxygen contamination in A1NJ. Salzman, S. Prawer, B. Meyler, Y. Golan, M. Shandalov, R. Sauer, and N. T e o f i l o v . . . (c) 2541 -2544

Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

H. Yona, Y. Harada, and T. Yodo (c) 2545-2548

Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy onMOCVD-grown GaN template

Toshihide Ide, Mitsuaki Shimizu, Jason Kuo, Kulandaivel Jeganathan, Xu-Qiang Shen,and Hajime Okumura (c) 2549-2552

Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grownA1N in MOVPE

B. Cao, K. Xu, B. W. Seo, S. Arita, S. Nishida, Y. Ishitani, and A. Yoshikawa (c) 2553-2556

Oxygen doping of c-plane GaN by metalorganic chemical vapor depositionSten Heikman, Stacia Keller, Steven P. DenBaars, and Umesh K. Mishra (c) 2557-2561

A comparative study on In-doping effects for MOVPE GaN films on Si(l l l) and sapphire sub-strates

A. Yamamoto, T. Tanikawa, Bablu K. Ghosh, Y. Hamano, A. Hashimoto, and Y. Ito . . . (c) 2562-2565

1968 Contents

Improved optical properties using self-organized GaN nanotip structureH. Yamaji, Y. Terada, H. Yoshida, H. Miyake, and K. Hiramatsu (c) 2566-2569

Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deepsapphire-nitridation followed by Al-preflow at high temperatures

B. W. Seo, Y. Ishitani, and A. Yoshikawa (c) 2570-2574

Influence of lattice constraint from InN and GaN substrate on relationship between input moleratio and solid composition of InGaN during MOVPE

Y. Kangawa, T. Ito, Y. Kumagai, and A. Koukitu (c) 2575-2579

Material quality improvement for homoepitaxial GaN and A1N layers grown on sapphire-basedtemplates

A. S. Usikov, Dae-Woo Kim, A. I. Pechnikov, Yu. V. Ruban, M. A. Mastro, Yu. Melnik,V. A. Soukhoveev, Y. V. Shapovalova, O. V. Kovalenkov, G. H. Gainer, S. Mahajan, andV. A. Dmitriev (c) 2580-2584

CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semi-conductors

Taro Nishiguchi, Yusuke Mukai, Satoru Ohshima, and Shigehiro Nishino (c) 2585-2588

Direct growth of cubic A1N and GaN on Si (001) with plasma-assisted MBET. Ohachi, T. Kikuchi, Y. Ito, R. Takagi, M. Hogiri, K. Miyauchi, M. Wada, Y. Ohnishi,andK. Fujita (c) 2589-2592

Annealing studies of Si-implanted Alo25GaO75NMee-Yi Ryu, E. A. Chitwood, E. N. Claunch, Y. K. Yeo, R. L. Hengehold, J. A. Fellows,andT. Steiner (c) 2593-2596

Characterization of optical properties

Shallow donors in GaNJ. A. Freitas Jr., W. J. Moore, B. V. Shanabrook, G. C. B. Braga, D. D. Koleske,S. K. Lee, S. S. Park, and J. Y. Han (b) 330-336

Recombination dynamics in low-dimensional nitride semiconductorsY. Kawakami, A. Kaneta, K. Omae, A. Shikanai, K. Okamoto, G. Marutsuki, Y. Narukawa,T. Mukai, and Sg. Fujita (b) 337-343

Exciton localization in InGaN/GaN single quantum well structuresD. M. Graham, A. Soltani Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton,J. S. Barnard, C. J. Humphreys, and E. J. Thrush (b) 344-347

Exciton-exciton correlation effects on FWM in GaNSatoru Adachi, Hirotaka Sasakura, Shunichi Muto, Kouji Hazu, Takayuki Sota,Shigefusa F. Chichibu, and Takashi Mukai (b) 348-351

Localization characteristics of photoluminescence decay dynamics in an In^Ga^^s^^N/GaAssingle quantum well

M. Nakayama, K. Tokuoka, K. Nomura, T. Yamada, A. Moto, and S. Takagishi (b) 352-355

Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaNYasuo Koide, D. E. Walker Jr., B. D. White, L. J. Brillson, T. Itoh, R. L. McCreery,Masanori Murakami, S. Kamiyama, H. Amano, and I. Akasaki (b) 356-359

Impact of exciton localization on the optical properties of non-polar M-plane Ino.1Gao.9N/GaNmultiple quantum wells

Yue Jun Sun, Oliver Brandt, Sven Cronenberg, Holger T. Grahn, and Klaus H. Ploog . . . (b) 360-363

Contents 1969

Carrier capture times in InGaN/GaN multiple quantum wellsW. H. Fan, S. M. Olaizola, T. Wang, P. J. Parbrook, J.-P. R. Wells, D. J. Mowbray,M. S. Skolnick, and A. M. Fox (b) 364-367

Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wellsKoichi Okamoto, Shigeo Fujita, Yoichi Kawakami, and Axel Scherer (b) 368-371

Improvement of luminescence capability of Tb3+-related emission by A l / j a ^ NY. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, and H. Itoh (b) 372-375

Localized biexcitons in ALGa^^N ternary alloy epitaxial layersY. Yamada, C. Sasaki, Y. Ueki, T. Taguchi, S. Tanaka, and Y. Nakagawa (b) 376-379

Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisationinduced 2DEG

A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann,Y. Smorchkova, U. K. Mishra, and J. S. Speck (b) 380-383

Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantumwells at 1.5 urn

Gang Chen, R. Rapaport, O. Mitrofanov, C. Gmachl, and H. M. Ng (b) 384-387

Long-lived excitons up to 1 us in GaN/AIN self-assembled quantum dotsS. Kako, M. Miyamura, K. Hoshino, and Y. Arakawa (b) 388-391

The hot carrier dynamics in InGaN multi-quantum well structureA. Shikanai, K. Kojima, K. Omae, Y. Kawakami, Y. Narukawa, T. Mukai, and Sg. Fujita . (b) 392-395

Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerfaceRyuji Katayama, Masayuki Kuroda, Kentaro Onabe, and Yasuhiro Shiraki (c) 2597-2601

Polarized micro-photoluminescence spectroscopy of GaN nanocolumnsT. V. Shubina, V. N. Jmerik, S. V. Ivanov, D. D. Solnyshkov, N. A. Cherkashin,K. F. Karlsson, P. O. Holtz, A. Waag, P. S. Kop'ev, and B. Monemar (c) 2602-2605

Thickness dependence of transient absorption spectrum for InGaN thin filmsM.-S. Nomura, M. Arita, S. Ashihara, S. Kako, M. Nishioka, Y. Arakawa, T. Shimura,and K. Kuroda (c) 2606-2609

Quantum-well thickness dependence of stimulated emission in InGaN/GaN structuresS. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, Shih-Wei Feng,Yung-Chen Cheng, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang (c) 2610-2613

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxyV. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama,M. Iwaya, H. Amano, and I. Akasaki (c) 2614-2617

Cathodoluminescence studies of large bulk A1N crystalsE. Silveira, J. A. Freitas Jr., G. A. Slack, and L. J. Schowalter (c) 2618-2622

Effects of Al composition on luminescence properties of europium implanted Al^Ga^N (0 < x < 1)Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh, T. Shibata, andM. Tanaka (c) 2623-2626

Efficient two-photon absorption of bulk GaN in the near-infrared regionY. Toda, T. Matsubara, R. Morita, K. Hoshino, T. Someya, and Y. Arakawa (c) 2627-2630

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen contentGalnNAs layers

R. Intartaglia, T. Taliercio, B. Gil, P. Lefebvre, P. Valvin, T. Bretagnon, M.-A. Pinault,andE. Tournie (c)2631-2634

1972 Contents

Phase separation and superlattice formation by spontaneous vertical composition modulation inGaAs^N/GaAs

H. Dumont, L. Auvray, Y. Monteil, O. Marty, and G. Patriarche (c) 2749-2752

Spectroscopic ellipsometry study on the dielectric functions of GaPN alloysH. Kanaya, H. Yaguchi, Y. Hijikata, S. Yoshida, S. Miyoshi, and K. Onabe (c) 2753-2756

The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapordeposition

Masashi Tsukihara, Yoshiki Naoi, Hong-Dong Li, Tomoya Sugahara, and Shiro Sakai . . (c) 2757-2760

Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi-quantum wells grown by metalorganic chemical vapor deposition

J. Y. Park, T. S. Kim, T. V. Cuong, C. S. Park, and C.-H. Hong (c) 2761-2764

Hall effect measurement of InAsN alloy films grown directly on GaAs(OOl) substratesby RF-MBE

M. Kuroda, R. Katayama, S. Nishio, K. Onabe, and Y. Shiraki (c) 2765-2768

Electric properties of RF-MBE InGaAsN grown layerT. Suzuki, T. Yamaguchi, A. Yamamoto, and A. Hashimoto (c) 2769-2772

MOVPE growth and characterization of high-N content InGaPN alloy lattice-matched to GaPS. Sanorpim, F. Nakajima, R. Katayama, N. Nakadan, T. Kimura, K. Onabe, andY. Shiraki (c) 2773-2777

Microstructures, defects, and localization luminescence in InGaAsN alloy filmsF. Nakajima, S. Sanorpim, T. Yamamoto, E. Takuma, R. Katayama, H. Ichinose,K. Onabe, and Y. Shiraki (c) 2778-2781

Improvement in the luminescence efficiency of GaAsN alloys by photoexcitationH. Yaguchi, T. Morioke, T. Aoki, Y. Hijikata, S. Yoshida, H. Akiyama, N. Usami,D. Aoki, and K. Onabe (c) 2782-2784

Indium nitride

MBE-growth, characterization and properties of InN and InGaNY. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki, andT. Miyajima (a) 202-208

Narrow bandgap group Ill-nitride alloysJ. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, andWilliam J. Schaff (b) 412-416

Control of electron density in InN by Si doping and optical properties of Si-doped InNM. Higashiwaki, T. Inushima, and T. Matsui (b) 417-420

Photoluminescence and optical absorption edge for MOVPE-grown InNK. Sugita, H. Takatsuka, A. Hashimoto, and A. Yamamoto (b) 421-424

Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloysV. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk,A. V. Sakharov, D. A. Kurdyukov, M. V. Baidakova, V. A. Vekshin, S. V. Ivanov,J. Aderhold, J. Graul, A. Hashimoto, and A. Yamamoto (b) 425-428

Contents 1973

Effect of A1N buffer layer on the growth of InN epitaxial film on Si substrateT. Yamaguchi, Y. Saito, C. Morioka, K. Yorozu, T. Araki, A. Suzuki, and Y. N a n i s h i . . . (b) 429-432

High sensitivity, high resolution X-ray photoelectron analysis of InNMarie Wintrebert-Fouquet, K. Scott A. Butcher, and Motlan (c) 2785-2789

High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxyK. Xu, N. Hashimoto, B. Cao, T. Hata, W. Terashima, M. Yoshitani, Y. Ishitani, andA. Yoshikawa (c) 2790-2793

Fabrication of InN/Si heterojunctions with rectifying characteristicsMasahiro Yoshimoto, Yoshiaki Yamamoto, and Junji Saraie (c) 2794-2797

TEM characterization of InN films grown by RF-MBET. Araki, S. Ueta, K. Mizuo, T. Yamaguchi, Y. Saito, and Y. Nanishi (c) 2798-2801

Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substratesby electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, H. Yona, Y. Harada, A. Sasaki, and M. Yoshimoto (c) 2802-2805

Growth of wurtzite InN using MOVPE and its optical characteristicsT. Matsuoka, H. Okamoto, and M. Nakao (c) 2806-2809

Influence of substrate polarity on growth of InN films by RF-MBEFumie Matsuda, Yoshiki Saito, Tomo Muramatsu, Tomohiro Yamaguchi, Yuriko Matsuo,Akinori Koukitu, Tsutomu Araki, and Yasushi Nanishi (c) 2810-2813

Comparative study of InN growth on Ga- and N-polarity GaN templates by molecular-beamepitaxy

K. Xu, W. Terashima, T. Hata, N. Hashimoto, M. Yoshitani, B. Cao, Y. Ishitani, andA. Yoshikawa (c) 2814-2817

Correlation between strain, optical and electrical properties of InN grown by MBEV. Cimalla, Ch. Forster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher,R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, and W. Schaff (c) 2818-2821

Electronic structure of InN observed by Shubnikov-de Haas measurementsT. Inushima, M. Higashiwaki, T. Matsui, T. Takenobu, and M. Motokawa (c) 2822-2825

Formation of ,,air-gap" structure at a GaN epilayer/substrate interface by using an InN interlayerA. Yamamoto, Y. Hamano, T. Tanikawa, Bablu K. Ghosh, and A. Hashimoto (c) 2826-2829

Effect of growth interruption on In-rich InGaN/GaN single quantum well structuresSoon-Yong Kwon, Hyun Jin Kim, HyunseokNa, Hui-Chan Seo, Hee Jin Kim,Yoori Shin, Young-Woon Kim, Sukho Yoon, Hye Jeong Oh, Cheolsoo Sone,Yongjo Park, Yuanping Sun, Yong-Hoon Cho, and Euijoon Yoon (c) 2830-2833

The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor depositionHyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui-Chan Seo, Hee Jin Kim, Yoori Shin,Keon-Hun Lee, Young-Woon Kim, Sukho Yoon, Hye Jeong Oh, Cheolsoo Sone,Yongjo Park, Yong-Hoon Cho, Yuanping Sun, and Euijoon Yoon (c) 2834-2837

Infrared measurements of InN films at low temperaturesY. Ishitani, K. Xu, W. Terashima, N. Hashimoto, M. Yoshitani, T. Hata, andA. Yoshikawa (c) 2838-2841

InN metalorganic vapour phase epitaxy and ellipsometric characterisationM. Drago, T. Schmidtling, U. W. Pohl, S. Peters, and W. Richter (c) 2842-2845

1974 Contents

Growth of optically-active InN with AlInN buffer by plasma-assisted molecular beam epitaxyV. N. Jmerik, V. A. Vekshin, T. V. Shubina, V. V. Ratnikov, S. V. Ivanov, andB. Monemar (c) 2846-2850

Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applicationsOlivier Briot, Benedicte Maleyre, Sandra Ruffenach, Claire Pinquier, Francois Demangeot,and Jean Frandon (c) 2851-2854

Spin electronics

Nitrides as spintronic materialsTomaszDietl (b) 433-439

Optical and magnetic properties of the DyN/GaN superlatticeY. K. Zhou, M. S. Kim, N. Teraguchi, A. Suzuki, Y. Nanishi, and H. Asahi (b) 440-442

Optimization of the growth of Ga^^Mn^N epilayers using plasma-assisted MBES. Kuroda, E. Bellet-Amalric, X. Biquard, J. Cibert, R. Giraud, S. Marcet, andH.Mariette (b) 443-446

Ab initio materials design and Curie temperature of GaN-based ferromagnetic semiconductorsK. Sato, P. H. Dederichs, K. Araki, and H. Katayama-Yoshida (c) 2855-2859

Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(lll)Asubstrates

T. Suemasu, K. Yamaguchi, H. Tomioka, and F. Hasegawa (c) 2860-2863

Magnetic properties of the rare-earth-doped semiconductor GaEuNH. Tanaka, M. Hashimoto, S. Emura, A. Yanase, R. Asano, Y.-K. Zhou, H. Bang,K. Akimoto, T. Honma, N. Umesaki, and H. Asahi (c) 2864-2868

Growth and characterization of Ga^Cr^N with high Cr content grown on ZnO templatesJ. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada,andT. Yao (c) 2869-2873

Magnetic properties of rare-earth-doped GaNH. Bang, J. Sawahata, G. Piao, M. Tsunemi, H. Yanagihara, E. Kita, and K. Akimoto . . . (c) 2874-2877

Co-implantation of Mn + N into p-type GaN for high Tc ferromagnetismJeong Min Baik, Ho Won Jang, Hyun-Joon Shin, Min-Kyu Lee, Yoon Shon,Tae Won Kang, and Jong-Lam Lee (c) 2878-2881

Comparison of magnetic properties of GaMnN thin films grown by NH3-MBE at different growthtemperatures

P. P. Chen, H. Makino, J. J. Kim, and T. Yao (c) 2882-2885

General characterization

Thermal conductivity of GaN crystals grown by high pressure methodA. Jezowski, P. Stachowiak, T. Plackowski, T. Suski, S. Krukowski, M. Bockowski,I. Grzegory, B. Danilchenko, and T. Paszkiewicz (b) 447-450

Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photo-emission spectroscopy

Ho Won Jang, Kyu Wook Ihm, Tai-Hee Kang, Jung-Hee Lee, and Jong-Lam Lee (b) 451-454

Contents 1975

Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photo-nic crystal

J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard,D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne, andJ.P.Albert (b) 455-458

Thermoelectric properties of Al^n^N and InOsNJprepared by reactive radio frequency sputter-ing

S. Yamaguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto (c) 2886-2889

Others

Optical properties of ZnGeN2 epitaxial layerTakao Misaki, Akihiro Wakahara, Hiroshi Okada, and Akira Yoshida (c) 2890-2893

Author Index 2894

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Contents 1975



Thermoelectric properties of Al^In^N and InOsNTprepared by reactive radio frequency sputter-ing


Others


Author Index 2894


Contents 1975



Thermoelectric properties of Al^InJSI and InOsNfprepared by reactive radio frequency sputter-ing


Others


Author Index 2894


Documents

WILEY-VCH - GBV1956 Contents High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80% Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura,