Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module ......CAS325M12HM2 is the only All-Silicon Carbide Module from Wolfspeed that is housed in a low-profile High-Performance 62mm package

©2019 by System Plus Consulting | Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module | Sample 1

Wolfspeed CAS325M12HM2High-Performance All-SiC 1200V 325A Power Module Power Semiconductor report by Amine ALLOUCHE February 2019 – Sample

22 bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT

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Overview / Introductiono Executive Summaryo Marketo Reverse Costing

Methodologyo Glossary

Company Profile & Supply Chain

Physical Analysis

Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

Comparison

Related Reports

About System Plus

Executive Summary

The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 31% from 2017 - 2023. Theforecast for the value of the SiC power semiconductor market is about $1.5B by 2023. The reason for this relates to marketforces pushing for loss reduction, not only for the sake of improved efficiency but also for improved packages.

Wolfspeed/Cree CAS325M12HM2 represents a new generation of all-SiC power modules enabling unprecedented efficiency andpower density for high current power electronics. It allows systems designers to realize lighter weight systems and to achieveimprovements in power density compared to systems built with silicon-based technologies.

CAS325M12HM2 is the only All-Silicon Carbide Module from Wolfspeed that is housed in a low-profile High-Performance 62mmpackage resulting from Wolfspeed’s acquisition of APEI. It is an All-Silicon Carbide 1200V power module configured in a Half-Bridge topology. This module uses 1200V C2M SiC MOSFETs and 1200V Z-Rec Schottky diodes.

The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable this module to operate at 175°C, which is a key advantage for many industrial, aerospace, and automotive applications. The company claims the design is optimized to reap the benefits of SiC technology and boasts a 66% reduction in module inductance to 5.5nH comparingto competing products at 15nH.

This report presents a deep analysis of the CAS325M12HM2 module. Supported by a full teardown of the module’s componentsand housing, this report reveals Cree/Wolfspeed’s innovative assets to assemble its module in a High-Performance packaging.

This report includes an estimated manufacturing cost of all module’s components and its selling price analysis. It proposes a comparison with the SiC module CAS120M12BM2 from the same manufacturer. Also, a detailed comparison with Wolfspeed/Cree competitors’ 1200V SiC Modules solutions is included.

Moreover, we include a comparison with ST and Rohm’s 1200V SiC MOSFET and finally a comparison between 1200V Si IGBTs and SiC MOSFETs. These comparisons highlight differences in the electrical parameters, packaging, dies characteristics, and production costs.


Overview / Introduction

Company Profile & Supply Chain o Wolfspeed Profileo Wolfspeed Modules

Portfolioo Supply Chain

Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Cree Wolfspeed SiC Power Modules Portfolio

• Wolfspeed product portfolio proposes 7 SiC Modules for 1200V and 1700V.

• The CAS325M12HM2 is the only one with High-Performance package. It is a Full-SiC Module of 1200V and a current rating of 325A.




Physical Analysis o Synthesiso Packageo MOSFET Die Designo MOSFET Die Cross-Sectiono Diode Die Designo Diode Die Cross-Section


Cost Analysis


Comparison

Related Reports

About System Plus

Terminal lead 1

CAS325M12HM2 Sketch – Exploded View© 2016 Cree, Inc.

Picture from “Advanced SiC Devices and Modules Address System Challenges”

M4 Nut (x9)

Terminal lead 2

Terminal lead 3

Terminal pins (x20) on PCB

AlSiC Baseplate PCB

Screw (x4)

These Pins are not present on our sample

AMB

Package Housing

SiC MOSFET (xxxx)

Z-RecTM Diode (xxxx)

(xxx x) SiC MOSFET:

o Dimension:

xxx mm² (xxx mm x xxx mm)

o Electrical Connection: Brazed on AMB + xxx µm wire bonding

(xxx x) SiC Z-RecTM Diodes:

o Dimension:

xxx mm² (xxx mm x xxx mm)

o Electrical Connection:

Brazed on AMB + xxx µm wire bonding

Terminal leads (1, 2, 3) :

o Electrical Connection:

Brazed on AMB

Package High-Performance 62mm:

o Dimensions: 110.2mm x 65mm x 9.7mm

o Number of Terminal leads: 3 leads

Synthesis of the Physical Analysis






Cost Analysis


Comparison

Related Reports

About System Plus

Wolfspeed CAS325M12HM2 Datasheet

Module Housing Removed – Top Optical View

5 7 9 11 13

Z-RecTM Diodes

C2M MOSFETs

Highest Voltage Reference

Lowest Voltage Reference

Output Terminal

1

3

2

4 6 8 10 12

15 17 19 21 23

Half-Bridge Configuration

14 16 18 20 22






Cost Analysis


Comparison

Related Reports

About System Plus

Package Cross-Section

Package Cross-section tilted view – Optical View

1

2

3

Terminal lead #1

AMB Substrate Dimensions: xxx mm x xxx mm






Cost Analysis


Comparison

Related Reports

About System Plus

Package Cross-Section

Package Cross-section – Optical View

AlSiC Baseplate

12

3

Terminal leads 1&2

Terminal lead 3

Package Cross-section zoom-in – SEM View Package Cross-section – SEM View

Terminal lead

Brazing on lead

Solder on AMB

Cu

Cu

Si3N4 AMB

Si3N4

Cu

CuSolder on Baseplate

AlSiC Baseplate






Cost Analysis


Comparison

Related Reports

About System Plus

Counts

Terminal Lead and Soldering – EDX Analysis

Top Copper Layer

Bottom Copper Layer

o The Energy-dispersive X-ray spectroscopy (EDX) results shown above indicates that the terminal lead (2) is composed of xxx.

o The lead terminal is brazed from top and bottom on the AMB substrate with xxx .

12

34

5

678

Terminal lead

AMB

Pb

Pb

keV0

50

100

150

200

250

0 10.00

Counts

Region 3Pb

Pb

keV0

50

100

150

200

0 10.00

Region 1

Counts

Cu

Cu

Cu

keV0

500

1000

1500

2000

2500

3000

0 10.00

Region 2

Baseplate 10






Cost Analysis


Comparison

Related Reports

About System Plus

MOSFET die dimensions

MOSFET Die – Optical View

o Die dimensions:xxx mm² (xxx mm x xxx mm)

o There is no marking on thedie.

xxx

mm

xxx mm






Cost Analysis


Comparison

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About System Plus

Die Process – Ring

xxx µm

Gate Contact

SourceContact

xxx µm

Transistor process – Optical View

Transistor process – Optical View






Cost Analysis


Comparison

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About System Plus

Transistor Cross-Section – Optical View

• Die thickness: xxx µm (The substrate is thinned ~xxx µm from backside)

Die Cross-Section






Cost Analysis


Comparison

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About System Plus

Gate Cross-Section

Cross-Section – SEM view






Cost Analysis


Comparison

Related Reports

About System Plus

Die Cross-Section

Edge of the Die cross-section – SEM view

xxx µmGuard Ring :

Anode in Aluminum

SiC substrate

Top Left Guard Ring Close-up – Optical view

xxx µm

xxx µm

xxx µm

Guard Ring

Guard Ring Doping




Physical Analysis

Manufacturing Process Flowo Dies Process Flowo Dies Fab Unito Packaging Process Flowo Packaging Fab Unit

Cost Analysis


Comparison

Related Reports

About System Plus

MOSFET Process Flow (3/4)

0 0

00 00 000

00 00 000

0

Drawing not to Scale

Gate Poly

•Polysilicon deposition and pattern

Gate dielectric

•Dielectric: deposition and pattern

Metal contact

• xxx deposition and silicidation




Physical Analysis

Manufacturing Process Flowo Dies Process Flowo Dies Fab Unito Packaging Process Flowo Packaging Fab Unit

Cost Analysis


Comparison

Related Reports

About System Plus

Module Process Flow (4/5)

Test

• Continuity Test

Placement

• Baseplate soldering

• Silicone gel Dispensing

Thermal

• Curing

Drawing not to Scale

AlSiC Baseplate




Physical Analysis


Cost Analysiso Synthesiso MOSFET Die Costo Diode Die Costo Packaging Costo Module Cost


Comparison

Related Reports

About System Plus

MOSFET Front-End Cost

The front-end cost ranges from $xxx to $xxx according toyield variations.

The main part of the wafer cost is due to the xxx (xxx%).




Physical Analysis




Comparison

Related Reports

About System Plus

SiC Diode Wafer Cost per process steps




Physical Analysis




Comparison

Related Reports

About System Plus

SiC Diode Die Cost

The diode die cost ranges from $xxx to $xxx according to yieldvariations.

The Front-end manufacturing represents xxx% of thecomponent cost (xxx yield estimation).

Probe test, dicing and scrap account for xxx% of the componentcost.




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Cost Breakdown Cost Breakdown Cost Breakdown

Module cost $157.89 $142.34 $128.66

Manufacturer Gross Profit $145.75 +48% $131.39 +48% $118.77 +48%

Module price $303.64 $273.73 $247.43

Gross Margin 48.0%

Wolfspeed

Low Yield Medium Yield High Yield

Estimated Manufacturer Price

The module manufacturing cost ranges from$xxx to $xxx according to yield variations.

By taking into account a gross margin of 48%for Wolfspeed (2018 results), the moduleselling price is estimated to range from $xxx to$xxx according to yield variations.

$ 0.00

$ 50.00

$ 100.00

$ 150.00

$ 200.00

$ 250.00

$ 300.00

$ 350.00

Low Yield Medium Yield High Yield

$ 157.89$ 142.34

$ 128.66

$ 303.64

$ 273.73

$ 247.43

Cost & Price According to Yield Variation

Module cost Module price




Physical Analysis


Cost Analysis


Comparisono Comparison with

CAS120M12BM2o Cree vs Infineon vs Rohm

SiC Modules o ST vs Cree vs Rohm

1200V SiC MOSFETso 1200V Si IGBTs vs SiC

MOSFETs

Related Reports

About System Plus

Comparison Between Wolfspeed, Infineon and Rohm SiC Modules

Infineon CoolSiC 1200V 50A Trench MOSFET Module

DF11MR12W1M1_B11 Wolfspeed High-Performance, Half-Bridge

Module 1200V 325A CAS325M12HM2

Rohm 1200V 180A SiC power module BSM180D12P3C007




Physical Analysis


Cost Analysis






MOSFETs

Related Reports

About System Plus

Comparison Between STMicroelectronics, Cree and Rohm 1200V SiC MOSFET

MOSFET ManufacturerCurrent at

100°CCurrent density

Pitch Wafer thickness

C2M0040120D Cree 40A 2.19 9 µm 170 µm

BSM180D12P3C007 Rohm 36A 2.79 13 µm 355 µm

SCT30N120 ST 34A 2.42 10.7 µm 380 µm

C2M0040120D

STC30N120

BSM180D12P3C007

The comparison has been done with the C2M0040120D and not with theC2M0025120D to have three components with comparable values of current.




Physical Analysis


Cost Analysis






MOSFETs

Related Reports

About System Plus

Comparison Between STMicroelectronics, Cree and Rohm 1200V SiC MOSFET




Physical Analysis


Cost Analysis


Comparison

Feedback

About System Plus

POWER & COMPOUNDS• Rohm SiC MOSFET Gen3 Trench Design Family• Mitsubishi J1- Series 650V High-Power Modules for Automotive• ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete• STMicroelectronics 1200V SiC MOSFET STC30N120• 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison• Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics• Wolfspeed SiC 900V MOSFET• ROHM 1200V Trench SiC MOSFET• CREE 1700V SiC Module• CREE 1200V SiC Module

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Trends• Status of the Power Electronics Industry 2018

https://www.i-micronews.com/category-listing/product/status-of-the-power-electronics-industry-2018.html


https://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/


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https://www.i-micronews.com/category-listing/product/power-sic-2018-materials-devices-and-applications.html

https://www.i-micronews.com/category-listing/product/power-module-packaging-2018-material-market-and-technology-trends.html







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Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module ......CAS325M12HM2 is the only All-Silicon Carbide Module from Wolfspeed that is housed in a low-profile High-Performance 62mm package