TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Low Power Consumption
Wide Common-Mode and DifferentialVoltage Ranges
Low Input Bias and Offset Currents
Output Short-Circuit Protection
Low Total Harmonic Distortio n . . . 0.003% Typ
High Input Impedanc e . . . JFET-Input Stage
Latch-Up-Free Operation
High Slew Rat e . . . 13 V/µs Typ
Common-Mode Input Voltage RangeIncludes V CC+
description
The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previouslydeveloped operational amplifier family. Each of these JFET-input operational amplifiers incorporateswell-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices featurehigh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Offsetadjustment and external compensation options are available within the TL08x family.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of –55°C to 125°C.
symbols
+
–
+
–
OFFSET N1
IN+
IN–OUT
IN+
IN–OUT
TL082 (EACH AMPLIFIER)TL084 (EACH AMPLIFIER)
TL081
OFFSET N2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1997, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
On products compliant to MIL-PRF-38535, all parameters are testedunless otherwise noted. On all other products, productionprocessing does not necessarily include testing of all parameters.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
NC – No internal connection
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT1IN–1IN+
VCC+2IN+2IN–
2OUT
4OUT4IN–4IN+VCC–3IN+3IN–3OUT
TL084, TL084A, TL084BD, J, N, PW, OR W PACKAGE
(TOP VIEW)
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
4IN+NCVCC–NC3IN+
1IN+NC
VCC+NC
2IN+
TL084M . . . FK PACKAGE(TOP VIEW)
1IN
–1O
UT
NC
3OU
T3I
N –
4OU
T4I
N –
2IN
–2O
UT
NC
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NCVCC+NCOUTNC
NCIN–NCIN+NC
TL081M . . . FK PACKAGE(TOP VIEW)
NC
OF
FS
ET
N1
NC
OF
FS
ET
N2
NC
NC
NC
NC
NC
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC2OUTNC2IN–NC
NC1IN–
NC1IN+
NC
TL082M . . . FK PACKAGE(TOP VIEW)
NC
1OU
TN
C2I
N +
NC
NC
NC
NC
1
2
3
4
8
7
6
5
OFFSET N1IN–IN+
VCC–
NCVCC+OUTOFFSET N2
TL081, TL081A, TL081BD, JG, P, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT1IN–1IN+
VCC–
VCC+2OUT2IN–2IN+
TL082, TL082A, TL082BD, JG, P, OR PW PACKAGE
(TOP VIEW)
VC
C –
VC
C+
VC
C –
1
2
3
4
5
10
9
8
7
6
NCOFFSET N1
IN–IN+
VCC–
NCNCVCC+OUTOFFSET N2
TL081MU PACKAGE
(TOP VIEW)
1
2
3
4
5
10
9
8
7
6
NC1OUT
1IN–1IN+
VCC–
NCVCC+2OUT2IN–2IN+
TL082MU PACKAGE
(TOP VIEW)
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT O
PERATIONAL AM
PLIFIERSS
LOS
081D – F
EB
RU
AR
Y 1977 – R
EV
ISE
D F
EB
RU
AR
Y 1997
PO
ST
OF
FIC
E B
OX
655303 DA
LLAS
, TE
XA
S 75265
•3
AVAILABLE OPTIONS
PACKAGED DEVICESCHIP
TAVIOmaxAT 25°C
SMALLOUTLINE
(D008)
SMALLOUTLINE
(D014)
CHIPCARRIER
(FK)
CERAMICDIP(J)
CERAMICDIP(JG)
PLASTICDIP(N)
PLASTICDIP(P)
TSSOP(PW)
FLATPACK
(U)
FLATPACK
(W)
CHIPFORM
(Y)
15 mV6 mV3 mV
TL081CDTL081ACDTL081BCD
— — — — —TL081CPTL081ACPTL081BCP
TL081CPW— — —
0°Cto
70°C
15 mV6 mV3 mV
TL082CDTL082ACDTL082BCD
— — — — —TL082CPTL082ACPTL082BCP
TL082CPW— —
TL082Y
15 mV6 mV3 mV
—TL084CDTL084ACDTL084BCD
— — —TL084CNTL084ACNTL084BCN
—TL084CPW
— —TL084Y
–40°Cto
85°C
6 mV6 mV6 mV
TL081IDTL082IDTL084ID TL084ID
— — —TL084IN
TL081IPTL082IP — — — —
–55°Cto
125°C
6 mV6 mV9 mV
— —TL081MFKTL082MFKTL084MFK TL084MJ
TL081MJGTL082MJG — — —
TL081MUTL082MU
TL084MW—
The D package is available taped and reeled. Add R suffix to the device type (e.g., TL081CDR).
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic (each amplifier)
C1
VCC+
IN+
VCC–
OFFSET N1
1080 Ω 1080 Ω
IN–
TL081 Only
64 Ω
128 Ω
64 Ω
OUT
Component values shown are nominal.
OFFSET N2
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TL082Y chip information
These chips, when properly assembled, display characteristics similar to the TL082. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF CHIP.
+
–1OUT
1IN+
1IN–
VCC+(8)
(6)
(3)
(2)
(5)
(1)
–
+(7) 2IN+
2IN–2OUT
(4)
VCC–
61
61
(7) (6) (5)
(4)(8)
(3)(2)(1)
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TL084Y chip information
These chips, when properly assembled, display characteristics similar to the TL084. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (11) IS INTERNALLY CONNECTEDTO BACKSIDE OF CHIP.
+
–1OUT
1IN+
1IN–
VCC+(4)
(6)
(3)
(2)
(5)
(1)
–
+(7) 2IN+
2IN–2OUT
(11)VCC–
+
–3OUT
3IN+
3IN–
(13)
(10)
(9)
(12)
(8)
–
+(14)4OUT
4IN+
4IN–
105
62
(13) (12) (11) (10) (9)
(8)
(7)
(6)(4)(3)(2)
(1)
(14)
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †
TL08_CTL08_ACTL08_BC
TL08_I TL08_M UNIT
Supply voltage, VCC+ (see Note 1) 18 18 18 V
Supply voltage VCC– (see Note 1) –18 –18 –18 V
Differential input voltage, VID (see Note 2) ± 30 ± 30 ± 30 V
Input voltage, VI (see Notes 1 and 3) ±15 ±15 ±15 V
Duration of output short circuit (see Note 4) unlimited unlimited unlimited
Continuous total power dissipation See Dissipation Rating Table
Operating free-air temperature range, TA 0 to 70 – 40 to 85 – 55 to 125 °C
Storage temperature range, Tstg – 65 to 150 – 65 to 150 – 65 to 150 °C
Case temperature for 60 seconds, TC FK package 260 °C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds J or JG package 300 °C
Lead temperature 1,6 mm (1/16 inch) from case for 10 secondsD, N, P, orPW package
260 260 °C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.2. Differential voltages are at IN+ with respect to IN–.3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C
POWER RATINGDERATINGFACTOR
DERATEABOVE TA
TA = 70°CPOWER RATING
TA = 85°CPOWER RATING
TA = 125°CPOWER RATING
D (8 pin) 680 mW 5.8 mW/°C 32°C 460 mW 373 mW N/A
D (14 pin) 680 mW 7.6 mW/°C 60°C 604 mW 490 mW N/A
FK 680 mW 11.0 mW/°C 88°C 680 mW 680 mW 273 mW
J 680 mW 11.0 mW/°C 88°C 680 mW 680 mW 273 mW
JG 680 mW 8.4 mW/°C 69°C 672 mW 546 mW 210 mW
N 680 mW 9.2 mW/°C 76°C 680 mW 597 mW N/A
P 680 mW 8.0 mW/°C 65°C 640 mW 520 mW N/A
PW (8 pin) 525 mW 4.2 mW/°C 25°C 336 mW N/A N/A
PW (14 pin) 700 mW 5.6 mW/°C 25°C 448 mW N/A N/A
U 675 mW 5.4 mW/°C 25°C 432 mW 351 mW 135 mW
W 680 mW 8.0 mW/°C 65°C 640 mW 520 mW 200 mW
Template R
elease Date: 7–11–94
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT O
PERATIONAL AM
PLIFIERSS
LOS
081D – F
EB
RU
AR
Y 1977 – R
EV
ISE
D F
EB
RU
AR
Y 1997
8P
OS
T O
FF
ICE
BO
X 655303 D
ALLA
S, T
EX
AS
75265•
electrical characteristics, V CC± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA†
TL081CTL082CTL084C
TL081ACTL082ACTL084AC
TLO81BCTL082BCTL084BC
TL081ITL082ITL084I UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
VIO Input offset voltage VO = 0 RS = 50 Ω25°C 3 15 3 6 2 3 3 6
mVVIO Input offset voltage VO = 0 RS = 50 ΩFull range 20 7.5 5 9
mV
αVIO
Temperaturecoefficient of inputoffset voltage
VO = 0 RS = 50 Ω Full range 18 18 18 18 µV/°C
IIO Input offset current‡ VO = 025°C 5 200 5 100 5 100 5 100 pA
IIO Input offset current‡ VO = 0Full range 2 2 2 10 nA
IIB Input bias current‡ VO = 025°C 30 400 30 200 30 200 30 200 pA
IIB Input bias current‡ VO = 0Full range 10 7 7 20 nA
VICRCommon-mode input voltage range
25°C ±11–12
to15
±11–12
to15
±11–12
to15
±11–12
to15
V
M i kRL = 10 kΩ 25°C ±12 ±13.5 ±12 ±13.5 ±12 ±13.5 ±12 ±13.5
VOMMaximum peakoutput voltage swing
RL ≥ 10 kΩFull range
±12 ±12 ±12 ±12 Vout ut voltage swing
RL ≥ 2 kΩFull range
±10 ±12 ±10 ±12 ±10 ±12 ±10 ±12
AVD
Large-signaldifferential voltage
VO = ±10 V, RL ≥ 2 kΩ 25°C 25 200 50 200 50 200 50 200V/mVAVD differential voltage
amplification VO = ±10 V, RL ≥ 2 kΩ Full range 15 25 25 25V/mV
B1 Unity-gain bandwidth 25°C 3 3 3 3 MHz
ri Input resistance 25°C 1012 1012 1012 1012 Ω
CMRRCommon-mode VIC = VICRmin,
25°C 70 86 75 86 75 86 75 86 dBCMRR rejection ratio VO = 0, RS = 50 Ω 25°C 70 86 75 86 75 86 75 86 dB
kSVR
Supply voltagerejection ratio
VCC = ±15 V to ± 9 V,25°C 70 86 80 86 80 86 80 86 dBkSVR rejection ratio
(∆VCC± /∆VIO)VO = 0, RS = 50 Ω 25°C 70 86 80 86 80 86 80 86 dB
ICCSupply current (per amplifier)
VO = 0, No load 25°C 1.4 2.8 1.4 2.8 1.4 2.8 1.4 2.8 mA
VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 120 120 dB
† All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is 0°C to 70°C for TL08_C, TL08_AC,TL08_BC and –40°C to 85°C for TL08_I.
‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in Figure 17. Pulse techniques must be usedthat maintain the junction temperature as close to the ambient temperature as possible.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V CC ± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS† TTL081M, TL082M TL084M
UNITPARAMETER TEST CONDITIONS† TA MIN TYP MAX MIN TYP MAXUNIT
VIO Input offsetvoltage VO = 0 RS = 50 Ω25°C 3 6 3 9
mVVIO Input offsetvoltage VO = 0, RS = 50 Ω–55°C to 125°C 9 15
mV
αVIO
Temperature coefficient of input offset voltage
VO = 0 RS = 50 Ω –55°C to 125°C 18 18 µV/°C
IIO Input offset current‡ VO = 025°C 5 100 5 100 pA
IIO Input offset current‡ VO = 0125°C 20 20 nA
IIB Input bias current‡ VO = 025°C 30 200 30 200 pA
IIB Input bias current‡ VO = 0125°C 50 50 nA
VICRCommon-mode inputvoltage range
25°C ±11±12
to15
±11± 12
to15
V
M i kRL = 10 kΩ 25°C ±12 ±13.5 ±12 ±13.5
VOMMaximum peakoutput voltage swing
RL ≥ 10 kΩ55°C to 125°C
±12 ±12 Vout ut voltage swing
RL ≥ 2 kΩ–55°C to 125°C
±10 ±12 ±10 ±12
AVD
Large-signaldifferential voltage
VO = ±10 V, RL ≥ 2 kΩ 25°C 25 200 25 200V/mVAVD differential voltage
amplification VO = ±10 V, RL ≥ 2 kΩ –55°C to 125°C 15 15V/mV
B1 Unity-gain bandwidth 25°C 3 3 MHz
ri Input resistance 25°C 1012 1012 Ω
CMRRCommon-moderejection ratio
VIC = VICRmin,VO = 0, RS = 50 Ω 25°C 80 86 80 86 dB
kSVR
Supply voltagerejection ratio(∆VCC± /∆VIO)
VCC = ±15 V to ±9 V,VO = 0, RS = 50 Ω 25°C 80 86 80 86 dB
ICCSupply current(per amplifier)
VO = 0, No load 25°C 1.4 2.8 1.4 2.8 mA
VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB
† All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified.‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in
Figure 17. Pulse techniques must be used that maintain the junction temperatures as close to the ambient temperature as is possible.
operating characteristics, V CC± = ±15 V, TA = 25°C (unless otherwise noted)PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 8∗ 13
SR Slew rate at unity gain VI = 10 V, RL = 2 kΩ, CL = 100 pF,5∗ V/µs
TA = – 55°C to 125°C, See Figure 15∗
tr Rise timeVI = 20 mV RL = 2 kΩ CL = 100 pF See Figure 1
0.05 µs
Overshoot factorVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1
20%
V Equivalent input noise RS = 20 Ωf = 1 kHz 18 nV/√Hz
VnEquivalent in ut noisevoltage RS = 20 Ω
f = 10 Hz to 10 kHz 4 µV
InEquivalent input noisecurrent RS = 20 Ω, f = 1 kHz 0.01 pA/√Hz
THD Total harmonic distortion VIrms = 6 V,f = 1 kHz
AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ, 0.003%
∗On products compliant to MIL-PRF-38535, this parameter is not production tested.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V CC± = ±15 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS†TL082Y, TL084Y
UNITPARAMETER TEST CONDITIONS†MIN TYP MAX
UNIT
VIO Input offset voltage VO = 0, RS = 50 Ω 3 15 mV
αVIO Temperature coefficient of input offset voltage VO = 0, RS = 50 Ω 18 µV/°C
IIO Input offset current‡ VO = 0, 5 200 pA
IIB Input bias current‡ VO = 0, 30 400 pA
VICR Common-mode input voltage range ±11–12
to15
V
VOM Maximum peak output voltage swing RL = 10 kΩ, ±12 ±13.5 V
AVD Large-signal differential voltage amplification VO = ±10 V, RL ≥ 2 kΩ 25 200 V/mV
B1 Unity-gain bandwidth 3 MHz
ri Input resistance 1012 Ω
CMRR Common mode rejection ratioVIC = VICRmin, VO = 0, 70 86
dBCMRR Common-mode rejection ratio IC ICR ,RS = 50 Ω
O ,
70 86dB
kSVR Supply voltage rejection ratio (∆VCC± /∆VIO)VCC = ±15 V to ± 9 V, 70 86
dBkSVR Supply voltage rejection ratio (∆VCC± /∆VIO) CC ,VO = 0, RS = 50 Ω 70 86
dB
ICC Supply current (per amplifier) VO = 0, No load 1.4 2.8 mA
VO1/VO2 Crosstalk attenuation AVD = 100 120 dB
† All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified.‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in
Figure 17. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as possible.
operating characteristics, V CC± = ±15 V, TA = 25°CPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR Slew rate at unity gain VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 8 13 V/µs
tr Rise timeVI = 20 mV RL = 2 kΩ CL = 100 pF See Figure 1
0.05 µs
Overshoot factorVI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1
20%
V Equivalent input noise voltage RS = 20 Ωf = 1 kHz 18 nV/√Hz
Vn Equivalent input noise voltage RS = 20 Ωf = 10 Hz to 10 kHz 4 µV
In Equivalent input noise current RS = 20 Ω, f = 1 kHz 0.01 pA/√Hz
THD Total harmonic distortion VIrms = 6 V,f = 1 kHz
AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ, 0.003%
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Figure 1
VI
CL = 100 pF RL = 2 kΩ
+
–
OUT
Figure 2
VI
10 kΩ
1 kΩ
RL CL = 100 pF
+
–
OUT
Figure 3
100 kΩ
C2
C1
N1
500 pF
+
–
OUT
IN–
Figure 4
TL081
N2
N1
100 kΩ
1.5 kΩ
VCC–
+
–
OUT
IN–
IN+
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Frequency 5, 6, 7
VOM Maximum peak output voltage
vs Frequencyvs Free-air temperature
5, 6, 78
VOM Maximum peak output voltagevs Load resistance 9vs Supply voltage 10
Large signal differential voltage amplificationvs Free-air temperature 11
AVDLarge-signal differential voltage amplification
vs Frequency 12VDDifferential voltage amplification vs Frequency with feed-forward compensation 13
PD Total power dissipation vs Free-air temperature 14
ICC Supply currentvs Free-air temperature 15
ICC Supply currentvs Supply voltage 16
IIB Input bias current vs Free-air temperature 17
Large-signal pulse response vs Time 18
VO Output voltage vs Elapsed time 19
CMRR Common-mode rejection ratio vs Free-air temperature 20
Vn Equivalent input noise voltage vs Frequency 21
THD Total harmonic distortion vs Frequency 22
Figure 5
±15
±12.5
±10
±7.5
±5
±2.5
0
f – Frequency – Hz
100 1 k 10 k 100 k 1 M 10 M
RL = 10 kΩTA = 25°CSee Figure 2
VCC± = ±15 V
VCC± = ±10 V
VCC± = ±5 V
– M
axim
um P
eak
Out
put V
olta
ge –
V
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREQUENCY
VO
M
Figure 6
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREQUENCY
VCC± = ±5 V
VCC± = ±10 V
VCC± = ±15 V
RL = 2 kΩTA = 25°C
±15
±12.5
±10
±7.5
±5
±2.5
0
f – Frequency – Hz
100 1 k 10 k 1 M 10 M
See Figure 2
100 k
– M
axim
um P
eak
Out
put V
olta
ge –
VV
OM
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 7
0
±2.5
±5
±7.5
±10
±12.5
±15
10 k 40 k 100 k 400 k 1 M 4 M 10 M
VCC± = ±15 VRL = 2 kΩSee Figure 2
TA = –55°C
TA = 25°C
TA = 125°C
f – Frequency – Hz
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREQUENCY
– M
axim
um P
eak
Out
put V
olta
ge –
VV
OM
Figure 8
±12.5
±10
±7.5
±5
±2.5
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
– 75 – 50 – 25 0 25 50 75 100 125
±15
0
ÎÎÎÎÎÎÎÎÎÎ
RL = 10 kΩ
ÎÎÎÎÎRL = 2 kΩ
VCC± = ±15 VSee Figure 2
– M
axim
um P
eak
Out
put V
olta
ge –
VV
OM
TA – Free-Air Temperature – °C
Figure 9
0.10
RL – Load Resistance – k Ω10
±15
±2.5
±5
±7.5
±10
±12.5
VCC± = ±15 VTA = 25°CSee Figure 2
0.2 0.4 0.7 1 2 4 7
MAXIMUM PEAK OUTPUT VOLTAGEvs
LOAD RESISTANCE
– M
axim
um P
eak
Out
put V
olta
ge –
VV
OM
Figure 10
00
|VCC± | – Supply Voltage – V
16
±15
2 4 6 8 10 12 14
±2.5
±5
±7.5
±10
±12.5
RL = 10 kΩTA = 25°C
MAXIMUM PEAK OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
– M
axim
um P
eak
Out
put V
olta
ge –
VV O
M
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
700
70
7
–751
TA – Free-Air Temperature – °C125
1000
–50 –25 0 25 50 75 100
2
4
10
20
40
100
200
400
VCC± = ±15 VVO = ±10 VRL = 2 kΩ
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsFREE-AIR TEMPERATURE
– L
arge
-Sig
nal D
iffer
entia
lA
VD
Volta
ge A
mpl
ifica
tion
– V
/mV
Figure 11
180°
135°
90 °
45 °
0 °
Phase Shift(right scale)
TA = 25°CRL = 10 kΩVCC± = ±5 V to ±15 V
Differential VoltageAmplification
(left scale)
105
104
103
102
101
1 M100 k10 k1 k10010
106
10 M
f – Frequency – Hz
11
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsFREQUENCY
Pha
se S
hift
– L
arge
-Sig
nal D
iffer
entia
lA
VD
Volta
ge A
mpl
ifica
tion
– V
/mV
Figure 12
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 13
See Figure 3TA = 25°CC2 = 3 pF
VCC± = ±15 V
105
104
103
102
10
1 M100 k10 k1 k
106
10 M
f – Frequency With Feed-Forward Compensation – Hz
1100
DIFFERENTIAL VOLTAGE AMPLIFICATIONvs
FREQUENCY WITH FEED-FORWARD COMPENSATION
– D
iffer
entia
l Vol
tage
Am
plifi
catio
n –
V/m
VA
VD
Figure 14
–750
– To
tal P
ower
Dis
sipa
tion
– m
W
TA – Free-Air Temperature – °C125
250
–50 –25 0 25 50 75 100
25
50
75
100
125
150
175
200
225VCC± = ±15 VNo SignalNo Load
TL084, TL085
TL082, TL083
TL081
TOTAL POWER DISSIPATIONvs
FREE-AIR TEMPERATURE
PD
Figure 15
– S
uppl
y C
urre
nt –
mA
–750
TA – Free-Air Temperature – °C125
2.0
–50 –25 0 25 50 75 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8VCC± = ±15 VNo SignalNo Load
SUPPLY CURRENT PER AMPLIFIERvs
FREE-AIR TEMPERATURE
I CC
±
Figure 16
00
|VCC± | – Supply Voltage – V
16
2.0
2 4 6 8 10 12 14
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 TA = 25°CNo SignalNo Load
SUPPLY CURRENTvs
SUPPLY VOLTAGE
– S
uppl
y C
urre
nt –
mA
I CC
±
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 17
– 500.01
– In
put B
ias
Cur
rent
– n
A
TA – Free-Air Temperature – °C125
100
– 25 0 25 50 75 100
0.1
1
10
VCC± = ± 15 V
INPUT BIAS CURRENTvs
FREE-AIR TEMPERATURE
I IB
Figure 18
VCC± = ±15 VRL = 2 k ΩCL = 100 pFTA = 25°C
Output
4
2
0
– 2
– 4
32.521.510.50
6
3.5
t – Time – µs
Inpu
t and
Out
put V
olta
ges
– V
– 6
VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE
Input
Figure 19
– 4
– O
utpu
t Vol
tage
– m
V
t – Elapsed Time – µs
1.2
28
0 0.2 0.4 0.6 0.8 1.0
0
4
8
12
16
20
24
OUTPUT VOLTAGEvs
ELAPSED TIME
V O
VCC± = ±15 VRL = 2 k ΩCL = 100 pFTA = 25°CSee Figure 1
Figure 20
RL = 10 kΩVCC± = ±15 V
88
87
86
85
84
1007550250– 25– 50
89
125
TA – Free-Air Temperature – °C
CM
RR
– C
omm
on-M
ode
Rej
ectio
n R
atio
– d
B
83– 75
COMMON-MODE REJECTION RATIOvs
FREE-AIR TEMPERATURE
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS †
Figure 21
100
– E
quilv
alen
t Inp
ut N
oise
Vol
tage
–
f – Frequency – Hz
100 k
50
10
20
30
40
VCC± = ±15 VAVD = 10RS = 20 ΩTA = 25°C
40 100 400 1 k 4 k 10 k 40 k
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
Vn
nV/
Hz
Figure 22
0.001
TH
D –
Tot
al H
arm
onic
Dis
tort
ion
– %
1VCC± = ±15 VAVD = 1VI(RMS) = 6 VTA = 25°C
40 k10 k4 k1 k400 100 k
f – Frequency – Hz
10
0.004
0.01
0.04
0.1
0.4
TOTAL HARMONIC DISTORTIONvs
FREQUENCY
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
APPLICATION INFORMATION
Figure 23
+
–
–15 V
15 VOutput
1 kΩ
9.1 kΩ3.3 kΩ
CF = 3.3 µF
RF = 100 kΩ
3.3 kΩ
TL081
f =2π RF CF
1
Figure 24
+
–
R1
C1 C2R3
C3 VCC–
VCC+
TL081OutputInput
R2
R1 = R2 = 2(R3) = 1.5 MΩ
fo =2π R1 C1
1= 1 kHz
C1 = C2 = = 110 pFC32
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
Input
–
+
+
–
TL084 Output C
Output BTL084
–
+
VCC+
Output ATL084
–
+VCC+
TL084
VCC+100 kΩ
100 µF
1 µF
1 MΩ
100 kΩ
100 kΩ 100 kΩ
VCC+
VCC+
Figure 25. Audio-Distribution Amplifier
+
–
+
–
88.4 kΩ
18 pF
VCC+
VCC–
18 pF
18 pF
88.4 kΩ
88.4 kΩ
1N4148
1N4148
VCC–
VCC+
1 kΩ
– 15 V
6 cos ωt
15 V18 kΩ
(see Note A)
1 kΩ
6 sin ωt
1/2TL082 1/2
TL082
18 kΩ (see Note A)
NOTE A: These resistor values may be adjusted for a symmetrical output.
Figure 26. 100-KHz Quadrature Oscillator
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
1/41/4
Output BOutput A
+
–
1.5 kΩ VCC–
43 kΩ
220 pF
43 kΩ
VCC+
30 kΩ
VCC+43 kΩ
VCC–
+
–
16 kΩ
43 kΩ
Input220 pF 220 pF
16 kΩ
+
–
VCC–
VCC+
30 kΩ
VCC+
43 kΩ
220 pF
43 kΩ
VCC–
+
–
1.5 kΩ
1/4TL084
TL084
1/4TL084
TL084
2 kHz/divSecond-Order Bandpass Filterfo = 100 kHz, Q = 30, GAIN = 4
2 kHz/divCascaded Bandpass Filter
fo = 100 kHz, Q = 69, GAIN = 16
Output A
OutputB
Figure 27. Positive-Feedback Bandpass Filter
TL081, TL081A, TL081B, TL082, TL082A, TL082BTL082Y, TL084, TL084A, TL084B, TL084YJFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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