Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 1
Integrated Transmitter for 100 Gb/s OOK Connectivity Based on Polymer Photonics and InP-DHBT Electronics
V. Katopodis(1), Ch. Kouloumentas(1), A. Konczykowska(2), F. Jorge(2), P. Groumas(1), Z. Zhang(3), A. Beretta(4), A. Dede(4), J.-Y. Dupuy(2), V.
Nodjiadjim(2), Giulio Cangini(5), G. Von Büren(5), E. Miller(5), R. Dinu(5), N. Keil(3), H.-G. Bach(3), N. Grote(3), A. Vannucci(4), and H. Avramopoulos(1)
(1)National Technical University of Athens, Zografou 15573, Athens, Greece (2) III-V Lab, Route de Nozay, Marcoussis, 91460 France (3) Fraunhofer Institute for Telecommunications, HHI, Berlin 10587, Germany (4) Linkra Srl, Via S.Martino 7, 20864 Agrate Brianza (MB) Italy (5) GigOptix Inc.19910 North Creek Parkway Suite 100, Bothell, WA, 98011, USA
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 2
Presentation Outline
• Intro – Why serial 100Gb/s connectivity
• Technical solutions and our approach
• Transmitter device and experiment at 80-100 Gb/s
•Next step
• Conclusions
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 3
Why serial 100G connectivity?
Despite current achievements on 100 GbE interconnection, efforts on higher bandwidth transceivers are ongoing • A robust solution for 100 Gb/s NRZ-OOK connectivity has
the potential to revolutionize datacom applications
Number of components Footprint Cost
Simplicity Robustness
Energy efficiency
• High-speed modulators and the underlying technology for high-speed electronics may:
Define a new base for operating baud-rates
400G and 1T systems Parallelism
High-order formats
Coherence technology
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 4
State of the art on 100G optical modulators
Two technologies with proven 100G potential
InP travelling wave EAM (InP-TWEAM)
• Amplitude modulation only
M. Chacinski et al, JLT 27, 16, 2009
S. R. Nuccio et al, OFC 2011, JThA30
Mach-Zehnder modulator based on electro-optic polymers operating at 100 Gb/s
Single device demonstrations rather than complete transmitter solutions
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 5
High speed electronics so far…
InP-DHBT technology has a proven potential for:
• High speed operation
• High breakdown voltage
2:1 MUX and RF-drivers based on InP-DHBT technology and
operating at 100 Gb/s have already been demonstrated
However:
they have never been integrated with the optical part of 100G transmitter in order to improve performance and reduce cost
HECTO project HECTO project
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 6
Optical sub-assembly
• Single mode waveguides
• Vpi =3.5 V
• High EO coefficient of the core material when poled (65 pm/V)
• Mach-Zehnder modulator on EO polymer platform
• Hybrid integration of an InP DFB laser at 1550 nm
• 2 dB loss at the polymer/InP interface
• 90o rotation of the TE laser due to the properties of the MZM
1.1 cm
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 7
Integration of MUX and RF-driving functionalities in a single circuit
Developing an integrated 100G transmitter
Development of a MUX-DRV circuit using 0.7 µm InP-DHBT technology
It receives two 50 Gb/s data signals and a 50 GHz input clock
1.5 mm
1.2 mm
2x2V differential output
Power consumption equal to 2W
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 8
Assembly and packaging
Optical sub-assembly Output fiber
MUX-DRV chip Data1 Data2 Clock
6.5 cm
2 cm
Alumina substrate
Alumina stiplines (50 Ohm impedance) at the MUX-DRV input
Short (<150 µm) wire-bonds at the MUX-DRV output
Lensed fiber at the optical output (1.5 dB coupling loss)
8.5 dB total optical loss
0.8 dBm output power at the transmission peak of the MZM
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 9
Generation of 231-1 PRBS data signals at 80 to 100 GB/s
1:2 DEMUX using EAM and 1:4 electrical DEMUX to acquire 8x10Gb/s channels
BER measurements on all 8x10Gb/s channels
Experimental setup
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 10
Eye-diagram-based evaluation
Experimental results
Timing-jitter (rms) at all data rates <1 ps
0.5 nm 10 dB/div 10 ps
10 ps
10 ps
0.5 nm 10 dB/div
0.5 nm 10 dB/div
ER = 14.1 dB
ER = 13.6 dB
ER = 13.5 dB
80 Gb/s
90 Gb/s
100 Gb/s
Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 11
• 80 Gb/s stream was 1:2 demultiplexed using EAM
BER measurements
• Further demultiplexing to 10 Gb/s using electrical DEMUX
10 ps/div 10 ps/div Tributary 1 Tributary 2
10 ps/div Reference
Lower power penalty at 80G as well as error-free operation at 100G is expected with shorter optical switching windows
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Summary
• Presentation of the first integrated transmitter for NRZ-OOK operation directly at 100 Gb/s.
• The transmitter relies on a EO polymer Mach-Zehnder modulator and the hybrid integration of:
• Evaluation through eye-diagrams and BER measurements in 80-100 Gb/s reveal high-quality performance.
1550 nm DFB laser
InP-DHBT MUX-DRV electronic circuit.
• Next steps include:
The use of new MUX-DRV designs
Complex monolithic and hybrid integration on the EO platform for modules of higher functionality
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Acknowledgment
www.ict-polysys.eu
Thank you for your attention!
The work is supported by EU Commission