N-Channel 100V (D-S) MOSFET
MEE3712H
01 May, 2018-V1.1
Ordering Information: MEE3712H (Pb-free)
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current* TC=25℃
ID 57.5
A TC=70℃ 46
Single pulse Avalanche Energy L=0.5mH TC=25℃ IAS 22 A
Single pulse Avalanche Energy L=0.5mH TC=25℃ EAS 121 mJ
Pulsed Drain Current IDM 230 A
Maximum Power Dissipation* TC=25℃
PD 125
W TC=70℃ 80
Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃
Thermal Resistance-Junction to Case* RθJC 1 ℃/W
GENERAL DESCRIPTION
The MEE3712H is a N-Channel enhancement mode power field effect
transistor, using Force-MOS patented Extended Trench Gate (ETG)
technology. This advanced technology is especially tailored to minimize
on state resistance and gate charge, and enhance avalanche capability.
These devices are particularly suited for medium voltage application
such as charger, adapter, notebook computer power management and
other lighting dimming powered circuits, and low in-line power loss that
are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦18mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● Synchronous Rectification
● Load Switch
PIN CONFIGURATION
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
*The device mounted on 1in2 FR4 board with 2 oz copper
(TO-263)
Top View
DCC正式發行
N-Channel 100V (D-S) MOSFET
MEE3712H
02 May, 2018-V1.1
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Symbol Parameter Conditions Min Typ Max Unit
STATIC
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 2 4 V
IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA
IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V 1 μA
RDS(ON) Drain-Source On-State Resistancea VGS=10V, ID=35A 15 18 mΩ
VsD Diode Forward Voltage Is=2.7A, VGS=0V, 0.7 1.2 V
DYNAMIC
Qg Total Gate Charge
VDS=50V,VGS=10V, ID=35A
32.8
nC Qgs Gate-Source Charge 8
Qgd Gate-Drain Charge 11.4
Ciss Input Capacitance
VDS=30V,VGS=0V,f=1MHz
1890
pF Coss Output Capacitance 572
Crss Reverse Transfer Capacitance 27
td(on) Turn-On Delay Time VDS=50V, RL =50Ω
VGS=10V, RG=6Ω
ID=1A
20
ns tr Turn-On Rise Time 21
td(off) Turn-Off Delay Time 55
tf Turn-Off Fall Time 59
Electrical Characteristics (TJ =25℃ Unless Otherwise Specified)
DCC正式發行
N-Channel 100V (D-S) MOSFET
MEE3712H
03 May, 2018-V1.1
Typical Characteristics (TJ =25℃ Noted)
DCC正式發行
N-Channel 100V (D-S) MOSFET
MEE3712H
04 May, 2018-V1.1
Typical Characteristics (TJ =25℃ Noted)
DCC正式發行
N-Channel 100V (D-S) MOSFET
MEE3712H
05 May, 2018-V1.1
symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.4 4.72 0.17 0.19
B 1.17 1.55 0.05 0.06
b 0.76 0.89 0.03 0.04
b1 1.22 1.37 0.05 0.05
b2 0.33 0.6 0.01 0.02
C 1.22 1.35 0.05 0.05
D 9.8 10.25 0.39 0.40
E 8.99 9.3 0.35 0.37
e1 2.44 2.64 0.10 0.10
e2 4.98 5.18 0.20 0.20
L1 14.9 15.79 0.59 0.62
L2 1.94 2.6 0.08 0.10
L3 1.47 1.75 0.06 0.07
TO-263 Package Outline
TO252-3L Package Outline
TO-252-3L Package Outline
DCC正式發行
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