N80 Units 2
PTP2 N80
800V N-Channel MOSFET
Features
Low Intrinsic Capacitances
Excellent Switching Characteristics
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Extended Safe Operating Area
Unrivalled Gate Charge :Qg= 13nC (Typ.)
BVDSS=800V,ID=3A
RDS(on) : 5 Ω (Max) @VG=10V
100% Avalanche Tested
Absolute Maximum Ratings
Tc=25 unless other wise noted
Symbol Parameter
VDSS Drain-Sourse Voltage 800 V
ID
Drain Current -continuous (Tc=25) 3 A -continuous (Tc=100) 1.9 A
VGS Gate-Sourse Voltage ±30 V EAS Single Plused Avanche Energy (Note1) 320 mJ IAR Avalanche Current (Note2) 3 A PD
Power Dissipation (Tc=25) 107 W TJ,TSTG Operating and Storage Temperature Range -55 ~ +150
TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
300
Thermal Characteristics Symbol Parameter Typ. Max Units
RθJC Thermal Resistance,Junction to Case -- 1.17 /W
RθCS Thermal Resistance,Case to Sink 0.5 -- /W
RθJA Thermal Resistance,Junction to Ambient -- 62.5 /W
G SD
!!!!
!!!!
!!!!
!!!!
!!!!
!!!!
S
D
G
1 - 2012-7-8 -
2 -
HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25 unless other wise noted
Symbol Parameter Test Condition Min. Typ. Max Units
Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA,VGS=0 800 -- -- V
BVDSS/TJ
Breakdown Voltage Temperature Conficient
ID=250μA,Reference to 25
-- 0.9 -- V/
IDSS Zero Gate Voltage Drain Current Vds=800V, Vgs=0V -- -- 10 μA Vds=640V, Tc=125 100 μA
IGSSF Gate-body leakage Current, Forward
Vgs=+30V, Vds=0V -- -- 100 nA
IGSSR Gate-body leakage Current, Reverse
Vgs=-30V, Vds=0V -- -- -100 nA
On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 3 -- 5 V
RDS(on) Static Drain-Sourse On-Resistance
Id=1.5A,Vgs=10V -- -- 5 Ω
Dynamic Characteristics Ciss Input Capacitance
VDS=25V,VGS=0, f=1.0MHz
-- 530 690 pF Coss Output Capacitance -- 57 75 pF Crss Reverse Transfer Capacitance -- 7 9 pF
Switching Characteristics Td(on) Turn-On Delay Time
VDD=400V,ID=3A RG=25Ω (Note 3,4)
-- 15 40 nS Tr Turn-On Rise Time -- 40 90 nS
Td(off) Turn-Off Delay Time -- 30 70 nS Tf Turn-Off Fall Time -- 30 70 nS Qg Total Gate Charge
VDS=640,VGS=10V, ID=3A (Note 3,4)
-- 15 19 nC Qgs Gate-Sourse Charge -- 3.5 -- nC Qgd Gate-Drain Charge 7.7 -- nC
Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 3 A
ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 12 A
VSD Drain-Sourse Diode Forward Voltage
Id=3A -- -- 1.4 V
trr Reverse Recovery Time IS=3A,VGS =0V diF/dt=100A/μs (Note3)
-- 180 -- nS Qrr Reverse Recovery Charge -- 0.72 -- μC
*Notes 1, L=66.7mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
2012-7-8 -
3 -
HIGH VOLTAGE N-Channel MOSFET
Typical Characteristics
0 3 6 9 12 150
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
※ Note : ID = 3A
V GS, G
ate-
Sour
ce V
oltag
e [V]
QG, Total Gate Charge [nC]
0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
101
150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
25
I DR
, Rev
erse
Dra
in Cu
rrent
[A]
VSD, Source-Drain voltage [V]0 2 4 6 8
2
4
6
8
10
VGS = 20V
VGS = 10V
※ Note : TJ = 25
RDS
(ON)
[Ω],
Drain
-Sou
rce
On-R
esist
ance
ID, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 100 10110-2
10-1
100
101
VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V
※ Notes : 1. 250μ s Pulse Test 2. TC = 25
I D, D
rain
Curre
nt [A
]
VDS, Drain-Source Voltage [V]
4 6 8 1010-1
100
101
150oC
25oC-55oC
※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test
I D, D
rain
Curre
nt [A
]
VGS, Gate-Source Voltage [V]
10-1 100 1010
200
400
600
800Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
Crss
Coss
Ciss
Capa
citan
ce [p
F]
VDS, Drain-Source Voltage [V]
2012-7-8 -
4 -
HIGH VOLTAGE N-Channel MOSFET
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Areafor WGP3N80
Figure 10. Maximum Drain Currentvs Case Temperature
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250 μA
BVDS
S, (N
orma
lized
)Dr
ain-S
ource
Bre
akdo
wn V
oltag
e
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. VGS = 10 V 2. ID = 1.5 A
R DS(
ON), (
Norm
alize
d)Dr
ain-S
ource
On-
Resis
tance
TJ, Junction Temperature [oC]
100 101 102 10310-2
10-1
100
101
100 ms
DC
10 ms1 ms
100 µs
Operation in This Area is Limited by R DS(on)
※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Curre
nt [A
]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 1500
1
2
3
4
I D,
Dra
in Cu
rrent
[A]
TC, Case Temperature []
Figure 7. Breakdown Voltage Variationvs Temperature
Figure 8. On-Resistance Variationvs Temperature
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
※ N o tes : 1 . Z
θ JC( t) = 1 .1 7 /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z
θ JC ( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC(t
), T
he
rma
l Re
spo
nse
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for WGP3N80
t1
PDM
t2
2012-7-8 -
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HIGH VOLTAGE N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
Same Typeas DUT
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
VDSRL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
VDSRL
DUT
RG
VGS
EAS = L IAS2----
21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
DUT
RG
L
I D
t p
EAS = L IAS2----
21EAS = L IAS
2----21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
DUT
RG
LL
I DI D
t p
2012-7-8 -
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HIGH VOLTAGE N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------D =Gate Pulse WidthGate Pulse Period
--------------------------
2012-7-8 -
7 -
HIGH VOLTAGE N-Channel MOSFET
Package Dimension
4.50 ±0.209.90 ±0.20
1.52 ±0.10
0.80 ±0.102.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80
±0.
1015
.90
±0.2
0
10.0
8 ±0
.30
18.9
5MA
X.
(1.7
0)
(3.7
0)(3
.00)
(1.4
6)
(1.0
0)
(45°)
9.20
±0.
2013
.08
±0.2
0
1.30
±0.
10
1.30+0.10–0.05
0.50+0.10–0.05
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
TO-220
Dimensions in Millimeters
2012-7-8 -