RIE/ICP=30/1500 W RIE/ICP=50/1500 W
RIE/ICP=70/1500 W RIE/ICP=100/1500 W
Other parameters are fixed as:Temperature 15’C, Pressure=30mTorr, SF6=80sccm, Ar=10sccm, Time=10min
36.8 um in 10min 33.1 um in 10min
35.7 um in 10min37.4 um in 10min
RIE/ICP=70/1500 W for 24min RIE/ICP=100/1500 W for 26min
• In both of these cases, the Ni was not fully attacked even after enough long time to remove all the Si.
• The color difference comes from the microscope contrast adjustment, but not the etching itself.
sapphireTi/Pd/Ti
Ni
Si
NiSix
RIE/ICP
sapphire
Ni
Si
NiSix
NiTi/Ni/Ti
Ti/Ni/Ti/Ni = 30/350/30/50 nmOverlap = 870 nm