Transcript
Page 1: Room Temperature Continuous-wave Operation of   Two-dimensional Photonic Crystal Nanolasers

Room Temperature Continuous-wave Operation of Two-dimensional Photonic Crystal Nanolasers

Yu-Chen Liu 1,2 (劉育辰 ), Yi-Chun Yang 1(楊怡君 ), Zi-Chang Chang 2(張子倉 ), M. C. Wu 2(吳孟奇 ) and M. H. Shih 1,3 (施閔雄 ) 1Research Center for Applied Science (RCAS), Academia Sinica, Taiwan. 2Department of Electrical Engineering, National Tsing Hua University , Taiwan. 3Department of Photonics, National Chiao Tung University, Taiwan. Address: 128 Sec.2, Academia Rd., Nankang, Taipei 11529, Taiwan Phone : 03-5712121 ext.59470, Fax : 03-5745233, Email : [email protected]

Abstract : Photonic crystal nanolasers had been fabricated on a sapphire substrate. The room temperature continuous-wave (CW) lasing near 1550 nm had been achieved.

Motivation

Fabrication

PMMASiNx

InGaAsP

Sapphire

PMMASiNx

InGaAsP

Sapphire

SiNxInGaAsP

Sapphire

InGaAsP

Sapphire

E-beam lithography

ICPRIE

Summary We have demonstrated the D1 and point-shift sapphire-bonded photonic crystal nanolasers under CW operating conditions at room temperature. The CW nanolasers has ultrasmall size, excellent heat dissipation and low threshold. It is very useful for

D1 here means one hole was removed from the hexagon photonic crystal

D1 CW photonic crystal nanolaser on sapphire

Point-shift here means shifts of two lattice points to form the defect cavity, like ( a ).

Point-shift CW photonic crystal nanolaser on sapphire

The structure can only lase under pulsed condition.

Thermal conductivity

Air : 2.5×10-5 W/cm K‧

The structure can lase under CW condition.

Thermal conductivity

Sapphire : 5×10-1 W/cm K‧

In the fabrication, first the InGaAsP wafer are bonded with the sapphire wafer , the following process are showed in the following flow charts :

lattices to form a defect cavity.

This is the smallest photonic crystal cavity on the substrate so far.

mode volume

0.023μm3 ~1.5(λ/2n)3

500 nm

~580 nm

mode volume

0.014μm3 ~1.15(λ/2n)3

500 nm

200nm

300nm

a d

d

r

a = lattice constant

r = radius

d = shifts of lattice points

SEM image (Top view) SEM image (angle view) FDTD simulated mode profile

Lasing spectrum (CW) under room temperature

Light-in light-out curve (LL-curve)

Lasing wavelength vs lattice constant

SEM image (Top view) SEM image (angle view) FDTD simulated mode profile

Lasing spectrum (CW) under room temperature

Light-in light-out curve (LL-curve)

Lasing wavelength vs lattice constant

Nanocavity with about 580 nm in diameter

High side-mode suppression-ratio , which is over 20 dB

Low threshold 0.85 mW, but after estimating the material absorption, surface reflectivity of the cavity structure, the effective threshold power

Smallest CW laser on the substrate

Ultrasmall mode volume, only 0.014μm3

The effective threshold power is only 40 μW after estimating the material absorption, surface reflectivity of the

future dense integrated photonic circuits.

cavity structure

is only 35 μW

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