Soitec Products and ServicesSemiconductor Materials & Equipment - Solar Energy - Lighting
LED - Efficient Lighting
High-performance GaN substratesSupply lighting systems
Technologies
3,000 active patents
Smart Cut™ Smart Stacking™ Epitaxy Expertise Soitec CPV technology
High-Performance Semiconductor Materials
Solar - Clean Energy
CPV systems280 MWp / year manufacturing capacity
Green Electronics
Engineered substrates2 M wafers / year manufacturing capacity
Applications
Large IP Portfolio
The Company
Soitec is a world leader in designing and manufacturing high-performance semiconductor materials, using its unique expertise to serve the electronics, solar energy and lighting markets.
Since its creation in 1992, Soitec has continued to grow by cultivating innovation and focusing on developing differentiating technologies that add maximum value to end products.
As an industrial company, Soitec has built its reputation on developing and manufacturing its flagship material, SOI (silicon-on-insulator), which is based on the revolutionary Smart Cut™ “atomic scalpel” technology.
Green Electronics In the electronics market, Soitec’s engineered substrates and technologies toolbox enable the performance, energy efficiency and cost effectiveness to address the Internet of Everything challenges. Our substrates are used in growing markets such as mobile and consumer electronics, networking, data communications and automotive electronics.
Solar - Clean Energy In the solar market, Soitec is an industrial manufacturer of concentrator photovoltaic (CPV) systems with installations in more than 20 countries worldwide. Our innovative CPV systems are designed for utility-scale power plants as well as off-grid electrification in sunny regions. By exploiting the synergies between our proprietary semiconductor technologies and solar energy, we are committed to bringing solar cells with record efficiency into production.
LED - Efficient Lighting In the lighting market, Soitec is focused on delivering high-quality, high-performance, economically sensible light emitting diode (LED) lighting solutions for the commercial and industrial lighting markets. Leveraging our semiconductor expertise, we strive to offer high-efficiency LEDs based on breakthrough materials innovations.
350patents applications / year
~20% of staff working in R&D
Technology Innovation Rooted in our DNA
Market-changing innovation has always been the pathway to success at Soitec, beginning with our initial breakthrough – Smart Cut™ technology – and extending through Smart Stacking™, Soitec CPV technology and our full product portfolio.
Soitec has nearly 3,000 active patents and files 350 additional patent applications each year. In addition to patents for which we hold sole ownership, we also license technologies from our research and development partners.
Our research and development program focuses on four major goals: continuing to reduce the size of transistors and integrated circuits (More Moore), adding new functions to circuits (More than Moore), engineering III-V composite materials for the next generation of LED substrates, and developing high-efficiency solar cells and CPV systems for competitive electricity production.
Technology Roadmap
More Moore
Continuing transistor miniaturization
More than Moore
Integrating more RF functions into circuits
III-V materials engineering for lighting applications
Enable energy efficiency at competitive cost
High-efficiency solar cells for concentrator photovoltaic systems
Improve energy conversion rates
Double layer transfer
Single layer transfer
SOI-based substrate for CMOS process
Final bonding on new substrate: glass, sapphire,…
Buried Oxide
Base Material
Mono-Crystal Top Material
Buried Oxide
Base Silicon
Buried Oxide
Base MaterialBase Material
SOI, sSOI, GeOI or III.V-OI wafer
Si, sSi, Ge or III-V
GaN and other III-V engineered substrates
Smart Cell™Evolution of multi-junction devices
4 5 6 7 8 9 1 2
Energy (eV)
3 4 Current3 junctions
GaInP1.8 eVGaAs1.4 eV
Ge0.7 eV
GaInP1.8 eVGaAs1.4 eV
1.0 eV
0.7 eV
Soitec Smart Cell™
III-V Seed LayerIII-V
Substrate
Foreign Substrate
FD-SOI Transistor
FinFET Transistor
New Architecture Transistor
Soitec’s Five Core Technologies and the Expertise
Smart Cut™ Technology Silicon-On-Insulator Substrates
Soitec’s silicon-on-insulator (SOI) wafers cover the full range of applications for microelectronics markets. Our Smart Cut™ wafer-manufacturing technology gives us the flexibility to tailor SOI substrates to meet the most demanding specifications.
Epitaxy ExpertiseIII-V Materials GaAs epi GaN epi
For epitaxial GaAs structures, Soitec materials are tailored with atomic-layer precision to meet customer-specific design requirements. Soitec combines its expertise in III-V materials epitaxy with proven Smart Cut™ technology to prepare the next generation of engineered substrates that enables advanced device structures for lighting applications.
Altatech TechnologyEquipment Expertise Mature and advanced materials deposition Holistic defect inspection
7_Donor wafer becomes new wafer A SOI wafer
5_Splitting
6_Annealing andCMP touch polishing
1_Initial silicon
2_Oxidation
3_Implantation
4_Cleaning and bonding
GaAs substrate
GaAs buffer
InGaAs channel
AlGaAs spacer
AlGaAs:Si barrier
GaAs:Si cap
Transistor structure
Final product
Molecular Beam Epitaxy (MBE), under high vaccum, with substrate maintained at 600°C (for each step)
Soitec CPV TechnologySolar Energy Concentrator Photovoltaic
Soitec is a leading manufacturer and supplier of concentrator photovoltaic systems using highly efficient Soitec CPV technology. The company has a successful track record with CPV installations in more than 20 countries. We offer innovative CPV systems and outstanding services related to project development as well as operation and maintenance.
Soitec’s Five Core Technologies and the Expertise Smart Stacking™ TechnologyLayer-Transfer Solutions Processed wafer stacking Engineered and bonded substrates
Soitec leverages a unique portfolio of technologies — including our Smart Cut™ and Smart Stacking™ technologies — and expertise in low-temperature direct wafer bonding and mechanical-chemical thinning to offer a wide range of layer-transfer solutions that address each customer’s specific needs.
Initial processed wafer Initial bulk or processed wafer
2_Low-stress wafer bonding
3_Low-temperature thermal treatment (< 400°)
4_High-precision back thinning
5_High-quality final cleaning
Final waferafter Smart Stacking™
Optimized CPV module size
Soitec CPV systemmodule size
Fresnel lens concentrates the light ~ 500 times
High-efficiency multi-junction solar cell
Altatech develops highly efficient, cost-effective inspection and CVD technologies used for R&D and manufacturing of semiconductors, LEDs, MEMS and photovoltaic devices.
Altatech offers a unique portfolio of equipment for mature and advanced materials deposition and holistic defect inspection.
Soitec Product and Service Offerings
Soitec’s products and technologies dramatically improve energy efficiency, performance, miniaturization, reliability and the quality of daily life.
Typical Applications Typical MarketsSoitec
Products LinesSpecifications
SOI wafer diameters: 200 mm and /or 300 mm Benefits
Dig
ital
Digital CMOS: Planar Fully
Depleted (FD-SOI)
Soitec FD-2D
Ultra-thin silicon-on-insulator with:
•Top silicon: 10 nm to 30 nm
•Buried oxide layer: 10 nm to 145 nm
•Uniformity: ±5 Å min. – max. range (all points, all wafers)
•Very low power with remarkable performance
•Extremely cost-competitive to continue Moore’s Law at 28 nm and beyond for SOC
•Evolutionary path to fully depleted CMOS technology
Digital CMOS: FinFET
Soitec FD-3D
Silicon-on-insulator with:
•Top silicon: 20 nm to 100 nm
•Buried oxide layer: 50 nm standard
Fin height and isolation built into substrate:
•Faster and easier process development and manufacturing
•Optimized cost of ownership
•Excellent electrical behavior
Digital CMOS: Partially
Depleted SOI
Soitec Premium SOI™
Silicon-on-insulator with:
•Top silicon: 50 nm to 90 nm
•Buried oxide layer: 50 nm to 145 nm
•Super-high performance capability
•Improved switching speed to power consumption ratio
RF
RF on SOI
Soitec Wave SOI™
(eSI™ or HR-SOI)
Silicon-on-insulator with high-resistivity base wafer:
•Top silicon: 70 nm to 1 µm
•Buried oxide layer: 145 nm to 2 µm
•Base wafer resistivity > 1 kohm.cm and a Trap Rich layer in Soitec eSI™ product
•Substrate of choice for RF front-end module
•Best cost and performance trade-off
•Low RF loss, high RF isolation, linearity, power signal and digital integration
•Simpler design and process
RF on GaAsSoitec GaAs
Epitaxial Wafers
•pHEMT, high-mobility pHEMT, MESFET, HFET, mHEMT
•Expertise in GaAs on MBE technology
•75, 100 and 150 mm wafer diameters
•Pioneer in custom GaAs pHEMT epitaxy service
•Customer support from prototypes to high-volume manufacturing
RF on Sapphire
Soitec Bonded SOS
•Combining our core technologies to provide the best silicon layer quality on top of a sapphire substrate
•Ideal substrate for RF
•State-of-the-art RF performance
•High integration
Pow
er A
nalo
g
Power Analog on SOI
Soitec Smart Power SOI™
Silicon-on-insulator with:
•Top silicon: 0.2 µm to 1.5 µm
•Buried oxide layer: 145 nm to 3 µm
•Ultra-thick buried oxide option for high-voltage applications (>1000 V): buried oxide up to 10 µm
•Significant chip size reduction
•Much lower overall system costs
•Reduced standby current
•Very-high-temperature operation (up to 200 °C)
Imag
e Se
nsor
Image Sensor on SOI
Soitec Imager SOI™
Silicon-on-insulator with:
•Top silicon: 1.5 µm min.
•Buried oxide layer: 145 nm to 500 nm
•Faster learning and ramp-up
•Higher yields in volume production
•Lower total cost of ownership
Product also available: Stacking for Imager
MEM
S MEMS on SOI
Soitec MEMS SOI
Silicon-on-insulator with:
•Top silicon and buried oxide layer thickness adaptable to any customer application
•Excellent uniformity
•Intrinsic etch stop
Product also available: Stacking for MEMS
Smart Cut™ technology Smart Stacking™ technology
Epitaxy expertise Altatech technology
Soitec CPV technology
Sem
icon
duct
or M
ater
ials
WiFi
3G4G
WiFi
3G4G
Typical Applications Typical MarketsSoitec
Products LinesSpecifications
SOI wafer diameters: 200 mm and /or 300 mm Benefits
3D
3D Integration
Soitec Stacking for 3D
•Direct bonding based on dielectric or metallic layers
•Multiple stacking of processed layers
Products also available: Stacking for Imager and Stacking for MEMS
•Innovative solutions to improve performance, form factor and cost
•Customized solutions
Phot
onic
s
Photonics on SOI
Soitec Photonics SOI
Silicon-on-insulator with:
•Top silicon: 200 nm to 2000 nm
•Buried oxide layer: 1 µm to 3 µm
200 mm and 300 mm wafers diameters
•Thick buried oxide for optical confinement
•Excellent top-silicon crystal quality enabling low-loss waveguide
•Good thickness uniformity for high-yield manufacturing process
LED
Mat
eria
ls &
Sys
tem
s
LED
Soitec GaN Engineered Substrate
•High-quality GaN substrates tailored to LED requirements
•Substrate diameter: 100 mm
Product in development
•High device efficiency at high current injection
•Easily removable handle substrate for vertical devices
Indoor and outdoor lighting
Soitec Lamps & Luminaires
•High efficacy LED lighting system
•Long life
•Compatible with commonly available control systems
•Power savings > 50%
•Enhanced lighting experience by end user
•Low maintenance cost
•Overall short return on investment
Sem
icon
duct
or E
quip
men
t Mature and Advanced Materials
Deposition
Altatech NanoDeposition
•Wafer sizes: 100 mm to 300 mm
•Wide spectrum of deposited materials through a broad range of vaporization and deposition temperatures
•Excellent uniformity
•Low cost of ownership
•Adapted to customer requirements
Defect Inspection
and Metrology
Altatech NanoVision
•Front-end defect inspection:
•Unpatterned and patterned wafer inspection
•Macro and edge inspection
•Back-end defect inspection
•High-sensitivity inspection
•Modular system
•Low cost of ownership
•Adapted to customer requirements
Sola
r En
ergy
Utility-Scale or Off-Grid
Electrification in Sunny Regions
Soitec CX-S530-II
CPV System
•Highly efficient conversion of solar energy to electricity with >32% module efficiency
•Precise dual-axis tracker for optimal positioning toward the sun
•Large module area to reduce the number of CPV systems per power plant
•Only 12 Soitec CPV modules to be mounted per system
•High power output in peak times when electricity is most valuable
•Low cost of installation
•Low cost of operation and maintenance
Utility-Scale or Off-Grid
Electrification in Sunny Regions
Soitec CX-S540
CPV System
•Highly efficient conversion of solar energy to electricity with >32% module efficiency
•Precise dual-axis tracker for optimal positioning toward the sun
•Low height (max. 4.5 m /15 ft.) dual-axis tracker with 6 or 8 sub-units carrying 3 CPV Modules each
•High power output in peak times when electricity is most valuable
•Perfect landscape integration
•Less intrusive foundations
Utility-Scale or Off-Grid
Electrification in Sunny Regions
Soitec CX-M500 CPV Modules
•Fifth generation of Soitec CPV Modules
•Highly efficient conversion of solar energy to electricity with >32% module efficiency
•Delivered with brackets and air drying unit for easy CPV system integration
•High reliability and predictability of the power output
•Partnerships with local tracker manufacturers possible
Small and Medium-Scale
Off-grid Electrification
Soitec Plug&Sun™
and Plug&Sun+
•Complete energy solution
•High-efficiency CPV modules
•Dual-axis-tracking
•Autonomous / hybrid solution
•Low ground coverage
•Easy to deploy
Ligh
ting
Sem
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Equi
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Syst
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Specifications
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www.soitec.com
Worldwide Contacts
Soitec (headquarters)Parc Technologique des Fontaines 38190 Bernin (France)T. +33 (0)4 76 92 75 00 F. +33 (0)4 38 92 71 89www.soitec.com
Offices
Fabs
R&D
Global presence
Headquarters
Semiconductor [email protected]
Altatech [email protected]
Solar [email protected]