TSV CHIP STACKING MEETS PRODUCTIVITY
EUROPEAN 3D TSV SUMMIT 22-23.1.2013 GRENOBLE
HANNES KOSTNER
DIRECTOR R&D BESI AUSTRIA
OVERVIEW
• Flip Chip Packaging Evolution
• The ‘Simple’ World of C4
• New Flip Chip Demands
• TCB Requirements for TSV Chip Stacking
• TCB Bonder Development
• Architectural considerations
• Innovation & Implementation
• Status and Outlook
• TCB Productivity
• Evaluations
FLIP CHIP PACKAGING EVOLUTION THE ‘SIMPLE’ WORLD OF C4
FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS
ultra low-k wide I/O
low mechanical strength
MARKET DRIVERS
copper pillar & thin die
3D & fine pitch
integration density power consumption performance
Interconnect Technology
gradient bonding
Thermo Compression Bonding
Applications
2D TC
3D TSV 2.5 & 3D
Panel
Strip
Singulated
(Boat)
Wafer
Side by Side
Stacked
2.5D TSV
TC
NCF
TC
CUF
TC
MUF
Technologies
TC
NCP
Upstream
Dispensing
Fluxing
C2S
C2C
C2W
Multi Chip
Inert
In-Situ
Dispensing
TC
The world of TC
FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS
Through Silicon Via‘s
Thin Die handling
Cu-Pillars & Stacking
2µm@10mm Co-Planarity
Fine Pitch
± 2µm Placement Accuracy
Insitu Soldering & Productivity Demands
200°C/s Heating & 100°C/s Cooling
I/O-Density & NCF
Bondforce ≤ 250N
FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING
Cu-Pillars & CUF
Bond Control
Core Capability #1
Accuracy
Co-
Planarity
Core Capability #2
Bond
Control
Core Capability #3
TCB
TCB
3 TCB Core Capabilities
are essential for yield!
FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING
TCB BONDER DEVELOPMENT ARCHITECTURAL CONSIDERATIONS
Rigid & Heavy Elastic & Lightweight
Accuracy Accurate Axis
Appropriate Alignment system
Thermal Drift Compensation
Accurate Axis
Appropriate Alignment system
Thermal Drift Compensation
Co-Planarity Rigid System Mechatronic Co-planarity
Control
Bond Control z-Stiffness Active z-Position Control
Productivity Limited by z-Stiffness & Weight
Fast Temp. Ramping
Lightweight Construction
Fast Temp. Ramping
Flexibility per footprint Architectural Limits Comparable to C4 FC Bonder
Tilt due to elastic gantry deformation
Kinematic Restraint System
Mechatronics Solution
with
Coplanarity control
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – CO-PLANARITY CONTROL
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – 250N BONDHEAD
Heater
Tool
Chip
Heater
Tool
Chip
Cooling fluid (e.g. air)
Active Gas cooling
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION
Cooling ramp: -90°/sec
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION
0
50
100
150
200
250
300
350
400
450
0 5 10 15 20
Tem
pera
tur
[°c
]
Time [s]
Temp P2[°C]
Temp P3[°C]
Temp P4[°C]
Temp P5[°C]
0 1 2 3 4 5 t [s]
Typical TC P&P cycle (TC process time: 4s)
6 7
Phase 1:
• Bond
(TC process)
Phase 2:
• Move to rel. adjust
• Rel. Adjust
• Move to Pick
• Wait
Phase 3:
• Pick
• Move to ULC
Phase 4:
• ULC
• Move to Bond
tool temperature
221 °C
260 °C
T [°C]
180 °C 160 °C
1 2 3 4
160 °C
max cooling:
-50 °C/s
max ramping:
+100 °C/s
5.6
REL ULC MOVE MOVE MOVE MOVE WAIT Bond (TC process)
PIC
K
*) without inspections
WAIT interval
can be used
for inspection
STATUS AND OUTLOOK TCB PRODUCTIVITY - ACTUAL
Phase 1:
• Bond
(TC process)
Phase 2:
• Move to rel. adjust
• Rel. Adjust
• Move to Pick
Phase 3:
• Pick
• Move to ULC
Phase 4:
• ULC
• Move to Bond
*) without
inspections
0 0.5 1 1.5 2 2.5 t [s]
tool temperature
221 °C
260 °C
T [°C]
160 °C
1 2 3 4
160 °C
max cooling:
-100 °C/s
max
ramping:
+200 °C/s
REL ULC MOVE MOVE Bond (TC process)
PIC
K
MOVE MOVE
2.5 s cyle time / b. head
based on +200/-100 °C/s
ramping
1400 UPH / bond head
Upside UPH: 2800 sprint UPH for machine
STATUS AND OUTLOOK TCB PRODUCTIVITY – UPSIDE POTENTIAL
STATUS AND OUTLOOK EVALUATIONS
• 1st TC-Bonder Buyoff was very successful with first time dual head/single
pass assembly of Multi Layer TSV stacks @ 50µ die thickness
• 2nd Evaluation is ongoing
• In total we talk to 27 companies. All are decided to utilize TCB technology
sooner or later
12 OSATs
9 IDMs
2 Foundries
2 Fabless
2 Research Institutes
1 Material Supplier
SUMMARY