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Philips Semiconductors Product Specification Silicon Bi-directional Trigger Device BR100/03 LLD GENERAL DESCRIPTION QUICK REFERENCE DATA Silicon bidirectional trigger device in a SYMBOL PARAMETER MIN. MAX. UNIT glass envelope suitable for surface mounting. The device is intended for V (BO) Breakover voltage 28 36 V use in triac and thyristor trigger V O Output voltage 7 - V circuits. I FRM Repetitive peak forward current - 2 A OUTLINE - SOD80 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I FRM Repetitive peak forward t 10 μs, T tp 50˚C; f = 60 Hz - 2 A current P tot Total power dissipation T tp = 50˚C - 150 mW T stg Storage temperature -55 125 ˚C T j Operating junction - 100 ˚C temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-tp Thermal resistance junction to PCB mounted - 330 - K/W tie point CHARACTERISTICS T a = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BO) Breakover voltage I = I (BO) 28 32 36 V |V (BO)+ | - |V (BO)- | Breakover voltage symmetry I = I (BO) , see fig: 1 - - 3.5 V V O Output voltage R L = 20 ; Circuit of fig: 2 7 - - V I (BO) Breakover current V = V (BO) - - 50 μA dV (BO) /dT Temperature coefficient of - 0.1 - %/K V (BO) t r Risetime I p = 0.5 A; Circuit of fig: 2 - 1.5 μs February 1996 1 Rev 1.000

Br100 datasheet

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Page 1: Br100 datasheet

Philips Semiconductors Product Specification

Silicon Bi-directional Trigger Device BR100/03 LLD

GENERAL DESCRIPTION QUICK REFERENCE DATA

Silicon bidirectional trigger device in a SYMBOL PARAMETER MIN. MAX. UNITglass envelope suitable for surfacemounting. The device is intended for V(BO) Breakover voltage 28 36 Vuse in triac and thyristor trigger VO Output voltage 7 - Vcircuits. IFRM Repetitive peak forward current - 2 A

OUTLINE - SOD80 SYMBOL

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFRM Repetitive peak forward t ≤ 10 µs, Ttp ≤ 50˚C; f = 60 Hz - 2 Acurrent

Ptot Total power dissipation Ttp = 50˚C - 150 mWTstg Storage temperature -55 125 ˚CTj Operating junction - 100 ˚C

temperature

THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-tp Thermal resistance junction to PCB mounted - 330 - K/Wtie point

CHARACTERISTICSTa = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BO) Breakover voltage I = I(BO) 28 32 36 V|V(BO)+| - |V(BO)-| Breakover voltage symmetry I = I(BO), see fig: 1 - - 3.5 VVO Output voltage RL = 20 Ω; Circuit of fig: 2 7 - - VI(BO) Breakover current V = V(BO) - - 50 µAdV(BO)/dT Temperature coefficient of - 0.1 - %/K

V(BO)tr Risetime Ip = 0.5 A; Circuit of fig: 2 - 1.5 µs

February 1996 1 Rev 1.000

Page 2: Br100 datasheet

Philips Semiconductors Product Specification

Silicon Bi-directional Trigger Device BR100/03 LLD

Fig.1. Current-voltage characteristics Fig.2. Test circuit for output voltage and risetime.

MECHANICAL DATA

Dimensions in mm

Fig.3. SOD80

I

V V(BO)I

I(BO)I

I(BO)III

V(BO)III

230 V, RMS, 50Hz

100nF

10k

D.U.T.

500k

50R

VBO

IT

Adjust for Ip=0.5A

Vo

when measuring risetime

10RSet load resistance

measuring output voltageto 20 Ohms when

0.3 min

0 1.5 max1.3

0 1.5

3.33.7

February 1996 2 Rev 1.000

Page 3: Br100 datasheet

Philips Semiconductors Product Specification

Silicon Bi-directional Trigger Device BR100/03 LLD

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

February 1996 3 Rev 1.000

Page 4: Br100 datasheet

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