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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC517 Rev. A BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a = 25°C unless otherwise noted Thermal Characteristics T a = 25°C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 30 V V CBO Collector-Base Voltage 40 V V EBO Emitter-Base Voltage 10 V I C Collector Current - Continuous 1.2 A T J , T STG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Conditions Min. Max Units Off Characteristics V (BR)CEO Collector-Emitter Breakdown Voltage * I C = 2.0mA, I B = 0 30 V V (BR)CBO Collector-Base Breakdown Voltage I C = 10µA, I E = 0 40 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 100nA, I C = 0 10 V I CBO Collector Cut-off Current V CB = 30V, I E = 0 100 nA On Characteristics * h FE DC Current Gain V CE = 2.0V, I C = 20mA 30,000 V CE(sat) Collector-Emitter Saturation Voltage I C = 100mA, I B = 0.1mA 1 V V BE(on) Base-Emitter On Voltage I C = 10mA, V CE = 5.0V 1.4 V Symbol Parameter Value Units P D Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3 °C/W R θJA Thermal Resistance, Junction to Ambient 200 °C/W 1. Collector 2. Base 3. Emitter TO-92 1

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Page 1: Darlington bc517

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comBC517 Rev. A

BC

517 NPN

Darlington Transistor

January 2005

BC517NPN Darlington Transistor• This device is designed for applications requiring extremely high current gain at currents to 1.0A.

• Sourced from process 05.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.

NOTES:1. These ratings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta = 25°C unless otherwise noted

Thermal Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 V

VCBO Collector-Base Voltage 40 V

VEBO Emitter-Base Voltage 10 V

IC Collector Current - Continuous 1.2 A

TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C

Symbol Parameter Conditions Min. Max UnitsOff CharacteristicsV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 2.0mA, IB = 0 30 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100nA, IC = 0 10 V

ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA

On Characteristics *hFE DC Current Gain VCE = 2.0V, IC = 20mA 30,000

VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V

VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5.0V 1.4 V

Symbol Parameter Value UnitsPD Total Device Dissipation

Derate above 25°C6255.0

mWmW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 °C/W

1. Collector 2. Base 3. Emitter

TO-921

Page 2: Darlington bc517

2 www.fairchildsemi.comBC517 Rev. A

BC

517 NPN

Darlington Transistor

Mechanical Dimensions

0.46 ±0.10

1.27TYP

(R2.29)

3.86

MA

X

[1.27 ±0.20]

1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.4

7 ±0

.40

1.02

±0.

10

(0.2

5)4.

58 ±

0.20

4.58+0.25–0.15

0.38+0.10–0.05

0.38

+0.1

0–0

.05

TO-92

Dimensions in Millimeters

Page 3: Darlington bc517

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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FASTr™ FPS™

FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™

Rev. I15

ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™

POP™Power247™PowerEdge™PowerSaver™PowerTrench

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QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER

SMART START™

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TINYOPTO™TruTranslation™UHC™UltraFET

UniFET™VCX™

Across the board. Around the world.™The Power Franchise

Programmable Active Droop™

Page 4: Darlington bc517

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www.datasheetcatalog.com

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