Reconfigurable Double Gate CNTFETBased Nanoelectronic Architecture

Presented By: Under the guidance of:P.Sai Karthika B.Aruna M.tech138U1A0425 Asst.prof.deparment of ECE

CONTENTS

• INTRODUCTION• PRE EXSISTING FETS• CNTFET• NANOELECTRONIC ARCHITECTURE• RDG-CNTFET• ADVANTAGES• CHALLENGES• CONCLUSION

INTRODUCTION

• Carbon nanotube field effect transistors(CNTFET) have demonstrated extraordinary properties and are widely accepted as next generation VLSI circuits.

MOSFET

Recent obstacles to shrinking

System level modeling

FINFET

Advantages: 1.Good control. 2.Leakage current. 3.Sub Threshold swing.Disadvantages:

CNTFET

YOUNG’S MODULUS: Steel=200Gpa Si =135-180Gpa Diamond=1200Gpa CNT=1Tpa

NANOELECTRONIC ARCHITECTURE

RDG-CNTFET

A n-type MOSFET like reconfigurable double gate CNTFET

ADVANTAGES

• Less Area• Signal Reliability• Less power consumption• Good performance

CHALLENGES

• Synthesis method• Life time is less.

CONCLUSION

THERE WILL ALWAYS BE PLENTY OF ROOM AT THE BOTTOM

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