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Synthesis talk : relativistic pulsars winds from inside to far out Maxim Lyutikov (UBC)
Documents Synthesis talk : relativistic pulsars winds from inside to far out Maxim Lyutikov (UBC)

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VLSI Design CMOS Transistor Theory. EE 447 VLSI Design 3: CMOS Transistor Theory2 Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V
Documents VLSI Design CMOS Transistor Theory. EE 447 VLSI Design 3: CMOS Transistor Theory2 Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V

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S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Prof. Sherief Reda Division of Engineering, Brown University Spring 2007 [sources:
Documents S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Prof. Sherief Reda Division of Engineering, Brown University Spring 2007 [sources:

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Announcements First lab this afternoon SHL 016 –Introduction to EWB Tuesday: Matthew Bihler Gaurav Pandey Philip Zandona Trisha Wednesday: Joseph Brosch
Documents Announcements First lab this afternoon SHL 016 –Introduction to EWB Tuesday: Matthew Bihler Gaurav Pandey Philip Zandona Trisha Wednesday: Joseph Brosch

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Voltage Controlled Oscillators Yousef Shakhsheer 3/29/2011 1
Documents Voltage Controlled Oscillators Yousef Shakhsheer 3/29/2011 1

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9-1 Copyright © 2003 by John Wiley & Sons, Inc. Chapter 9 Resonant Converters Chapter 9 Zero-Voltage or Zero-Current Switchings converters for soft switching
Documents 9-1 Copyright © 2003 by John Wiley & Sons, Inc. Chapter 9 Resonant Converters Chapter 9 Zero-Voltage or Zero-Current Switchings converters for soft switching

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IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering
Documents IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering

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Chpt. 4d1 Bias-Point Location è Effect of load-line A è Effect of load-line B
Documents Chpt. 4d1 Bias-Point Location è Effect of load-line A è Effect of load-line B

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Chapter 6. Bipolar Junction Transistors (BJTs). Bipolar Junction Transistor Three terminal device Voltage between two terminals to control current flow
Documents Chapter 6. Bipolar Junction Transistors (BJTs). Bipolar Junction Transistor Three terminal device Voltage between two terminals to control current flow

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APPLICATION OF THE LAPLACE TRANSFORM TO CIRCUIT ANALYSIS LEARNING GOALS Laplace circuit solutions Showing the usefulness of the Laplace transform Circuit
Documents APPLICATION OF THE LAPLACE TRANSFORM TO CIRCUIT ANALYSIS LEARNING GOALS Laplace circuit solutions Showing the usefulness of the Laplace transform Circuit

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