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The top documents tagged [physical gate length]
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24 July 2002 Work In Progress – Not for Publication PIDS Key Issues for 2002 and 2003 ITRS ITRS Open Meeting July 24, 2002 San Francisco
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PIDS: Poster Session 2002 ITRS Changes and 2003 ITRS Key Issues ITRS Open Meeting Dec. 5, 2002 Tokyo
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ITRS December 2003, Hsin-Chu Taiwan How Much Variability Can Designers Tolerate? Andrew B. Kahng ITRS Design ITWG December 1, 2003
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4 December 2002, ITRS 2002 Update Conference The International Technology Roadmap for Semiconductors 2002 Update Summary Overall Roadmap Technology Characteristics
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1 Physical Design and FinFETs Rob Aitken ARM R&D San Jose, CA (with help from Greg Yeric, Brian Cline, Saurabh Sinha, Lucian Shifren, Imran Iqbal, Vikas
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Report Fin
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6.5.8 Equivalent circuit for the MOSFET. Capacitance The gate capacitance C i is the sum of the distributed capacitance from the gate to the source end
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Andrew Kahng – September 2001 Finding and Sharing Brick Walls CANDE September 22, 2001 Andrew B. Kahng, UCSD CSE & ECE Departments email:
[email protected]
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A. Kahng, 020619 ITRS-2001 Overview Andrew B. Kahng, UC San Diego CSE/ECE Depts. Chair, ITRS-2001 Design ITWG Caltech Beyond Silicon Summer School June
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P217/MAPLD2005Ahmadain 1 A Study of the Impact of Temperature on FPGA-based TMR Designs Amr Ahmadain Dept. of Electrical and Computer Engineering and Computer
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6.5.8 Equivalent circuit for the MOSFET
156 views