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IEEE NSS/MIC SensL Exhibitor Presentation New products, technology and applications of Silicon Photomultipliers Carl Jackson founder and CTO October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 1

SensL -- IEEE Presentation -- November 2011

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Page 1: SensL -- IEEE Presentation -- November 2011

IEEE NSS/MIC

SensL Exhibitor

Presentation

New products, technology and applications of Silicon

Photomultipliers

Carl Jackson – founder and CTO

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 1

Page 2: SensL -- IEEE Presentation -- November 2011

SensL’s Breakthrough

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 2

SensL Enables:

Performance

Uniformity

Large Area

Form Factor

Low CostPhotomultiplier

Vacuum Tube

SensL

Silicon Photomultiplier

SensL is the leading developer of Silicon Photomultiplier (SPM) technology

manufactured in standard CMOS foundries to replace the industry standard

Photomultiplier Tube (PMT)

Page 3: SensL -- IEEE Presentation -- November 2011

The SensL SL Silicon Photomultiplier (SPM)

2nd Generation Low Light Detector

IEEE NSS-MIC 2011 Valencia 3

SensL’s SL SPM optimizes; signal to noise, fill factor, PDE, low power, low voltage and uniformity while achieving critical OEM price targets

The SL SPM Array

x4774 microcells per 3mm SPM8 inch SPM Wafer

x2600 3mm SPM per wafer

microcell

October 23-29, 2011

Page 4: SensL -- IEEE Presentation -- November 2011

Introduction to SL

SiliconSPM with improved Signal to Noise, market leading

uniformity and low cost for high volume applications

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 4

Page 5: SensL -- IEEE Presentation -- November 2011

Goal of SL Silicon

• Process

• Architecture

Improve Signal to Noise

• Efficient use of available space

Optimise active area

• Enable high volume applications

Increase uniformity

• Provide the clear detector choice for OEM applications

Highest Performance / Cost Ratio

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 5

Page 6: SensL -- IEEE Presentation -- November 2011

SL Typical Performance (30035 SPM Pixel)

High PDE : 10-25%

Low Dark Current : 3µA

(2V>Vbr)

Low Temperature Dependence

: 21mV/ºC

High gain of 2.5E6 (2V>Vbr)

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 6

Page 7: SensL -- IEEE Presentation -- November 2011

SL Operating Voltage Uniformity

• x800 ArraySL-4 in dataset

• x12,800 SL Pixels

• Operating voltage varied

by <±1% across dataset

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 7

Page 8: SensL -- IEEE Presentation -- November 2011

SL Optical Uniformity Ratio (Max/Min)

• x800 ArraySL-4 in dataset

• x12,800 SL Pixels

• Single voltage applied to

each ArraySL-4

• Optical source correlated

to L(Y)SO pixel output

• Max and Min signal

recorded to calculate

optical uniformity

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 8

Page 9: SensL -- IEEE Presentation -- November 2011

Comparison of SL Pixel Uniformity to the Multi-

Anode PMT

*Multi-Anode PMT typical and maximum values are from manufacture datasheet

Maximum*

Typical*

• SensL SL SPM products

provide industry leading

optical uniformity ratios

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 9

Page 10: SensL -- IEEE Presentation -- November 2011

SL Breakdown Voltage Uniformity

Wafer Level Data

NOTE: A Full Body PET System is ~50k SL Pixels.

Data taken from a single wafer run of

un-binned SL Silicon Pixels

>66k pixels in dataset

Breakdown Voltage (Vbr) definition

Vbr = V(100nA)

Performance of all Pixels:

267mV Vbr variation

<1% Pixel to Pixel Vbr variation

across all wafers

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 10

Page 11: SensL -- IEEE Presentation -- November 2011

SL Optical Response Uniformity

Wafer Level Data

Data taken from a single wafer

run of un-binned SL Silicon Pixels

>66k SL Pixels in dataset

Identical voltage applied to all

pixels and optical current

measured

±10% Optical Uniformity

between all pixels

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 11

Page 12: SensL -- IEEE Presentation -- November 2011

SL Application

PerformanceSelect review of SL SPM operating in typical Hazard and

Threat and Medical Imaging applications

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 12

Page 13: SensL -- IEEE Presentation -- November 2011

SL Application Performance

Hazard and Threat Detection

ArraySL-4-30035-CERMicroSL-30035-X13

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 13

Detectors selected for review:

Page 14: SensL -- IEEE Presentation -- November 2011

SL Ideally Matched for CsI(Tl) Emission Profile

*CsI(Tl) emission spectrum from Saint-Gobain datasheet

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 14

Page 15: SensL -- IEEE Presentation -- November 2011

Hazard and Threat Detection

Radiation Detection (MicroSL-30035-X13)

3mm SL SPM can resolve to 14keV due to SL improved S/N ratio

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 15

Page 16: SensL -- IEEE Presentation -- November 2011

Hazard and Threat Detection

Radiation Detection (ArraySL-4-30035-CER)

Cs-137 spectra: 662keV (9.7% FWHM) and

32keV lines

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 16

• Output summed

• (x16 channels into x1

pre-amplifier)

• 30V SPM bias

• 20ºC Temperature

• 13.5x13.5x13.5mm3

CsI(Tl) crystal

• 2µsec shaper

• Ortec MCA

Page 17: SensL -- IEEE Presentation -- November 2011

Hazard and Threat Detection

Radiation Detection (ArraySL-4-30035-CER)

Am-241 spectra: 59.5keV (26.45% FWHM) and

17keV lines

• Output summed

• (x16 channels into x1

pre-amplifier)

• 30V SPM bias

• 20ºC Temperature

• 13.5x13.5x13.5mm3

CsI(Tl) crystal

• 2µsec shaper

• Ortec MCA

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 17

Page 18: SensL -- IEEE Presentation -- November 2011

Hazard and Threat Detection

Radiation Detection (ArraySL-4-30035-CER)

Co-60 spectra: 1.17, 1.33 Mev and

summation peak 2.5Mev are visible

Extracted energy to ADC value shows

linearity to 2.5MeV

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 18

Page 19: SensL -- IEEE Presentation -- November 2011

SL Application Performance

Medical Imaging

ArraySL-4-30035-CER ArraySL-4p9-30035

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 19

Detectors selected for review:

Page 20: SensL -- IEEE Presentation -- November 2011

L(Y)SO Readout with SL SPM

SensL Laboratory Results

Breakdown voltage = 27.5V

Recommended operation

voltage = 29.5V (Vbr+2V)

Typical reference measurement

3x3x15mm3 LYSO Pixel

Teflon wrapped

BC-630 grease coupled

Na22 source

Typical results

14% Energy Resolution at

511keV

500ps Timing (electronics

dependant)

Uniformity ±10%

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 20

Individual pixel readout

Page 21: SensL -- IEEE Presentation -- November 2011

High Density LYSO Crystal Block Readout

Chris Thompson

• Designed for 7T PET/MIR

• 1.67x1.67 LYSO crystals

• Dual crystal layers

• SensL products

• ArraySL-4-30035-CER

• ArraySL-4-PIXOUT

• ArraySL-4-EVB

PET

ring

* Images courtesy of Chris Thompson Poster M9-S46# 21October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 21

Page 22: SensL -- IEEE Presentation -- November 2011

PET/MRI

Molecular Imaging Program at Stanford

* Images courtesy of Peter Olcott and Craig Levin Poster (MIC 14-8)

1.5T RF OFF 1.5T RF ON

PET/MRI

• Readout through SPM modulated

VCSEL over fibre

• 2.14x2.14x20mm3 LYSO

• All components selected for magnetic

field compatibility

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 22

Page 23: SensL -- IEEE Presentation -- November 2011

PET - High Density Signal Multiplexing

West Virginia – Center for Advanced Imaging

SensL Array4p9

A 1.5mm LYSO Array flood map

DOI and MR compatibility

Multiplexing from 144:4 channels

144:4 channel readout by AiT

* Images courtesy of Stan Majewski (J2-3)October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 23

Page 24: SensL -- IEEE Presentation -- November 2011

High Resolution PET System

MD Anderson

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 24

0 5 10 15 20 25 300

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Depth of Interaction

R V

alu

e

DOI function - Column 8 Row 4

Collimated Source

Flood Calculation

Background Calculation

0 5 10 15 20 25 300

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Depth of Interaction

R V

alu

e

DOI function-Column 1 Row 5

Collimated Source

Flood Calculation

Background Calculation

0 5 10 15 20 25 300

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Depth of Interaction

R V

alu

e

DOI function-Column 5 Row 4

Collimated Source

Flood Calculation

Background Calculation

Custom ASIC readout

2mm pitch, 30mm length LYSO array

2ns timing

14% energy resolution

3-4 Depth of Interaction

* Images courtesy of Chad Birchner and Yiping Shao (MIC 7-3)

Page 25: SensL -- IEEE Presentation -- November 2011

Conclusion

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 25

SensL SL silicon is in mass production

SL silicon provides

– High signal to noise

– Superior optical response uniformity of <1.2 (max/min)

– Superior Vbr uniformity of <1%

– Low voltage operation of 30V

– Low cost

Proven performance in Hazard & Threat Detection and Nuclear

Medicine applications

Page 26: SensL -- IEEE Presentation -- November 2011

Thank YouTo discuss your application please visit our booth

28/29 during the show.

We are always available at www.sensl.com

October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 26