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IEEE NSS/MIC
SensL Exhibitor
Presentation
New products, technology and applications of Silicon
Photomultipliers
Carl Jackson – founder and CTO
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 1
SensL’s Breakthrough
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 2
SensL Enables:
Performance
Uniformity
Large Area
Form Factor
Low CostPhotomultiplier
Vacuum Tube
SensL
Silicon Photomultiplier
SensL is the leading developer of Silicon Photomultiplier (SPM) technology
manufactured in standard CMOS foundries to replace the industry standard
Photomultiplier Tube (PMT)
The SensL SL Silicon Photomultiplier (SPM)
2nd Generation Low Light Detector
IEEE NSS-MIC 2011 Valencia 3
SensL’s SL SPM optimizes; signal to noise, fill factor, PDE, low power, low voltage and uniformity while achieving critical OEM price targets
The SL SPM Array
x4774 microcells per 3mm SPM8 inch SPM Wafer
x2600 3mm SPM per wafer
microcell
October 23-29, 2011
Introduction to SL
SiliconSPM with improved Signal to Noise, market leading
uniformity and low cost for high volume applications
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 4
Goal of SL Silicon
• Process
• Architecture
Improve Signal to Noise
• Efficient use of available space
Optimise active area
• Enable high volume applications
Increase uniformity
• Provide the clear detector choice for OEM applications
Highest Performance / Cost Ratio
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 5
SL Typical Performance (30035 SPM Pixel)
High PDE : 10-25%
Low Dark Current : 3µA
(2V>Vbr)
Low Temperature Dependence
: 21mV/ºC
High gain of 2.5E6 (2V>Vbr)
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 6
SL Operating Voltage Uniformity
• x800 ArraySL-4 in dataset
• x12,800 SL Pixels
• Operating voltage varied
by <±1% across dataset
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 7
SL Optical Uniformity Ratio (Max/Min)
• x800 ArraySL-4 in dataset
• x12,800 SL Pixels
• Single voltage applied to
each ArraySL-4
• Optical source correlated
to L(Y)SO pixel output
• Max and Min signal
recorded to calculate
optical uniformity
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 8
Comparison of SL Pixel Uniformity to the Multi-
Anode PMT
*Multi-Anode PMT typical and maximum values are from manufacture datasheet
Maximum*
Typical*
• SensL SL SPM products
provide industry leading
optical uniformity ratios
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 9
SL Breakdown Voltage Uniformity
Wafer Level Data
NOTE: A Full Body PET System is ~50k SL Pixels.
Data taken from a single wafer run of
un-binned SL Silicon Pixels
>66k pixels in dataset
Breakdown Voltage (Vbr) definition
Vbr = V(100nA)
Performance of all Pixels:
267mV Vbr variation
<1% Pixel to Pixel Vbr variation
across all wafers
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 10
SL Optical Response Uniformity
Wafer Level Data
Data taken from a single wafer
run of un-binned SL Silicon Pixels
>66k SL Pixels in dataset
Identical voltage applied to all
pixels and optical current
measured
±10% Optical Uniformity
between all pixels
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 11
SL Application
PerformanceSelect review of SL SPM operating in typical Hazard and
Threat and Medical Imaging applications
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 12
SL Application Performance
Hazard and Threat Detection
ArraySL-4-30035-CERMicroSL-30035-X13
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 13
Detectors selected for review:
SL Ideally Matched for CsI(Tl) Emission Profile
*CsI(Tl) emission spectrum from Saint-Gobain datasheet
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 14
Hazard and Threat Detection
Radiation Detection (MicroSL-30035-X13)
3mm SL SPM can resolve to 14keV due to SL improved S/N ratio
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 15
Hazard and Threat Detection
Radiation Detection (ArraySL-4-30035-CER)
Cs-137 spectra: 662keV (9.7% FWHM) and
32keV lines
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 16
• Output summed
• (x16 channels into x1
pre-amplifier)
• 30V SPM bias
• 20ºC Temperature
• 13.5x13.5x13.5mm3
CsI(Tl) crystal
• 2µsec shaper
• Ortec MCA
Hazard and Threat Detection
Radiation Detection (ArraySL-4-30035-CER)
Am-241 spectra: 59.5keV (26.45% FWHM) and
17keV lines
• Output summed
• (x16 channels into x1
pre-amplifier)
• 30V SPM bias
• 20ºC Temperature
• 13.5x13.5x13.5mm3
CsI(Tl) crystal
• 2µsec shaper
• Ortec MCA
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 17
Hazard and Threat Detection
Radiation Detection (ArraySL-4-30035-CER)
Co-60 spectra: 1.17, 1.33 Mev and
summation peak 2.5Mev are visible
Extracted energy to ADC value shows
linearity to 2.5MeV
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 18
SL Application Performance
Medical Imaging
ArraySL-4-30035-CER ArraySL-4p9-30035
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 19
Detectors selected for review:
L(Y)SO Readout with SL SPM
SensL Laboratory Results
Breakdown voltage = 27.5V
Recommended operation
voltage = 29.5V (Vbr+2V)
Typical reference measurement
3x3x15mm3 LYSO Pixel
Teflon wrapped
BC-630 grease coupled
Na22 source
Typical results
14% Energy Resolution at
511keV
500ps Timing (electronics
dependant)
Uniformity ±10%
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 20
Individual pixel readout
High Density LYSO Crystal Block Readout
Chris Thompson
• Designed for 7T PET/MIR
• 1.67x1.67 LYSO crystals
• Dual crystal layers
• SensL products
• ArraySL-4-30035-CER
• ArraySL-4-PIXOUT
• ArraySL-4-EVB
PET
ring
* Images courtesy of Chris Thompson Poster M9-S46# 21October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 21
PET/MRI
Molecular Imaging Program at Stanford
* Images courtesy of Peter Olcott and Craig Levin Poster (MIC 14-8)
1.5T RF OFF 1.5T RF ON
PET/MRI
• Readout through SPM modulated
VCSEL over fibre
• 2.14x2.14x20mm3 LYSO
• All components selected for magnetic
field compatibility
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 22
PET - High Density Signal Multiplexing
West Virginia – Center for Advanced Imaging
SensL Array4p9
A 1.5mm LYSO Array flood map
DOI and MR compatibility
Multiplexing from 144:4 channels
144:4 channel readout by AiT
* Images courtesy of Stan Majewski (J2-3)October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 23
High Resolution PET System
MD Anderson
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 24
0 5 10 15 20 25 300
0.1
0.2
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0.5
0.6
0.7
0.8
0.9
1
Depth of Interaction
R V
alu
e
DOI function - Column 8 Row 4
Collimated Source
Flood Calculation
Background Calculation
0 5 10 15 20 25 300
0.1
0.2
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0.4
0.5
0.6
0.7
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0.9
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Depth of Interaction
R V
alu
e
DOI function-Column 1 Row 5
Collimated Source
Flood Calculation
Background Calculation
0 5 10 15 20 25 300
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Depth of Interaction
R V
alu
e
DOI function-Column 5 Row 4
Collimated Source
Flood Calculation
Background Calculation
Custom ASIC readout
2mm pitch, 30mm length LYSO array
2ns timing
14% energy resolution
3-4 Depth of Interaction
* Images courtesy of Chad Birchner and Yiping Shao (MIC 7-3)
Conclusion
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 25
SensL SL silicon is in mass production
SL silicon provides
– High signal to noise
– Superior optical response uniformity of <1.2 (max/min)
– Superior Vbr uniformity of <1%
– Low voltage operation of 30V
– Low cost
Proven performance in Hazard & Threat Detection and Nuclear
Medicine applications
Thank YouTo discuss your application please visit our booth
28/29 during the show.
We are always available at www.sensl.com
October 23-29, 2011 IEEE NSS-MIC 2011 Valencia 26