TRACK D: Advanced design regardless of process technology/ Marco Casale-Rossi

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Marco Casale-Rossi

Synopsys, Inc.

Advanced Design Implementation

Regardless of Process Technology

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Advanced Design, 1980The Mead & Conway Revolution

“As a result of improvements in

fabrication technology, Large Scale

Integrated (LSI) electronic has became

so dense that a single silicon LSI chip

may contain tens of thousands of

transistors. Many LSI chips, such as

microprocessors, now consist of

multiple, complex subsystems, and thus

are really integrated systems rather than

integrated circuits.

What we have seen so far is only the

beginning. […] It will eventually be

possible to fabricate chips with

hundreds of times as many components

as today’s.”

Source: C. Mead, L. Conway, Introduction to VLSI Systems, 1980

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Advanced Design, 2013We Can Design Chips with Tens of Thousands Times

More Transistors than in 1980,#

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Advanced Design, 2013We Can also Mix and Match

Logic + Analog & Mixed-Signal + RF + #

Source: Fabless, 2011 (180 & 65 Nanometers Mixed-Signal)

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Advanced Design, 2013 Emerging (“More of Moore”) vs.

Established (“More than Moore”) Technology Nodes

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0%

5%

10%

15%

20%

25%

30%

> 350 350 250 180 130 90 65/55 45/40 32/28 22/20 16/14 < 14

Worldwide

0%

5%

10%

15%

20%

25%

30%

> 350 350 250 180 130 90 65/55 45/40 32/28 22/20 16/14 < 14

Worldwide

0%

5%

10%

15%

20%

25%

30%

> 350 350 250 180 130 90 65/55 45/40 32/28 22/20 16/14 < 14

Worldwide

86%(20%)

34%

(66%)

Advanced Design, 2013Design Starts, Established vs. Emerging Technology Nodes

Source: IBS, Design Starts, 2012

(14%)

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Advanced Design, 2013A Different View: Installed Wafer Capacity Split

Emerging vs. Established Technology Nodes

Source: IC Insights, April 2013

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Advanced Design, 2013We See a Split#

• The Emerging Technology Nodes

– Non-planar CMOS at 22nm (Intel) & 14nm (foundries)

– Double patterning at 20nm, triple patterning ahead

– Complex, high volume chips: microprocessors, high-

end graphics, FPGA, wireless SoC

• The Established Technology Nodes

– A lot is done today in larger geometries

– 45/40nm and 28nm are expected to have long lives

– Key applications rely on them

– SoC can be complemented by 2.5D & 3D-IC, MEMS,

etc., enabling a longer technology lifespan

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Advanced Design, 201xExplore, Analyze, then Implement

RTL

Physical

Exploration

Stage

Implementation

Stage

Block

Feasibility

Block

Implementation

RTL

Exploration

RTL

Synthesis

Design

Exploration

Design

Planning

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Look-Ahead & Physical Guidance1 Mx, 2 My, and 2 Mz (Almost Only P&G)

> 80% Routing Utilization, > 10% Smaller Die

DC-T + ICC not Routable DC-G + ICC Routable

Source: IDM, 2013 (130 Nanometers Mixed Signal)

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Look-Ahead & Physical Guidance“Advanced Design Flow for LPDDR2 Non Volatile

Memory Design”

Source: Micron Technology, SNUG France 2012 (180 Nanometers PCM)

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Advanced Design, 201xAnalyze, Verify, Guide & Repair as You Implement

Implementation

Sign-Off

P&R STA,

DRC,C

RepairAnalyze,

Verify, Guide

RepairAnalyze,

Verify, Guide

RepairAnalyze,

Verify, Guide

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Timing ClosureSetup Violations Reduction Across Releases

Baseline 2010.03 = 0%, 130, 90 & 65 Nanometer Designs

Source: Synopsys Research, 2013

Designs with lesser number of violations (< 100) are not included in this chart

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Timing ClosureSetup Violations Reduction Across Releases

Baseline 2010.03 SPG = 0%, 130, 90 & 65 Nanometer Designs

Source: Synopsys Research, 2013

Designs with less number of violations (< 100) are not included in this chartDesigns with lesser number of violations (< 100) are not included in this chart

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Much More Than InteroperabilityIn-Design Rail Analysis Detected a Resistance Issue

(4Ω Instead of 1Ω) in the Analog Pre-Routing

Source: IDM, 2012 (90 Nanometers Mixed Signal)

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Much More Than InteroperabilityIn-Design Rail Analysis Detected a Voltage Drop and a

Ground Bounce Issue

Source: IDM, 2012 (65 Nanometers)

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Advanced Design, 201xA Great Deal of Low Power Techniques

Methodology Effectiveness

Multi-Voltage Islands 1.2 – 2.5X

Multi-Voltage Supplies 1.3 - 2X

Lower VDD Operation 1.3 - 5X ()

MTCMOS (Power Gating) 30 - 120X

VTCMOS (Biasing) 2 – 1.05X ()

Multi-VTH Optimization 2 - 5X

Clock Gating 1.3 - 2X

Clock Tree Synthesis 1.4 – 3.3X

Multi-Channel Optimization 2 – 5X

DVFS/AVS 1.4 – 2X

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Power Management12 Voltage Islands at 180 Nanometers

Advanced Implementation Technology Helps a Lot

Source: STMicroelectronics, SNUG France 2012 (180 Nanometers Mixed-Signal)

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Leakage Power ReductionThe Flow Advantage

Source: Synopsys Research, 2013

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Leakage Power ReductionThe Flow Advantage

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

baseline PT only FSLR+PT ICC+FSLR+PT DC+ICC+FSLR+PT

gsp_fp

mscore

DSS_28nm

Pwr % avg

-33%

Fair -42%

Good -50%

Better-59%

Best

Source: Synopsys Research, 2013

Block 1

Block 2

Block 3

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The Flow AdvantageMain Contributors to the 59% Leakage Reduction

Source: Synopsys Research, 2013

DC

28%(48%)

ICC + FSLR

26%(43%)

PT

5%(9%)

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The Flow AdvantageToday Design Implementation Technology

to the Rescue of Ten Year Old Process Technology

Block A Block G

Original Leakage (mW) 1X 1X

Original HS Cells (#) 100% 100%

Original LL Cells (#) 0% 0%

Final Leakage (mW) 0.375X 0.527X

Final HS Cells (#) 26.9% 40.3%

Final LL Cells (#) 73.1% 59.7%

Leakage Reduction (%) 62.5% 47.3%

Source: IDM, 2013 (130 Nanometers Mixed Signal)

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Advanced Design, 201xBesides Digital, Analog & Mixed Signal

Place & Route Custom Layout Round-Trip

Source: IDM, 2012 (180 Nanometers Mixed Signal)

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Much More Than InteroperabilityPlace & Route Custom Layout Round-Trip

Analog Routing in Custom Layout Environment

Source: IDM, 2012 (180 Nanometers Mixed Signal)

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Much More Than InteroperabilityPlace & Route Custom Layout Round-Trip

Digital Routing in Place & Route

Source: IDM, 2012 (180 Nanometers Mixed Signal)

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Much More Than InteroperabilityAnalog Pre-Routing & Shielding

Integrity Analysis & Resistance Calculation

Source: IDM, 2012 (90 Nanometers Mixed Signal)

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Advanced Design, 201xBeyond IC, Towards Heterogeneous Systems

Today... =Tomorrow

13 x 13 x 2mm

Source: iNEMO-M1, STMicroelectronics, 2012

Note: These Examples Are for Illustration Purposes Only

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Heterogeneous SystemsWill Enhance the Performance and Breadth of Solutions

Provided by IC Vendors

Courtesy of A. Fontanelli, Monozukuri, 2012

Package Substrate

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Leveraging Existing ToolsSilicon Interposer (Detail) Routed

Source: Synopsys Research, 2011

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A New RouterDie-to-Die (µBump to µBump) 45° RDL Routing

Not Only for 3D-IC#

Source: Synopsys Research, 2012

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Leveraging Existing ToolsMulti-Technology Simulation

X<instance_name> <interconnect> [<module_label>::]<subcircuit_name> <parameters>

.module <label>

.include <>

.lib <>

.model <>

.param <>

.option scale <>

.endmodule

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.module memorycube

.lib ‘CMOS28.lib’

.temp 85

.subckt memory1 N1 C

C

.ends

.endmodule

Multi-Technology SimulationNot Only for 3D-IC#

C

X1 N1 C memorycube::memory1

C

X2 N2 C logicdie::logic1

X3 N3 C analogdie::analog1

V1 C

.tran 1n 100n

.print v(*)

C

.module analogdie

.lib ‘CMOS130.lib’

.temp 40

.subckt analog1 N1 C

C

.ends

.endmodule

.module logicdie

.lib ‘CMOS20.lib’

.temp 125

.subckt logic1 N1 C

C

.ends

.endmodule

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Three Years AgoUse of Routing Resources Across Releases

Baseline = 2007.03, 130 & 90 Nanometer DesignsDesign A, 90 Nanometers

Release

Baseline = 6 layers Routability in 5 layers

# routing

Violations post ICC% change in area

%change in net

count

%change in wire

length

# routing

Violations post

ICC

% change in

area

%change in net

count

%change in

wire length

2007.03 4 100.0% 100.0% 100.0% 4582 100.0% 100.0% 100.0%

2007.12 0 99.0% 100.8% 99.0% 2769 98.8% 100.8% 98.9%

2008.09 0 98.4% 102.0% 94.3% 1947 98.1% 101.6% 93.0%

2009.06 0 97.0% 103.6% 89.8% 511 96.9% 103.5% 90.2%

2010.03 6 94.4% 100.3% 82.4% 23 94.1% 100.0% 81.8%

Design B, 90 Nanometers

Release

Baseline = 5 layers Routability in 4 layers

# routing

Violations post ICC% change in area

%change in net

count

%change in wire

length

# routing

Violations post

ICC

% change in

area

%change in net

count

%change in

wire length

2007.12 5 100.0% 100.0% 100.0% 237 100.0% 100.0% 100.0%

2008.09 3 95.1% 92.2% 97.8% 4 96.0% 92.3% 106.4%

2009.06 3 91.6% 88.7% 87.6% 11 91.5% 88.5% 86.5%

2010.03 7 91.7% 92.6% 88.4% 221 93.3% 91.6% 115.7%

Design 3, 130 Nanometers

Release

Baseline = 6 layers Routability in 5 layers

# routing

Violations post ICC% change in area

%change in net

count

%change in wire

length

# routing

Violations post

ICC

% change in

area

%change in net

count

%change in

wire length

2007.12 0 100.0% 100.0% 100.0% 65792 100.0% 100.0% 100.0%

2008.09 0 99.4% 105.9% 106.3% 75162 100.5% 108.1% 111.8%

2009.06 7 97.8% 103.4% 94.8% 71154 95.9% 102.4% 95.1%

2010.03 26 94.8% 94.4% 96.4% 35835 94.0% 93.8% 92.3%

Source: Synopsys Research, 2010

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TodayUse of Routing Resources Across Releases

Baseline = 2010.03, 130 & 65 Nanometer Designs

Design Name

Baseline =

Routing Violations

Using 8 layers

Routing Violations

Using 6 Layers

Routing Violations

Using 5 Layers

2010.03 2010.12 2011.09 2012.06 2013.03 2010.03 2010.12 2011.09 2012.06 2013.03 2010.03 2010.12 2011.09 2012.06 2013.03

Design 2 14 34 20 38 29 23 15 18 12 3 8460 6397 3508 4743 3301

Design 3 135 117 112 119 130 120 116 125 120 116 560 112 106 107 117

Design 8 2341 2038 2326 2223 2446 2692 2400 2587 2697 3099 3715 2911 3464 4202 3918

Design 9 2460 2400 2159 2617 2490 2626 2706 2443 2711 2596 5425 5760 6305 7598 6050

Design 10 25 12 28 15 15 43 40 12 28 17 27267 13274 809 15423 1534

Source: Synopsys Research, 2013

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Use Of Routing Resources3 Layers Instead of 4

Utilization from 60% to 67%, 81% Double Via Rate

Source: IDM, 2012 (130 Nanometers Mixed Signal)

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Use Of Routing Resources4 Layers Instead of 6

Utilization 77%, 80% Double Via Rate

DC-G + ICC Routable

Source: IDM, 2012 (130 Nanometers Mixed Signal)

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• Technologies look like “trailing edge” from a manu-

facturing process point-of-view

• Design, instead, is “bleeding edge” regardless of the

manufacturing process, and will even more THE

differentiator

• EDA is a critical ingredient of successful design

• The final result of combining “more than Moore” and

“more of Moore” can be surprisingly more advanced than

what is allowed by the simple progression of the

semiconductor roadmap through scaling

Conclusions

Source: C. Cognetti, STMicroelectronics, Napa KGD Packaging & Test 2004

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HIדהMay 2nd, 2013

Tel Aviv, Israel