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CATALOG 2010
355-0036 1414
1414 Shimonomoto, Higashimatsuyama, Sai tama 355-0036, JAPAN
TEL0493-24-6774 FAX0493-24-6715 www.mater ial-sys.com
Toshima Manufactur ing Co.,Ltd.
Contents 3P
4P
5P
6P
7P
8P
9P
10P
11P
12P
13P
14P
Mission
(1)
(2)
(3)
Magnetic Recording and Device Material
03
Ferroelectrics & Electrode Material
04
B-H Nested Butterfly Loops
Sputtering Target
Sputtering Target, PLD Target & Powder
P(L)ZT SBT KN/KT BiNaTiO BiFeO3
HfO2 HfSiO(N) HfO2-Al2O3 La2O3 La2O3-Al2O3
Pt Ir IrO2 SrRuO3 LaNiO3 TiN
DTR
AMF
+Bm
-Bm
+HmH-H
-HmBr
Br :
Hc :
Hc
a
b
c
d
e
f0
Volts
Nested Displacement Loops
60 40 20 20 40 60
Ang
stro
ms
30
25
20
15
10
5
0
-5
-10
-15
40u
30u
20u
10u
C etc.
CoCrPt-SiO2 etc.
Ru etc.
CoZrNb etc.
Nip etc.
Glass, Al
Pinning Layer
Substrate
Intermediate Layer
Soft Under Layer
Over Coat
Magnetic Layer
PMR
DTR
1.5
SBT
PZT
CCPSEM
CCP-
LaNiO3
FePt FePt-SiO2 FePtCu-C CCP
Ru
NiW
TiAlW
C
RuCo
CuCr
Cr
C-Co
Ru-SiO2
CuTi
Al2O3
CrN
Ru-TiO2
FeTa
SiO2
SiCx
Oxide Semiconductor & "TCO" Material
05
Optical & Optoelectronics Material
06
InGaZnO CuAlO2
Cu2O NiO
ZnO SnO
CuCrO2 ZnIr2O4
SrCu2O2
In2O3 ZnO TiO2 SnO2
LED
MgF2 Nb2Ox Al2O3 Ta2O5 TiO2 /SiO2
Ag Al
ITO TiO2:Nb GaN Ag ATO
CuSi GeSbTe
IGZO
100
90
80
70
60
50
40
30
20
10
0300 500 700 900 1100 1300 1500 1700
O2=2%
O2=4%
O2=8%
O2=2% : 86.8nm O2=4% : 111.4nm
O2=2% : 84.4nm
IGZO
Drain
IGZO(50nm)
High-k gate insulator
gate
Source
Mobility : 16.6cm2/Vs, Vth=0.9 V, on/off ratio = 107
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11-1 0 1 2 3 4 5
Gas flow ratio O2/(Ar+O2)(%)
Gate voltage VG-(V)
Dra
in c
urre
nt / D
(A
)
VD = 5V
120
100
80
60
40
20
00 1 2 3 4 5
Drain voltage VD (V)
VG :1-5Vstep1V
Dra
in c
urre
nt / D
(A
)
Nb2OxNb2Ox
DC Nb2O5 TiO2High-n
Nb12O29 Nb2O4.83 99.9% (wt%) Fe0.001Ni0.005Si0.005Ta0.0015 Ti0.0005W0.0005Zr0.0005 4.5(g/cm3)Nb2O54.47g/cm3 4.0(W/mK) 2.0(x10-6/K) 310-2(cm)
Ar/O2 n( k(Target
Size
70nm
85/15
PulseDC3KW
200
405nm 550nm 635nm1550nm405nm 550nm 635nm1550nm
2.57 2.35 2.305 2.221.29E-
03-1.97E-
02-1.38E-
022.54E-
12
Wavelength[nm]
3.5
3
2.5
2
1.5
1
0.5
0
0.25
0.2
0.15
0.1
0.05
0
-0.05300 350 400 450 500 550 600 650 700 750 800At 3.0kW, Ar/O2=85/15 sccm, 70 nm
Sputter RateF15/sec
n k
Power(W)
50
45
40
35
30
25
20
15
10
5
00 1000 2000 3000 4000
Dep
ositi
on R
ate
(/s
ec)
Ar/O2=100/0Ar/O2= 85/15Ar/O2= 90/10
Sputtering Target Sputtering Target
IGZO(1-1-1-4)IGZO(1-1-1-4)
95% DC10-2cm IGZO(2-2-1-7)
Battery & Energy
07
Superconductor
08
""
YBCO
CeO2 Gd2Zr2O7 Ce NiO YSZ
Ni MgO SrTiO3 Al2O3 Mg
GdBCO PrBCO BSCC
sq
O2
1.00E13
1.00E12
1.00E11
1.00E10
1.00E09
1.00E08
1.00E07
1.00E063 4 5 6 7 8
UVUV
O2=4%1200A O2=5%1100A O2=7%1300A
L i 2
LiCoO2 LiMn2O4 LiCo1/3Ni1/3Mn1/3O2 LiFePO4
Si Nb2Ox Li4Ti5O12 NbTiOx
Li3PO4 Li6BaLa2Ta2O12 Li7La3Zr2O12
CuGa CuGaIn CuZnSn CuInTe2
In2S3 ZnS ZnO-MgO ZnO
AZO BZO GZO TiO2:Nb
SiN TiO2 Nb2OxMgF2
BiTe BiSbTe MgSi MnSi CoSb
500mm
100um
mm
um
Ag
Y123RE123
YSZ CeO2 NiO
Ni Ag
XRDGd123
XRDGd2Zr2O72
12000
10000
8000
6000
4000
2000
00 10 20 30 40 50 60 70 80 90 100
2
4500
4000
3500
3000
2500
2000
1500
1000
500
00 10 20 30 40 50 60 70 80 90 100
Sputtering Target, Powder, Paste Sputtering Target, MOCVD Precursor, Powder, Paste
ZnOZnO
2x10-2cm 1.2x10-2cmZnO=5.6898%up 99.3%
O2=0 1200AO2=4%1200AO2=5%1100AO2=7%1300A
100
90
80
70
60
50
40
30
20
10
00 500 1000 1500 2000 2500 3000
MOCVD Precursor
09
MOD Coating Solution
10
BST BaTiO3 LiNbO3
SolutionsSolutions
PZT SBT BFO KN/KT Sr2Nb[Ta]2O7
IGZO ZnO
TiO2 LaNiO3
In2O3
RuO2
SnO2 NiO
LSM LSC PCMO LiLaZrO SrTiO3
PrecursorsPrecursors
SEM image of IGZO spincoated film
TG-DTA chart of IGZO coating solution
0.00
-20.00
-40.00
-60.00
-80.00
-100.00
4.00
2.00
0.00
0.0 200.0 400.0 600.0 800.0
TG(%)
DTA(uV/mg)
169.7-26.99mg-83.15%
323.5-31.65mg-97.50%
800.0-32.01mg-98.62%
360.2
115.0
TFT
2000rpm20sec150 5min 450 15min
140nm200nm5003h210E+2cm
Ta
n SiSi:H
Ta
SiIGZO
H
Li
Na
K
Rb
Cs
Fr
Be
Mg
Ca
Sr
Ba
Ra
Sc
Y
Ln
La
Ti V Cr
Zr Nb Mo
Hf Ta W
Ce Pr Nd
Mn Fe Co
Tc Ru Rh
Re Os Ir
Pm Sm Eu
Ni Cu Zn
Pd Ag Cd
Pt Au Hg
Gd Tb Dy
B C
Al Si
Ga Ge
In Sn
Tl Pb
Ho Er
N O F
P S Cl
As Se Br
Sb Te I
Bi Po At
Tm Yb Lu
He
Ne
Ar
Kr
Xe
Rn
Zn
S1mol/lA1-0.5mol/lB0.5-0.33mol/lC0.33-0.25mol/lD0.25-0.2mol/lE0.2-0.15mol/lF0.15-0.1mol/lG:0.1mol/l
Materials m.p.( )Solubility
Toluene Butyl Acetate THF
Zn(TMOD)2 48 S A S
Zn(DPM)2 141 A B A
Zn(IBPM)2 20 A A A
Zn(DIBM)2 80 S A S
Zn(acac)2 138 G G G
InArTG
0%
-20%
-40%
-60%
-80%
-100%0 100 200 300 400 500 600
TG
In(DPM)3 17.87mg
In(DIBM)3 23.33mg
In(IBPM)3 18.14mg
In(TMOD)3 14.55mg
In(acac)3 20.88mg
200
100
5040
30
20
10
2.3 2.4 2.5 2.6
160 140 120
1000/TK-1
CoTMOD3
CoDPM3
CoDIBM3
CoIBPM3
Co
g/cm
2 h
CVDCo
DPM:R=R,=C(CH3)3
DIBM:R=R,=CH(CH3)2
IBPM:R=C(CH3)3, R,=CH(CH3)2
TMOD:R=C(CH3)3, R,=C(CH3)2C2H5
--diketonato complexes
R R,
CC
M
C
O O
n
Analyzing
11
New Material Development & Coating By Commissioning
www.material-sys.com
7
6
5
4
3
2
1
00 50 100 150 200 250 300
Sample Temp.K
x=0.1
x=0.025
x=0.05x=0.15
Res
istiv
ity10
-4 O
hm-m
0
-50
-100
-150
-200
-2500 50 100 150 200 250 300
Sample Temp.K
Sr2-xYxTiO4
x=0.1
x=0.025
x=0.05
x=0.15
See
beck
Coe
f. u
V/K
20
15
10
15
00 50 100 150 200 250 300
Sample Temp.K
x=0.1
x=0.025
x=0.05
x=0.15The
rmal
Con
duct
ivity
W/K
-m
NG
GOOD
NDA
NIKKISO Microtrac MT3000
Rigaku TTR
X(XRD)
-
SII SPS3000
ICP-AES
KEYENCE VE-7800
SEM)
SHIMADZU EDX-720
X(XRF)
MAC Science 2000S
TG-DTA)
HITACHI U-1900
12
20(1945)515 9,900 164(200711) (1) (2) (3) (4) 1414 24,971.48m2 11,417.56m2
Company
20 5 2410 46 3 12 5711 5 4 9 6 9 10 5 11 4 MOCVD12 2 12 7 ISO90011312 9,4161412 MOCVD17 1 9,9001710 KES 218 9 2110
History
Facilities
-
4
1
5
2
6
3
13
20102P-P34P-P56P-P78P-P9MOCVDMOD10P-P1112P-P1314P-P15
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