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ZnTe
Optical characterizations of ZnTe epilayers grown on InP substrates Takeuchi Takashi and Satoru Seto
(Ishikawa National College of Technology) 1.
ZnTe
2.26eV
550nm
ZnTe GaAs
InP 300
GaAs ZnTe
InPZnTe
2. ZnTe 6.1037[]GaAs
5.6533[]InP 5.8687[]300
GaAsInPZnTeZnTe
ZnTe
ZnTe
X
ZnTe
ZnTe
3.
1InPZnTe
650nm
GaAs
InPZnTe
X -
2
ZnTe
GaAsInP
ZnTe
GaAs
ZnTe GaAs
8 InP
0.05688GaAs 0.03903 GaAs
Inte
nsi
ty (
a. u
.)
800750700650600550
W avelength (nm )
G ro w th p erio d : 8 hr
2 hr1 hr
30 m in
ZnTe o n InPT= 1 1 KH e-C d laser (3 2 5 nm ) excita tio n
PL
6.096
6.097
6.098
6.099
6.1
6.101
6.102
6.103
6.104
6.105
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
[h]
ZnTe[]
ZnTe
ZnTe
InP
Optical characterizations of ZnTe epilayers grown on InP substrates
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