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2SK2769-01MR N-channel MOS-FETFAP-IIS Series 900V 5,5W 3,5A 40W
> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated
> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V DS 900 VContinous Drain Current I D 3,5 APulsed Drain Current I D(puls) 14 AGate-Source-Voltage V GS 30 VRepetitive or Non-Repetitive (Tch 150C) I AR 3,5 AAvalanche Energy E AS 111 mJMax. Power Dissipation P D 40 WOperating and Storage Temperature Range T ch 150 C
T stg -55 ~ +150 C
- Electrical Characteristics (TC=25C), unless otherwise specifiedItem Symbol Test conditions Min. Typ. Max. UnitDrain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 900 VGate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 3,5 4,0 4,5 VZero Gate Voltage Drain Current I DSS VDS=900V Tch=25C 10 500 A
VGS=0V Tch=125C 0,2 1,0 mAGate Source Leakage Current I GSS VGS=30V VDS=0V 10 100 nADrain Source On-State Resistance R DS(on) ID=2A VGS=10V 4 5,5 WForward Transconductance g fs ID=2A VDS=25V 2 SInput Capacitance C iss VDS=25V 450 pFOutput Capacitance C oss VGS=0V 75 pFReverse Transfer Capacitance C rss f=1MHz 40 pFTurn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 20 ns
t r ID=7A 40 nsTurn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 50 ns
t f RGS=10 W 25 nsAvalanche Capability I AV L = 100H Tch=25C 3,5 ADiode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25C 1 VReverse Recovery Time t rr IF=IDR VGS=0V 500 nsReverse Recovery Charge Q rr -dIF/dt=100A/s Tch=25C 3 C
- Thermal CharacteristicsItem Symbol Test conditions Min. Typ. Max. UnitThermal Resistance R th(ch-a) channel to air 62,5 C/W
R th(ch-c) channel to case 3,125 C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET 2SK2769-01MR900V 5,5W 3,5A 40W FAP-IIS Series
> CharacteristicsTypical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics
ID=f(VDS); 80s pulse test; TC=25C
RDS(on) = f(Tch); ID=2A; VGS=10V
ID=f(VGS); 80s pulse test;VDS=25V; Tch=25C
I D [
A]
1
RD
S(O
N) [
W]
2
I D [
A]
3
VDS [V] Tch [C] VGS [V]
Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80s pulse test; TC=25C
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RD
S(O
N) [
W]
4
g fs [
S]
5
VG
S(t
h) [
V]
6
ID [A] ID [A] Tch [C]
Typical Capacitances vs. VDS Avalanche Energy Derating Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
Eas=f(starting Tch); VCC=90V; IAV=3,5A
IF=f(VSD); 80s pulse test; VGS=0V
C [
F] 7
Eas
[mJ] 8
I F [
A]
9
VDS [V] Starting Tch [C] VSD [V]
Allowable Power Dissipation vs. TC Safe Operation AreaPD=f(Tc) ID=f(VDS): D=0,01, Tc=25C
Zth
(ch-c
) [K
/W]
Transient Thermal impedance
10 12Zthch=f(t) parameter:D=t/T
PD [
W]
I D [
A]
Tc [C] VDS [V] t [s]
This specification is subject to change without notice!
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