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ESTREMO
• ERC (Europen Research Council) Starting Grant Research proposal
• Partecipanti1. ARCES (Advanced Research Center on Electronic Systems),
Facoltà di Ingegneria, Università di Bologna
2. CNR-IMM - Bologna
3. Texas Instruments, Inc., Dallas, Texas, USA
Enhancement of conductance in integrated power devices by means of strain effect and modulation techniques
ESTREMO
• Com’è nato il consorzio– collaborazione fra ARCES e T.I. USA già esistente sullo studio
di dispositivi per applicazioni Smart Power– limitazioni nella conduzione dei transistor DMOS
» “… velocity saturation effects in the drift region limit the device conductance, leading to a detrimental reduction of the maximum current drive at high voltages and to a premature current saturation…”
– Nel progetto si indagheranno due aspetti• strain engineering • conductance modulation
ESTREMO
• Comparison of the turn-on characteristic of the reference rugged LDMOS with that of a “strained” one. A 5-MPa tensile stress along the transport direction is applied under the STI region.
ESTREMO
• Coinvolgimento IMM– Misure di deformazione reticolare in silicio
• CBED• LACBED• NBD (Nano Beam Diffraction)
– Misure in strutture ‘grandi’• condizioni più rilassate per la misura• possibilità di ottenere geometrie ‘ad hoc’ da T.I.
– strain uniassiali– possibilità di sviluppo misure in campi di strain rapidamente
variabile
• È stata esplicitamente richiesta da ARCES la possibilità di inserire nel progetto una parte di sviluppo metodologico della misura di strain
ESTREMO
CBED LACBED NBD
ESTREMO – descrizione del lavoroWP Title WP Leader
WP1 New concepts for strain engineering and conductance modulation ARCES
WP2 Device characterization and strain measurements ARCES/IMM
WP3 Test pattern fabrication TI
ESTREMO – WP1
Task Title Months
T1.1 Acquisition of simulation tools for process-induced strain engineering. M1-M3
T1.2Investigation on locally strained devices with different crystal orientation and geometrical parameters. M4-M36
T1.3 Investigation on different conductance modulation approaches. M4-M36
T1.4 Development of new models for the reliability analysis in LDMOS. M4-M36
T1.5 Physical design of test structures and devices to be realized in test chip #1 M4-M8
T1.6 Physical design of best devices based on new concepts to be realized in test chip #2 M14-M18
T1.7 Physical design of best devices based on new concepts to be realized in test chip #3 M24-M28
ESTREMO – WP2-WP3Task Title Months
T2.1 Electrical characterization of devices fabricated in test chip #1. M12-M14
T2.2 Microstructure analysis of test modules #1 M12-M16
T2.3 Electrical characterization of devices fabricated in test chip #2. M22-M24
T2.4 Microstructure analysis of test modules #2 M22-M26
T2.5 Electrical characterization of devices fabricated in test chip #3. M32-M34
T2.6 Microstructure analysis of test modules #3 M32-M36
T2.7 Development of TEM/CBED measurements of non uniform strain fields. M13-M36
Task Title Months
T3.1 Technology setup and layout design of test chip #1. M4-M8
T3.2 Fabrication of test chip #1. M8-M12
T3.3 Technology setup and layout design of test chip #2. M14-M18
T3.4 Fabrication of test chip #2. M18-M22
T3.5 Technology setup and layout design of test chip #3. M24-M28
T3.6 Fabrication of test chip #3. M28-M32
ESTREMO – Gantt chart e m/mY 1 Y 2 Y 31 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
T1.1 T1.2T1.3T1.4
T1.5 T1.6 T1.7T2.1 T2.3 T2.5
T2.2 T2.4 T2.6T2.7
T3.1 T3.2 T3.3 T3.4 T3.5 T3.6
WP no. Y1 Y2 Y3 Total(P1)
Y1 Y2 Y3 Total(P2)
Y1 Y2 Y3 Total(P3)
Total(per WP)
ARCESIMM-CNR TI
WP1 35 36 36 107 0 0 0 0 0 0 0 0 107
WP2 4 6 6 16 6 21 21 48 0 0 0 0 64
WP3 0 0 0 0 0 0 0 0 2 2 2 6 6
Total 39 42 42 123 6 21 21 48 2 2 2 6 177
ESTREMO - costs
Cost Category
Year 1[1] Year 22 Year 32
Total (Y1-3)2
Total Costs of project:
(by year and total) 333780 325860 325860 985500
Cost category Year 1 Year 2 Year 3 Total
Research staff 23200 37100 37100 97400
Short-term staff 0 43700 43700 87400
Technical staff 4200 8500 8500 21200
Total personnel 27400 89300 89300 206000
Travel 5000 5000 5000 15000
Total other costs 5000 5000 5000 15000
Total direct costs 32400 94300 94300 221000
Indirect costs 6480 18860 18860 44200
Total costs 38880 113160 113160 265200
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