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July 2013 DocID024040 Rev 2 1/19
STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
Power MOSFET in H2PAK-2 and H
2PAK-6 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Ultra low on-resistance
• 100% avalanche tested
Applications• Switching applications
DescriptionThese devices utilize the 7
th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on)
in all
packages.
1
TAB
32
H PAK-22
H PAK-62
1
TAB
7
Order codes VDS RDS(on) max. ID
STH310N10F7-2
100 V 2.3 mΩ 180 A
STH310N10F7-6
Table 1. Device summary
Order codes Marking Package Packaging
STH310N10F7-2
310N10F7
H2PAK-2
Tape and reel
STH310N10F7-6 H2PAK-6
www.st.com
Contents STH310N10F7-2, STH310N10F7-6
2/19 DocID024040 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID024040 Rev 2 3/19
STH310N10F7-2, STH310N10F7-6 Electrical ratings
19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 100 V
VGS Gate-source voltage ± 20 V
ID
(1)
1. Current limited by package.
Drain current (continuous) at TC
= 25°C 180 A
ID
(1)Drain current (continuous) at T
C=100°C 120 A
IDM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 720 A
PTOT Total dissipation at T
C = 25°C 315 W
Derating factor 2.1 W/°C
EAS
(3)
3. Starting TJ=25°C, I
D=60 A, V
DD=50 V
Single pulse avalanche energy
(TJ = 25 °C, L=0.55 mH, I
as=65 A )
1 J
Tj
Tstg
Operating junction temperature
storage temperature
- 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.48 °C/W
Rthj-pcb
(1)
1. When mounted on 1 inch² FR-4 board, 2oz Cu
Thermal resistance junction-pcb max 35 °C/W
Electrical characteristics STH310N10F7-2, STH310N10F7-6
4/19 DocID024040 Rev 2
2 Electrical characteristics
(TCASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS
= 0)
ID
= 250 μA 100 V
IDSS
Zero gate voltage drain
current (VGS
= 0)
VDS
= 100 V 1 μA
VDS
= 100 V, TC
= 125°C 100 μA
IGSS
Gate body leakage current
(VDS
= 0)
VGS
= 20 V 100 nA
VGS(th) Gate threshold voltage V
DS= V
GS, I
D = 250 μA 2.5 3.5 4.5 V
RDS(on)
Static drain-source on-
resistance
VGS
= 10 V, ID
= 60 A 1.9 2.3 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS
= 25 V, f = 1 MHz,
VGS
= 0
- 12800 - pF
Coss Output capacitance - 3500 - pF
Crss
Reverse transfer
capacitance
- 170 - pF
Qg Total gate charge
VDD
= 50 V, ID
= 180 A,
VGS
= 10 V
(see Figure 14)
- 180 - nC
Qgs Gate-source charge - 78 - nC
Qgd Gate-drain charge - 34 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD
= 50 V, ID
= 90 A
RG
= 4.7 Ω VGS
= 10 V
(see Figure 13,
Figure 18)
- 62 - ns
tr Rise time - 108 - ns
td(off) Turn-off delay time - 148 - ns
tf Fall time - 40 - ns
DocID024040 Rev 2 5/19
STH310N10F7-2, STH310N10F7-6 Electrical characteristics
19
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 180 A
ISDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
(pulsed)
- 720 A
VSD
(2)
2. Pulse duration = 300μs, duty cycle 1.5%
Forward on voltage ISD
=60 A, VGS
=0 - 1.5 V
trr Reverse recovery time I
SD=180 A,
di/dt = 100 A/μs,
VDD
=80 V, Tj=150°C
(see Figure 15)
- 85 ns
Qrr Reverse recovery charge - 200 nC
IRRM Reverse recovery current - 4.7 A
Electrical characteristics STH310N10F7-2, STH310N10F7-6
6/19 DocID024040 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max R
DS(on)
100µs
1ms
10ms
Tj=175°CTc=25°C
Sinlgepulse
AM15430v1
10-5
10-4
10-3 10
-210
-1tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/τ
tp
τ
Single pulse
δ=0.5
280tok
5V
6V
7V
VGS=10VID
150
100
50
00 4 VDS(V)8
(A)
2 6
200
250
8V300
AM14734v1ID
150
100
50
00 4 VGS(V)8
(A)
2 6
200
250
VDS = 2V
300
350
1 3 5 7
AM14735v1
VGS
6
4
2
00 Qg(nC)
(V)
100
8
50
10VDD=50VID=180A
150
AM14736v1RDS(on)
2.15
2.10
2.05
20 80 ID(A)
(mΩ)
40 120
2.20
2.25 VGS=10V
160
AM15431v1
DocID024040 Rev 2 7/19
STH310N10F7-2, STH310N10F7-6 Electrical characteristics
19
Figure 8. Normalized BVDSS vs temperature Figure 9. Capacitance variations
Figure 10. Source-drain diode forward characteristics
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on-resistance vs temperature
0-25 7525-75 125
BVDSS
TJ(°C)
(norm)
0.94
0.96
0.98
1.00
1.02
1.04ID = 1mA
AM14742v1 C
6000
4000
2000
00 40 VDS(V)
(pF)
20
8000
60
Ciss
CossCrss
10000
14000
80 100
12000
AM14738v1
TJ=-50°C
TJ=150°C
TJ=25°C
VSD
0 40 ISD(A)
(V)
16080 1200.45
0.55
0.65
0.75
0.85
0.95
1.05
AM14739v1 VGS(th)
0.90
0.80
0.70
0.60TJ(°C)
(norm)
1.0
0-25 7525-75 125
ID = 250µA
AM14741v1
RDS(on)
1.6
1.2
0.8
0.40 TJ(°C)
(norm)
-25 7525-75 125
2.0ID = 60A
AM14740v1
Test circuits STH310N10F7-2, STH310N10F7-6
8/19 DocID024040 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID024040 Rev 2 9/19
STH310N10F7-2, STH310N10F7-6 Package mechanical data
19
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK®
is an ST trademark.
Package mechanical data STH310N10F7-2, STH310N10F7-6
10/19 DocID024040 Rev 2
Table 8. H²PAK-2 mechanical data
Dim.mm
Min. Typ. Max.
A 4.30
-
4.80
A1 0.03 0.20
C 1.17 1.37
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
H 10.00 10.40
H1 7.40 7.80
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.5 1.7
M 2.6 2.9
R 0.20 0.60
V 0° 8°
DocID024040 Rev 2 11/19
STH310N10F7-2, STH310N10F7-6 Package mechanical data
19
Figure 19. H²PAK-2 drawing
8159712_C8159712_C
Package mechanical data STH310N10F7-2, STH310N10F7-6
12/19 DocID024040 Rev 2
Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
DocID024040 Rev 2 13/19
STH310N10F7-2, STH310N10F7-6 Package mechanical data
19
Table 9. H²PAK-6 mechanical data
Dim.mm
Min. Typ. Max.
A 4.30
-
4.80
A1 0.03 0.20
C 1.17 1.37
e 2.34 2.74
e1 4.88 5.28
e2 7.42 7.82
E 0.45 0.60
F 0.50 0.70
H 10.00 10.40
H1 7.40 7.80
L 14.75 15.25
L1 1.27 1.40
L2 4.35 4.95
L3 6.85 7.25
L4 1.5 1.75
M 1.90 2.50
R 0.20 0.60
V 0° 8°
Package mechanical data STH310N10F7-2, STH310N10F7-6
14/19 DocID024040 Rev 2
Figure 21. H²PAK-6 drawing
8159693_Rev_E
DocID024040 Rev 2 15/19
STH310N10F7-2, STH310N10F7-6 Package mechanical data
19
Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)
footprint_Rev_E
Packaging mechanical data STH310N10F7-2, STH310N10F7-6
16/19 DocID024040 Rev 2
5 Packaging mechanical data
Table 10. Tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3
DocID024040 Rev 2 17/19
STH310N10F7-2, STH310N10F7-6 Packaging mechanical data
19
Figure 23. Tape
Figure 24. Reel
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top covertape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
Revision history STH310N10F7-2, STH310N10F7-6
18/19 DocID024040 Rev 2
6 Revision history
Table 11. Document revision history
Date Revision Changes
10-Dec-2012 1
Initial release. Part number(s) previously included in datasheet
ID 022287
23-Jul-2013 2
– Modified: IDSS
and VGS(th)
values on Table 4.
– Added: EAS
value in Table 2– Document status promoted from preliminary data to
production data
– Minor text changes
DocID024040 Rev 2 19/19
STH310N10F7-2, STH310N10F7-6
19
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