Poster

・The uniform deposition of Graphene oxide(GO) films was performed using a distilled water by Chemical Mist Deposition (CMD).

・Incorporation of GO in PEDOT:PSS/n-Si solar cell improves device performance.

・The uniform coating of conductive PEDOT:PSS was realized on the textured c-Si<100> wafer by CMD.

The European Materials Forum- Strasbourg, France

Chemical mist deposition of graphene oxide and PEDOT:PSS films for

crystalline Si thin-film solar cells

Fil

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Fil

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Time (min) Vm (V)

(a) (b)

Fil

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Fil

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Time (min) Vm (V)

(a) (b) (c)

mist

10mm

3mm

Schematic of the CMD apparatus GO deposition by CMD

Takashi Imamura1 , Ishwor Khatri1 ,Akira Uehara2, Ryo Ishikawa1, Keiji Ueno1, and Hajime Shirai1 1The Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676, Japan 2 Challenge Co.Ltd. 3124 Kamimizo, Sagamihara, Kanagawa 252-0243, Japan

AFM images of the GO on th-SiO2 with different solvent solutions

Changes of the film thickness of GO flake coated at different (a)

deposition times ,(b) Vms, and (c) distance D.

1.2nm1.2μ m

GO:1～２　Layer

1.2nm1.2μ m

GO:1～２　Layer

Mie scattering image

of the GO (0.1 wt%)

C-Si/GO/PEDOT:PSS heterojunction

solar cells

GO and PEDOT:PSS conjugated polymer

films on textured c-Si<100> wafer by CMD

Summary The c-Si/GO/PEDOT:PSS solar cells fabricated by CMD showed η of 9.27% with Jsc of 27.99 mA/cm2, Voc of 0.52 V and FF of 0.63.

The improved performance with insertion of GO in c-Si/PEDOT:PSS solar cells demonstrate effective hole transportation.

The CMD is attractive for the uniform coating of GO and PEDOT:PSS conjugated polymer films on hydrophobic c-Si<100> wafer.

solvent εr

Acetone 20.7

MeOH 32.6

Water 78.5

Hummers method

Oxidation

Ultrasonic Peeling

Time:3 min.

Vm:5 kV

D:10 mm

Vm:0 kV

D:10 mm Time:3 min.

D:10 mm Time:3 min.

Vm:5 kV

5 min. 10 min.

Red…2.4 MHz

Blue…Normal

Ultrasonic

The mean particle

size of ZrO

D

DC power

source

2.4 MHz Ultrasonic atomization device

Ag Ag

GO

PEDOT:PSS

Al

N type C-Si<100>

Vm:5 kV

D:4 mm

Jsc (mA/cm2)

Voc (V)

F.F Eff (%)

Pristine 27.85 0.51 0.60 8.76 3min. (GO) 27.99 0.52 0.63 9.27

Summary of typical

Photovoltaic parameters

Device structure