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Secondary IonMass Spectrometry
SIMS VII
Proceedings of the Seventh International Conference onSecondary Ion Mass Spectrometry (SIMS VII)
Hyatt Regency Hotel, Monterey, California, USASeptember 3rd-8th, 1989
EditorsA Benninghoven • C A Evans • K D McKeegan • H A Storms •H W Werner
Inv.-NJOHN WILEY & SONS
Fachbereich Materialwissenschaftder Techn. Hochschule Darmstadt
Chichester • New York • Brisbane • Toronto • Singapore
CONTENTS
FUNDAMENTALS
Don E. Harrison, Jr. a retrospective and prospective (invited) 3B. J. Garrison and N. Winograd
keV Particle bombardment of Si: a molecular dynamics simulation(invited) 9
R. Smith, D. E. Harrison, Jr., andB. J. Garrison
Sputtered ion formation (invited) 15P. Williams
Origin of secondary ions emitted from liquids 25P. J. Todd
Compositional transients in the sputtered neutral particle flux 29H. Gnaser and H. Oechsner
Surface bond —length determinations with shadow-cone enhanceddesorption 33
C. Chang and N. Winograd
The influence of megaevent collision sequences on secondary ionization.... 37G. P. Malafsky and N. Winograd
On the use of energy and angular resolved SIMS 41V. T. Cherepin
x Contents
SIMS study of iron carbide formation using negative molecular ions 45C. F. Klein, D. P. Leta, and R. Ayer
Hydrogen SIMS of titanium 49R. Bastasz
Group 13 metal oxide cluster ions, in AlxOy + , GaxOy
+ , and InxOy + 53
F. L. King and M. M. Ross
The ion induced angular distribution patterns of GaAs(llO) andAl/GaAs(110) 57
R. Blumenthal, K. P. Caffey, and N. Winograd
Singly- and doubly-charged secondary ions during bombardment oftitanium and iron alloys with argon and oxygen 61
J. M. Schroeer
Degradation of beam quality in SIMS instruments featuring primary ionretardation in secondary ion extraction fields 65
W. Szymczak and K. Wittmaack
Intensity distribution of singly and multiply charged atomic ions and clusterions sputtered from a clean silicon surface and its dependence upon primaryargon ion energy 69
C. Liangzhan, A. Adnot, and M. Baril
Energy, angular and mass resolved secondary ion emission from silicon 73V. T. Cherepin and A. A. Kosyachkov
SIMS-ISS study of amorphous alloys Fe-B 77S. P. Chenakin, V. T. Cherepin, I. Y. Panichkin,
I. A. Zotov, and K. Rohacek
Energy spectra of Si+ from SiC>2, theory and experiment 81<;- G. Ph. Romanova, A. A. Efremov, and P. I. Didenko
QUANTITATION
A comparison of positive ion relative sensitivity factors for Si andusing Ar + and O2 + ion bombardment 87
S. W. Novak and R. G. Wilson
Relative sensitivity factors for gallium primary ion beam 91H. Satoh, M. Owari, and Y. Nihei
Contents xi
High depth resolution SIMS by deconvolution of the instrumentalbroadening function 95
J. E. Turner, H. Keller, and D. E. Mars
SIMS profile synthesis using delta function dopant distributions 99J. B. Clegg and F. B. Beall
Predicting the best possible outcome of a SIMS depth profile 103D. S. McPhail, M. G. Dowsett, R. A. A. Kubiak,S. M. Newstead, S. Biswas, and S. D. Little-wood
Changes in relative secondary ion yields for dopants in GaAs due tosputter-induced topography changes 107
S. P. Smith
Are relative sensitivity factors transferable among SIMS instruments? I l lD. S. Simons, P. H. Chi, P. M. Kahora, G. E. Lux,
J. L. Moore, S. W. Novak, C. Schwartz,S. A. Schwarz, F. A. Stevie, and R. G. Wilson
Round-robin study of implants in Si and SiO2 by SIMS, RBS, and NAA .... 115P. Roitman, D. S. Simons, P. H. Chi, R. M. Lindstrom,
G. E. Lux, S. Baumann, S. W. Novak, R. G. Wilson,D. Farrington, J. Keenan, F. A. Stevie, J. L. Moore,
R. B. Irwin, A. J. Filo, C. W. Magee, R. Alcorn, and D. File
Ion yield data of impurities in GaAs obtained from round-robin study 119Y. Homma, S. Kurosawa, Y. Kubota, Y. Nakamura, K. Nomura,
M. Shibata, H. Shichi, J. Takahashi, Y. Yoshioka, and T. Ogawa
Reproducibility of the quantitive SIMS analysis of ion-implanted Siwafers 123
G. Lux
Factors that affect reproducibility in SIMS analysis of semiconductors 127P. H. Chi and D. S. Simons
Oxygen and cesium SIMS of rare earth and low electron affinity (<0.2 eV)elements implanted in semiconductors and their electron affinities estimatedfrom SIMS measurements 131
R. G. Wilson
SIMS and SNMS depth profiling of implanted silicon: matrix effects andquantitative analysis 135
R. Canteri, L. Moro, and M. Anderle
xii Contents
Dependence of secondary ion yield on irregularities on the sputtered surfaceof GaAs 139
A. Karen, K. Okuno, F. Soeda, and A. Ishitani
Secondary ion relative sensitivity factors of 49 elements in Si for Oj +
bombardment with negative ion detection and Cs + bombardment withpositive ion detection 143
P. M. Kahora and F. A. Stevie
SIMS depth profiling of ion implant standards in diamond 147S. P. Smith and R. G. Wilson
The role of RBS and nuclear reactions in the production of standards for SIMS 151H. Bakhru
Cs-SIMS quantitative analysis using secondary negative molecular ions forGaAs, InP and related compounds: matrix effects 155
Y. Gao
Relative sensitivity factors and estimated ionization potentials for molecularions in SIMS 159
F. A. Stevie and R. G. Wilson
SIMS quantification on Si(100), GaAs(lOO) and Cdo^Hgo.gTe using Ga andO2 primary beams 163
H. J. Strydom, A. P. Botha, C. A.Strydom, and J. S. Vermaak
COMPLEMENTARY TECHNIQUES
Postionization with electrons, plasma and beams (invited) 169R. Jede
Multiphoton resonant ionization (invited) 179W. H. Christie and J. D. Fassett
Laser microprobe post-ablation ionization (invited) 185R. W. Odom
Nonresonant photoionization of sputtered neutrals (invited) 189C. Becker
Radiocarbon dating with accelerators: methods and applications, includingthe Shroud of Turin (invited) 193
D. J. Donahue, A. J. T. Ml, and T. W. Linick
Contents xiii
Trace analysis of osmium and rhenium by resonance ionization massspectrometry of sputtered atoms 199
J. D. Blum, M. J. Pellin, W. F. Calaway, C. E. Young,D. M. Gruen, I. D. Hutcheon, and G. J. Wasserburg
TOF-SNMS by nonresonant laser-postionization 203G. Kampwerth, M. Terhorst, T. Heller, E. Niehuis, and A. Benninghoven
Surface analysis of bulk organic polymers by single-photon ionization 207J. B. Pallix, U. Schuhle, and C. H. Becker
Laser induced desorption of positive and negative ions of large proteins .... 211/. K. Perera, M. Salehpour, J. Kjellberg, A. Hedin,
P. Hakansson, and B. U. R. Sundqvist
Volatilization of large DNA molecules from a frozen aqueous matrix 215R. W. Nelson and P. Williams
Secondary ion emission from polymer materials under keV-ion and 252-Cf-fission fragment bombardment 219
H. Feld, R. Zurmuhlen, A. Leute, B. Hagenhoff, and A. Benninghoven
Applications of electron beam SNMS to the investigation of changes insputter yield 223
R. Wilson, J. A. van den Berg, and J. C. Vickerman
Detection limits for ambient gas species in sputter depth profiling withelectron gas SNMS 227
R. Jede, K. Seifert, and O. Ganschow
Depth profile measurements of PtxSii_x layers by combined SIMS, SNMS,AESandXPS 231
M. Altebockwinkel, W. Storm, L. Wiedmann, and A. Benninghoven
SIMS and neutron depth profiling studies of S^/SiaN^SiC^/Si structures. 235/. Banerjee, M. R. Frost, P. W. Davies, J. N. Cox, and R. G. Downing
Laterally uniform sputtering in direct bombardment SNMS 239B. J. Hall, H. E. Burriesci, and J. C. Huneke
Doubly-charged matrix argide cluster ions in GDMS spectra 243W. Vieth, J. C. Huneke, and N. McKinnon
Trace oxygen analysis by glow discharge mass spectrometry 247J. C. Huneke, W. Vieth, and N. McKinnon
xiv Contents
Characterization of thin dielectric films using SIMS, RBS, and LIMS 251C. C. Mariner, R. W. Odom, D. W. Martin,
F. R. di Brozolo, and A. J. Braundmeier, Jr.
Use of combined SIMS-XPS techniques for characterization of T^layers obtained by double thermic evaporation 255
M. Cahoreau, S. Michaux, andJ. Caisso
Primary beam damage at the bottom of SIMS craters in GaAs, InP, and Si:a TEM and AES study 259
R. Treichler, H. Cerva, W. Hosier, and R. v. Criegern
Sputter induced resonant ionization spectroscopy for trace analysis in silicon . 263R. Stuck and B. Sipp
Quantitative distribution analysis of oxygen in Czochralski-silicon bycombination of FTIR-spectroscopy, inert gas fusion analysis and secondaryion mass spectrometry 267
S. Gara, G. Stingeder, S. Pahlke, H. Schwenk,E. Guerrero, and M. Grasserbauer
SNMjs and RBS/NRA characterizations of doped oxides for micro-electronic applications 271
L. Moro, P. Lazzeri, G. Ottaviani, P. Serra, and M. Anderle
Glow discharge mass spectrometry with an RF powered atomization/ionization source 275
R. K. Marcus
Injection and detection schemes for accelerator-based SIMS 279S. P. Smith and R. S. Hockett
Reduction of matrix effects in secondary ion mass spectrometry byresonance ionization 283
S. W. Downey and R. S. Hozack
ORGANIC AND BIOLOGICAL ANALYSES
Matrix assisted UV laser desorption of biologically interesting molecules(invited) 289
B. T. Chait and R. C. Beavis
SIMS (Secondary-Ion Mass Spectrometry) in pharmaceutical research(invited) 293
A. Benninghoven, H. Musche, and C. Wunsche
Contents xv
Exact mass determination using TOF-SIMS (invited) 299E. Niehuis
Time-of-flight SIMS analysis of polymers and polymer surfaces(invited) 305
J. Lub and H. van der Wei
TOF-SIMS with a stigmatic ion microscope (invited) 311B. Schueler
SIMS: a method to evaluate the tissue absorbed dose in metabolic radio-therapy; preliminary results with mlBG 315
P. Telenczak, M. Ricard, S. Halpern, and P. Fragu
Deuterium and carbon 14 in biological tissues: detection sensitivity andquantitation by ion microscopy 319
E. Hindie, N. A. Thorne, F. Degreve, and P. Galle
The distribution of aluminum in the forebrain of chronic renal dialysispatients in relation to Alzheimer's disease using SIMS 323
J. M. Candy, A. E. Oakley, S. A. Mountfort, H. E. Bishop,G. A. Taylor, C. M. Morris, andJ. A. Edwardson
High spatial resolution SIMS imaging of labelled human chromosomes 327P. Halle got, C. Girod, M. M. Le Beau, and R. Levi-Setti
Immunocytochemical applications of ion microscopy with digital imaging... 331R. W. Linton, J. J. Lee, J. L. Hunter, and J. D. Shelburne
Origin of the CN~ secondary ions emitted from biological tissue under tenkeV Cs + bombardment 335
E. Hindie, G. Blaise, and P. Galle
Pathological changes in iodine distribution within human thyroid follicle .... 339P. Fragu, C. Briancon, S. Halpern, P. Telenczak,
J. C. Olivo, and E. Kahn
Optimal substrates for SIMS analysis of trace elements in biological tissue.. 343A. E. Oakley, S. A. Mountfort, J. M. Candy,
P. R. Chalker, H. E. Bishop, and J. A. Edwardson
Relative sensitivity factors for elemental microanalysis of cultured cells 347W. A. Ausserer, Y. C. Ling, S. Chandra, and G. H. Morrison
Ion microscopic imaging of intracellular storage and movement of calcium . 351S. Chandra, W. A. Ausserer, and G. H. Morrison
xvi Contents
SIMS depth profiling study of surface enrichment in blends of deuteratedand protonated polystyrene 355
S. A. Schwarz, R. A. L. Jones, E. J. Kramer,M. H. Rafailovich, and J. C. Sokolov
SIMS and copolymer ordering 359V. R. Deline, G. Coulon, T. P. Russell, and D. C. Miller
Depth profiles of mixtures of homopolymers with symmetric, diblockcopolymers 363
V. S. Wakharkar, V. R. Deline, and T. P. Russell
Comparison of TOF-SIMS with laser desorption FT-ICR for identificationof polymer additives 367
B. Asamoto, S. R. Bryan, C. L. Judy, R. W. Linton,B. Hagenhoff, M. Deimal, and A. Benninghoven
SIMS and FAB of biomolecules and pharmaceuticals, a comparison 371B. Hagenhoff, R. Kock, E. Niehuis, A. Benninghoven,
C. Wunsche, and H. Musche
GEOLOGICAL APPLICATIONS
SIMS measurement of oxygen isotope-ratios in meteorites and primitivesolar system matter 377
J. C. Lorin, G. Slodzian, R. Dennebouy, and M. Chaintreau
Isotope abundances of silicates produced in gas-condensation furnace 381C. Uyeda, J. Okano, and A. Tsuchiyama
Isotope ratio imaging of interplanetary dust particles 385R. H. Fleming, G. P. Meeker, F. R. di Brozolo, and D. F. Blake
Precious metal distribution in the Bacubirito iron meteorite by SIMS 389S. L. Chryssoulis and C. G. Weisener
Laboratory simulation of a quadrupolar SIMS analysis performed during aspace mission 393
R. Thomas, M. Bujor, J. C. Lorin, Y. Gao, and R. L. Inglebert
SIMS of polyoxymethylene and questions of cometary grain composition ... 397P. Mahaffy
Imaging SIMS study of "invisible gold" in sulfidic ore concentrates 401S. R. Bryan, J. D. Stephens, J. H. Gibson, and D. R. Rothbard
Contents xvii
Quantitative trace precious metal analysis of sulphide and sulpharsenideminerals by SIMS 405
S. L. Chryssoulis
Determination of optimum voltage offset in the ion microprobe for traceelement analysis of particles 409
J. Gavrilovic
Quantitative SIMS analysis of rare earth elements in mafic-ultramafic rocksamples 413
P. Bottazzi, L. Ottolini, and R. Vannucci
DEPTH PROFILING AND SEMICONDUCTOR APPLICATIONS
Micro-area SIMS depth profiling of dopants in silicon (invited) 419H. Zeininger and R. v. Criegem
Quantitative SIMS analysis of impurities in III-V compound semiconductors(invited) 425
Y. Homma
Depth profiling of buried dielectrics formed by high dose implantation(invited) .• 431
J. A. Kilner
Quantitative applications of SIMS in microelectronics (invited) 437R. G. Wilson, F. A. Stevie, and C. W. Magee
Quantitative study of background signals due to redeposition of sputteredions during on-chip analysis 443
M. Meuris, P. De Bisschop, and W. Vandervorst
Analysis of surface contamination on silicon- and GaAs-wafers by highmass resolution time-of-flight secondary ion mass spectrometry 447
U. Jilrgens, E. Niehuis, and A. Benninghoven
MOVPE regrowth on GalnAsP/InP laser structures for complex OEICs 451P. Harde, F. Fidorra, and H. Venghaus
SIMS quantitative analysis of impurities in hydrogenated amorphous siliconsolar cell 455
Y. Nagajuji, A. Mikami, K. Kuroki, S. Nakano, and Y. Kuwano
Quantitative measurement of the concentration of carbon in silicon bySIMS 459
M. Goldstein and J. Makovsky
xviii Contents
Negative SIMS with oxygen bombardment for the characterization of thinsilicon dioxide films 463
M. R. Frost, P. W. Davies, and I. Banerjee
Applications of AlxGai - xAs stoichiometry measurement by SIMS 4675. A. Schwarz, C. L. Schwartz, J. P. Harbison, and L. T. Florez
High resolution backside SIMS investigation of Ohmic contacts on GaAs ... 471Sj S. A. Schwarz, C. J. Palmstr<j>m, C. L. Schwartz, J. P. Harbison,
T. Sands, W. K. Chan, L. T. Florez, E. D. Marshall, and S. S. Lau
Secondary negative cluster ions for structure analysis-As2~ from Si andCoSi2 475
H. S. Luftman
Gallium beam SIMS depth profiling of dielectrics for the semiconductorindustry 479
/. G. Newman
SIMS investigations of novel high-speed III/V electronic devices 483R. T. Lareau, L. G. Yerk, and R. Khanna
Progress in the "load line calibration* method for quantitative deter-minations of [ O] in silicon by SIMS 487
J. Makovsky, M. Goldstein, and P. Chu
The practical use of polyencapsulation/SIMS for quantitative surfaceanalysis of silicon substrates 491
R. S. Hockett and J. C. Norberg
Evidence of a new beam-induced effect in depth profile analysis of thinfilms of amorphous silicon 495
J. Herion, W. Beyer, and H. Wagner
Electrical conductivity variations in III-V compound layers as determinedby SIMS - applications ?... 499
M. Gauneau, R. Chaplain, A. Rupert, and M. Salvi
A SIMS and LMMS study of Ti incorporation into metal organic chemicalvapor deposition grown InP 503
V. Swaminathan, H. S. Luftman, L. A. Heimbrook,A. G. Dentai, and C. H. Joyner
Study of possible matrix effects in the quantitative determination of oxygenin heavily-doped Czochralski silicon crystals 507
R. J. Bleiler, P. K. Chu, S. W. Novak, and R. G. Wilson
Contents xix
I. C. failure analysis using SIMS combined with electrical measurements ... 511R. Vlaeminck, J. Van Vooren, L. Stevens, and R. Gijbels
Improvement of detection limits of C, O and N in GaP by the backgroundsubtraction method 515
K. Okuno, A. Karen, S. Karen, F. Soeda, and A. Ishitani
Ion microscopy of fluorine-decorated silicon defects 519R. Brigham and R. S. Hockett
Depth profiling of channeled arsenic implants 523P. A. Ronsheim, W. Rausch, and R. F. Lever
SIMS analysis of contamination elements in the oxide layer on VLSI siliconwafer 527
N. Fujino, H. Horie, K. Hiramoto, Y. Tanizoe, S. Sumita,and T. Shiraiwa
Depth profiling of Si in AlGaAs/GaAs heterostructures with SIMS 531M. Maier
Application of SIMS to the evaluation of crystal quality and electricalbehavior of GaAs heteroepitaxy grown on silicon 535
J. J. Murray, S. Nozaki, T. George, A. T. Wu, and P. W. Davies
SIMS depth profiling of AlGaAs/GaAs self-aligned thin emitter hetero-junction bipolar transistor (SATE HBT) 539
L. C. Hopkins and R. J. Malik
Complete characterization of IH-V optoelectronic devices using cesiumbombardment SIMS ? 543
C. W. Magee
Checking the inhomogeneity of matrix element depth distribution in anInGaAsP-layer with SIMS 547
K. Miethe, E. Kuphal, and A. Pocker
Shallow range distributions of ' 'B + in CoSi2 551B. Mohadjeri and B. G. Svensson
SIMS characterisation of ZnS thin films for direct-current electro-luminescence 555
G.W. Blackmore and J'. M. Blackmore
SIMS imaging of laser induced selected area epitaxy of CdTe 559G. W. Blackmore, S. J. C. Irvine, H. Hill, and M. R. Houlton
xx Contents
SIMS study of the redistribution of ion-implanted aluminum in silicon 563O. Ishiwata, M. Watanabe, F. Kirihata, and M. Nagano
SIMS study of implanted Be out-diffusion in heteroepitaxial GaAs/AlGaAsduring annealing 567
B. Molnar and S. M. Hues
SIMS and photoluminenscence studies of rare earth implants in InP 571J. 5. Solomon, G. S. Pomrenke, R. L. Hengehold, and Y. K. Yeo
In-situ SIMS study of boron contamination of silicon oxide layers 575J. L. Glasper, D. J. Robbins, I. M. Young, and P. J. Sutcliffe
SIMS analysis of ion implantation profiles of BF2 in photoresist 579F. A. Stevie, R. D. Huttemann, W. R. Knolle, andJ. L. Moore
Gaseous impurity rapid aggregations at lattice imperfections in silicon fromambient 583
T. ho and T. Abe
Energy dependence of the in-depth resolution for matrix ions inSi16O2/Si18O2 system 587
G. Prudon, J. C. Dupuy, P. Pinard, and S. Rigo Cy
Quantification of surface contamination on silicon wafers using poly-encapsulation SIMS 591
S. Biswas, R. Falster, I. E. Kelly, and S. D. Littlewood
The segregation of impurities in buried oxide layers 595S. Biswas, J. A. Kilner, K. J. Reeson, and S. Biswas
SIMS depth profiling through multilayer semiconductor materials 599T. Tanigaki, Y. Kato, and T. Suzuki
Secondary ion mass spectrometry analysis of dopant diffusion out of cobaltsilicide ' 603
S. E. Shore, D. D. Sieloff, R. O. Frenette, T. D. Sullivan, and P. Geiss
SIMS for accurate process monitoring in CoSi2-on-Si MOSFET technology 607H. E. Smith and J. L. Beagle
Depth profiling of metals, alkalis and chlorine in SiO2/Si structures with aCAMECAIMS4F 611
P. Maillot and A. E. Morgan
Contents xxi
The redistribution of arsenic and germanium in the altered layer formedduring SIMS analysis of silicon 615
M. G. Dowsett, C. Jeynes, E. A. Clark, R. Webb, and S. M. Newstead
Field induced impurity migration during SIMS depth profiling 619C. J. Vriezema, K. T. F. Janssen, G. M. Fontijn, and P. C. Zalm
On the mass and energy dependence of depth resolution 623M. Meuris, P. De Bisschop, W. Vandervorst,
J. A. Jackman, and T. E. Jackman
High precision depth profiling of implanted semiconductors 627E. A. Clark, M. G. Dowsett, H. S. Fox, and S. M. Newstead
Quasi-static SIMS on bevelled semiconductor heterostructures 631G. Horcher, A. Forchel, S. Bayer, H. Nickel, W. Schlapp, and R. Losch
SIMS depth profiling of implanted silicide/silicon layers 635R. Canteri, R. Angelucci, and M. Anderle
Image processing method for calibration of ion beam scanning to optimizesputter crater in SIMS 639
G. Bilger and J. E. Fischer
Temperature dependent Gibbsian segregation of Cu in Si during SIMSdepth profiling 643
5. F. Corcoran, S. K. Hofmeister, D. P. Griffis, and R. W. Linton
Some new characterization results of Si3N4 films on GaAs for ICtechnology 647
C. Grattepain and A. M. Huber
High resolution, high sensitivity SIMS dopant mapping in semiconductordevices 651
G. D. T. Spiller, P. J. Skevington, D. M. Rohlfing, and M. J. Robertson
Self charge compensation during depth profiling of electromigrating ^impurities in insulating films , 655
S. Nagayama, S. Makinouchi, A. Takano, M. Tezuka,K. Takahashi, and M. Kudo
SIMS depth profile analysis of BPSG and silicon nitride without chargecompensation using the SI-SIMS technique 659
G. R. Mount
xxii Contents
Interface studies of InGaAs/InP multiple quantum well structures usingelectron gas SNMS 663
U. Breuer and H. Kurz
Two dimensional analysis of semiconductors at dopant sensitivity usingSIMS 667
G. Cooke, M. G. Dowsett, C. Hill, E. A. Clark,P. Pearson, /. Snowden, and B. Lewis
Effect of primary ion beam focus on crater shape and depth resolution inSIMS 671
S. J. Pachuta and J. A. Pecore
The few fjxn area analysis under alternating O2"1" and C s + ion beambombardment 675
T. Hoshi
Ion beam mixing and sample effects on SIMS and SNMS depth resolutionof SiCySi and compound semiconductor interfaces 679
S. W. MacLaren, J. E. Baker, L. J. Guido, N. Holonyak, Jr.,M. Anderle, and C. M. Loxton
Charge-compensated Cs SIMS applied to semiconductor/dielectric hetero-structures h 683
R. G. Wilson and C. J. Hitzman
SIMSofH:LiNbO3 687R. G. Wilson, S. W. Novak, J. M. Zavada, A. Loni, and R. M. De La Rue
HIGH TEMPERATURE SUPERCONDUCTOR APPLICATIONS
High resolution SIMS imaging of multilayer-deposited high Tc thin films... 693R. Levi-Setti, J. M. Chabala, R. P. H. Chang, D. L. Hansley,
J. B. Ketterson, D. Q. Li, Y. L. Wang, and X. K. Wang
SIMS analysis of oxygen and carbon in YBa2Cu3O7_x superconductors 697G. Gillen, P. Chi, and D. S. Simons
SIMS-ISS study of the high-Tc superconductor 701S. P. Chenakin, V. T. Cherepin, I. Yu. Panichkin, and I. A. Zotov
Quantitative SIMS of superconducting oxide systems 705E. U. Engstrbm, A. R. E. Lodding, and O. Odawara
Contents xxiii
METALLURGICAL APPLICATIONS
Metallurgical applications of SIMS analysis on steels 711D. Loison
Detection of grain-boundary segregation in steels by SIMS 715J. A. Jackman, M. T. Shehata, J. T. Bowker, L. E. Collins,
and T. F. Malis
Oxygen diffusion during the oxidation of Ni3Al alloys 719A. M. Venezia, J. E. Baker, and C. M. Loxton
Deuterium in-depth analyses.of oxidized Zr-2.5% Nb pressure tube samplesremoved from an operating nuclear reactor 723
A. M. Brennenstuhl, B. D. Warr, N. S. Mclntyre, C. G. Weisener,and R. D. Davidson
Analysis of nitrogen-pulsed sputtered beryllium 727C. W. Price and J. C. Norberg
Studies on the niobium-deuterium system using SIMS 731H. Zuchner and T. Bruning
Studies on the vanadium-deuterium system using SIMS 735H. Zuchner and P. Kock
SIMS study of corrosion of Co-Cr sputtered thin films 739Y. Hayashi, T. Nagata and H. Hagi
Application of SIMS to the quantitative analysis of TiB, TiC wearprotecting coatings 743
G. Brault, G. Farges, G. Rautureau, M. Spirckel, andJ. C. Pivin
SIMS analysis of carbon reinforced aluminum composites 747L. Dignard-Bailey and J. A. Jackman
SIMS studies of model silver halide emulsion microcrystals of practical size 751J. M. Chabala, C. J. Falder, R. Levi-Setti, and T. J. Maternaghan ,
STATIC SIMS AND THE ANALYSIS OF POLYMERS
Secondary ion formation from polymer materials: a systematic investigation 757D. van Leyen, M. Deimel, B. Hagenhoff, and A. Benninghoven
xxiv Contents
Quantitation of organic molecular ions in static secondary ion massspectrometry: can it be done? 761
P. A. Cornelio, M. B. Clark, Jr., andJ. A. Gardella, Jr.
TOF-SIMS of model polyether polyurethanes 765/. V. Bletsos, D. M. Hercules, J. N. Rieck, C. G. Karakatsanis,
D. van Leyen, and A. Benninghoven
Static SIMS characterization of a styrene/p-hydroxystyrene copolymerseries 769
A. Chilkoti, D. G. Castner, and B. D. Ratner, and D. Briggs
Surface characterization of polycarbonate/polybutylene terephthalate blendsby static secondary ion mass spectrometry 773
R. S. Michael, W. Katz, J. Newman, and J. Moulder
Static SIMS analysis of polymer surfaces with a double focusing massspectrometer 777
S. Seki, Y. Ikebe, H. Iwamoto, and H. Tamura
Static SIMS investigations of organic-metallic surface reactions 781B. Wenclawiak and T. J. Prater
Absolute coverage measurements of silicon hydrides on Si surfaces usingstatic SIMS 785
S. M. Gates and C. M. Greenlief
SSIMS studies on 18O2 plasma treated polypropylene 789E. Occhiello, M. Morra, F. Garbassi, P. Humphrey, and J. C. Vickerman
Surface characterisation of oxides by static SIMS 793N. M. Reed and J. C. Vickerman
Static secondary ion mass spectrometry and contact angle measurements onderivatized glass surfaces 797
G. Barth, R. Linder, and L. Barnard
Application of neutral-beam SIMS to the study of polycation adsorption onkaolin 801
B. L. Bentz, J. K Lampert, and L. J. Morgan
What are the limits of detection for molecules on surfaces using ion beaminduced desorption? 805
,D. M. Hrubowchak, M. H. Ervin, and N. Winograd
Contents xxv
Charge compensation of insulators in SSIMS analysis 809N. M. Reed, P. Humphrey, and J. C. Vickerman
INSTRUMENTATION
SIMS at high sensitivity and high mass resolution (invited) 815S. W. J. Clement and W. Compston
Liquid metal ion microprobe studies using parallel ion detection (invited)... 821Y. Nihei, H. Satoh, and M. Owari
Extreme energy filtering for the elimination of cluster interferences in SIMS 827S. N. Schauer and P. Williams
The IMS 1270 - a new high transmission SIMS 831C. Conty, B. Rasser, and H. N. Migeon
Design for an improved quadrupole-based SIMS spectrometer with hightransmission and a large acceptance area 835
B. F. Phillips
Exploiting the versatility of quadrupole SIMS instrumentation 839S. P. Thompson, D. F. Reich, and G. Peterson
Development of a hollow cathode glow discharge ion source for the CamecaIMS 3f secondary ion mass spectrometer 843
R. Deng and P. Williams
Ultra low dose static SIMS with TOF analysis and a pulsed fast source 847S. J. Mullock, D. F. Reich, and T. Dingle
A new time-of-flight secondary ion microscope 851B. Schueler, P. Sander, and D. A. Reed
Improved speed and quality of analysis in SIMS depth profiling using a dual,beam ion micro-probe
H. Frenzel
SIMS as an end-point detector in micro-machining with focused ion beams . 859M. J. Vasile and L. R. Harriott
Image current detection in quantitative microprobe Fourier transform ioncyclotron resonance spectrometry 863
J. T. Brenna and W. R. Creasy
xxvi Contents
Expert system development in quantitative SIMS analysis 867Y. Ling
Improvement of measurements at high mass resolving power in magneticsector SIMS instruments by means of an electrostatic peak switching unit... 871
/ . Van Vooren, R. Vlaeminck, J. Vandenbroeck, and R. Gijbels
Sampling a glow discharge atomization/ionization source with a doublequadrupole mass spectrometer 875
R. K. Marcus
A vacuum of 5 x 10~10 Torr in the Cameca IMS4F sample chamber 879H. N. Migeon, M. Schuhmacher, and B. Rasser
Compact Cs + ion microsource 883H. Liebl, B. Senftinger, P. Staib, and H. Weiss
Computer aided peak identification in high resolution mass spectrometry ofsolid materials 887
N. A. Thome and F. Degreve
SIMS analysis of insulating materials using EBIC 891Y. Ikebe, H. Iwamoto, H. Toita, and H. Tamura
Development of a scanning SCANIIR microsocope 895M. Inoue, S. Kunitomo, T. Tsutsui, S. Nishigaki, T. Noda, and J. Okano
Factor affecting trace determinations of hydrogen by secondary ion massspectrometry 899
L. A. Streit and C. Bowers
Development of new field limiting method for SIMS 903H. Tamura, Y. Ikebe, H. Toita, H. Hirose, and H. Shichi
Development of an instrument for semiconductor analysis using laser-induced resonant post-ionization of sputtered neutrals 907
P. De Bisschop, D. Huyskens, M. Meuris, W. Vandervorst,B. Rasser, and F. Costa de Beauregard
ToFSIMS-QuadSIMS. An assessment of their relative advantages forapplied surface analysis by static SIMS 911
D. Johnson, A. J. Paul, P. Humphrey, N. M. Reed, andJ. C. Vickerman
Contents xxvii
ION IMAGING
Quantitative digital imaging study of boron diffusion in CVD SiC films 917J. H. Gibson, S. K. Lau, and S. R. Bryan
Detectors and detector discriminations in ion microscopy 921D. S. Mantus, L. K. Turner, Y. -C. Ling, and G. H. Morrison
Ion-to-optical images registration: a tool for correcting distortions in ionmicroscopy images 925
J. C. Olivo, E. Kahn, S. Halpern, P. Fragu, and R. Di Paola
Concentration histogram images: a digital imaging method for analysis ofSIMS compositional maps 929
D. E. Newbury and D. S. Bright
Analyses of particles in beryllium by ion imaging 935C. W. Price and J. C. Norberg
Recent developments of the IMS 4F imaging capabilities 939M. Schuhmacher, H. N. Migeon, and B. Rasser
Molecular microanalysis by application of pattern recognition to SIMSimages 943
R. W. Linton, C. U. Ro, D. C. Wilson, J. L. Hunter, and S. F. Corcoran
Optimization of acquisition parameters for ion microscopy/digital imagingusing a CCD detector 947
J. L. Hunter, Jr., D. P. Griffis, and R. W. Linton
SIMS imaging applications and hydrogen detection limits on few micro-meters square patterns 951
M. Outrequin, J. Marien, P. Gelin, and M. Perdereau
List of contributors 955
Index of reviewers 961
Index of session chairpersons 963
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