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About Allwin21 Corporation
Allwin21 Corp. was formed in 2000 to provide Rapid Thermal
Process, Plasma Asher Stripper Descum, Plasma Etch/RIE/ICP,
Sputtering and Evaporator System, Metrology and Tester high-
tech equipment, services and technical support in Semiconductor
industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc.
Located in Santa Clara, the heart of Silicon Valley, Allwin21 has
been providing unique technical support, high quality equipment
and fast supplied spare parts worldwide. We have maintained a
global presence that has grown and expanded. into the major high-
tech manufacturing areas of the world. We pride ourselves on
developing lasting customer and client relationships.Allwin21 is
proud to announce it is certified as ISO 9001:2008 compliant
organizations.
Allwin21 Mission Statement
• To deliver unique, high value-added solutions to our customers, using Allwin21's proven products that are leveraged by our innovative technologies.
• We are dedicated to providing unique solutions that enable new processes, improve yield, increase uptime, reduce maintenance costs, and extend life of capital equipment.
Professionally provide advanced high-tech equipment suitable to customer preferences and needs
Company Distribution
Allwin21 CorpBeijing.
Allwin21 CorpUSA
Japan
Korea
Headquarter
Subcompany or office
Agents
Allwin21 CorpNanjing
Taiwan
Britain France Germany Israel
India Vietnam
Poland
Brazil Singapore
Innovative Technologies • Process development and enhancement
– Combined 30 years of process experience
• System control on board/component level– Superior customer support
• Advanced AW Software for each equipment– User-friendly with excellent customer reception– Enhanced automated system diagnostics for better
serviceability– Integrated process control system – Real time graphics display – Real time process data acquisition, display, and analysis – Programmed comprehensive calibration and diagnostic
functions – Better performance and maintenance than the original
systems
• Precise Temperature Control Technology– Much better uniformity– Much better repeatability
Main Products and Services
• Equipment
– Rapid Thermal Process– Plasma Asher Descum– Plasma Etch RIE ICP– Sputtering System– Metrology & E-Tester
• Services–Refurbishment–Upgrade–On site service
• Spare parts
Thin Film Deposition Technology Physical Vapor Deposition (PVD)-Film is formed by atoms directly transported from source to the substrate through gas phase
EvaporationThermal evaporationE-beam evaporation
SputteringDC Diode sputteringDC Magnetron sputteringRF Diode sputteringRF Magnetron sputteringReactive sputtering
Chemical Vapor Deposition (CVD)-Film is formed by chemical reaction on the surface of substrate
Low-Pressure CVD (LPCVD) Plasma-Enhanced CVD (PECVD) Atmosphere-Pressure CVD (APCVD) Metal-Organic CVD (MOCVD)
OxidationSpin CoatingPlatting
General Characteristics of Thin Film Deposition• Deposition Rate• Film Uniformity
Across wafer uniformity Run-to-run uniformity
• Materials that can be deposited Metal Dielectric Polymer
• Quality of Film –Physical and Chemical Properties Stress Adhesion Stoichiometry Film density, pinhole density Grain size, boundary property, and orientation Breakdown voltage Impurity level
•Deposition Directionality Directional: good for lift-off, trench filling Non-directional: good for step coverage
•Cost of ownership and operation
Comparison of Thin Film Deposition Technology
Sputtering Deposition
• Sputtering is a term used to
describe the mechanism in
which atoms are ejected
from the surface of a
material when that surface is
stuck by sufficiency
energetic particles.
• Alternative to evaporation.
• First discovered in 1852,
and developed as a thin film
deposition technique by
Langmuir in 1920.
Why purchase Allwin21 Sputtering Deposition Systems?
Description
Quality 20 years proven true “work horse” systems Made in U.S.A Thousands units in fabs/labs Better Performance Advanced AW Software with precise control technology
Cost Lowest ownership cost Different models and configurations for different applications and budgets
Delivery Industry-leading 8 to 12 weeks lead time
Service* Local engineers trained by U.S.A engineers Phone and email support by U.S.A engineers in local language U.S.A. engineers can provide on site support in 72 hours if necessary.
Relationship
We have been looking for Win-Win-Win relationship with our customers; We pride ourselves on developing lasting customer and client relationships.
* BE RESPONSIBLE BY OUR LOCAL REP.
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All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Allwin21 Sputter Deposition System Models AccuSputter AW 4450 Series
-Brand New Sputter deposition systems with load lock and all
different configuration.
Perkin-Elmer 4400 Series
-Fully refurbished and upgraded sputtering deposition systems
with load lock.
Perkin-Elmer 4400 : 1 to 4 round cathodes
Perkin-Elmer 4410 : 1 to 3 Delta cathodes
Perkin-Elmer 4450 : 1 to 3 Delta cathodes and Turbo pump
Perkin-Elmer 4480 : 1 to 3 Delta cathodes and Turbo Pump
and automatic wafer transfer
Perkin-Elmer 2400 Series
-Fully refurbished and upgraded sputtering deposition systems
without load lock.
BudgetThroughputSputter RateMaterial AmountUniformityQuality of Film
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition System Structure
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Sputter Deposition Load Lock and Chamber and Hoist
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition Load Lock and Chamber
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition AW Controller
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition AW Controller-2
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition System LayoutUtilities:
· Rear-mounted electrical, water, gas and LN2 inlet panel
· Power distribution box· Water flow switch panel
and manifold· 10kW DC power supply:
208VAC, 60Hz, 3phases, 60A, 4 wires
· Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires
· Cooling Water: 1.8gpm3· Process N2: 60-70 psi· Process Argon: 5-10 psi· CDA: 40-60 psi
Dimensions and Weight:
Width: 65.000 in (165.1 cm)
Depth: 46.000 in (116.8 cm)
Height: 68.000 in (172.7 cm)
Weight: 2,288 lb (1,038 kg)
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter Deposition System Key Features Advanced AccuSputter ® AW4450 Controller with GUI
mounted in the main frame; Manual, Semi and Automatic one button operation; Customer programming of recipe for process
parameters. GEM/SEC II functions (Optional) 24V DC control components DC Gear Motors for table rotate and carriage moving; Advanced vacuum gauges and control system; MFC gas control system; Advanced RF automatically matching network; DC and RF power are mounted in the main frame; Fast Cycle Load Lock Operation ; High rate DeltaTM DC magnetron sputtering; High throughput operation: Automated load lock and
controller sequences provide for efficient pump down
and pallet transfer to process chamber High uniformity: ±7% deposition uniformity
guaranteed with water-cooled rotating annular
substrate table; ±5% achievable.
Ultra-clean vacuum: Cryopumped and
Meissner-trapped process chamber ensures
contamination-free conditions especially
important for critical processes such as the
deposition of aluminum and platinum; Easy maintenance: Removable deposition
shields permit easy system cleaning.
Automatic cryopump regeneration minimizes
downtime and inconvenience; Specialized pallets for ease of substrate
leading/unloading; "Drop in" target for quick target changes, no
screw to both with; "Snap-out" deposition shields for quick, easy
maintenance; Fail-safe system protection
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter System Configuration-Chamber28" diameter X 12" high stainless steel cylinder with 6" CF flange viewport and
load lock port28" diameter stainless steel top plate with 3 delta cathode ports. Adaptor for 8-inch
or 6-inch target is optional.28" diameter stainless steel base plate
11/2" air-operated roughing isolation valve
Air-operated gas inlet valveAir-operated vent valve
11/2" blanked-off leak check port
Removable deposition shields23" diameter, 3-position water-cooled annular
substrate table with variable-speed motorized table driveFull circle shutter with vane shutterChain drive pallet carrier transportHeavy duty electric hoist
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter System Configuration-Load Lock
30" x 28" x 8" stainless steel load
lock chamber with aluminum
cover
2" air-operated roughing isolation
valve
Air-operated vent valve
23" diameter molybdenum
annular substrate pallet
Pallet carrier and chain drive
transport
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
AW Sputter System Configuration-VacuumRoughing36.7 cfm mechanical pump for process chamber and load lock roughing2" diameter roughing lines with electro-pneumatic valveSurface-area Versa-trapTM in roughing lineHigh vacuum pumping2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit.71/2" O.D. (6" ASA) aluminum air-operated gate valveAir-operated venetian blind throttling valveResidual gas pumpingFull flood Meissner trap with 30,000 l/s pumping speed for water vaporInsylated LN2 linesLN2 sensor, solenoid and relief valveControlVacuum gauging package including basic digital vacuum gauge control, ionization tube and two thermal tubesAutomatic pump-down controllerAutomatic lock controllerOptionsLoad lock Hi-VAC pump-Turbo Pump
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Typical Deposition MaterialsAl+W Cr/SiO2 SiC Ti+AuAl+Ti/W+Ag InSnO SiO2 Ti+Au+Ni
Al2O3 Mo SiO2+O2 Ti/WAg MoSi2 Si+N2(Si3N4) Ti/W+Au
Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta
C Mo5Si3 Ta Ti/W+Al/Si
Cr Ni TaC Ti/W+Ni/Cr+Au
Cr/Co Ni/Cr Ta+Au Ti/W+PtCr/Au Ni+Ni/Cr TaSi2 WCr+Cu Ni/Fe Ta+SiO2
Cr/Si Ni/Fe+Cu+SiO2 TiO2 Zn
Cr/SiO Pt TiO2+Cr ZnO2
Zr
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Batch Throughput and Substrate
Customized
Target ShapeTarget SizeThroughputUniformityQuality of Film
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Typical ThroughputPERFORMANCE FOR TYPICAL METALLIZATION PROCESS-100mm WAFERS
Standard Delta System High Throughput Delta Systems
Pallet capacity 14 22Uniformity +/-7%(63/4") band +/-5%(73/4" band)
+/-7%(8" band)Typical Target Life 3220 wafers 4070 wafersTypical Deposition Rate 200 Angstroms/kw-min 170 Angstroms/kw-minTypical Deposition time 5 minutes 5.9 minutes*Runs per hour 4.0 3.8Throughput 56 wafers/hour 83 wafers/hour* Assumes 10 minute pumping, wafer exchange and venting cycle, some processes require pre-heating, extending the loading cycle by as much as 5 minutes.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Target Cathodes-Amount
Up to 4 Up to 3
Material AmountUniformitySputter RateThroughputQuality of FilmBudget
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Cathode Type for Different Sputter TypesDC RF Pulse DC
Diode Metal Metal /Dielectric
Metal /Dielectric
Magnetron Metal Metal /Dielectric
Metal /Dielectric
MaterialUniformitySputter RateThroughputQuality of FilmBudget
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Can be for 8 inch or 6 inch circular target with special adaptor.
8 inch6 inchCustomized ,such as 2 inch, 3 inch, 4 inch, 5 inch
Cathodes for Different Target Shape and Size
Target CostUniformitySputter RateThroughputQuality of FilmBudget
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Typical Deposition Materials and Sputter RatesA
ngstrom
s/min
/kw
Material Delta(1)
RF DiodeDelta(1)
RF MagnetronDelta
DC Magnetron
Ag 480Al 200Al2O3
(3) 40Au 400Cr 180CrNx 160CrSi2 125Cu 80 320Mo 220MoSi2 150Ni(2)
Nichrome 125Pd 390Permalloy(2)
Pt 280Quartz(3) 25 50Si(3) 90Si3N4
(3) 30Ta 150TaNx 140Ti 140TiNx 125Ti/W(10%) 150W 150Wnx 125
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Typical Deposition Materials and Sputter Rate
The seller is neither responsible for any customers' applications and processes nor for any production loss due to machine failure, damage, or shut-down by any causes.
Rates shown above are given in angstroms/min/kw, and are typical only. Actual
rates for any given system will depend upon process and system parameters.
Rates are approximately linear with applied power except where otherwise
indicated. Some materials, due to their nature, are limited to power levels
substantially less than the maximum power ratings for each cathode type.
1 Insufficient data available for most materials with RF Delta operation - DC
magnetron recommended for metals.
2 Ferromagnetic materials - magnetron mode is possible with thin targets only but
not recommended.
3 Dielectric materials - require the use of RF power. Rates are non-linear.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Sputter Uniformity and Quality of Film
Wafer Size Loading Capacity
Deposition UniformityStd Delta High Perf. Delta
3inch 30 +/-7% +/-5%100mm 22 N/A +/-5%
14 +/-7% +/-4%13 +/-5% +/-4%
125mm 10 +/-7% +/-5%9 +/-4% +/-4%
150mm 8 +/-12% +/-5%7 +/-7% +/-4%
8inch 5 +/-14% +/-7%
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
RF Etch and RF Bias FunctionEF Etching: Essentially the reverse process of RF diode sputter
deposition, in which the substrate table becomes the cathode (negative
pole) and the target assembly becomes the anode (positive pole). Under
these circumstances, surface material from the substrates is ejected.
Surface impurities are ejected along with substrates material, making
this process useful for pre-cleaning substrate prior to sputter deposition.
In order to prevent ejected material from contaminating the target, s
shutter is positioned between target and substrate.
Bias sputtering: Combines the DC or RF sputtering and the RF
etching operations. While DC or RF power is applied to the target, a
small amount of RF is also applied to the substrate table. As a result,
the substrate and target are both bombarded by ions ( the substrate to a
lesser extent than the target ). In many applications this process yields
superior quality films than can be attained using DC or RF sputtering
with grounded substrates. Bias sputtering influences the crystal
structure, and tends to re-sputter trapped argon from the growing film
during deposition and rearrange individual atoms of the sputtered
material; this improves stoichiometry and step coverage. Bias
sputtering can be used to adjust film resistivity and film stress to
desired levels.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
DC Power and RF Power
DC Sputter
RF Sputter RF Etch RF Bias
Round Cathodes
1-5KW 1-2KW 0.3-1.2KW 0.3-1.2KW
Delta Cathodes
1-10KW 1-3KW 0.3-1.2KW 0.3-1.2KWBudgetMaterialSputter RateThroughputQuality of Film
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Suitable
is th
e best
Process Gases
100 SCCM Ar
100 SCCM N2100 SCCM O2Customized
OPTIONALAll specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Suitable is
the best
Typical Process Data-1High quality metal films can be routinely achieved:Material:Al-1%SiPower:9kwTable rotation:10 rpmArgon pressure:8 mTorrFilm thickness:1.04 micronsDeposition time:5.8 minutesStep height: 1.10 micronsStep slope: 80o
Step coverage: 62% horizontal-to-verticalSpecularity: 65-75%Resistivity: 2.85μΩ-cmGrain size:2 microns
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Typical Process Data-2Delta Cathode SystemsMaterial Al/1%Si Al/1%Si/2%Cu Al/4%CuDC Power 10 kw 10 kw 10 kwBase Pressure 5X10-7 Torr 5X10-7 Torr 5X10-7 TorrPumpdown Time 3.5 min. 3.5 min. 3.5 minArgon Pressure 8X10-3 Torr 8X10-3 Torr 8X10-3 TorrTable Rotation 2-5 rpm 2-5 rpm 2-5 rpmDeposition Rate 2000 Å /min 2000 Å /min 2000 Å /minFilm Thickness 1.0 microns 1.0 microns 1.0 micronsStep Hight 1.0 microns 1.0 microns 1.0 micronsStep Slop/Coverage 70o/70% 70o/70% 70o/70%
80o/60% 80o/60% 80o/60%90o/50% 90o/50% 90o/50%
Specularity 70-75% 80-85% 90-95%Resistivity 2.85-2.90μΩ-cm 2.95-3.00μΩ-cm 2.95-3.00μΩ-cmGrain Size 1-2μm 0.3-0.5μm 0.3-0.5μFilm Hardness(Annealed)
85kg/mm2 100kg/mm2 120kg/mm2
CV Shift 0.25V 0.15V 0.15V*Uniformity +/-7% +/-7% +/-7%* Typical results with Standard Delta Cathodes. Higher uniformity and throughput can be achieved with high performance Delta Cathodes and high throughput option. Throughput is process dependent and may vary depending on etch and pre-heat cycles.
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
Other Optional Accessories and functions
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
RF BiasCo-SputterLoad Lock Radiant Heat (Up to 200C)In Process Radiant Heat (Up to 350C)Turbo Pump for Load Lock
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QuestionnaireQuestions Feedback
Budget
Sputter Material, Sputter Rate, Sputter Uniformity and Quality of Film Spec.
Throughput
Wafer Size, Material, Shape
Target Cathode Amount, Type, Shape, Size
RF Etch Function
DC Power and RF Power capability
Process Gas and MFC range
Turbo Pump
Mechanical Pump
Typical Process Recipe
Special Requirements
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Contact UsAddress:3521 Leonard Court ,Santa Clara,CA95054,U.S.A.
Telephone:1-408-988-5188
Fax:1-408-904-7168
E-mail: sales@allwin21.com
Website: www.allwin21.com
All specification and information here are subject to change without notice and can not be used for purchase and facility plan.
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