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Tucana 94GHz MMIC
No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use, nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.
product datasheetarralis.com
Features • Either x4 or x8 Operation
• 86-92 GHz Output (x4 Mode)
• 86.6-90.6 GHz Output (x8
Mode)
• >8dB Return Loss
• Up to 8dBm Output Power
Applications
• Narrow Bandwidth Millimetre-
wave Imaging
• High Resolution Radar
• Sensing
• P2P Communications;
short haul/high capacity/low
interference links
TU-W1340309 GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
Overview
TU-W1340309 is a frequency multiplier with integrated amplifier and filter, designed to
drive the TU-W1340307/8 mixers so that frequencies in the 92-96 GHz range can be
easily realized using a 5.4 GHz baseband signal. The TU-W1340309 has a wideband
input impedance match which means that it can operate in both x4 or x8 modes,
with inputs of ~22 or ~11 GHz respectively. The circuit is designed on a 50um GaAs
PHEMT substrate.
All bond pads and the die backside are gold plated and compatible with conventional
die attach methods, as well as thermo-compression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit applications. All data shown herein is
provisional and is measured with the chip in a 50 Ohm environment and contacted
with RF probes.
TU-W1340309 product datasheet www.arralis.com
NotesThe tests indicated have all been performed with 100pF de-coupling capacitors on all bias pads. All tests are carried out at 25°C.
Drain Bias on 1st Stage =0.7V, Gate Bias on 1st Stage =-1.1V; Drain Bias on other stages =2V; Gate Bias on other stages = 0V
NotesThe tests indicated have all been performed with 100pF de-coupling capacitors on all bias pads. All tests are carried out at 25°C.
Gate Bias on 1st Stage =-0.6V; Gate Bias on other stages = 0V; Drain Bias on all stages =4V
Parameter Min. Typ. Max. Units
Specification Overview - x4 Mode
Input Frequency 21.5 23 GHz
Output Frequency 86 92 GHz
Gain -7 dB
Multiplication Factor 4
Output Power 0 8 dBm
5th Harmonic Attenuation 27 dB
Current 210 mA
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
Parameter Rating
Input Frequency 10.825 11.325 GHz
Output Frequency 86.6 90.6 GHz
Gain -10 dB
Multiplication Factor 8
Output Power -2 4 dBm
7th Harmonic Attenuation 18 dB
9th Harmonic Attenuation 28 dB
Current 210 mA
Specification Overview - x8 Mode
TU-W1340309 product datasheet www.arralis.com
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features proprietary protection circuitry, damage may occur on devices subjected to ESD. Proper ESD precautions should be taken to avoid performance degradation or loss of functionality.
Parameter Rating
Gate Voltage -5V to 0.2V dc
Drain Voltage 5V
Drain Current 600mA
RF Input Power 25dBm
Storage Temperature −65°C to +150°C
Channel Temperature +150°C
Operating Temperature −40°C to +85°C
Absolute Maximum Ratings
Measured Performance Datax4 Operation
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
TU-W1340309 product datasheet www.arralis.com
Figure 1TU-W1340309 (x4 Mode) Output Power
Figure 2TU-W1340309 (x4 Mode) Conversion Gain
Output Frequency (GHz)
Pout
(dB
m)
Gai
n (d
B)
Output Frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
84 85 86 87 88 89 90 91 92 93 94
11dBm IP Power
13dBm IP Power
16dBm IP Power
(VD1=0.7V, VG1=-1.1V, VDx=2V, VGx=0V, IDD=210mA)
-30
-25
-20
-15
-10
-5
0
84 85 86 87 88 89 90 91 92 93 94
11dBm IP Power
13dBm IP Power
16dBm IP Power
(VD1=0.7V, VG1=-1.1V, VDx=2V, VGx=0V, IDD=210mA)
Measured Performance Datax4 Operation
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
TU-W1340309 product datasheet www.arralis.com
Figure 3TU-W1340309 (x4 Mode) 5th Harmonic Attn. from 4th
Output Frequency (GHz)
Atte
nuat
ion
(dB
)
-50
-45
-40
-35
-30
-25
-20
108.5 109 109.5 110 110.5 111 111.5 112 112.5 113
11dBm IP Power
12dBm IP Power
13dBm IP Power
(VD1=0.7V, VG1=-1.1V, VDx=2V, VGx=0V, IDD=210mA)
Measured Performance Datax8 Operation
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
TU-W1340309 product datasheet www.arralis.com
Figure 4TU-W1340309 (x8 Mode) Output Power
Figure 5TU-W134030 (x8 Mode) Conversion Gain
Output Frequency (GHz)
Pout
(dB
m)
Gai
n (d
B)
Output Frequency (GHz)
-12
-10
-8
-6
-4
-2
0
2
4
6
86.6 87.1 87.6 88.1 88.6 89.1 89.6 90.1 90.6
11dBm IP Power
12dBm IP Power
14dBm IP Power
(VG1=-0.6V, VDD=4V, VGx=0V, IDD=210mA)
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
86.6 87.1 87.6 88.1 88.6 89.1 89.6 90.1 90.6
11dBm IP Power
12dBm IP Power
14dBm IP Power
(VG1=-0.6V, VDD=4V, VGx=0V, IDD=210mA)
Measured Performance Datax8 Operation
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
TU-W1340309 product datasheet www.arralis.com
Figure 6TU-W1340309 (x8 Mode) 7th Harmonic Attn. from 8th
Figure 7TU-W1340309 (x8 Mode) 9th Harmonic Attn. from 8th
Output Frequency (GHz)
Atte
nuat
ion
(dB
)A
ttenu
atio
n (d
B)
Output Frequency (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
75.8 76.3 76.8 77.3 77.8 78.3 78.8
9dBm IP Power
12dBm IP Power
14dBm IP Power
(VG1=-0.6V, VDD=4V, VGx=0V, IDD=210mA)
-40
-38
-36
-34
-32
-30
-28
-26
-24
-22
-20
97.5 98 98.5 99 99.5 100 100.5 101
Atte
nuat
ion
(dB
)
9dBm IP Power
12dBm IP Power
17dBm IP Power
(VG1=-0.6V, VDD=4V, VGx=0V, IDD=210mA)
TU-W1340309 product datasheet www.arralis.com
Outline Drawing
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
80.0
4232.7 2824.7
90.0
4357.5
5165.0
1629.2
51.
5 90.
0
50.
0
50.
0
60.0 80.0
396.2
46.5
60.
0 8
29.0
739
.0
90.
0
80.
0
80.0
80.0
353.0
51.
5
87.0 4
47.0
60.0
90.
0
50.
0 60.
0
2697.0 1549.0
2956.9
80.0
80.0
50.
0 9
0.0
80.0 80.0
289
0.0
TU-W1340309 product datasheet www.arralis.com
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
Name Description
RFIN Input RF pad. This pad is ac coupled.
RFOUT Output RF pad. This pad is ac coupled.
VDx Drain bias pad for stage x
VGx Gate bias pad for stage x.
BOTTOM The die backside must be connected to RF/dc ground.
Pad Descriptions
Notes
1. All dimensions are in um.
2. Typical dc bond pads are 80um square.
3. RF bond pads are 60um square.
4. All pads have gold metalisation.
5. Gold backside metalisation.
6. Backside metal is ground.
7. Connections are not required for unlabelled bond pads.
8. Die thickness is 50um
Die Packing Information
All die are delivered using gel-paks unless otherwise requested.
Die should be mounted on conductive material such as gold-plated metal to provide a
good ground and suitable heat sink, if necessary.
1. Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/
Sn occurs at approximately 280oC so the die (plus mount and preform) is initially
heated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.
2. Pure, dry Nitrogen should be used as the heat source
3. If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.
4. Supply lines should be decoupled with 100pF capacitors. Larger planar capacitors
could be used if available.
5. Aluminium wire must not be used.
©2016 Arralis Ltd. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
©2017 Arralis Ltd. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
General Notes on Assembly
TU-W1340309 product datasheet www.arralis.com
GaAs PHEMT MMIC x4 or x8 Multiplier, 86 - 92GHz
(Not actual die – these rules are applied to all MMICs unless otherwise stated)
Arralis, Tierney Building UL, Castletroy, Limerick V94NYD3, Ireland (IRL). Tel: +353 61 748 264
Arralis, ECIT, Northern Ireland Science Park, Queen’s Road, Queen’s Island, Belfast BT3 9DT, United Kingdom (UK). Tel: +44 28 9045 4021
Email: info@arralis.com Web: www.arralis.com
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