12
IRFZ34NSPbF HEXFET ® Power MOSFET PD - 95571 l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL) is available for low- profile applications. Description V DSS = 55V R DS(on) = 0.040I D = 29A 2 D Pak TO-262 S D G 07/19/04 Thermal Resistance Parameter Typ. Max. Units R θJC Junction-to-Case 2.2 R θJA Junction-to-Ambient (PCB mount) ** 40 °C/W Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 29 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 20 A I DM Pulsed Drain Current 100 P D @T A = 25°C Power Dissipation 3.8 W P D @T C = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 130 mJ I AR Avalanche Current 16 A E AR Repetitive Avalanche Energy 5.6 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T J Operating Junction and -55 to + 175 T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C IRFZ34NLPbF www.irf.com 1

IRFZ34NSPbF IRFZ34NLPbF - Mouser Electronics

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1

10

100

1000

0.1 1 10 100

I ,

Dra

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o-S

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nt (

A)

D

V , Drain-to-Source Voltage (V)DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

20µs PULSE WIDTH T = 25°CC A

4.5V

1

10

100

1000

0.1 1 10 100

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

D

V , Drain-to-Source Voltage (V)DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

A

4.5V

20µs PULSE WIDTH T = 175°CC

1

10

100

4 5 6 7 8 9 10

T = 25°CJ

GSV , Gate-to-Source Voltage (V)

DI ,

Dra

in-t

o-S

our

ce C

urre

nt (

A)

A

V = 25V 20µs PULSE WIDTH

T = 175°CJ

DS

0.0

0.4

0.8

1.2

1.6

2.0

2.4

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

JT , Junction Temperature (°C)

R

, D

rain

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On

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DS

(on)

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mal

ized

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V = 10VGSA

I = 26AD

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800

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DSV , Drain-to-Source Voltage (V)

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V = 0V, f = 1MHzC = C + C , C SHORTEDC = CC = C + C

GSiss gs gd dsrss gdoss ds gdCiss

Coss

Crss

0

4

8

12

16

20

0 10 20 30 40

Q , Total Gate Charge (nC)G

V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

GS

A

FOR TEST CIRCUIT SEE FIGURE 13

V = 44VV = 28V

DS

DS

I = 16AD

1

10

100

1000

0.4 0.8 1.2 1.6 2.0

T = 25°CJ

V = 0VGS

V , Source-to-Drain Voltage (V)

I

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Dra

in C

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nt (

A)

SD

SD

A

T = 175°CJ

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)DS

I ,

Dra

in C

urre

nt (

A)

OPERATION IN THIS AREA LIMITED BY R

D

DS(on)

10µs

100µs

1ms

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T , Case Temperature ( C)

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Dra

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A)

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D

0.01

0.1

1

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Notes:1. Duty factor D =t / t2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

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1

2

t , Rectangular Pulse Duration (sec)

The

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0.05

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0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

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VDS

IAS

VDD

V(BR)DSS

D.U.T.VDS

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3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

QG

QGS QGD

VG

Charge

2

0

50

100

150

200

250

25 50 75 100 125 150 175

J

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se A

vala

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(mJ)

AS

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Starting T , Junction Temperature (°C)

V = 25V

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P.W.Period

di/dt

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Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

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Dimensions are shown in millimeters (inches)

Note: "P" in as sembly linepos ition indicates "Lead-Free"

F 530S

T HIS IS AN IRF530S WITHLOT CODE 8024ASS EMBLED ON WW 02, 2000IN THE ASSE MBLY L INE "L"

ASSE MBLYLOT CODE

INTE RNATIONALRECT IFIE R

LOGO

PART NUMBER

DAT E CODEYEAR 0 = 2000WEEK 02LINE L

F530S

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P = DES IGNAT ES LEAD-FREEPRODUCT (OPT IONAL)

RECT IF IERINT ERNAT IONAL

LOGO

LOT CODEASS EMBLY

YEAR 0 = 2000

DATE CODE

PART NUMBER

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TO-262 Part Marking Information

TO-262 Package OutlineDimensions are shown in millimeters (inches)

AS SEMBLYLOT CODE

RECT IF IERINTERNATIONAL

AS SEMBLED ON WW 19, 1997

Note: "P" in assembly lineposition indicates "Lead-Free"

IN THE ASS EMBLY LINE "C" LOGO

THIS IS AN IRL3103LLOT CODE 1789

EXAMPLE:

LINE C

DATE CODE

WEEK 19YEAR 7 = 1997

PART NUMBER

PART NUMBER

LOGO

LOT CODEASS EMBLY

INTERNAT IONALRECTIFIER

PRODUCT (OPTIONAL)P = DESIGNATES LEAD-FREE

A = AS SEMBLY S ITE CODEWEEK 19YEAR 7 = 1997

DATE CODE

OR

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Dimensions are shown in millimeters (inches)

3

4

4

TRR

FEED DIRECTION

1.85 (.073)1.65 (.065)

1.60 (.063)1.50 (.059)

4.10 (.161)3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)10.70 (.421)

16.10 (.634)15.90 (.626)

1.75 (.069)1.25 (.049)

11.60 (.457)11.40 (.449)

15.42 (.609)15.22 (.601)

4.72 (.136)4.52 (.178)

24.30 (.957)23.90 (.941)

0.368 (.0145)0.342 (.0135)

1.60 (.063)1.50 (.059)

13.50 (.532)12.80 (.504)

330.00(14.173) MAX.

27.40 (1.079)23.90 (.941)

60.00 (2.362) MIN.

30.40 (1.197) MAX.

26.40 (1.039)24.40 (.961)

NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/04

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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